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1 Jun 1977

Volume 30, Issue 11, pp. 555-613


Pinhole imaging of laser‐produced thermonuclear alpha particles

V. W. Slivinsky, K. M. Brooks, H. G. Ahlstrom, E. K. Storm, H. N. Kornblum, and G. R. Leipelt

Appl. Phys. Lett. 30, 555 (1977); http://dx.doi.org/10.1063/1.89257 (2 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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We have built a pinhole camera for imaging the deuterium‐tritium (DT) burn region of laser‐driven implosions by spatially resolving the α particles. Kodak Pathe LR‐115 cellulose nitrate film was used as a detector with an 8‐mg/cm2 Ta filter. Initial results show that the α particles are produced in a region which is much smaller than the initial glass microsphere.
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52.70.Nc Particle measurements

Ion‐implantation‐induced lattice defects in PbTe

L. Palmetshofer, H. Heinrich, O. Benka, and W. Rescheneder

Appl. Phys. Lett. 30, 557 (1977); http://dx.doi.org/10.1063/1.89258 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Hall‐effect and conductivity measurements as well as channeling‐effect measurements were used to study the lattice defects induced by ion implantation in thin films of PbTe. The implantation was performed with 300‐keV Pb, Te, and Xe ions at room temperature. For the as‐implanted samples the Hall‐effect measurements gave a constant value for the carrier concentration, independent of the implantation dose. The backscattering measurements showed a continuous increase in the lattice disorder with increasing dose. A model, based on the assumption of an acceptor level above the conduction‐band minimum, is proposed to explain this behavior.
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61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
71.55.Ht Other nonmetals

Depth profile detection limit of 3×1015 atom cm−3 for As in Si using Cs+ bombardment negative secondary ion mass spectrometry

Peter Williams and Charles A. Evans

Appl. Phys. Lett. 30, 559 (1977); http://dx.doi.org/10.1063/1.89259 (3 pages) | Cited 26 times

Online Publication Date: 26 August 2008

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Depth profiles of As‐implanted silicon samples have been determined by secondary ion mass spectrometry in order to establish a practical detection limit for As in Si. By monitoring the AsSi− species, produced in high yield by Cs+ ion bombardment, it is shown that As is detectable down to a background count limit of ∼3×1015 atom cm−3 (50 ppb) during a depth profile of a 250‐μm square area.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation

Quantitative analysis of hydrogen in glow discharge amorphous silicon

M. H. Brodsky, M. A. Frisch, J. F. Ziegler, and W. A. Lanford

Appl. Phys. Lett. 30, 561 (1977); http://dx.doi.org/10.1063/1.89260 (3 pages) | Cited 165 times

Online Publication Date: 26 August 2008

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We report measurements of the hydrogen concentrations and densities of amorphous silicon films prepared from glow discharge plasmas of silane. Quantitative results are obtained from the resonant nuclear reaction 15N+1H→12C+4He+γ by counting the emitted γ rays. Mass spectrographic analysis of the gases evolved upon heating are also used to estimate the relative hydrogen concentrations for different preparation conditions. Comparisons are given to previously reported infrared absorption results and to electron microprobe estimates.
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61.43.Fs Glasses
61.43.-j Disordered solids
82.80.-d Chemical analysis and related physical methods of analysis
68.60.-p Physical properties of thin films, nonelectronic
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Creep curve of silicon wafers

S. Isomae, M. Nanba, Y. Tamaki, and M. Maki

Appl. Phys. Lett. 30, 564 (1977); http://dx.doi.org/10.1063/1.89261 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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A new method of performing a creep test on silicon single crystals is described. The experiment utilizes silicon wafers. The stress applied to the wafers is provided by a Si3N4 film deposited by chemical vapor deposition on the front side of the wafer. The samples, i.e., silicon wafers with superposed Si3N4 films, are annealed in a quartz tube at 1000–1100 °C. The creep curves obtained are classified into two types according to stress. One type is related to plastic deformation of the wafer; the other is an elastic deformation. These results are available for the use of Si3N4 film in semiconductor technology.
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62.20.Hg Creep
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
77.55.-g Dielectric thin films
46.35.+z Viscoelasticity, plasticity, viscoplasticity

