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15 Jun 1977

Volume 30, Issue 12, pp. 617-670


Theory of Mössbauer line broadening due to correlated diffusion in crystals

Dieter Wolf

Appl. Phys. Lett. 30, 617 (1977); http://dx.doi.org/10.1063/1.89281 (3 pages) | Cited 27 times

Online Publication Date: 26 August 2008

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The line‐broadening effect of correlations between successive jumps of a Mössbauer atom is investigated. The ’’encounter model’’ originally developed for nuclear‐magnetic‐resonance diffusion studies is applied to describe temporal and spatial correlations which may cause significantly smaller linewidths than a random‐walk diffusion mechanism. This straightforward analytic generalization of the random‐walk results is capable of eliminating some of the earlier discrepancies between diffusion constants determined from radio‐tracer and Mössbauer experiments.
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76.80.+y Mössbauer effect; other γ-ray spectroscopy
66.30.-h Diffusion in solids

A new reflective dichroic liquid‐crystal display device

H. S. Cole and R. A. Kashnow

Appl. Phys. Lett. 30, 619 (1977); http://dx.doi.org/10.1063/1.89282 (3 pages) | Cited 16 times

Online Publication Date: 26 August 2008

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A new reflective dichroic display device is described. The only components include a quarter‐wave retarder positioned between an aligned dichroic nematic liquid‐crystal display cell and a diffuse metallic reflector. This configuration allows both polarizations of incident light to be absorbed without affecting the polarizer‐free high brightness voltage activated state.
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85.60.Pg Display systems
64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects

Ionic conductivity in Li3N single crystals

U. v. Alpen, A. Rabenau, and G. H. Talat

Appl. Phys. Lett. 30, 621 (1977); http://dx.doi.org/10.1063/1.89283 (3 pages) | Cited 90 times

Online Publication Date: 26 August 2008

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Lithium ionic conductivity of Czochralski‐grown Li3N single crystals using electrochemical transport measurements is reported. The highest Li ionic conductivity was found perpendicular to the hexagonal c axis, the anisotropy decreasing from two to one decade between 20 and 200 °C. Ambient Li ionic conductivity parallel to the Li2N planes of the layer structure was found to be σ=10−3 Ω−1 cm−1 with an activation energy of 0.25 eV. These values are comparable with the best data reported for Li β‐alumina single crystals.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
82.47.-a Applied electrochemistry
82.45.-h Electrochemistry and electrophoresis

Free‐carrier plasma effects in ion‐implanted amorphous layers of silicon

W. G. Spitzer, C. N. Waddell, G. H. Narayanan, J. E. Fredrickson, and S. Prussin

Appl. Phys. Lett. 30, 623 (1977); http://dx.doi.org/10.1063/1.89284 (4 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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A high‐conductivity layer has been observed within the amorphous region of heavily implanted (6×1016 cm−2 of 2.7‐MeV 31P ions) (111) surfaces of single‐crystal Si after 500 °C annealing. The conducting layer was at the projected range of the 31P+ ions, and its location was determined from spreading resistance measurements. Microscopic examination, Coates‐Kikuchi lines (SEM), and ion channeling showed that the conducting layer was within an amorphous region. Very‐large‐amplitude low‐frequency ir interference reflection fringes developed with the onset of the conducting layer. We suggest that the large fringes are related to the dispersion produced by a damped plasma. Simplified model calculations are presented. The high‐frequency interference fringes related to the implantation‐induced structural damage virtually disappeared after annealing at 600 °C but the low‐frequency ’’plasma fringes’’ remain. SEM and microscopic examination showed that the amorphous region had epitaxially recrystallized.
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61.80.Jh Ion radiation effects
72.30.+q High-frequency effects; plasma effects
78.30.-j Infrared and Raman spectra

Surface‐layer composition changes in sputtered alloys and compounds

Z. L. Liau, W. L. Brown, R. Homer, and J. M. Poate

Appl. Phys. Lett. 30, 626 (1977); http://dx.doi.org/10.1063/1.89285 (3 pages) | Cited 70 times

Online Publication Date: 26 August 2008

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Compositional changes of binary alloys and compounds have been observed (by Rutherford backscattering techniques) as a result of rare‐gas sputtering in the energy range 20–80 keV. After sputtering, the heavier components were generally found to be enriched in a surface layer whose thickness corresponded approximately to the range of the sputtering ion; the compositions of these enriched surface layers were independent of the mass and energy of the sputtering ions. This phenomenon of surface layer enrichment is interpreted as due to preferential sputtering from the surface in combination with defect‐enhanced diffusion.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering
61.80.Jh Ion radiation effects
64.75.-g Phase equilibria

