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15 Apr 1977

Volume 30, Issue 8, pp. 361-436

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Broadband generation of acoustic surface waves on GaAs by conversion from acoustoelectrically amplified bulk waves

S. Mishra and Ralph Bray

Appl. Phys. Lett. 30, 361 (1977); http://dx.doi.org/10.1063/1.89429 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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This paper describes the first observation of the generation of surface waves in a broad frequency band (0.2<f<1.0 GHz) by conversion from bulk acoustic waves. The latter are obtained by acoustoelectric amplification from thermal background in GaAs samples at 300 K. The surface waves are generated in the form of narrow propagating domains. Both group and phase velocity measurements, carried out on the principal crystallographic surfaces, served to identify the surface waves.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Decay time of twist cells with liquid crystals of shortened pitch

S. Aftergut and H. S. Cole

Appl. Phys. Lett. 30, 363 (1977); http://dx.doi.org/10.1063/1.89430 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Chiral nematogens of natural pitch p0 and layer thickness d were investigated over the regime d<p0<4d in cells with π/2 twist imposed by wall orientation. The decay times in this regime were smaller than for p0⩾4d.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
85.60.Pg Display systems

Ion implantation as an ultrafast quenching technique for metastable alloy production: The Ag‐Cu system

J. M. Poate, J. A. Borders, A. G. Cullis, and J. K. Hirvonen

Appl. Phys. Lett. 30, 365 (1977); http://dx.doi.org/10.1063/1.89431 (4 pages) | Cited 25 times

Online Publication Date: 26 August 2008

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Substitutional solid solutions of Ag in Cu have been formed by ion implanting Ag at concentrations up to 16 at.%. The physical states of the implanted alloys were deduced by ion channeling and transmission electron microscopy and their stability was examined by annealing to 400 °C. The implantation results are compared with those obtained previously by conventional rapid quenching techniques.
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61.80.Jh Ion radiation effects
64.60.My Metastable phases

The origin of dislocation climb during laser operation

S. O’Hara, P. W. Hutchinson, and P. S. Dobson

Appl. Phys. Lett. 30, 368 (1977); http://dx.doi.org/10.1063/1.89432 (4 pages) | Cited 48 times

Online Publication Date: 26 August 2008

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The origin of the dislocation climb which takes place in the presence of electron‐hole recombination in laser structuresis discussed. TEM studies on lasers which have been degraded by either forward bias or by optical pumping show that the climb dipoles are extrinsic in both cases. In addition, completely isolated interstitial loops can form which also have the characteristic climb appearance of the larger dipoles. Existing theories for the origin of the interstitials required to account for the observed climb are considered in detail, and it is concluded that the climb structures can best be explained by the emission of both gallium and arsenic vacancies from the dislocation as a consequence of nonradiative processes occurring at the dislocation core.
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42.55.Px Semiconductor lasers; laser diodes
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.jd Vacancies
61.72.jj Interstitials

Ultrafast echotomographic system using optical processing of ultrasonic signals

C. Bruneel, R. Torguet, K. M. Rouvaen, E. Bridoux, and B. Nongaillard

Appl. Phys. Lett. 30, 371 (1977); http://dx.doi.org/10.1063/1.89436 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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An ultrafast ultrasonic tomograph has been developed in our laboratory for direct observation of the living tissues inside the human body. Acousto‐optic interaction is the basic principle of our system. The information carried by the acoustic wave is impressed on a light beam diffracted during the acousto‐optic interaction and an optical system is used for displaying a real image of an isonified object. A first and simple realization has been used to check the principle of operation. Directions for future improvements are iscussed.
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87.57.-s Medical imaging
87.63.-d Non-ionizing radiation equipment and techniques
87.85.Pq Biomedical imaging
43.58.+z Acoustical measurements and instrumentation
43.80.+p Bioacoustics
43.80.-n Bioacoustics
87.50.Y- Biological effects of acoustic and ultrasonic energy

A SAW bandpass filter technique using a fanned multistrip coupler

Leland P. Solie

Appl. Phys. Lett. 30, 374 (1977); http://dx.doi.org/10.1063/1.89437 (3 pages)

Online Publication Date: 26 August 2008

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A SAW filter is described which uses multistrip couplers with diferent periodicities in two adjacent tracks in order to transfer a surface wave from one track to the other over a restricted frequency band, i.e., to filter the signal. The principal advantage is good filtering with low insertion loss. Over 30‐dB out‐of‐band rejection with 3‐dB loss in the fanned multistrip coupler at a frequency of 216 MHz is demonstrated.
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43.60.+d Acoustic signal processing
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Suppression of Li2O out‐diffusion from Ti‐diffused LiNbO3 optical waveguides

T. R. Ranganath and S. Wang

Appl. Phys. Lett. 30, 376 (1977); http://dx.doi.org/10.1063/1.89438 (4 pages) | Cited 22 times

