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15 Mar 1977

Volume 30, Issue 6, pp. 255-305


Surface stress and the equilibrium shape of an elastic crystal

R. S. Dunham and M. E. Gurtin

Appl. Phys. Lett. 30, 255 (1977); http://dx.doi.org/10.1063/1.89371 (2 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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We consider the deformation, due to surface stress, of an elastic crystal in the shape of a square. We reduce the problem to one of linear elasticity and obtain a solution using the finite‐element method.
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68.35.Md Surface thermodynamics, surface energies
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

20‐MHz acoustic waves from pulsed thermoelastic expansions of constrained surfaces

R. J. von Gutfeld and R. L. Melcher

Appl. Phys. Lett. 30, 257 (1977); http://dx.doi.org/10.1063/1.89375 (3 pages) | Cited 60 times

Online Publication Date: 26 August 2008

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Repetitive pulses from lasers with pulse widths 5–10 nsec or a current generator with 10–25‐nsec widths have been used to launch acoustic waves by thermoelastic expansions. For the laser case, when transparent media such as quartz plates are used to acoustically constrain the energy absorbing surface, an increase of up to 46 dB at 20 MHz was observed over that generated from a free surface. An experiment using a scannable laser to generate elastic waves for flaw detection in a metallic sample is described.
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65.40.De Thermal expansion; thermomechanical effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
79.20.Ds Laser-beam impact phenomena
46.80.+j Measurement methods and techniques in continuum mechanics of solids

Direct measurement of broad spectral electromagnetic wave energy generated by an intense relativstic electron beam

P. C. Efthimion and S. P. Schlesinger

Appl. Phys. Lett. 30, 259 (1977); http://dx.doi.org/10.1063/1.89376 (3 pages)

Online Publication Date: 26 August 2008

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A direct determination is made of the total power radiated in a single pulse, F P (ω)  dω, by an intense relativistic electron beam cyclotron maser configuration as a function of applied magnetic field. The existence of other possible instabilities over a broad spectral range notwithstanding, the total output is dominated by the maser instability occurring at the relativistic cyclotron resonance magnetic field. The results for two different anode‐cathode spacings, corresponding qualitatively to cold and warm beam conditions, are presented and compared. A possible explanation accounting for the existence of high power noise radiation at low magnetic fields for the warm beam case is discussed.
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41.75.Fr Electron and positron beams
52.70.Gw Radio-frequency and microwave measurements
07.20.Fw Calorimeters
52.40.Fd Plasma interactions with antennas; plasma-filled waveguides

Attenuation of 10.6‐μm beams by electrically initiated laser driven plasmas

Paul Weiss

Appl. Phys. Lett. 30, 261 (1977); http://dx.doi.org/10.1063/1.89377 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Measurements have been made of the attenuation of radiation of λ=10.6 μm by a plasma initiated by an electrical spark in air. The light transmission varied from <2% to ≳10% as the input laser energy ranged from 300 mJ to < 0.1 mJ. These results indicate that the spark‐initiated plasma acted as a seed plasma for the laser. The trend of increasing attenuation with increasing incident laser energy is promising for use as an isolator in high‐power laser systems.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Detection of 10‐μ radiation with point‐contact Schottky diodes

Dah‐wen Tsang and S. E. Schwarz

Appl. Phys. Lett. 30, 263 (1977); http://dx.doi.org/10.1063/1.89378 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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Point‐contact Schottky diodes have been used to detect 10.6‐μ radiation. Best results were obtained with n‐Ge/W contacts. These gave voltage responsivity about an order of magnitude larger than typical metal‐oxide‐metal point contacts under zero‐bias conditions, although with higher source impedance.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Hi Surface barrier, boundary, and point contact devices
84.40.Ba Antennas: theory, components and accessories
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

X‐ray and γ‐ray emission from channeled relativistic electrons and positrons

R. W. Terhune and R. H. Pantell

Appl. Phys. Lett. 30, 265 (1977); http://dx.doi.org/10.1063/1.89379 (4 pages) | Cited 45 times

