APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Feb 1977

Volume 30, Issue 4, pp. 175-215


Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si

T. Y. Tan, E. E. Gardner, and W. K. Tice

Appl. Phys. Lett. 30, 175 (1977); http://dx.doi.org/10.1063/1.89340 (2 pages) | Cited 196 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Conditions for effective intrinsic gettering by oxide precipitate induced dislocations, which we suggest as an important mechanism in explaining device leakage limited yield enhancement due to oxygen in Czochralski‐grown Si wafers, are examined. The effectiveness of this mechanism is demonstrated.
Show PACS
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
68.37.-d Microscopy of surfaces, interfaces, and thin films
72.90.+y Other topics in electronic transport in condensed matter (restricted to new topics in section 72)

Nonlinear optical response of metal‐barrier‐metal junctions

B. Fan, S. M. Faris, T. K. Gustafson, and T. J. Bridges

Appl. Phys. Lett. 30, 177 (1977); http://dx.doi.org/10.1063/1.89341 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The time‐averaged current induced by incident radiation across electronic tunneling junctions is shown experimentally and theoretically to have a highly nonlinear dependence on the field intensity for a range of tunneling barrier thickness.
Show PACS
73.40.Ei Rectification
73.40.Gk Tunneling
73.40.Rw Metal-insulator-metal structures
72.40.+w Photoconduction and photovoltaic effects

Possible isotope enrichment in a dc discharge using effects of resonance trapping and cataphoresis

W. T. Silfvast

Appl. Phys. Lett. 30, 179 (1977); http://dx.doi.org/10.1063/1.89342 (4 pages) | Cited 2 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The combined effects of trapping of resonance radiation of a more abundant isotope of a gas or vapor (leading to a preferential ionization of the more abundant isotope) and cataphoresis (forcing the preferentially ionized isotope towards the cathode) will be shown to result in an enriched deposition of the less abundant isotope in the anode region of a dc discharge tube. Large isotope enrichment factors and high efficiencies appear to be possible for initially low‐abundance isotopes.
Show PACS
28.60.+s Isotope separation and enrichment
52.80.-s Electric discharges

Microsecond‐pulse insulation and intense ion beam generation in a magnetically insulated vacuum diode

S. C. Luckhardt and H. H. Fleischmann

Appl. Phys. Lett. 30, 182 (1977); http://dx.doi.org/10.1063/1.89343 (4 pages) | Cited 17 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The insulation and ion generation characteristics of coaxial magnetically insulated diodes were tested using microsecond voltage pulses from a Marx generator with magnetic fields ranging up to 20 kG, voltages of 150–300 kV, and gap widths of 0.3–0.9 cm. Voltage standoff was observed for up to 4 μsec when using graphite or metallic electrodes. With plasma‐producing nylon filament anodes, high‐energy ion beam pulse lengths of up to 2 μsec and total charge generation densities of up to 7.5 μA sec/cm2 were obtained.
Show PACS
52.75.-d Plasma devices
52.50.Dg Plasma sources
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Isotope enrichment in sputter deposits

G. K. Wehner

Appl. Phys. Lett. 30, 185 (1977); http://dx.doi.org/10.1063/1.89344 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The isotope ratio in metal deposits obtained by sputtering a flat target at low ion energy (100 eV) under normal ion incidence is a function of the ejection angle. The lighter isotope (s) are enriched in the direction normal to the target surface as result of ’’reflective collisions’’ which occur when an atom collides with one of heavier mass underneath. Experimental results are presented for Cu(63‐65) and the seven Mo isotopes.
Show PACS
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
28.60.+s Isotope separation and enrichment
34.50.-s Scattering of atoms and molecules

A protuberant shock wave driven by laser‐produced fast ions

H. Azechi, Y. Sakagami, T. Yamanaka, and C. Yamanaka

Appl. Phys. Lett. 30, 187 (1977); http://dx.doi.org/10.1063/1.89345 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
In ambient atmosphere, a protuberant shock wave driven by laser‐produced fast ions was observed by time‐resolved photographs with 5‐μm and 30‐psec resolutions. This protuberant shock wave appeared only when the incident laser intensity exceeded 5×1013 W/cm2. At this intensity, the fast ions were observed using the charge collectors.
Show PACS
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Effect of second‐phase precipitates and deposition temperature on the hysteretic losses in CVD‐prepared Nb3Ge 

J. D. Thompson, M. P. Maley, and L. R. Newkirk

Appl. Phys. Lett. 30, 190 (1977); http://dx.doi.org/10.1063/1.89346 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Hysteretic losses have been measured on a large number of Nb3Ge samples prepared by the chemical vapor deposition process. These measurements were performed as a function of induced current and temperature on samples which contained differing amounts of second‐phase material, Nb5Ge3. It was found that very low 50‐Hz losses, on the order of 20 μW/cm2 at 500 rms A/cm and at temperatures of up to 12 K, could be attained in as‐deposited material. An apparent correlation between the critical current density and the Nb5Ge3 content was observed, which suggested that enhanced pinning due to the second‐phase precipitates was responsible for these low losses.
Show PACS
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

Electron‐beam‐controlled discharge excitation of a CO‐C2H2 energy transfer laser

L. Y. Nelson, C. H. Fisher, S. J. Hoverson, S. R. Byron, F. O’Neill, and W. T. Whitney

Appl. Phys. Lett. 30, 192 (1977); http://dx.doi.org/10.1063/1.89331 (4 pages) | Cited 3 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Laser emission in the 8‐μm ν2‐ν5 band of C2H2 has been observed in electron‐beam‐controlled discharges in CO‐C2H2 mixtures. Line tunability within the P and Q branches has been demonstrated using a grating‐controlled cavity. Spectroscopic measurements of the free‐running C2H2 laser emission at pressures up to 4 atm indicate significant pressure‐broadened line overlap of the closely spaced (<0.2 cm−1) Q‐branch lines.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Pulsed H2‐F2 laser flame‐out

