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1 Apr 1977

Volume 30, Issue 7, pp. 307-360


An accelerometer/velocimeter with a range from 105g to 1010g and a time resolution of a few nanoseconds

R. A. Graham

Appl. Phys. Lett. 30, 307 (1977); http://dx.doi.org/10.1063/1.89401 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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A piezoelectric accelerometer is described which simultaneously measures acceleration and velocity for materials subjected to very rapid impulsive loading. The acceleration signal is derived from a measure of the rate of change of the short‐circuited current of a piezoelectric disk in contact with the accelerated surface. The maximum acceleration which the device can measure is about five orders of magnitude greater than the maximum acceleration capability of conventional accelerometers.
Show PACS
06.30.Gv Velocity, acceleration, and rotation
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.65.-j Piezoelectricity and electromechanical effects
62.50.-p High-pressure effects in solids and liquids

Light sensitivity enhancement of image intensifiers

G. A. Dir, W. E. L. Haas, and J. E. Adams

Appl. Phys. Lett. 30, 309 (1977); http://dx.doi.org/10.1063/1.89402 (2 pages)

Online Publication Date: 26 August 2008

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It was observed that liquid‐crystal–photoconductor reflective light intensifiers, without optical blocking layers, become more sensitive to the imaging light when the irradiance of the actinic read‐out light is increased. Measurements illustrating the effect and an interpretation are presented.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
85.60.-q Optoelectronic devices

The coherent interaction of externally generated 35‐GHz sound with the light in CdS

Sohbe Suzuki, Jun‐ichi Nishizawa, and Ken Suto

Appl. Phys. Lett. 30, 310 (1977); http://dx.doi.org/10.1063/1.89403 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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The first experiment of backward collinear diffraction of light in CdS by 35‐GHz ultrasonic waves is reported.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Gettering of stacking‐fault nuclei in silicon by trichloroethylene oxidation

Takeshi Hattori

Appl. Phys. Lett. 30, 312 (1977); http://dx.doi.org/10.1063/1.89404 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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Stacking‐fault nuclei in silicon wafers are gettered by the incorporation of appropriate amounts of trichloroethylene (TCE) during thermal oxidation at high temperatures. Deliberate introduction of the TCE oxidation prevents the formation of oxidation‐induced stacking faults during the subsequent standard thermal oxidation. Possible mechanisms for the nuclei gettering and the fault suppression are discussed.
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61.72.Nn Stacking faults and other planar or extended defects
81.65.-b Surface treatments

High quantum efficiency photoemission from GaAs1−xPx alloys

J. S. Escher and G. A. Antypas

Appl. Phys. Lett. 30, 314 (1977); http://dx.doi.org/10.1063/1.89405 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Photoemission from GaAs1−xPx alloys activated to negative electron affinity has been studied over the band‐gap range 1.4<Eg (eV) <2.1 (0<x<0.55). Quantum yields up to 50% (electrons/incident photon) have been measured in the visible.
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81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions
85.60.Dw Photodiodes; phototransistors; photoresistors

Pressure dependence of electron temperature using rf‐floated electrostatic probes in rf plasmas

A. Cantin and R. R. J. Gagné

Appl. Phys. Lett. 30, 316 (1977); http://dx.doi.org/10.1063/1.89406 (4 pages) | Cited 25 times

Online Publication Date: 26 August 2008

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A new technique, which eliminates ac between probe and plasma by means of a ’’follower’’, permits electrostatic probes to be used in rf plasmas with a degree of confidence and accuracy which is equal, if not better, to that for a dc discharge. Measurements in argon, using this technique, have shown that electron temperature (Te) in an rf discharge is not higher than in dc discharge. Moreover the values of Te do not agree with von Engel’s law, but are in close agreement with a theory based on free diffusion and extrapolated up to values of pR=20 Torr cm (pressure times tube radius). These results are in contradiction with published electrostatic probe results for a positive column, but agree with published results as determined by microwave radiometry and optical spectroscopy. The hypothesis is made that the supporting evidence in favor of von Engel’s law, afforded by published electrostatic probe results, could be due to an artifact.
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52.70.Ds Electric and magnetic measurements
52.80.Pi High-frequency and RF discharges
52.40.Kh Plasma sheaths

