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1 Mar 1977

Volume 30, Issue 5, pp. 217-254


The electrical properties of stacking faults and precipitates in heat‐treated dislocation‐free Czochralski silicon

L. C. Kimerling, H. J. Leamy, and J. R. Patel

Appl. Phys. Lett. 30, 217 (1977); http://dx.doi.org/10.1063/1.89355 (3 pages) | Cited 48 times

Online Publication Date: 26 August 2008

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We have studied the electrical properties of dislocations, stacking faults, and precipitates produced during 1200 °C aging of crucible‐grown silicon. The defects were examined by SEM in the charge collection mode, at temperatures from 77 to 300 °K. Undecorated Frank extrinsic stacking faults exhibit defect energy levels in the upper half of the gap (∼Ec−0.1 eV). The partial dislocations bounding these faults possess energy levels lower than Ec−0.3 eV. Finally, precipitates are observed to act as microplasma sites at low (T<300 °K) temperatures.
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72.80.Cw Elemental semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.Nn Stacking faults and other planar or extended defects

SAW reflection and bulk‐wave loss characteristics of a groove reflector grating

H. S. Tuan and J. P. Parekh

Appl. Phys. Lett. 30, 220 (1977); http://dx.doi.org/10.1063/1.89356 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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The reflection and bulk‐wave loss characteristics of a SAW reflector grating comprised of shallow grooves are treated using the coupled‐mode approach well known in the area of optical gratings. This approach offers the following distinct advantages over the previously reported equivalent network approach: (i) it derives the grating characteristics directly in terms of the material constants of the substrate; (ii) it provides quantitative information on the power loss resulting from bulk‐wave radiation; and (iii) it can accommodate changes in groove profile or height among the individual grating elements, making this approach amenable for use in the design of tapered arrays. Computed reflection and bulk‐wave loss characteristics of a grating comprised of a varying number of identical trapezoidal grooves are presented.
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43.58.+z Acoustical measurements and instrumentation
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Gaussian beam stabilization in a long absorptive plasma column

S. Y. Yuen

Appl. Phys. Lett. 30, 223 (1977); http://dx.doi.org/10.1063/1.89357 (2 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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The behavior of a Gaussian laser beam propagating in a long absorptive plasma column is studied theoretically. The plasma is represented by a complex refractive index which varies quadratically with transverse position. With an absorption loss which is minimum at the axis, the width of the Gaussian beam will converge at large propagational distance to a constant which depends on the plasma characteristics alone. It is found that stable propagation of a Gaussian beam is obtained without requiring that the transverse variation of the real part of the refractive index be favorable to beam trapping.
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52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.40.Fd Plasma interactions with antennas; plasma-filled waveguides
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Chirped‐grating output couplers in dielectric waveguides

A. Katzir, A. C. Livanos, and A. Yariv

Appl. Phys. Lett. 30, 225 (1977); http://dx.doi.org/10.1063/1.89358 (2 pages) | Cited 14 times

Online Publication Date: 26 August 2008

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This paper reports on the method of fabrication and first experiments of chirped (variable period) gratings in a dielectric waveguide. Such gratings, which are proposed as a new optical building block, are used in this work as focusing output couplers.
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84.40.Az Waveguides, transmission lines, striplines
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Dj Gratings

Leaky modes effect in spliced graded‐index fibers

Kenichi Kitayama and Masahiro Ikeda

Appl. Phys. Lett. 30, 227 (1977); http://dx.doi.org/10.1063/1.89359 (2 pages)

Online Publication Date: 26 August 2008

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In graded‐index and step‐index fibers, splicing loss was measured under the condition that all the guided modes are equally excited by light‐emitting diodes. Measurements were made both for short and long fibers. For a short fiber, the graded‐index fiber has a larger splicing tolerance to misalignment than the step‐index fiber; while for a long fiber the former was somewhat more sensitive than the latter. This difference can be interpreted as showing that leaky modes, excited by transverse displacement in graded‐index fibers, affect transmission loss.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