Online Publication Date: 26 August 2008

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The characteristics of the radiation from channeled relativistic electrons and positrons are discussed and model calculations carried out. Radiation near 2.5 keV associated with transitions etween the 2 p→1s eigenstates of 2‐MeV electrons channeled along the 〈110〉 axis of MgO is predicted with 50 times the usual bremsstrahlung intensity in a 10% bandwidth. Recent low‐energy bremsstrahlung measurements made with 28‐MeV electrons propagating along an axis in silicon are interpreted in terms of this model.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.80.Fe Electron and positron radiation effects
79.20.Kz Other electron-impact emission phenomena

Reduction of ion sputtering yield by special surface microtopography

J. F. Ziegler, J. J. Cuomo, and J. Roth

Appl. Phys. Lett. 30, 268 (1977); http://dx.doi.org/10.1063/1.89380 (4 pages) | Cited 25 times

Online Publication Date: 26 August 2008

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It is demonstrated that by covering a tungsten surface with tungsten needles, the sputtering coefficient for He ions is reduced by a factor of 3 to 100. Also, this metal surface does not blister under He bombardment to doses of 2.8×1019 He/cm2, although a similar polished W surface blisters at 1/30 this dose. Sputtering yields have been determined for both monoenergetic and distributed energy He ion beams, and the angular distribution of sputtered ions is reported.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Formation of integrated optics components by multiphoton photorefractive processes

C. M. Verber, N. F. Hartman, and A. M. Glass

Appl. Phys. Lett. 30, 272 (1977); http://dx.doi.org/10.1063/1.89363 (2 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Phase holograms have been formed in pure outdiffused LiNbO3 waveguides using the photorefractive effect initiated by two‐photon absorption. Efficient holograms were recorded with two guided waves, of less than 100 W peak power, and less than 10 μJ optical energy. This technique automatically compensates for wave front perturbations in the guide and allows the formation of various integrated components such as wavelength multiplexers and optical switches.
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42.82.-m Integrated optics
42.40.Ht Hologram recording and readout methods
42.70.Gi Light-sensitive materials
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Scanning ESCA: A new dimension for electron spectroscopy

C. T. Hovland

Appl. Phys. Lett. 30, 274 (1977); http://dx.doi.org/10.1063/1.89364 (2 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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Experiments have been conducted to determine the feasibility of the theoretical experiment set forth by Cazaux. The experiment consists of electron bombarding a thin foil of aluminum with a thin specimen mounted on the opposite side. A focused scanning electron beam is used to bombard the aluminum substrate to produce a localized source of AlKα x rays. This focused Al x‐ray (hν=1.4 keV) source creates a spatially localized source of photoelectrons in the specimen. The photoelectrons are separated in energy with a cylindrical mirror spectrometer to produce an ESCA spectrum from an area of less than 20 μm in diameter. Two‐dimensional ESCA images have been obtained by this method utilizing intensity variations in the amplitude of a selected photoelectron peak to intensity modulate a cathode ray tube monitor as the electron beam is scanned.
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Electric‐field‐induced optical rectification in nitrobenzene

J. F. Ward and J. K. Guha

Appl. Phys. Lett. 30, 276 (1977); http://dx.doi.org/10.1063/1.89365 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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The first observation of dc‐electric‐field‐induced$optical rectification is eported. In this process a dc polarization is produced in a medium (in this case nitrobenzene) by the simultaneous presence of dc and optical electric fields. The relation between this process and the Kerr effect is found to be consistent with that predicted by permutation symmetry. A bolometerlike response also seen in these experiments is discussed.
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42.65.-k Nonlinear optics
78.20.Jq Electro-optical effects

Diffraction‐limited KrF and XeF lasers with a negative‐branch unstable resonator

T. J. McKee, B. P. Stoicheff, and Stephen C. Wallace

Appl. Phys. Lett. 30, 278 (1977); http://dx.doi.org/10.1063/1.89366 (3 pages) | Cited 16 times

Online Publication Date: 26 August 2008

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Diffraction‐limited performance has been achieved in discharge‐excited KrF and XeF lasers by using an unstable resonator configuration. A peak power of 5 MW (50 mJ) was produced from a Blumlein circuit with stored energy of only 5 J.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A bistable Fabry‐Perot resonator