Online Publication Date: 26 August 2008

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Light guides fabricated by Ti diffusion into y‐cut LiNbO3 are attractive because of the possibility of using the larest electro‐optic coefficient (r33). However, the accompanying Li2O out‐diffusion gives rise to unwanted guided modes which are a problem in electro‐optic modulators. To overcome this problem it is necessary to reintroduce Li back into the crystal by some means. Here we report on a simplebut effective process (using Li2O) to suppress Li2O out‐diffusion and realize single‐mode Ti‐diffused LiNbO3 light guides in a y‐cut orientation. A natural extension of the above process to Ti‐diffused LiTaO3 light‐guiding structure should be possible.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Evaluation of cadmium stannate films for solar heat collectors

G. Haacke

Appl. Phys. Lett. 30, 380 (1977); http://dx.doi.org/10.1063/1.89439 (2 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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Optical transmission and reflection data are reported for Cd2SnO4 films coated onto transparent substrates or silicon. It is shown that these coatings are candidates for transparent heat reflectors and selective absorber components in solar heat collectors.
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84.60.Ve Energy storage systems, including capacitor banks
75.20.Ck Nonmetals

Optical display device using bistable electrets

J. L. Bruneel and F. Micheron

Appl. Phys. Lett. 30, 382 (1977); http://dx.doi.org/10.1063/1.89412 (2 pages)

Online Publication Date: 26 August 2008

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The bistable mechanical motion of a corona‐charged polypropylene film in the electric field developed between two electrodes is used in the construction of a new transmission light gate. The minimum switching voltage and time are, respectively, 500 V and 50 ms, in accordance with the proposed motion model. Optical and electrical characteristics of an electret display device using a 5×3 array of light gates are presented.
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85.60.Pg Display systems
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)

Production of megawatt submillimeter pulses by stimulated magneto‐Raman scattering

V. L. Granatstein, S. P. Schlesinger, M. Herndon, R. K. Parker, and J. A. Pasour

Appl. Phys. Lett. 30, 384 (1977); http://dx.doi.org/10.1063/1.89413 (3 pages) | Cited 52 times

Online Publication Date: 26 August 2008

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Pulses of submillimeter radiation (λ∼400 μm) with a peak power of approximately 1 MW have been generated by illuminating an intense relativistic electron beam with a counterstreaming microwave pump wave (λ∼2 cm). This observation of powerful submillimeter radiation is consistent with a model of stimulated scattering which includes a resonance between the pump wave frequency and the electron cyclotron frequency as well as the occurrence of electrostatic oscillations at the beam plasma frequency.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
52.27.Ny Relativistic plasmas
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)

Measurement of stress gradients generated by electromigration

I. A. Blech and K. L. Tai

Appl. Phys. Lett. 30, 387 (1977); http://dx.doi.org/10.1063/1.89414 (3 pages) | Cited 64 times

Online Publication Date: 26 August 2008

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Stress gradients generated by electromigration in aluminum films were measured at 340 °C. The stresses were measured by combining x‐ray topography to record the effects of the film stress and scanning electron microscopy to measure the information on the topographs. At the electromigration threshold the stress gradients of 200‐μm‐long stripes are 6×1010 dyn/cm3, corresponding to an effective charge of z∗=−1.2.
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68.60.-p Physical properties of thin films, nonelectronic
82.45.-h Electrochemistry and electrophoresis
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Carrier removal rate for n‐type and p‐type silicon by fission‐fragment irradiation

Hisao Kobayashi, Yasukiyo Takami, and Tetsuo Ikeda

Appl. Phys. Lett. 30, 389 (1977); http://dx.doi.org/10.1063/1.89415 (3 pages)

Online Publication Date: 26 August 2008

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A spreading resistance technique was applied to measure carrier removal rate in silicon by fission‐fragment irradiation. It was observed that the impurity concentration affected the initial carrier removal rate for both n‐ and p‐type silicon. The experimental results suggest the formation of clusters in fission‐fragment damage. The initial carrier removal rate was determined to be 9.4×105 and 3.9×105 cm−1 for n‐ and p‐type silicon at 298 °K; the impurity concentration for both types of silicon was 1×1015 cm−3. It was found that fission fragments had produced at least two deep level acceptors and one deep level donor and their levels were Ec−0.37 eV and Ec−0.51 eV for n‐type silicon and Ev+0.27 eV for p‐type silicon.
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61.80.Lj Atom and molecule irradiation effects
72.80.Cw Elemental semiconductors
78.40.Fy Semiconductors

A controlled‐atmosphere electron‐microscopy study of the influence of oxygen on the interdiffusion of gold and iron