Photochemical diodes

A. J. Nozik

Appl. Phys. Lett. 30, 567 (1977); http://dx.doi.org/10.1063/1.89262 (3 pages) | Cited 74 times

Online Publication Date: 26 August 2008

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A simple new device configuration for the conversion of optical energy into chemical energy is described. The devices, designated ’’photochemical diodes’’, consist of small sandwichlike semiconductor structures. When immersed in an appropriate electrolyte and exposed to light, such devices cause redox reactions to occur, such as the decomposition of water, and the oxidation of sulfide ions to form sulfur. Certain configurations result in up‐conversion of the incident photon energy and appear to represent an inorganic analog of photosynthesis.
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82.47.-a Applied electrochemistry
82.50.-m Photochemistry
82.45.-h Electrochemistry and electrophoresis
73.40.Mr Semiconductor-electrolyte contacts

Elimination of Li2O out‐diffusion waveguide in LiNbO3 and LiTaO3

Bor‐Uei Chen and Antonio C. Pastor

Appl. Phys. Lett. 30, 570 (1977); http://dx.doi.org/10.1063/1.89263 (2 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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A novel technique was developed to eliminate the Li2O out‐diffusion waveguide in LiNbO3 and LiTaO3 incurred during the process of Ti in‐diffusion. The out‐diffusion waveguide can be suppressed by annealing the crystals in LiNbO3 powder at 900 °C in a flowing oxygen environment for 1 h or longer.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
81.40.Tv Optical and dielectric properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Preferential doping of rhodamine 6G in a polyurethane optical solid circuit

A. Matsuda and S. Iizima

Appl. Phys. Lett. 30, 571 (1977); http://dx.doi.org/10.1063/1.89239 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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Introduction of a dye doped region into a passive waveguide area has been established by thermal doping of organic dye in a polymer optical solid‐state circuit. Using periodical corrugations with a period of 2050 Å formed on a glass substrate, a N2 laser pumped dye laser—waveguide system has been constructed.
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42.79.Gn Optical waveguides and couplers
81.40.Tv Optical and dielectric properties related to treatment conditions
42.60.By Design of specific laser systems

The low‐lying electronic states of Ar2F

Willard R. Wadt and P. Jeffrey Hay

Appl. Phys. Lett. 30, 573 (1977); http://dx.doi.org/10.1063/1.89240 (3 pages) | Cited 22 times

Online Publication Date: 26 August 2008

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Ab initio POL‐CI calculations are reported on the six lowest states of the Ar2F molecule for isosceles triangle (C2v) and linear Ar‐Ar‐F geometries. In the triangular configuration, the lowest Ar2+F− ionic state (2 2B2) is bound by 5.0 eV relative to Ar2+ (2Σ+u)+F− and by 0.6 eV relative to Ar+F− (2 2Σ+)+Ar. Emissions from this state to the repulsive states (1 2A1 and 1 2B2) dissociating to Ar+Ar+F are predicted at 268 and 274 nm with a combined lifetime of 128 nsec.
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31.15.A- Ab initio calculations
31.50.Df Potential energy surfaces for excited electronic states
33.20.Lg Ultraviolet spectra

Recombination lasing in a magnetoplasmadynamic arcjet

E. M. Campbell, R. G. Jahn, W. F. von Jaskowsky, and K. E. Clark

Appl. Phys. Lett. 30, 575 (1977); http://dx.doi.org/10.1063/1.89241 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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The plasmadynamic recombination laser concept is verified experimentally in a high‐power quasisteady MPD arcjet operating at 4 kA and 12 g/sec of argon. Measurements of the spatial variation of electron temperature electron density, and population densities in the arc exhaust flow confirm that inverted populations of the 4p to 4s ArII transitions are established by collisional‐radiative recombination of the ArIII ion. Using an optical cavity aligned transversely to the flow, recombination lasing of four such transitions, 5145, 4880, 4764, and 4727 Å, is observed spectrophotographically and photoelectrically over the entire 1‐msec discharge.
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42.60.By Design of specific laser systems
52.30.-q Plasma dynamics and flow
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.75.Di Ion and plasma propulsion