Analysis of plasma‐grown GaAs oxide films

R. L. Kauffman, L. C. Feldman, J. M. Poate, and R. P. H. Chang

Appl. Phys. Lett. 30, 319 (1977); http://dx.doi.org/10.1063/1.89407 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion‐induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.
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68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Dose dependence of residual lattice disorder in ion‐implanted and annealed silicon

C. E. Christodoulides, W. A. Grant, and J. S. Williams

Appl. Phys. Lett. 30, 322 (1977); http://dx.doi.org/10.1063/1.89408 (2 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Significant nonlinear effects have been observed in the dose/disorder relationship for Pb‐implanted Si both before and after annealing. The results suggest that accumulated stresses within the implanted Si layer may play a significant role in recrystallization.
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61.80.Jh Ion radiation effects
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Channeling of boron ions into silicon

D. Lecrosnier, J. Paugam, and J. Gallou

Appl. Phys. Lett. 30, 323 (1977); http://dx.doi.org/10.1063/1.89384 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Channeled and random distributions of boron ions implanted over the energy range 50 keV–1.8 MeV into silicon have been measured using the differential capacitance technique. When implantations are performed along the 〈110〉 or 〈111〉 axis, profiles exhibit a strong orientation dependance. The best channeled profiles shows that more than 70% of the implanted dose is in the channeled peak.
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61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Critical microstructure for ion‐implantation gettering effects in silicon

H. J. Geipel and W. K. Tice

Appl. Phys. Lett. 30, 325 (1977); http://dx.doi.org/10.1063/1.89385 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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The nature of residual ion‐implantation damage responsible for gettering deleterious impurities from active semiconductor device regions in Si has been studied. A propensity for dislocations of the type b=1/2 〈110〉 to gather metallic contaminant (e.g., Cu), as compared to Frank partials b=1/3 〈111〉, is established. Transmission electron microscopy and pulsed leakage measurements are used to demonstrate that the density of 1/2 〈110〉 dislocations introduced by Xe implantation greatly influences gettering efficiency.
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61.80.Jh Ion radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Ion‐implanted silicon profiles in GaAs 

D. H. Lee and R. M. Malbon

Appl. Phys. Lett. 30, 327 (1977); http://dx.doi.org/10.1063/1.89386 (3 pages) | Cited 17 times

Online Publication Date: 26 August 2008

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Depth distribution profiles of silicon impurities implanted at 50 to 500 keV have been measured by secondary‐ion mass spectrometry. The as‐implanted profiles are approximately Gaussian with agreement between experiment and theory better than 10% for the projected ranges Rp and within 20% for the standard deviations ΔRp. Negligible diffusion of a 400‐keV implanted silicon profile is observed after a 800 °C 20‐min anneal in a flowing hydrogen/arsenic atmosphere without dielectric encapsulation.
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61.80.Jh Ion radiation effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Tunable infrared generation by coherent Raman mixing in H2

S. J. Brosnan, R. N. Fleming, R. L. Herbst, and R. L. Byer

Appl. Phys. Lett. 30, 330 (1977); http://dx.doi.org/10.1063/1.89387 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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We have generated continuously tunable infrared output between 3.5 and 13 μm by coherent Raman mixing in H2 gas at 20 atm using a Nd : YAG laser‐pumped LiNbO3 parametric oscillator as the input source. The coherent Raman mixing method offers significant advantages over stimulated Raman scattering for frequency conversion.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Spectroscopic studies in the picosecond domain with synchronously mode‐locked dye lasers

T. R. Royt and Chi H. Lee

Appl. Phys. Lett. 30, 332 (1977); http://dx.doi.org/10.1063/1.89388 (4 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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Synchronous mode locking of two dye lasers was employed to obtain pairs of independently tunable picosecond pulses that were precisely synchronized in time. Overlapped pulses in strontium vapor were used to generate tunable picosecond pulses in the vacuum uv. The tunability was employed to study resonant enhancement of a four‐wave parametric process by the 4d6p autoionizing resonance. Mutually separated pulses were employed to measure the build‐up and decay of coherence for a two‐quantum excited state. The decay was found to be faster than theoretical predictions that assume only velocity dephasing.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Mv Dye lasers
32.80.Zb Autoionization

