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1 Jul 1977

Volume 31, Issue 1, pp. 1-52


A SAW pulse compression filter using the reflective dot array (RDA)

H. van de Vaart and L. P. Solie

Appl. Phys. Lett. 31, 1 (1977); http://dx.doi.org/10.1063/1.89484 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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In this letter, results are reported on the first surface‐acoustic‐wave pulse compression filter using the reflective dot array (RDA). The results show that the RDA approach is capable of producing very‐high‐performance pulse compression filters, comparable to RAC devices, but at much lower cost. The primary advantage of the RDA is that it is part of the same mask as the transducers, thus permitting single‐step fabrication.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
43.60.+d Acoustic signal processing
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

The photoinduced Rayleigh scattering in BaTiO3 crystals showing the bulk photovoltaic effect

G. Chanussot, V. M. Fridkin, G. Godefroy, and B. Jannot

Appl. Phys. Lett. 31, 3 (1977); http://dx.doi.org/10.1063/1.89471 (2 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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In BaTiO3 crystals possessing bulk photovoltaic behavior a photoinduced polarized Rayleigh scattering was observed. The results show that illumination of BaTiO3 crystals creates an inhomogeneous distribution of spontaneous polarization (photofluctuations) which are responsible for both effects, the bulk photovoltaic effect and the polarized Rayleigh scattering. The pseudo‐Jahn‐Teller effect which was introduced earlier for other photoferroelectric phenomena is assumed to be responsible for the creation of these photoinduced fluctuations.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
72.40.+w Photoconduction and photovoltaic effects
77.80.Dj Domain structure; hysteresis

Fluorescence‐activated liquid‐crystal display

G. Baur and W. Greubel

Appl. Phys. Lett. 31, 4 (1977); http://dx.doi.org/10.1063/1.89476 (3 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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By combination of a liquid‐crystal light valve with a simple additional device, a great brightness intensification of the displayed digits is achievable solely by efficient use of ambient light. In a plastic plate, doped with fluorescent molecules, ambient light is collected, guided, and finally emitted at the digit segments. Promising experimental results have been obtained.
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85.60.Pg Display systems
78.20.Jq Electro-optical effects
61.30.-v Liquid crystals

Poling rates for films of polyvinylidene fluoride

W. R. Blevin

Appl. Phys. Lett. 31, 6 (1977); http://dx.doi.org/10.1063/1.89478 (3 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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The growth of the pyroelectric coefficient p (T) of 6‐μm films of polyvinylidene fluoride during poling with a field of 100 MV m−1 was measured for the poling temperatures Tp=100, 80, 60, 40, and 20 °C. Decreasing Tp greatly reduced the growth rate of p (T), but not the value of p (T) attainable by prolonged poling. For the best poled films p (T) increased with the film temperature T from 30 μC m−2 K−1 at 0 °C to 55 μC m−2 K−1 at 80 °C. The poling period required for p (20 °C), the room‐temperature value of p (T), to reach 25 μC m−2 K−1 ranged from 0.5 min at Tp=100 °C to 8000 min at Tp=20 °C.
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77.70.+a Pyroelectric and electrocaloric effects

Spectroscopic observation of fast ions from laser‐produced plasmas

E. A. McLean, R. Decoste, B. H. Ripin, J. A. Stamper, H. R. Griem, J. M. McMahon, and S. E. Bodner

Appl. Phys. Lett. 31, 9 (1977); http://dx.doi.org/10.1063/1.89479 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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Using a time‐of‐flight spectroscopic technique, measurements were made of the ion energy distributions of very fast ions and thermal ions produced when a 7–15‐J 100‐psec Nd : glass laser pulse (1.06 μm) strikes a (CH2)n slab target. Ion energies greater than 0.5 MeV have been observed for the first time with this technique of measurement. A simultaneous comparison is made between the signal of an ion charge collector placed 30 cm from the target and the intensity of the C VI 3434‐Å ion line at 1 cm from the target.
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52.70.Nc Particle measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Thin‐film VO2 submillimeter‐wave modulators and polarizers

John C. C. Fan, Harold R. Fetterman, Frank J. Bachner, Paul M. Zavracky, and Christopher D. Parker

Appl. Phys. Lett. 31, 11 (1977); http://dx.doi.org/10.1063/1.89480 (3 pages) | Cited 17 times

Online Publication Date: 26 August 2008

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Submillimeter‐wave modulators and switchable polarizers have been fabricated from VO2 thin films deposited on sapphire substrates. By passing electric current pulses through elements made from these films, the films can be thermally cycled through the insulator‐to‐metal transition that occurs in VO2 at about 65 °C. In the insulating state, the films are found to have negligible effect on the transmission at submillimeter wavelengths, while above the phase transition the transmission is strongly reduced by the free‐electron effects characteristic of a metal. Other possible applications of such switchable VO2 elements include variable bandpass filters and diffraction grating beam‐steering devices.
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71.30.+h Metal-insulator transitions and other electronic transitions
42.79.Hp Optical processors, correlators, and modulators
42.60.Fc Modulation, tuning, and mode locking
42.70.-a Optical materials

Photoionization cross sections for excited states of argon and krypton

H. A. Hyman

Appl. Phys. Lett. 31, 14 (1977); http://dx.doi.org/10.1063/1.89481 (2 pages) | Cited 24 times

