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15 Jan 1977

Volume 30, Issue 2, pp. 73-127


A model for the formation of stacking faults in silicon

S. Mahajan, G. A. Rozgonyi, and D. Brasen

Appl. Phys. Lett. 30, 73 (1977); http://dx.doi.org/10.1063/1.89292 (3 pages) | Cited 48 times

Online Publication Date: 26 August 2008

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A model for the evolution of stacking faults in silicon during oxidation and during aging of silicon containing oxygen is proposed. Based on the proposed mechanism, the observed role of dislocations, point‐defect clusters constituting the swirl pattern, and abrasion‐induced strain in the generation of stacking faults can be accounted for in a unified manner.
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61.72.Nn Stacking faults and other planar or extended defects

Singular instabilities on LPE GaAs, CVD Si, and MBE InP growth surfaces

D. L. Rode, W. R. Wagner, and N. E. Schumaker

Appl. Phys. Lett. 30, 75 (1977); http://dx.doi.org/10.1063/1.89293 (4 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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Singular instabilities at crystal growth interfaces of group‐IV and III‐V semiconductors lead to as‐grown surfaces optical devices, however, requirethe achievement of smoth planar layers. We consider the stability of surfaces with respect to singular instabilities and show that stable planar growth interfaces occur at slight deviati8ons from the singular orientation where monatomic growth steps are uniformly arrayed to minimize the interfacial energy resulting from step‐step attractive interactions. These results are applied to the elimination of crystal growth terraces in LPE AlGaAs‐GaAs laser material. Similar considerations appear to explain pyramid formations on CVD Si and on MBE InP.
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68.55.-a Thin film structure and morphology
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.55.Px Semiconductor lasers; laser diodes

Acoustic pulse echo measurements at 200 MHz

B. T. Khuri‐Yakub and G. S. Kino

Appl. Phys. Lett. 30, 78 (1977); http://dx.doi.org/10.1063/1.89294 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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We have carried out acoustic pulse echo measurement with 2‐nsec‐wide pulses. These are used to excite a zinc oxide layer deposited on a conically shaped sapphire buffer rod 2 mm in diameter at the tip of the cone. We have found that an easy way to make contact between the sapphire rod and a solid material under study is by means of a gold foil. We have measured the thickness of a nickel plating on aluminum of the order of 50 μm, and that of a 134‐μm‐thick glass slide to within 2%.
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43.58.+z Acoustical measurements and instrumentation
81.70.-q Methods of materials testing and analysis
06.60.Jn High-speed techniques (microsecond to femtosecond)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Aging behavior of radiation‐damaged titanium tritide from 3He NMR

Harry T. Weaver

Appl. Phys. Lett. 30, 80 (1977); http://dx.doi.org/10.1063/1.89295 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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Transient nuclear magnetic resonance (NMR) measurements on 3He, generated by β decay and contained in aging titanium tritide (TiH1.8), have been carried out. The experiments were conducted over a period of about three years during which the rate of helium evolution from the sample abruptly increases. Qualitative analysis of the temperature dependence of the 3He NMR correlates the onset of rapid increase in release rate with the precipitation of large bubbles within the solid. Further consideration suggests these bubbles are preliminary stages for release, since only a small fraction (<10%) of the 3He in TiH1.8 is ever observed in this configuration. This is the first data which directly infers 3He bubbles at the time of release, although blisters have been observed in earlier experiments.
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76.60.Cq Chemical and Knight shifts
61.80.Lj Atom and molecule irradiation effects

Effect of dust on glass fiber strength

Robert D. Maurer

Appl. Phys. Lett. 30, 82 (1977); http://dx.doi.org/10.1063/1.89296 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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A model is developed for the effect of atmospheric dust on fiber strength. It is assumed that dust striking the fiber as it is formed sticks to form flaws. Comparison of the model with experimental data shows that it provides a reasonable description and can be useful in interpreting fiber strength.
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42.79.Gn Optical waveguides and couplers
46.50.+a Fracture mechanics, fatigue and cracks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.-i Fiber optics

Picosecond optoelectronic switching in GaAs 

Chi H. Lee

Appl. Phys. Lett. 30, 84 (1977); http://dx.doi.org/10.1063/1.89297 (3 pages) | Cited 62 times

Online Publication Date: 26 August 2008

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Picosecond optical pulses are used to switch a GaAs slab in a charged line pulser. The repetition rate of the device is 1 GHz. The effect of the Ridley‐Watkins‐Hilsum mechanism on the device performance is discussed.
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85.60.-q Optoelectronic devices
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
72.60.+g Mixed conductivity and conductivity transitions
06.60.Jn High-speed techniques (microsecond to femtosecond)