J. A. Cairns, C. W. Keep, R. J. Waite, J. F. Ziegler, and K. N. Tu

Appl. Phys. Lett. 30, 392 (1977); http://dx.doi.org/10.1063/1.89416 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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Controlled‐atmosphere electron microscopy is used to show that when thin (∼150 Å) superimposed layers of Au/Fe/Au are heated in an oxygen environment, a dramatic breakup of the gold into islets occurs at 300–350 °C. By utilizing previous Rutherford backscattering observations of this system and complementing the electron‐microscope observations with x‐ray photoelectron spectroscopy examination, it is possible to gain an insight into the nature of the process and highlight the role played by oxygen in the breakup of the gold layer.
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66.30.J- Diffusion of impurities
81.05.Bx Metals, semimetals, and alloys
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Refractive index of garnet films containing Ca and Ge

Manfred Wöhlecke and James C. Suits

Appl. Phys. Lett. 30, 395 (1977); http://dx.doi.org/10.1063/1.89417 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Refractive‐index–vs–wavelength data are reported over a wavelength range of 0.56 to 0.97 μ for several garnets containing Ca2+ and Ge4+ and various compositions of rare‐earth ions. The experimental data were fitted to a two‐term Sellmeier expression and a linear relation between index of refraction and number of Fe3+ ions was found for garnet composition with small rare‐earth content.
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75.20.Ck Nonmetals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Back‐surface emitting GaAsxSb1−x LED’s (λ=1.0 μm) prepared by molecular‐beam epitaxy

A. Y. Cho, H. C. Casey, and P. W. Foy

Appl. Phys. Lett. 30, 397 (1977); http://dx.doi.org/10.1063/1.89418 (3 pages) | Cited 13 times

Online Publication Date: 26 August 2008

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Compositionally graded layers of GaAsxSb1−x have been grown on GaAs substrates by molecular‐beam epitaxy. Planar Zn‐diffused 50‐μm‐diam light‐emitting diodes have been prepared in GaAs0.9Sb0.1. The 1.0‐μm wavelength emission was taken out through the transparent GaAs substrate, and for a pulsed current of 100 mA, the external quantum efficiency was 0.1%.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Comparison of range and range straggling of implanted 10B and 11B in silicon

H. Ryssel, H. Kranz, K. Müller, R. A. Henkelmann, and J. Biersack

Appl. Phys. Lett. 30, 399 (1977); http://dx.doi.org/10.1063/1.89419 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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In this paper the ranges of implanted boron ions in silicon measured by the 10B (n,α)7Li reaction and by means of Hall‐effect and sheet‐resistivity measurements are compared for 10B and 11B. It is shown that the ranges and the range straggling are identical within the experimental error.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
29.40.-n Radiation detectors

Pulsed laser heating of thin opaque targets in air

James E. Robin

Appl. Phys. Lett. 30, 401 (1977); http://dx.doi.org/10.1063/1.89420 (4 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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A simple analytical model has been developed which describes the heating of a thin opaque target in air when subjected toirradiation from a high‐power pulse laser. Effects due to the formation of a laser supported absorption wave (LSAW) above the target surface are explicitly included in this model. The results shows that despite the increased coupling due to the presence of the LSAW, the resultant target heating from a tightly focused beam (small spot diameter) can be severely retarded by energy spreading as the LSAW expands over the target surface.
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79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
64.70.D- Solid-liquid transitions

Addition of HCl to the double‐pulse copper chloride laser

A. A. Vetter and N. M. Nerheim

Appl. Phys. Lett. 30, 405 (1977); http://dx.doi.org/10.1063/1.89421 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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Addition of small amounts of hydrogen chloride to the buffer gas of a double‐pulse CuCl laser causes an increase in the production of copper atoms in the ground state. A maximum laser energy increase of 15% was observed and the span of delay times for which laser action occurred increased.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Analytical photon catalysis: Measurement of gas phase concentrations to 104/cm3 

Gene A. Capelle and David G. Sutton

Appl. Phys. Lett. 30, 407 (1977); http://dx.doi.org/10.1063/1.89422 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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A new analytic technique was developed to determine quantitatively the concentration of gas‐phase species at concentrations well below the measurement capabilities of atomic absorption and mass spectroscopy. The method involves injecting an excess of an energetic metastable species, N2(A3Σ+u) in this experiment, into a gas stream containing the species to be measured, Bi in this case. Energy transfer from the metastable to the sample species results in excitation and subsequent rapid emission of light. The intensity of the light emitted at the wavelengths characteristic of the sample species is a function of, and hence a measure of, the concentration. Concentrations as low as 1.5×104/cm3 were measured. Greater sensitivity is possible with more efficient optical detection.
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82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)

A helium‐mercury direct nuclear pumped laser

M. A. Akerman, G. H. Miley, and D. A. McArthur

Appl. Phys. Lett. 30, 409 (1977); http://dx.doi.org/10.1063/1.89423 (4 pages) | Cited 17 times