Optical coupling modulation in traveling‐wave cavities

D. M. Henderson and V. A. Vilnrotter

Appl. Phys. Lett. 30, 335 (1977); http://dx.doi.org/10.1063/1.89389 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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Efficient very wideband coupling modulation of the CO2 laser has been achieved in a traveling‐wave cavity configuration termed ’’ring modulator’’ that avoids the usual transit‐time‐limited bandwidth of conventional coupling modulation. A 10.6‐μm modulation experiment demonstrates flat frequency response from 10 MHz to 1 GHz.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Infrared laser spectroscopy of molecular beams

T. E. Gough, R. E. Miller, and G. Scoles

Appl. Phys. Lett. 30, 338 (1977); http://dx.doi.org/10.1063/1.89390 (3 pages) | Cited 175 times

Online Publication Date: 26 August 2008

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A new technique suitable for infrared laser spectroscopy of molecular beams is presented and tested. The metod is based on the detection of the power absorbed, as a modulated increase of power carried by the molecules to a microcalorimeter (a cryogenic bolometer), after the molecular beam has been crossed with the modulated output of a semiconductor diode laser. Sensitivity, resolution, and possible applications are briefly discussed.
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33.20.Ea Infrared spectra
34.50.Lf Chemical reactions
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

A time‐dispersion‐tuned fiber Raman oscillator

R. H. Stolen, Chinlon Lin, and R. K. Jain

Appl. Phys. Lett. 30, 340 (1977); http://dx.doi.org/10.1063/1.89391 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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By using a novel time‐dispersion‐tuning scheme a fiber Raman oscillator pumped by a mode‐locked argon laser has been tuned within the broad Raman gain bandwidth (∼400 cm−1) of silica glass by varying the resonator length. A tuning range of 40 Å in the green is obtained with an average pump power of 1.6 W. A combination of time dispersion and prism tuning extends this range to 134 Å (5153–5287 Å). Tunable Raman oscillation with lower threshold in the 1‐μ region should be possible with a mode‐locked Nd : YAG laser pump.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.-i Fiber optics

Experiment with a cw N2O gasdynamic laser and its qualitative comparison with a CO2 laser

J. Milewski, M. Brunné, M. Irczuk, J. Stańco, A. Zieliński, G. Rabczuk, A. I. Demin, E. M. Kudriavtsev, A. Yu. Volkov, and N. N. Sobolev

Appl. Phys. Lett. 30, 342 (1977); http://dx.doi.org/10.1063/1.89392 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Preliminary experimental data concerning an N2O/N2 thermally excited and selectively pumped mixing cw gasdynamic laser are reported and compared with those concerning a CO2/N2 laser operating at similar conditions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Picogram detection of cesium in aqueous solution by nonflame atomic fluorescence spectroscopy with dye laser excitation

J. P. Hohimer and P. J. Hargis

Appl. Phys. Lett. 30, 344 (1977); http://dx.doi.org/10.1063/1.89393 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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The determination of trace cesium in aqueous solution by nonflame atomic fluorescence spectroscopy using dye laser excitation is reported. Using a nonflame atomization system and direct‐line fluorescence detection, the limit of detection was found to be 1.2 pg in a 20‐pg/ml sample solution.
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82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
07.60.Rd Visible and ultraviolet spectrometers
32.50.+d Fluorescence, phosphorescence (including quenching)
42.60.-v Laser optical systems: design and operation

A tunable visible and ultraviolet laser on S2 (B3Σu−–X3Σg−)

Stephen R. Leone and Kenneth G. Kosnik

Appl. Phys. Lett. 30, 346 (1977); http://dx.doi.org/10.1063/1.89394 (3 pages) | Cited 41 times

Online Publication Date: 26 August 2008

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Laser action has been achieved on the B3Σu−–X3Σg− transition of S2 by optical pumping with a frequency‐doubled dye laser and a nitrogen laser. The observed lasing is line tunable from 365 to 570 nm. The S2 molecule is a promising candidate for an efficient scalable ultraviolet laser system.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Lg Ultraviolet spectra
33.20.Kf Visible spectra
33.80.Be Level crossing and optical pumping

Reduction of the effective height of metal–n‐InP Schottky barriers using thin epitaxial layers