Al2O3 half‐wave films for long‐life cw lasers

I. Ladany, M. Ettenberg, H. F. Lockwood, and H. Kressel

Appl. Phys. Lett. 30, 87 (1977); http://dx.doi.org/10.1063/1.89298 (2 pages) | Cited 47 times

Online Publication Date: 26 August 2008

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Long‐term operating‐life data are reported for (AlGa)As cw laser diodes. The use of half‐wave Al2O3 facet coatings is shown to eliminate facet erosion, allowing stable diode operation at constant current for periods in excess of 10 000 h.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Simultaneous holographic and photocurrent studies of the photorefractive effect in LiTaO3 and LiNbO3

J. M. Spinhirne, D. Ang, C. S. Joiner, and T. L. Estle

Appl. Phys. Lett. 30, 89 (1977); http://dx.doi.org/10.1063/1.89299 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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In reduced LiNbO3 : Mn both the photorefractive sensitivity and the simultaneously measured photocurrent result from drift with a polarization‐dependent effective ’’internal field’’ of about 6 kV/cm. In reduced undoped LiTaO3 the observed difference in applied fields of the minimum photorefractive sensitivity and zero photocurrent imply charge transport is by a mechanism that cannot be completely described by diffusion and drift in an electric field. The direct measurement of the harmonic content of phase gratings written in several LiNbO3 and LiTaO3 crystals shows termination of charge‐transport results from the space‐charge field of the hologram.
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72.40.+w Photoconduction and photovoltaic effects
42.40.-i Holography

Efficient harmonic generation from 532 to 266 nm in ADP and KD∗P

J. Reintjes and R. C. Eckardt

Appl. Phys. Lett. 30, 91 (1977); http://dx.doi.org/10.1063/1.89300 (3 pages) | Cited 13 times

Online Publication Date: 26 August 2008

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Second harmonic generation of mode‐locked pulses in ADP and KD∗P from 532 to 266 nm with 85% conversion is reported. Two‐photon absorption coefficients are measured for the two materials and found to be relatively unimportant in the limitation of harmonic conversion compared to the effects of phase mismatch and dispersion.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.62.-b Laser applications
42.50.-p Quantum optics

Vibration‐induced modulation of fiberguide transmission

D. F. Nelson, D. A. Kleinman, and K. W. Wecht

Appl. Phys. Lett. 30, 94 (1977); http://dx.doi.org/10.1063/1.89301 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Linear intensity modulation of several percent in fiberguide transmission caused by flexural vibrations has been observed in bent fiberguides and attributed to modulated bending loss. Measurements of bending loss are presented which support this interpretation.
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42.81.-i Fiber optics
42.79.Hp Optical processors, correlators, and modulators

Wideband modulation of the C13O216 laser R (18) line at 10.784 μm with an N14H3 Stark cell

C. K. Asawa and T. K. Plant

Appl. Phys. Lett. 30, 96 (1977); http://dx.doi.org/10.1063/1.89302 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Intense Stark resonance absorptions near 10.7 μm of the R (18) and R (24) lines and a weaker absorption of the R (26) line of the isotopic C13O216 laser by N14H3 are reported. Wideband modulation experiments with an N14H3 Stark cell and the R (18) line are presented. Key modulation features are the 2‐ns rise time, high modulation depths, low power dissipation, short Stark modulator cell (10 cm), high saturation intensity (≳8 W/cm2), new spectral features of the modulated signal versus Stark bias, and a demonstration of 180‐Mbit random word modulation.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.55.+b Optical activity and dichroism
33.57.+c Magneto-optical and electro-optical spectra and effects

Dissociative attachment of electrons to F2

Hao‐Lin Chen, R. E. Center, Daniel W. Trainor, and W. I. Fyfe

Appl. Phys. Lett. 30, 99 (1977); http://dx.doi.org/10.1063/1.89303 (3 pages) | Cited 25 times

Online Publication Date: 26 August 2008

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By measuring the equilibrated sustainer current density in F2/N2 mixtures under controlled discharge conditions, we have determined the F2 dissociative attachment rate constant at various E/P conditions. The F2+e→F∓F rate constant at an average electron energy of 1.0 eV was found to be 2.3±0.3×10−9 cm3/molecule/sec and increased with decreasing electron energy.
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82.20.Pm Rate constants, reaction cross sections, and activation energies
34.80.Gs Molecular excitation and ionization
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates

A model for uv preionization in electric‐discharge‐pumped XeF and KrF lasers

J. Hsia

Appl. Phys. Lett. 30, 101 (1977); http://dx.doi.org/10.1063/1.89304 (3 pages) | Cited 25 times