Alternate‐monolayer single‐crystal GaAs‐AlAs optical waveguides

J. L. Merz, A. C. Gossard, and W. Wiegmann

Appl. Phys. Lett. 30, 629 (1977); http://dx.doi.org/10.1063/1.89286 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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Optical waveguides have been fabricated by repeated alternate molecular‐beam depositions of ultrathin layers of GaAs and AlAs of from one to eight monolayers thickness per deposition. For an average core composition of 10% Al, optical losses of 2.0–2.5 cm−1 have been measured between 1.1 eV and the band gap. Transmission electron micrographs prove that the layered structures of these waveguides corresponds closely to the programmed deposition sequences.
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42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

High‐sensitive holographic storage in Ce‐doped SBN

K. Megumi, H. Kozuka, M. Kobayashi, and Y. Furuhata

Appl. Phys. Lett. 30, 631 (1977); http://dx.doi.org/10.1063/1.89287 (3 pages) | Cited 44 times

Online Publication Date: 26 August 2008

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High optical sensitivity is observed in 0.1 wt% Ce‐doped strontium barium niobate (SBN) crystals in the absence of an external electric field. Only 5–10 mJ/cm2 of incident 0.488‐μm radiation is required to produce 10% diffraction efficiency, while the energy to erase holograms from the 80% to its 1/e diffraction efficiency level is 30–40 mJ/cm2 at the same wavelength. Holograms stored in Ce‐doped SBN persist at least one month (decay time constant) if kept in the dark at room temperature.
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42.40.Kw Holographic interferometry; other holographic techniques
78.20.Jq Electro-optical effects
72.40.+w Photoconduction and photovoltaic effects
42.70.Gi Light-sensitive materials

Coherent radiation from a nitrogen laser

G. C. Thomas, G. Chakrapani, and C. M. L. Kerr

Appl. Phys. Lett. 30, 633 (1977); http://dx.doi.org/10.1063/1.89264 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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A spatially coherent oscillator at 337 nm was made by placing a nitrogen discharge inside an unstable resonator of high magnification. An energy of 205 μJ was achieved, with 100 μJ in a diffraction‐limited spot. The diffraction‐limited coherence could be maintained during amplification to 1.0 mJ in a second discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A scalable multiatmosphere high‐power XeF laser

W. J. Sarjeant, A. J. Alcock, and K. E. Leopold

Appl. Phys. Lett. 30, 635 (1977); http://dx.doi.org/10.1063/1.89265 (3 pages) | Cited 17 times

Online Publication Date: 26 August 2008

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A scalable uv‐preionized transverse discharge XeF laser has been operated at pressures up to 5 atm. uv output energies in excess of 250 mJ with a minimum pulse duration of less than 20 ns have been obtained from an active volume of 0.18 liter.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Hc Glow; corona

A purely chemical HCl laser

S. J. Arnold, K. D. Foster, D. R. Snelling, and R. D. Suart

Appl. Phys. Lett. 30, 637 (1977); http://dx.doi.org/10.1063/1.89266 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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The kinetics of the purely chemical production of nonequilibrium concentrations of Cl atoms from the ClO2/NO chain reaction is discussed. It is shown that this chemical system is suitable for producing Cl atoms to pump a cw HCl laser and that there are three modes of accomplishing the prepumping chemistry. A hybrid HCl/CO2 laser was operated using this chemistry which gave 7 mW output power at 10.6 μm. A transverse flow HCl laser was operated having a multiline output power of 13 W and a chemical efficiency of 8%. The three modes of accomplishing the chemistry were demonstrated with a transverse flow HCl laser.
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42.55.Ks Chemical lasers

Direct nuclear pumping of a 3He‐Xe laser

C. R. Mansfield, P. F. Bird, J. F. Davis, T. F. Wimett, and H. H. Helmick

Appl. Phys. Lett. 30, 640 (1977); http://dx.doi.org/10.1063/1.89267 (2 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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Lasing of a 3He‐Xe laser excited by thermal neutron fluxes has been observed at 2.026, 3.508, and 3.652 μm. The dependence of output wavelength on partial pressure of Xe is presented.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Minority‐carrier lifetime reduction in the initial degradation of long‐life AlxGa1−xAs‐GaAs lasers

Daisuke Kato

Appl. Phys. Lett. 30, 642 (1977); http://dx.doi.org/10.1063/1.89268 (2 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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The degradation of cw double‐heterostructure semiconductor lasers is analyzed. It is clearly shown that the recoverable initial degradation mode of long‐life AlxGa1−xAs‐GaAs lasers is caused by a reduction of minority‐carrier lifetime, the effect of which is readily distinguished from other possible processes such as increased cavity loss or minority‐carrier leakage.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Peaked Schottky‐barrier solar cells by Al‐Si metallurgical reactions