J. A. Woodroffe and R. Limpaecher

Appl. Phys. Lett. 30, 195 (1977); http://dx.doi.org/10.1063/1.89332 (2 pages)

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Flame‐out has been achieved under conditions representative of an atmospheric‐pressure repetitively pulsed H2‐F2 laser by briefly interrupting the flow of H2 between pulses using a fluidic bistable amplifier.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.33.Vx Reactions in flames, combustion, and explosions

Electrode‐ and preionizer‐geometry effects on TEA laser discharge formation

L. J. Denes and Laurence E. Kline

Appl. Phys. Lett. 30, 197 (1977); http://dx.doi.org/10.1063/1.89333 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We show that both the shape of the electrodes and the spatial distribution of the preionization can play an important role in defining the cross‐sectional shape of uv‐preionized self‐sustained glow discharges in CO2 laser mixtures. Studies of a homogeneous 10×10×100 cm3 discharge are described.
Show PACS
52.80.Hc Glow; corona
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Mixing of N2 laser and dye laser pulses in ADP to generate difference frequency tunable from 0.68 to 1.1 μm

C. L. Sam and M. M. Choy

Appl. Phys. Lett. 30, 199 (1977); http://dx.doi.org/10.1063/1.89334 (3 pages)

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
This paper reports the first direct application of a nitrogen laser as a frequency mixing component in a parametric experiment. Tunable infrared radiation from 0.68 to 1.1 μm is generated by mixing N2 laser and dye laser pulses in ADP. The experimental tuning curve is in good agreement with theory. A peak signal power of 1 W is obtained over an interaction length of 1.1 cm with 7 kW of N2 laser and 5 kW of dye laser power. The signal bandwidth is consistent with those of the input beams. Possible extensions of the tuning range are discussed.
Show PACS
42.65.-k Nonlinear optics
42.62.-b Laser applications
42.70.-a Optical materials

Feedback stabilization of optically levitated particles

A. Ashkin and J. M. Dziedzic

Appl. Phys. Lett. 30, 202 (1977); http://dx.doi.org/10.1063/1.89335 (3 pages) | Cited 38 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We demonstrate the locking of an optically levitated sphere to an external reference using an electronic feedback system. This provides a new external source of damping for the stabilization and manipulation of particles in vacuum and at atmospheric pressure. The method permits accurate and continuous monitoring of applied forces. Numerous applications are suggested.
Show PACS
42.79.-e Optical elements, devices, and systems
42.60.-v Laser optical systems: design and operation
06.60.Sx Positioning and alignment; manipulating, remote handling

Transferred‐electron effects in n‐GaAs under hydrostatic pressure

W. Czubatyj and M. P. Shaw

Appl. Phys. Lett. 30, 205 (1977); http://dx.doi.org/10.1063/1.89336 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Experimental results show that the peak velocity, peak electric field, and saturated velocity of the velocity–electric‐field curve for n‐GaAs all increase substantially with increasing hydrostatic pressure up to about 10 kbar; the peak velocity and field then begin decreasing with further increase in pressure. The extraction of the data from the current‐voltage characteristics is based on an exploitation of the influence of the boundary conditions on the manifestation of transferred‐electron‐induced (Gunn) current instabilities.
Show PACS
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors

The effect of reabsorbed radiation on the minority‐carrier diffusion length in GaAs

M. Ettenberg

Appl. Phys. Lett. 30, 207 (1977); http://dx.doi.org/10.1063/1.89337 (4 pages) | Cited 20 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Reported in this paper are the first experiments designed to separate the effects of reabsorbed recombination radiation (RRR) and diffusing minority carriers on the measured minority‐carrier diffusion length. From light spot scan experiments on bevelled samples of p‐type Ge‐doped GaAs it was found that for p‐layer thicknesses up to two diffusion lengths (10–20 μm) carriers created by RRR represent less than 10% of the total carriers diffusing from a generating source (illumination of p‐n junction injection). Thus for measurements and structures of interest carriers created by RRR play no substantial role.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
78.20.-e Optical properties of bulk materials and thin films

Low‐capacitance PbTe photodiodes

H. Holloway and K. F. Yeung

Appl. Phys. Lett. 30, 210 (1977); http://dx.doi.org/10.1063/1.89338 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Thin‐film PbTe photodiodes have been operated at 80 K with significantly reduced capacitance. The technique is based upon limitation of the voltage‐induced change of the depletion‐layer volume by the presence of an insulating substrate. Capacitances as low as 64 pF for a 9‐mil‐square diode and 35 pF for a 28‐mil‐square diode have been achieved with retention of background‐limited detectivities, which were typically about 1.7×1011 cm Hz1/2 W−1 for peak wavelength near 5 μm.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices

Nuclear‐orientation techniques for achieving directed radiations from grasers

G. V. H. Wilson

Appl. Phys. Lett. 30, 213 (1977); http://dx.doi.org/10.1063/1.89339 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The advantages of exploiting the anisotropic γ radiations from oriented nuclei in the development of grasers are pointed out. Nuclear orientation may be achieved by either static or dynamic means. Some simple techniques for switching the direction of nuclear polarization and hence of the radiation emission are summarized.
Show PACS
07.85.-m X- and γ-ray instruments
42.60.-v Laser optical systems: design and operation
76.80.+y Mössbauer effect; other γ-ray spectroscopy
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close