Online Publication Date: 26 August 2008

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A mechanism is proposed to explain the improvement in discharge uniformity observed in pure electric‐discharge‐pumped rare‐gas halide lasers when a uv preionizer is used to precondition the laser medium. In the model the F− ions formed by dissociative attachment following uv photoionization act as a reservoir from which electrons are easily released when the main discharge field is applied. The model shows that a time delay is required between the application of the uv and the main discharge, and also that the effect of the preionizer can last some tens of microseconds despite the large electron attachment rates in the laser mixture.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Sodium passivation in HCl oxide films on Si

A. Rohatgi, S. R. Butler, F. J. Feigl, H. W. Kraner, and K. W. Jones

Appl. Phys. Lett. 30, 104 (1977); http://dx.doi.org/10.1063/1.89305 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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Chlorine has been incorporated into SiO2 films by thermal oxidation of Si in a mixture of O2 and HCl gases. Mobile sodium ions adsorbed on the oxide surface were drifted to the Si‐SiO2 interface (0.5 MV cm−1 bias at 200 °C). Passivation, defined as the fraction of mobile sodium charge neutralized, exhibited a pronounced threshold with HCl content in the growth ambient. This was partly due to a similar variation of oxide chlorine content (measured by α‐particle backscattering). For fixed growth temperature, passivation was a monotonic function of oxide chlorine content, and was only weakly dependent on the level of sodium contamination over the range 5×1011 to 1×1013 Na/cm2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
85.30.-z Semiconductor devices
81.40.Rs Electrical and magnetic properties related to treatment conditions

The charge‐flow transistor: A new MOS device

S. D. Senturia, C. M. Sechen, and J. A. Wishneusky

Appl. Phys. Lett. 30, 106 (1977); http://dx.doi.org/10.1063/1.89306 (3 pages) | Cited 23 times

Online Publication Date: 26 August 2008

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A new device, the charge‐flow transistor (CFT), has been developed to achieve integrated MOS compatibility in sensor applications, such as gas, humidity, and fire detection, where one is interested in monitoring the transverse resistance of a thin film. The resistive material is incorporated into the gate structure of the CFT in such a way that there is a time delay between the application of the gate‐to‐source voltage and the appearance of a complete channel. This time delay depends on the resistivity of the thin film. A theory of device operation is presented, together with experimental results on the first CFT’s. These results confirm the principles of operation, and demonstrate the utility of the CFT for making fully integrated sensing devices.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
72.80.Le Polymers; organic compounds (including organic semiconductors)

Preparation and characteristics of CuGaSe2/CdS solar cells

N. Romeo, G. Sberveglieri, L. Tarricone, and C. Paorici

Appl. Phys. Lett. 30, 108 (1977); http://dx.doi.org/10.1063/1.89307 (3 pages) | Cited 25 times

Online Publication Date: 26 August 2008

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p‐CuGaSe2/n‐CdS heterojunctions have been prepared by depositing CdS films on p‐type CuGaSe2 single crystals whose initial resistivity was 10−2 Ω cm and changed to 1 Ω cm after the CdS film deposition. The CdS films, which were grown by a multisources method, exhibit a room‐temperature resistivity of 0.1 Ω cm. The absolute quantum efficiency of these devices as photovoltaic detectors reaches the value of 80% at a wavelength of 5800 Å. As solar cells, these heterojunctions at 25 °C display a solar power conversion efficiency of 5% when they are exposed to the solar light whose intensity is 71 mW/cm2. When the heterojunctions are directly polarized, they emit light in a broad band which is centered at ∼7700 Å. An external electroluminescent emission efficiency of about 0.05% has been measured at liquid‐nitrogen temperature.
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84.60.Jt Photoelectric conversion
85.30.Hi Surface barrier, boundary, and point contact devices
72.40.+w Photoconduction and photovoltaic effects

GaAs lasers with consistently low degradation rates at room temperature

A. R. Goodwin, J. R. Peters, M. Pion, and W. O. Bourne

Appl. Phys. Lett. 30, 110 (1977); http://dx.doi.org/10.1063/1.89308 (4 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Simple oxide‐insulated stripe‐geometry double‐heterostructure lasers have been made and life tested as part of an extensive laser reliability program. Early lasers have now been on test for more than 13 000 h and the first batch test has exceeded 7000 h. All the batch test lasers show slow degradation and at least 85% have rates of increase of threshold below 3.3% per 1000 h. Simple visual prebonding selection was used to eliminate defective lasers, and these results demonstrate that within this limitation lives in excess of 7000 h can be consistently achieved.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Wide‐band electro‐optical tuning of semiconductor lasers

C. L. Tang, V. G. Kreismanis, and J. M. Ballantyne

Appl. Phys. Lett. 30, 113 (1977); http://dx.doi.org/10.1063/1.89309 (4 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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A semiconductor laser having a narrow emission bandwidth (<1 Å) with center wavelength electronically tunable over a large spectral range is demonstrated for the first time. This electro‐optically tunable infrared semiconductor laser source should have interesting applications in, for example, optical communications systems, optical radar, and spectroscopy.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Ci Filters, zone plates, and polarizers
78.20.Jq Electro-optical effects
FREE