A new optoacoustic cell with improved performance

C. K. N. Patel and R. J. Kerl

Appl. Phys. Lett. 30, 578 (1977); http://dx.doi.org/10.1063/1.89242 (2 pages) | Cited 43 times

Online Publication Date: 26 August 2008

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We report a novel optoacoustic (OA) cell construction which has improved small absorption measurement capability from 10−9 cm−1 to 10−10 cm−1. The new OA cell is ideally suitable for use with planar output lasers, e.g., diode lasers. Now optoacoustic spectroscopy can be extended to include the effects of low temperatures, electric fields, and magnetic field effects.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
33.20.Ea Infrared spectra
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Optically pumped cell for novel visible decay of inhomogeneous magnetic field or of rf frequency spectrum

A. C. Tam and W. Happer

Appl. Phys. Lett. 30, 580 (1977); http://dx.doi.org/10.1063/1.89243 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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We have constructed a simple laser‐pumped device for a visible and real‐time display of an inhomogeneous magnetic field in three dimensions. Photographic records of such displays in the form of constant‐field contours spaced 5 mG apart are presented. Our device is capable of high spatial resolution, and we have observed contour lines as sharp as 0.02 cm full width. Such real‐time high‐resolution contours cannot be obtained by conventional point‐by‐point mapping. Our device can also be used as an unconventional rf frequency spectrum analyzer.
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07.55.-w Magnetic instruments and components
32.80.Xx Level crossing and optical pumping
42.62.-b Laser applications
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.

Tunable uv generation in KB5O8⋅4H2O to 1966 Å

K. Kato

Appl. Phys. Lett. 30, 583 (1977); http://dx.doi.org/10.1063/1.89244 (2 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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Efficient generation of tunable uv radiation to 1966 Å has been achieved by type‐1 frequency mixing of the outputs of the fourth harmonic of a Nd : YAG laser and a near‐infrared dye laser pumped by the second harmonic of the same Nd : YAG laser. A peak power as high as 40 kW with an average power of 2 mW was obtained at 1966 Å.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.62.-b Laser applications
42.72.-g Optical sources and standards
28.60.+s Isotope separation and enrichment

Semiconductor lasers with integrated interferometric reflectors

D. R. Scifres, W. Streifer, and R. D. Burnham

Appl. Phys. Lett. 30, 585 (1977); http://dx.doi.org/10.1063/1.89245 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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A new integrated interferometric reflector (IIR) is demonstrated in an optically pumped GaAs waveguide laser. It is shown that the laser can be wavelength tuned over 30 Å by very small changes in the refractive index of one IIR branch.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Hp Optical processors, correlators, and modulators

Backside‐illuminated InAs1−xSbx‐InAs narrow‐band photodetectors

D. T. Cheung, A. M. Andrews, E. R. Gertner, G. M. Williams, J. E. Clarke, J. G. Pasko, and J. T. Longo

Appl. Phys. Lett. 30, 587 (1977); http://dx.doi.org/10.1063/1.89246 (3 pages) | Cited 25 times

Online Publication Date: 26 August 2008

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High‐performance backside‐illuminated photodiodes have been fabricated for the first time from InAs1−xSbx‐InAs heterostructures prepared by liquid‐phase‐epitaxy technique. The peak wavelength can be tuned compositionally from 3.1 to over 7.0 μm at 77 K. The half‐width of the spectral responses as narrow as 1760 Å (at 4.0 μm) have been achieved. Internal quantum efficiencies of 90% and zero‐bias‐resistance–area products of 2×107 Ω cm2 have been obtained at 77 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology

Leaky‐mode buried‐heterostructure AlGaAs injection lasers

Takashi Kajimura, Kazutoshi Saito, Noriyuki Shige, and Ryoichi Ito

Appl. Phys. Lett. 30, 590 (1977); http://dx.doi.org/10.1063/1.89247 (2 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Leaky‐mode buried‐heterostructure injection lasers are fabricated and operated successfully under pulse bias at room temperature. The lasers consist of a thin active layer confined by parallel n‐ and p‐AlxGa1−xAs layers with a high mole fraction of AlAs (x=0.4) and perpendicular p−‐AlyGa1−yAs layers with a low mole fraction of AlAs (y=0.25). It is shown that most of the laser power can be coupled out into the low‐loss perpendicular layers and emitted from the end facets, resulting in highly collimated beams with a beam divergence of about 1°.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Information‐storage device using surface diodes

C. G. Kirkpatrick, G. E. Possin, and J. F. Norton

Appl. Phys. Lett. 30, 592 (1977); http://dx.doi.org/10.1063/1.89248 (3 pages)

Online Publication Date: 26 August 2008

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A concept for a high‐density memory‐storage device is described. Information is recorded as small implanted p+ (or n+) diodes, formed by a focused ion beam, on the n+ (or p+) surface of a large‐area diode and read by a focused electron beam. Preliminary experimental results using ion implantation through an aperture mask to simulate a focused ion beam, and a scanning electron microscope for readout, demonstrate better than 0.5‐μ bit spacing. Evaluation indicates that 1010 bits/cm2 storage density is possible, with ≳10 Mbits/sec write/read rates, and access times <30 μsec to 1011‐bit data fields.
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89.20.Ff Computer science and technology
07.05.Bx Computer systems: hardware, operating systems, computer languages, and utilities
85.30.De Semiconductor-device characterization, design, and modeling
29.27.-a Beams in particle accelerators

A new acceptor level in indium‐doped silicon

R. Baron, M. H. Young, J. K. Neeland, and O. J. Marsh

Appl. Phys. Lett. 30, 594 (1977); http://dx.doi.org/10.1063/1.89249 (3 pages) | Cited 42 times

Online Publication Date: 26 August 2008

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A new acceptor level located 0.111±0.002 eV from the valence band with a peak photoionization cross section of (1.4±0.6) ×10−16 cm2 has been observed in indium‐doped silicon. Its presence is revealed both by the low‐temperature slope of Hall measurements versus temperature and by the spectral response of the photoconductivity. The concentration of this 0.111‐eV level is strongly correlated with the concentration of indium, suggesting that an In complex is responsible for this center.
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78.40.Fy Semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.My Galvanomagnetic and other magnetotransport effects
78.30.-j Infrared and Raman spectra

On the establishment of an inversion layer in p‐ and n‐type silicon substrates under conditions of high oxide fields

P. M. Solomon

Appl. Phys. Lett. 30, 597 (1977); http://dx.doi.org/10.1063/1.89250 (2 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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It has been observed that an inversion layer cannot form in a p‐type silicon substrate when the Fowler‐Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n‐type substrates, the formation of the inversion layer is unaffected by the oxide current.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Ht High-field and nonlinear effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

The distribution of gold and oxygen in solid phase epitaxy Si films

A. Christou, J. E. Davey, H. M. Day, and H. B. Dietrich

Appl. Phys. Lett. 30, 598 (1977); http://dx.doi.org/10.1063/1.89251 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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Silicon films deposited on Au/Si layers at deposition temperatures at or above 380 °C are single crystal, while Si films deposited on Si with a native oxide are amorphous up to 500 °C and ordered polycrystalline above 500 °C. The initial gold (300 Å) deposit migrates to the growing epitaxy surface where it nucleates in clusters. RBS and AES analysis indicated that 0.1 at.% gold remains distributed throughout the epitaxial film.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Conduction and trapping of electrons in highly stressed ultrathin films of thermal SiO2