A demonstration of one‐atom detection

G. S. Hurst, M. H. Nayfeh, and J. P. Young

Appl. Phys. Lett. 30, 229 (1977); http://dx.doi.org/10.1063/1.89360 (3 pages) | Cited 70 times

Online Publication Date: 26 August 2008

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Resonance ionization spectroscopy, a photoionization method in which all of a given quantum selected species are converted to ion pairs, has been used to develop a detector for a single atom. We have demonstrated the detection of one atom by using a pulsed dye laser to photoionize Cs to saturation and a proportional counter for the detection of single electrons. Some current applications, e.g., the slow transport and chemical reactions of atoms, are briefly discussed. Future applications may include the detection of rare events such as quarks, solar neutrinos, and superheavy elements.
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32.10.Bi Atomic masses, mass spectra, abundances, and isotopes
32.80.Fb Photoionization of atoms and ions
82.50.Hp Processes caused by visible and UV light

A chirping laser for photochemical applications

B. Steverding

Appl. Phys. Lett. 30, 231 (1977); http://dx.doi.org/10.1063/1.89361 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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The efficiency increase of photochemical reactions by a chirping laser is discussed. The optimal detuning rate is calculated for constant intensity pulses and for pulses with linear rise. Calculating a particular example for BCl3, it is shown that photochemical efficiency can be increased by an order of magnitude.
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82.50.Hp Processes caused by visible and UV light
82.50.-m Photochemistry
42.60.-v Laser optical systems: design and operation

A discharge‐pumped ArCl superfluorescent laser at 175.0 nm

Ronald W. Waynant

Appl. Phys. Lett. 30, 234 (1977); http://dx.doi.org/10.1063/1.89362 (2 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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Initial observations have been made of laser action in ArCl excimers pumped by a high‐voltage fast‐rise‐time Blumlein discharge circuit. The new laser emits at 175.0 nm and operates at atmospheric pressure. The gas from which the molecules are formed consists of 1% Cl2, 15% Ar, and 84% He. A gain coefficient of 0.012 cm−1 has been determined for ArCl.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.50.Hp Processes caused by visible and UV light
52.80.Pi High-frequency and RF discharges

Aerosol sizing by means of laser‐induced fluorescence

R. dos Santos and W. H. Stevenson

Appl. Phys. Lett. 30, 236 (1977); http://dx.doi.org/10.1063/1.89347 (2 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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A technique for accurately measuring in situ the size distribution of liquid aerosols is described. The method is based on the measurement of signal modulation when fluorescent particles cross the probe volume of a real fringe laser velocimeter. This provides an exact measurement of droplet diameter free from the errors associated with a similar scattered light technique.
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82.70.Rr Aerosols and foams
47.55.Kf Particle-laden flows
42.60.-v Laser optical systems: design and operation

High optical power capabilities of Ti‐diffused LiTaO3 waveguide modulator structures

G. L. Tangonan, M. K. Barnoski, J. F. Lotspeich, and A. Lee

Appl. Phys. Lett. 30, 238 (1977); http://dx.doi.org/10.1063/1.89348 (2 pages) | Cited 38 times

Online Publication Date: 26 August 2008

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Studies of high optical power density propagation in Ti‐diffused LiTaO3 waveguides are described. Optical damage at room temperature involving ’’blow‐out’’ of the central output spot into the m line and clean‐up phenomena have been observed. Studies at elevated temperature (≈150 °C) indicate that self‐annealing of the damage allows these structures to sustain optical power densities up to 11 kW/cm2 at 5145 Å without damage and power saturation. Use of high‐purity LiTaO3 is required if room‐temperature operation at these high optical power densities is to be achieved.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

A superconducting strain transducer

L. Adami, M. Cerdonio, F. F. Ricci, and G. L. Romani

Appl. Phys. Lett. 30, 240 (1977); http://dx.doi.org/10.1063/1.89349 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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We have developed a prototype of a novel strain transducer. The change in magnetic reluctance in a ferromagnetic thorus with a gap due to the applied strain is detected by a superconducting magnetometer (SQUID). Strains as small as Δl/l=10−10 have been detected on a bandwidth of 1 Hz up to 16.7 kHz in a reduced sensitivity version of the apparatus. Further experimentation at higher sensitivity with the present experimental setup is prevented by the background mechanical noise of the building.
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85.25.-j Superconducting devices
07.07.Mp Transducers
04.80.-y Experimental studies of gravity