Saturation of the junction voltage in stripe‐geometry (AlGa)As double‐heterostructure junction lasers: A comment

D. O. North and H. S. Sommers

Appl. Phys. Lett. 30, 116 (1977); http://dx.doi.org/10.1063/1.89310 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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Recently published data concerning a contemporary well‐behaved cw stripe‐geometry injection laser was accompanied by the assertion that above threshold both the junction voltage and the spontaneous emission exhibit ’’complete saturation’’. This paper shows by detailed analysis of the data that in fact the small incompleteness of the saturation agrees with the value predicted by the new nonlinear theory of injection lasers. The junction voltage, spontaneous emission, and mode powering of this cw laser are interconnected by the theory just as they were in the various types of pulsed lasers already described.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.45.+h Stimulated emission

Uniform large‐area high‐gain silicon avalanche radiation detectors from transmutation doped silicon

V. L. Gelezunas, W. Siebt, and G. Huth

Appl. Phys. Lett. 30, 118 (1977); http://dx.doi.org/10.1063/1.89288 (3 pages)

Online Publication Date: 26 August 2008

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Significant improvements in gain and energy resolution are reported for very‐large‐area p‐n‐junction‐type silicon avalanche radiation detectors which were made from neutron‐doped silicon. Detectors with frontal areas of about 20 mm2 had gains which ranged from 400 (1.2 keV FWHM at 5.9 keV) to over 800 (2.2 keV FWHM at 5.9 keV). A 330‐mm2 device showed a maximum gain of 150 with an energy resolution of 16 keV FWHM at 22 keV.
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29.40.Wk Solid-state detectors
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
61.80.Hg Neutron radiation effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

The Si/SiO2 interface examined by cross‐sectional transmission electron microscopy

J. Blanc, C. J. Buiocchi, M. S. Abrahams, and W. E. Ham

Appl. Phys. Lett. 30, 120 (1977); http://dx.doi.org/10.1063/1.89289 (3 pages) | Cited 28 times

Online Publication Date: 26 August 2008

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Thin (200–300 Å) cross sections of Si/SiO2 have been examined by transmission electron microscopy at a resolution of better than 10 Å to search for crystalline Si protrusions into, or islands in, the thermally grown SiO2. Within the resolution obtained, no evidence was found for any phase separation within the amorphous oxide layer.
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73.40.Ns Metal-nonmetal contacts

Series arrays of superconducting‐normal‐superconducting junctions in the Pb‐Sn lamellar eutectic alloy

J. M. Dupart and J. Baixeras

Appl. Phys. Lett. 30, 123 (1977); http://dx.doi.org/10.1063/1.89290 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Series arrays of about/100 superconducting‐normal‐superconducting junctions have been obtained in the oriented Pb‐Sn lamellar eutectic alloy. The temperature and normal width dependences of the critical currents flowing through these S‐N‐S structures have been studied and can be explained in the framework of the Bardeen‐Johnson theory for systems in the clean limit.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

The effect of ion implantation on the minimum bubble drive field in magnetic garnet films

J. Engemann and T. Hsu

Appl. Phys. Lett. 30, 125 (1977); http://dx.doi.org/10.1063/1.89291 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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The investigation of the minimum bubble drive field (ΔHz,min) in ion‐implanted 5‐μm magnetic garnet films shows that it depends strongly on the implantation conditions such as the implantation energy and dosage. With increasing implantation energy and dosage adjusted so that the maximum damage level remains constant, the ΔHz,min decreases monotonically. Varying the dosage while keeping the implantation energy constant leads to a pronounced minimum in ΔHz,min. Reductions of the ΔHz,min by as much as 43% from that of the as‐grown films have been achieved by using proper ion implantations. The ΔHz,min in an ion‐implanted film is found also to be dependent on the applied in‐plane field Hip. With increasing Hip, the minimum drive field increases until finally the as‐grown value is reached. This behavior as well as the dependence of ΔHz,min on the different ion implantations can be explained qualitatively by a model, assuming a capping layer somewhat buried in the garnet film.
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75.80.+q Magnetomechanical effects, magnetostriction
75.70.Kw Domain structure (including magnetic bubbles and vortices)
FREE

Erratum: Shrinkage effect of stacking faults during HCl oxidation in steam

H. Shibayama, H. Masaki, H. Ishikawa, and H. Hashimoto

Appl. Phys. Lett. 30, 127 (1977); http://dx.doi.org/10.1063/1.89464 (1 page)

Online Publication Date: 26 August 2008

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Abstract Unavailable
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99.10.Cd Errata
61.72.Nn Stacking faults and other planar or extended defects
81.65.-b Surface treatments
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