H. C. Card, E. S. Yang, and P. Panayotatos

Appl. Phys. Lett. 30, 643 (1977); http://dx.doi.org/10.1063/1.89269 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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The dark currents in Al‐nSi Schottky‐barrier solar cells are appreciably reduced by low‐temperature heat treatments (T<577 °C) which induce metallurgical reactions between the Al and Si. Open‐circuit voltages of these cells can be increased by more than 0.2 V as a result of this mechanism.
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84.60.Jt Photoelectric conversion
73.30.+y Surface double layers, Schottky barriers, and work functions
72.40.+w Photoconduction and photovoltaic effects

n‐indium tin oxide/p‐indium phosphide solar cells

K. S. Sree Harsha, K. J. Bachmann, P. H. Schmidt, E. G. Spencer, and F. A. Thiel

Appl. Phys. Lett. 30, 645 (1977); http://dx.doi.org/10.1063/1.89270 (2 pages) | Cited 32 times

Online Publication Date: 26 August 2008

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n‐indium tin oxide/p‐indium phosphide (n‐ITO/p‐InP) solar cells have been prepared by ion‐beam deposition of indium tin oxide on p‐InP single‐crystal substrates. The cells have a solar power conversion efficiency of 14.4% at air mass 2 (AM2) when provided with antireflection coatings.
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84.60.Jt Photoelectric conversion
81.15.Jj Ion and electron beam-assisted deposition; ion plating
72.40.+w Photoconduction and photovoltaic effects

Electron tunneling spectroscopy—External doping with organic molecules

R. C. Jaklevic and M. R. Gaerttner

Appl. Phys. Lett. 30, 646 (1977); http://dx.doi.org/10.1063/1.89271 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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We report the observation of inelastic electron tunneling spectra of molecules introduced into completely fabricated tunnel junctions. By using an external doping method several kinds of molecules have been introduced into Al–Al oxide–Pb diodes yielding strong spectra characteristic of the particular molecules. This technique is a new way of detecting and studying molecules interacting with surfaces. The high sensitivity and greater simplicity of this method increases possible applications of tunneling spectroscopy.
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73.40.Gk Tunneling
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Channeled‐substrate planar structure (AlGa)As injection lasers

K. Aiki, M. Nakamura, T. Kuroda, and J. Umeda

Appl. Phys. Lett. 30, 649 (1977); http://dx.doi.org/10.1063/1.89272 (3 pages) | Cited 46 times

Online Publication Date: 26 August 2008

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Undesirable nonlinear ’’kinks’’ in light‐output–vs–current characteristics of stripe geometry double‐heterostructure (DH) injection lasers are significantly reduced by stabilizing the transverse modes along the junction plane. Built‐in passive guiding mechanism is introduced by growing planar (AlGa)As/GaAs DH layers on a grooved GaAs substrate.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

A new semiconductor superlattice

G. A. Sai‐Halasz, R. Tsu, and L. Esaki

Appl. Phys. Lett. 30, 651 (1977); http://dx.doi.org/10.1063/1.89273 (3 pages) | Cited 197 times

Online Publication Date: 26 August 2008

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We treat theoretically, through the use of Bloch functions, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role. The result indicates that this superlattice offers new intriguing features, realizable with the In1−xGaxAs‐GaSb1−y Asy system. In addition, the tunneling probability is calculated across a barrier involving this system.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
73.40.Gk Tunneling
72.80.Ey III-V and II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Study of chemisorbed oxygen on tungsten using secondary ion mass spectrometry

Ming L. Yu

Appl. Phys. Lett. 30, 654 (1977); http://dx.doi.org/10.1063/1.89274 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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Secondary ion mass spectrometry has been used to study the chemisorption of oxygen on W(100). Plots of O− versus O+ and WO−2 versus O+ show large hysteresis in the adsorption‐desorption cycle. We propose to explain these observations by the structural and adsorption site changes during adsorption and thermal annealing of the adsorbed layer.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Plasma oxidation of aluminum film on GaAs—A study by Auger spectroscopy and transmission electron microscopy

R. P. H. Chang, C. C. Chang, and T. T. Sheng

Appl. Phys. Lett. 30, 657 (1977); http://dx.doi.org/10.1063/1.89275 (3 pages) | Cited 20 times

Online Publication Date: 26 August 2008

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Plasma oxidation of thin polycrystalline aluminum films (∼100 Å) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain‐boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga‐As‐ oxide layers on both sides of the Al‐oxide film indicating that the oxidation of GaAs proceeds by an electric‐field‐assisted in‐migration of oxygen through the Al‐oxide layer toward the interface and the out‐migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al‐oxide on GaAs. By using the Al‐oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga‐As‐oxide film with a Ga/As concentration ratio of unity all the way to the GaAs substrate can also be achieved.
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81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology

Broadband generation of tunable Josephson radiation at microwave frequencies

C. Varmazis, J. E. Lukens, and T. F. Finnegan

Appl. Phys. Lett. 30, 660 (1977); http://dx.doi.org/10.1063/1.89276 (2 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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Radiation with an integrated power of about 10−12 W has been obtained from a microbridge Josephson junction. The output can be continuously tuned between 2 and 12 GHz. The frequency and current dependence of radiated power and linewidth are in disagreement with the resistively shunted junction model.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
84.40.Lj Microwave integrated electronics

Changes in the upper critical fields and critical currents of Nb3Sn and V3Ga owing to neutron radiation damage

C. L. Snead

Appl. Phys. Lett. 30, 662 (1977); http://dx.doi.org/10.1063/1.89277 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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Ambient‐temperature reactor irradiations of Nb3Sn and V3Ga filamentary superconductors have produced increases in the critical current Ic over a low‐fluence regime <∼2×1018 n/cm2 (E≳1.0 MeV) followed by severe reductions of Ic at higher fluences as the critical temperature Tc→0. The low‐fluence increases in Ic are attributed to increases in the upper critical field Hc2 with increasing resistivity. In V3Ga, however, because of paramagnetic effects, it appears that the changes in the Ginzburg‐Landau upper critical field H∗c2(GL) govern the behavior of Ic, and not the measured Hc2 as is the case in Nb3Sn. In order to compare the measured Hc2 of V3Ga with estimates based upon H∗c2(GL), spin‐orbit scattering must be included in the Maki analysis of Hc2. The spin‐orbit scattering does not increase with increasing normal‐state resistivity, but rather appears to be decreasing. From the irradiation behavior of Hc2 and H∗c2(GL) in V3Ga it is argued that in treatments such as flux‐pinning analysis where a reduced field h≡H/Hc2 is used to established scaling laws, it is necessary to use a reduced field h∗=H/H∗c2(GL) because of the paramagnetic limiting effects.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.25.Sv Critical currents
61.80.Hg Neutron radiation effects
74.70.-b Superconducting materials other than cuprates

Composite superconducting transition edge bolometer

J. Clarke, P. L. Richards, and N.‐H. Yeh

Appl. Phys. Lett. 30, 664 (1977); http://dx.doi.org/10.1063/1.89278 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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A composite far‐infrared bolometer has been constructed that uses an aluminum film at the superconducting transition temperature of 1.3 K as the temperature‐sensitive element. The film is evaporated on one edge of a 4×4‐mm sapphire substrate, which is coated on the reverse side with an absorbing film of bismuth. The best bolometer has an electrical NEP of (1.7±0.1) ×10−15 W Hz−1/2 at 2 Hz, and a specific detectivity D∗ of (1.1±0.1) ×1014 cm W−1 Hz1/2. This measured electrical NEP is within a factor 2 of the fundamental thermal noise limit.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
74.78.-w Superconducting films and low-dimensional structures
95.85.Gn Far infrared (10-300 μm)
95.55.-n Astronomical and space-research instrumentation

Magnetostatic surface wave reflectivity of a shallow groove on a YIG film

J. P. Parekh and H. S. Tuan

Appl. Phys. Lett. 30, 667 (1977); http://dx.doi.org/10.1063/1.89279 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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A field theory for the magnetostatic surface wave (MSSW) reflectivity of a single shallow groove etched on top of an epitaxial YIG film is presented. Computed reflection characteristics are obtained for the case in which the surface of the YIG film is metallized after the groove is etched. It is found that the MSSW reflectivity of a groove is significantly larger than the SAW reflectivity of an equivalent groove on a LiNbO3 substrate.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound

Sintered Ce‐Co‐Cu‐Fe‐Ti magnets

Koichiro Inomata, Teruo Oshima, Tadashi Ido, and Masakazu Yamada

Appl. Phys. Lett. 30, 669 (1977); http://dx.doi.org/10.1063/1.89280 (2 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Ce(Co‐Cu‐Fe‐Ti)z alloys were prepared with 5.6⩽z⩽7.4. They were ground into powders and sintered in Ar atmosphere. It was found that Ti enhanced coercivity and rectangularity. A permanent magnet with Br=7400 G, IHc=6100 Oe, (BH)max=13 MG Oe, and rectangular hysteresis loop was achieved on sintered samples having the composition Ce(Co0.727Fe0.12Cu0.14 Ti0.013)6.5.
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07.55.Db Generation of magnetic fields; magnets
85.70.-w Magnetic devices
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.50.Bb Fe and its alloys
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