Velocity‐field characteristics of Ga1−xInxP1−yAsy quaternary alloys

M. A. Littlejohn, J. R. Hauser, and T. H. Glisson

Appl. Phys. Lett. 30, 242 (1977); http://dx.doi.org/10.1063/1.89350 (3 pages) | Cited 80 times

Online Publication Date: 26 August 2008

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The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.
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72.20.Fr Low-field transport and mobility; piezoresistance
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Dp General theory, scattering mechanisms
85.30.Tv Field effect devices

Hot‐electron diffusion noise in n‐silicon using a radiometric method in the X‐band region

J. Zimmermann, S. Bonfils, Y. Leroy, and E. Constant

Appl. Phys. Lett. 30, 245 (1977); http://dx.doi.org/10.1063/1.89351 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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A radiometric method for the measurement of the diffusion noise in homogeneous semiconductors is presented. The work has been carried out on epitaxies silicon n+n n+ at room temperature, the electric field applied (1⩽E⩽70 kV/cm) being along the 〈111〉 direction. The results are in close agreement with those computed through the impedance field method with the high field diffusion coefficient values obtained by Canali who had used the time‐of‐flight technique.
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72.20.Ht High-field and nonlinear effects
72.30.+q High-frequency effects; plasma effects
85.30.De Semiconductor-device characterization, design, and modeling

Evidence for low surface recombination velocity on n‐type InP

H. C. Casey and E. Buehler

Appl. Phys. Lett. 30, 247 (1977); http://dx.doi.org/10.1063/1.89352 (3 pages) | Cited 109 times

Online Publication Date: 26 August 2008

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A comparison was made of the photoluminescent (PL) intensities of n‐type InP and GaAs at room temperature. The PL intensity for InP was over 100 times greater than for comparably doped GaAs. The effect of surface recombination velocity S on the PL intensity was evaluated numerically. When this evaluation is applied to the PL intensity ratios of n‐type InP and GaAs it shows that S for n‐type InP is sufficiently small to eliminate significant influence of nonradiative surface recombination on the observed PL intensity.
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78.40.Fy Semiconductors
73.20.-r Electron states at surfaces and interfaces

Visible GaAs0.7P0.3 cw heterojunction lasers

H. Kressel, G. H. Olsen, and C. J. Nuese

Appl. Phys. Lett. 30, 249 (1977); http://dx.doi.org/10.1063/1.89353 (3 pages) | Cited 13 times

Online Publication Date: 26 August 2008

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Vapor‐grown heteroepitaxial structures of GaAs0.7P0.3/In0.34Ga0.66P have been fabricated into double‐heterojunction laser diodes with room‐temperature threshold current densities as low as 3400 A/cm2 at λL≃7000 Å. This value is about three times less than the best reported for (Al,Ga)As lasers at this wavelength. From the (Ga,As)P/(In,Ga)P lattice‐matched structures, cw operation at 10 °C has been achieved.
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42.55.Px Semiconductor lasers; laser diodes

Photoacoustic determination of absolute optical absorption coefficient

Grover C. Wetsel and F. Alan McDonald

Appl. Phys. Lett. 30, 252 (1977); http://dx.doi.org/10.1063/1.89354 (3 pages) | Cited 45 times

Online Publication Date: 26 August 2008

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We propose and demonstrate that the photoacoustic effect can be used for absolute determination of the optical absorption coefficient. The photoacoustic signal is measured as a function of chopping frequency and compared to the theory of the photoacoustic effect. The essential agreement of theory and experiment over a restricted frequency makes possible the determination of the optical absorption coefficient (to within 10% in a test case). Observation of a characteristic leveling off of the photoacoustic signal at low frequencies for several materials is also reported.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
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