Eli Harari

Appl. Phys. Lett. 30, 601 (1977); http://dx.doi.org/10.1063/1.89252 (3 pages) | Cited 51 times

Online Publication Date: 26 August 2008

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Films of thermal SiO2 in the thickness range 30−300 Å were stressed at fields approaching breakdown. Intrinsic breakdown was observed to be preceded by generation of a very high density of electron traps. These traps must be energetically located at least 4 eV below the SiO2 conduction band and may be assocated with broaken Si‐O bonds. The ultimate breakdown strength of ultrathin films was found to be (2.8±0.4) ×107 V/cm. The present work suggests a new mechanism to explain intrinsic breakdown in films of thermal SiO2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ht High-field and nonlinear effects

Tunneling involving defects in LPE In1−xGaxP1−zAsz(x∼0.12, z∼0.26) double‐heterojunction lasers

E. A. Rezek, M. J. Ludowise, H. Shichijo, P. D. Wright, N. Holonyak, and H. W. Korb

Appl. Phys. Lett. 30, 604 (1977); http://dx.doi.org/10.1063/1.89253 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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Defect‐assisted (’’two‐step’’) tunneling is observed in the I‐V and dI/dV characteristics of LPE In1−xGaxP1−zAsz double‐heterojunction laser diodes (Jth∼4.7×102 A/cm2, λ∼1.05 μm, 77 °K). The change in conductance (’’turn‐off’’) at zero bias due to resonant‐elastic tunneling, and a related change at 40–60 mV involving acceptor states, are compared with similar data on Zn‐diffused InxGa1−xAs laser diodes, and indicate that the Zn dopant in either type of laser diode is the main source of the defects involved in the two‐step tunneling.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Dependence of maximum trappable field on superconducting Nb3Sn cylinder wall thickness

Mario Rabinowitz, H. W. Arrowsmith, and S. D. Dahlgren

Appl. Phys. Lett. 30, 607 (1977); http://dx.doi.org/10.1063/1.89254 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Uniform dipole magnetic fields from 1.9 to 22.4 kOe were permanently trapped, with high fidelity to the original field, transversely to the axes of hollow Nb3Sn superconducting cylinders. These cylinders were constructed by helically wrapping multiple layers of superconducting ribbon around a mandrel. This is the highest field yet trapped, the first time trapping has been reported in such helically wound taped cylinders, and the first time the maximum trappable field has been experimentally determined as a function of cylinder wall thickness.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.-b Superconducting materials other than cuprates
41.20.Gz Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems
85.25.-j Superconducting devices

High‐temperature Nb3Sn thin‐film SQUID’s

C. T. Wu and C. M. Falco

Appl. Phys. Lett. 30, 609 (1977); http://dx.doi.org/10.1063/1.89255 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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We have fabricated thin‐film Nb3Sn weak links and rf SQUID’s operating at temperatures ≳14.5 K. The properties of the weak links as well as the fabrication technique and operating characteristics of the SQUID’s are described.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
74.78.-w Superconducting films and low-dimensional structures

High‐energy gamma spectra detected with imporved HgI2 spectrometers at room temperature

I. Beinglass, G. Dishon, A. Holzer, S. Ofer, and M. Schieber

Appl. Phys. Lett. 30, 611 (1977); http://dx.doi.org/10.1063/1.89256 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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The detection of the photopeak of the 662‐keV γ ray of 137Cs with a full width at half‐maximum (FWHM) of only 6.5 keV by a 0.5‐mm‐thick improved stoichiometry HgI2 crystal is reported. The 1173‐ and 1332‐keV γ photopeaks of 60Co have also been resolved for the first time. Polarization effects were negligible.
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29.30.Kv X- and γ-ray spectroscopy
29.40.Wk Solid-state detectors
87.53.Bn Dosimetry/exposure assessment
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