Online Publication Date: 26 August 2008

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A 6150‐Å He‐Hg laser, pumped solely by the 1n (10B,α) 7Li nuclear reaction, has been achieved using the Sandia SPRII reactor. The optimum conditions for lasing were 600 Torr total pressure with 2.5 mTorr Hg partial pressure, with a threshold for lasing of ∼1016 n/cm2 sec. This is the first visible‐wavelength laser having nuclear energy as its only source of excitation.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Efficient injection mechanism for electroluminescence in GaN 

G. Jacob and D. Bois

Appl. Phys. Lett. 30, 412 (1977); http://dx.doi.org/10.1063/1.89424 (3 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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GaN electroluminescent devices have been realized with external quantum efficiency close to 1% in the yellow and 0.3% in the green. The active region is composed of two zinc‐doped layers, n type and semi‐insulating (1000 Å), and a metal contact. Electroluminescence is obtained with voltages of 5–10 V typically and values as low as 2.5 to 4 V have been obtained (+ on the metal). A model is proposed to explain the injection in this structure; it involves impurity band conduction and electron injection from the (n) to (i) side. The I (V) characteristic is found to follow the Frenkel‐Poole law.
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85.60.Jb Light-emitting devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.60.Fi Electroluminescence
85.30.De Semiconductor-device characterization, design, and modeling

Generation of 16‐μm radiation by four‐wave mixing in para‐hydrogen

M. M. T. Loy, P. P. Sorokin, and J. R. Lankard

Appl. Phys. Lett. 30, 415 (1977); http://dx.doi.org/10.1063/1.89425 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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A 16‐μm source based upon the combined effects of stimulated rotational Raman scattering and four‐wave mixing in gaseous para‐hydrogen has been experimentally demonstrated. The input beams were synchronized pulses from a ruby laser and a CO2 TEA laser. Pulses with ∼2 μJ of energy were generated at 627.8 cm−1.
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42.65.-k Nonlinear optics
42.60.-v Laser optical systems: design and operation
42.50.-p Quantum optics

Coherent anti‐Stokes Raman scattering in a hollow dielectric waveguide

R. B. Miles, G. Laufer, and G. C. Bjorklund

Appl. Phys. Lett. 30, 417 (1977); http://dx.doi.org/10.1063/1.89426 (3 pages) | Cited 49 times

Online Publication Date: 26 August 2008

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Hollow waveguides are shown to enhance coherent anti‐Stokes Raman scattering by two to three orders of magnitude for low‐pressure gases. Theoretical and experimental comparisons of signals generated by tight focusing in a cell with those generated in a hollow waveguide are preented. These arguments show that maximum conversion in the hollow waveguide occurs at pressures on the order of several atmospheres compared to greater than 50 atm for tight focusing, and for low pressures enhancements are on the order of the square ofthe waveguide length to confocal beam parameter ratio.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
51.70.+f Optical and dielectric properties
33.20.Fb Raman and Rayleigh spectra (including optical scattering)
42.79.Gn Optical waveguides and couplers

CF4 and NOCl molecular lasers operating in the 16‐μm region

Joe J. Tiee and Curt Wittig

Appl. Phys. Lett. 30, 420 (1977); http://dx.doi.org/10.1063/1.89427 (3 pages) | Cited 31 times

Online Publication Date: 26 August 2008

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We have obtained stimulated emission in the 16‐μm egion from CF4 and NOCl with an optical pumping scheme which uses a single CO2 TEA laser as the excitation source. Measured laser energies from CF4 and NOCl are 4 and 3 mJ, respectively, which represents an order‐of‐magnitude improvement over exisiting molecular lasers oscillating in this region. There appear to be no fundamental limitations to scaling these lasers to energies ⩾1 J. These lasers offer considerable promise for the laser isotope separation of uranium.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.60.+s Isotope separation and enrichment

Photovoltaic properties of n‐CdS/p‐CdTe heterojunctions prepared by spray pyrolysis

Yale Y. Ma, Alan L. Fahrenbruch, and Richard H. Bube

Appl. Phys. Lett. 30, 423 (1977); http://dx.doi.org/10.1063/1.89428 (2 pages) | Cited 29 times

Online Publication Date: 26 August 2008

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Heterojunction solar cells of n‐CdS/p‐CdTe have been prepared by deposition of CdS films by spray pyrolysis on single‐crystal CdTe to produce solar efficiencies greater than 6% without optimization or correction for reflection loss. Cells prepared by this method therefore compare favorably with cells prepared by vacuum evaporation of CdS. In addition, the highest open‐circuit voltage (0.74 V) observed to date in an efficient n‐CdS/p‐CdTe solar cell has been produced by this fabrication process.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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