P. W. Smith and E. H. Turner

Appl. Phys. Lett. 30, 280 (1977); http://dx.doi.org/10.1063/1.89367 (2 pages) | Cited 52 times

Online Publication Date: 26 August 2008

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We propose and demonstrate the operation of a novel bistable optical device that exhibits differential gain and can function as an optical switch, limiter, or optical memory element.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Hp Optical processors, correlators, and modulators

Optical bistability and differential gain between 85 and 296 °K in a Fabry‐Perot containing ruby

T. N. C. Venkatesan and S. L. McCall

Appl. Phys. Lett. 30, 282 (1977); http://dx.doi.org/10.1063/1.89368 (3 pages) | Cited 51 times

Online Publication Date: 26 August 2008

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Bistability, differential gain, discriminator, clipper, and limier actions were observed using a plano‐concave Fabry‐Perot cavity containing ruby. Input powers were approximately 20 mW from a cw ruby laser. Operation wa anticipated near 77 °K where the R1 transition was nearly resonant with the laser. However, the device functioned at room temperature. The refractive index of ruby depends on the fractional ground‐state population. Driving the R lines leads to a nonlinear refractive index due to dispersive contributions from nonresonant pump and charge‐transfer bands, which explains the room‐temperature operation.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Hp Optical processors, correlators, and modulators
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Caustics associated with fiber drawing

P. G. Simpkins, T. D. Dudderar, J. McKenna, and J. B. Seery

Appl. Phys. Lett. 30, 284 (1977); http://dx.doi.org/10.1063/1.89369 (4 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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The formation of caustics in the solidified drawdown zone of samples taken from a laser furnace during the manufacture of fused silica fibers is described. Observations using collimated monochromatic light to axially illuminate the drawdown zone are compared with predictions from ray‐tracing algorithms. Variations in the caustic images are shown to be manifestations of changes in the drawdown profile. The agreement between the observed and calculated far‐field caustic trajectories is very good.
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42.15.Dp Wave fronts and ray tracing
42.25.Gy Edge and boundary effects; reflection and refraction
07.60.Hv Refractometers and reflectometers
42.81.-i Fiber optics

XeF∗ (C1/2) radiative lifetime measurement

J. Gary Eden and Stuart K. Searles

Appl. Phys. Lett. 30, 287 (1977); http://dx.doi.org/10.1063/1.89370 (4 pages) | Cited 28 times

Online Publication Date: 26 August 2008

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By monitoring the spontaneous emission from electron‐beam‐excited xenon difluoride (XeF2) plasmas, the radiative lifetime of XeF∗ [C (1/2)] has been determined. Excited XeF was formed directly through electron‐impact dissociative excitation of XeF2. The time behavior of the subsequent 351‐nm fluorescence displayed two distinct exponential decay regions. The first was characterized by a pressure‐independent decay constant of 16.5±5 ns, the radiative lifetime of XeF∗ [C (1/2)]. The time constant of the second region was linearly dependent on XeF2 pressure, indicating that C‐state XeF molecules are, in the late afterglow, formed by a two‐body collision process exhibiting a large rate constant (∼3×10−10 cm3 sec−1).
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31.50.Df Potential energy surfaces for excited electronic states
34.80.Gs Molecular excitation and ionization
82.20.Pm Rate constants, reaction cross sections, and activation energies

Viscous flow of thermal SiO2 

E. P. EerNisse

Appl. Phys. Lett. 30, 290 (1977); http://dx.doi.org/10.1063/1.89372 (4 pages) | Cited 137 times

Online Publication Date: 26 August 2008

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Wafer curvature measurements from 25 to 1075 °C are used to demonstrate viscous flow of thermally grown SiO2 at temperatures as low as 960 °C. Both O2‐ and steam‐grown oxides are examined and found to have viscosities similar to synthetic fused silica. It is recommended that high‐temperature Si device processing involving SiO2 be held to below 960 or even 925 °C, after oxide growth to avoid viscous flow and the accompanying structural damage in the oxide. This recommendation holds particularly for device technologies where resistance to ionizing radiation is important. The measurements also demonstrate that gross structural damage resides in the Si beneath steam‐grown oxide.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
46.35.+z Viscoelasticity, plasticity, viscoplasticity
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition

W. T. Tsang and A. Y. Cho

Appl. Phys. Lett. 30, 293 (1977); http://dx.doi.org/10.1063/1.89373 (4 pages) | Cited 69 times

Online Publication Date: 26 August 2008

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In this paper, studies of the molecular beam epitaxy (MBE) of GaAs‐Ga1−xAlxAs multilayer structures over preferentially etched channels on GaAs substrates are described. It is found that the growth characteristics with MBE are entirely different from those obtained from similar experiments when LPE is used. Results obtained indicate that this etch‐and‐fill technique using MBE as the growth process should be particularly useful in fabricating injection lasers, laser arrays, and integrated optics components which require planar definition.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.82.-m Integrated optics

Enhanced degradation and deep‐level formation at dislocations in GaAs0.6P0.4 LED’s

S. Metz

Appl. Phys. Lett. 30, 296 (1977); http://dx.doi.org/10.1063/1.89374 (2 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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Spatially resolved measurements of the red (1.9 eV) and infrared (1.27 eV) luminescence, resulting from near‐edge and deep‐level recombinations, respectively, are presented. The samples are excited by current injection at 300 K and measured before and after a period of stressed operation. An enhanced degradation is observed at distinct lines running parallel to 〈110〉 directions which is combined just there with an increasing density of the deep‐level recombination centers.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.40.Fy Semiconductors

Parametric amplification in arrays of Josephson tunnel junctions

S. Wahlsten, S. Rudner, and T. Claeson

Appl. Phys. Lett. 30, 298 (1977); http://dx.doi.org/10.1063/1.89381 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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Arrays of 30 series‐connected unbiased small Josephson tunnel junctions give parametric amplification at 10 GHz. A pump power of 10−8 W was required and gains of up to 24 dB were achieved. The gain was constant for a large range of signal power, up to a signal output power of 10 dB below the pump power. A maximum brightness temperature of 1.7×106 K, in a bandwidth of 12 MHz, was deduced from variations of the gain with input noise level.
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85.25.-j Superconducting devices
84.40.Dc Microwave circuits
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
74.50.+r Tunneling phenomena; Josephson effects

Effects of ion‐implanted atoms upon conduction electron spin resonance (CESR) in a Si : P system

K. Murakami, K. Masuda, K. Gamo, and S. Namba

Appl. Phys. Lett. 30, 300 (1977); http://dx.doi.org/10.1063/1.89382 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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The behavior of the conduction electron spin resonance of ion‐implanted (Si : P)  : Sb and (Si : P)  : Te systems is observed to be strongly modified by the presence of Sb or Te substitutional atoms in shallower surface layers; i.e., the ESR signal shows an anomalous line broadening. The origin of the anomalous broadening may be due to the spin‐orbit interaction between the conduction electrons contained within a thin layer (⩽25 μm) and implanted Sb or Te impurities contained within a thin layer (.=.0.1 μm).
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76.30.Pk Conduction electrons
61.80.Jh Ion radiation effects
76.30.Da Ions and impurities: general

Magnetic bubble and stripe domain wall velocity in amorphous GdCoMo films

D. Hafner and F. B. Humphrey

Appl. Phys. Lett. 30, 303 (1977); http://dx.doi.org/10.1063/1.89383 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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The free bubble domain wall radial velocity and mobility in GdCoMo sputtered amorphous films has been measured and compared to stripe wall motion in the same sample. A sampling optical microscope with a sampling time of 10 nsec and a single exposure electronic recording TV system was used to observe the transient bubble size and stripe width. Wall velocities up to 400 m/sec were observed for applied fields up to 350 Oe. The velocity for some samples was linear with respect to drive although nonlinear behavior was also observed as well as domain distortion on the very temperature‐sensitive samples. For the linear samples, a mobility of 1.95 m/sec Oe was measured in the effective drive field range 0–200 Oe.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.50.Kj Amorphous and quasicrystalline magnetic materials
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