P. M. White and D. M. Brookbanks

Appl. Phys. Lett. 30, 348 (1977); http://dx.doi.org/10.1063/1.89395 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Reduction of the effective height of metal–n‐InP Schottky barriers from 0.4 to 0.24 eV has been achieved by utilizing thin epitaxial n+ surface layers which are fully depleted at zero bias. A novel ’’ramp‐etching’’ technique has been used to investigate the effect of n+ thickness on current‐voltage characteristics and shows that further effective reductions are possible using thicker n+ layers which are not depleted at zero bias. Low height barriers of this type have applications in high‐efficiency transferred electron microwave oscillators.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling
73.40.Ns Metal-nonmetal contacts
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

Reduction of grain boundary recombination in polycrystalline silicon solar cells

T. H. DiStefano and J. J. Cuomo

Appl. Phys. Lett. 30, 351 (1977); http://dx.doi.org/10.1063/1.89396 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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The possibility of increasing the carrier collection efficiency in polycrystalline silicon by means of a heavily doped region near the grain boundaries is investigated. Phosphorous dopant is preferentially introduced into the grain boundaries of p‐type material by a low‐temperature diffusion process. A subsequent high‐temperature diffusion forms a highly n‐doped skin covering each grain. The resulting junction around each grain surface collects electrons which might otherwise recombine at the grain boundaries. This grain boundary doping scheme makes possible an increase in the conversion efficiency of polycrystalline silicon solar cells in which the grain structure is columnar.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
78.40.Fy Semiconductors
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

1500‐h continuous cw operation of double‐heterostructure GaInAsP/InP lasers

C. C. Shen, J. J. Hsieh, and T. A. Lind

Appl. Phys. Lett. 30, 353 (1977); http://dx.doi.org/10.1063/1.89397 (2 pages) | Cited 47 times

Online Publication Date: 26 August 2008

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The first three double‐heterostructure GaInAsP/InP diode lasers to be life tested have so far logged over 1500, 1100, and 700 h, respectively, of continuous cw operation at room temperature without degradation. Their emission wavelength is 1.15 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

A colloid‐SEM method for the study of fine magnetic domain structures

K. Goto and T. Sakurai

Appl. Phys. Lett. 30, 355 (1977); http://dx.doi.org/10.1063/1.89398 (2 pages) | Cited 13 times

Online Publication Date: 26 August 2008

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A simple method to obtain fine magnetic domain patterns is described. The method has two processes, the first is to make the usual Bitter patterns and the second to observe dried colloidal particles on domain boundaries by a scanning electron microscope (SEM) in the secondary electron mode. Micrographs of domain patterns of hexagonal cobalt have been shown at magnifications of SEM from 2000 to 5000. Owing to the large focal depth of SEM, it is able to observe domains on both surfaces of a crystal edge at the same time, and examples have been shown.
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75.60.Ch Domain walls and domain structure
75.50.Tt Fine-particle systems; nanocrystalline materials
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
07.55.-w Magnetic instruments and components

Determination of the Be–Auger‐electron attenuation length in Be using 160‐keV protons

P. B. Needham, T. J. Driscoll, C. J. Powell, and R. J. Stein

Appl. Phys. Lett. 30, 357 (1977); http://dx.doi.org/10.1063/1.89399 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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We report the first results of a method for determining the inelastic attenuation length of low‐energy electrons in the surface region of a solid from the yield of characteristic Auger electrons excited by proton bombardment. Samples of evaporated beryllium were bombarded by 160‐keV protons, and the attenuation length of 100‐eV electrons in Be was determined to be 6.1 Å.
Show PACS
72.15.Lh Relaxation times and mean free paths
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
34.50.-s Scattering of atoms and molecules

High‐resolution topographical images of small metal particles

M. José Yacamán and T. Ocaña Z.

Appl. Phys. Lett. 30, 359 (1977); http://dx.doi.org/10.1063/1.89400 (2 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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A technique to obtain high‐resolution topographical information of particles in the Angstrom‐size with a transmission electron microscope is described. This consists of obtaining dark‐field images of particles which are tilted away from the Bragg angle and in a N‐beam diffracting condition. The effective extinction distance is then substantially reduced and topographical analysis of the small crystallities can be obtained from Pendellösung fringes.
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68.55.-a Thin film structure and morphology
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
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