Online Publication Date: 26 August 2008

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Calculations have been carried out for the photoionization cross sections of excited states of atomic argon and krypton, relevant to the KrF laser. At λ=2486 Å, it is found that photoabsorption due to the 3P0,2 metastable states is relatively unimportant, while the cross sections for the first excited p states are large (∼4.5 ×10−18 cm2).
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32.80.Fb Photoionization of atoms and ions
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Photoelectronic properties of CdTe‐electrolyte heterojunctions: Feasibility as solar energy converters

Cornelius Menezes, F. Sánchez‐Sinencio, J. S. Helman, Richard Williams, and J. Dresner

Appl. Phys. Lett. 31, 16 (1977); http://dx.doi.org/10.1063/1.89482 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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We show that cadmium telluride is a promising material for semiconductor‐electrolyte solar cells. Polycrystalline n‐type CdTe, in contact with an aqueous solution of SnCl2, forms a well‐defined Schottky barrier. The efficiency in sunlight is 4.8%. The cell shows a drift of characteristics with time that may be associated with a low rate of formation of hydroxide on the surface. However, operating stability is relatively good compared with other semiconductor‐electrolyte cells that have been reported in the past.
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84.60.Jt Photoelectric conversion
82.45.-h Electrochemistry and electrophoresis
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Mr Semiconductor-electrolyte contacts

The implosion of cryogenic spherical shell targets

T. M. Henderson and R. R. Johnson

Appl. Phys. Lett. 31, 18 (1977); http://dx.doi.org/10.1063/1.89483 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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Spherical glass shells filled with deuterium‐tritium gas have been used as cryogenic targets in neutron‐producing experiments. Experiments were performed under cryogenic conditions to determine the state and form of the fuel at the time of arrival of the laser pulse in target interaction experiments. The results from neutron‐producing experiments indicate that cryogenic targets implode significantly better than room‐temperature targets under comparable experimental conditions and that the neutron production for cryogenic targets is significantly greater than for equivalent targets at room temperature.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Fi Transport properties
28.52.-s Fusion reactors

Radiation‐enhanced outdiffusion of xenon implanted in aluminum

K. Wittmaack and P. Blank

Appl. Phys. Lett. 31, 21 (1977); http://dx.doi.org/10.1063/1.89485 (3 pages) | Cited 14 times

Online Publication Date: 26 August 2008

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Entrapment of 10–160‐keV xenon implanted under UHV conditions in polycrystalline aluminum has been investigated by Rutherford backscattering. The saturation xenon distributions were found to be strongly affected by radiation‐enhanced outdiffusion. Different from silicon the loss of xenon from near‐surface regions of aluminum increases with increasing ion energy. The results are explained in terms of spike‐activated diffusion.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Observation of a nonlinear photoacoustic signal with potential application to nanosecond time resolution

Mark G. Rockley and J. Paul Devlin

Appl. Phys. Lett. 31, 24 (1977); http://dx.doi.org/10.1063/1.89486 (2 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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Preliminary experimental results are reported which demonstrate the application of photoacoustic spectroscopy to the measurement of excited‐state absorption spectra with nanosecond time resolution.
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07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
06.60.Jn High-speed techniques (microsecond to femtosecond)

Three‐body quenching of KrF∗ by Ar and broad‐band emission at 415 nm

J. A. Mangano, J. H. Jacob, M. Rokni, and A. Hawryluk

Appl. Phys. Lett. 31, 26 (1977); http://dx.doi.org/10.1063/1.89465 (3 pages) | Cited 47 times

Online Publication Date: 26 August 2008

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A kinetic model for the formation and quenching of KrF∗ (2Σ1/2) that is applicable for electron‐beam‐excited mixtures of Ar/Kr/F2 containing ⩽15% Kr is presented. The product of the rate constant for the postulated three‐body quenching process (KrF∗ +2 Ar→ArKrF∗+Ar) and the KrF∗ lifetime is determined to be 5.2 ×10−40 cm6. An exchange reaction (Kr+ArKrF∗→Kr2F∗+Ar) rapidly leads to the formation of Kr2F∗ whose emission is observed in a broad band centered at 415 nm. The KrF∗ laser saturation flux is given in terms of measured parameters and the mixture number density; for a 1‐atm mixture with 0.3% F2 and 1% Kr it is 0.85 MW/cm2.
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34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.80.Dp Atomic excitation and ionization

Optically cascaded pulsed DF chemical laser

G. R. Osche

Appl. Phys. Lett. 31, 29 (1977); http://dx.doi.org/10.1063/1.89466 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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The optical extraction efficiencies and temporal characteristics of a pulsed optically cascaded SF6+D2 chemical laser are presented. It is shown that the directly coupled cascade P3(7) →P2(8) →P1(9) yields approximately 53% of the total multiline energy, while the rotationally coupled cascade P3(6) →P2(8) →P1(10) and the mixed cascade P3(6) →P2(8) →P1(9) are slightly less efficient. Cavity parameters, relative emission strengths, and natural delay times for oscillation of P lines are shown to have a strong influence on the total peak power.
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42.55.Ks Chemical lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

vuv emissions from mixtures of F2 and the noble gases—A molecular F2 laser at 1575 Å

James K. Rice, A. Kay Hays, and Joseph R. Woodworth

Appl. Phys. Lett. 31, 31 (1977); http://dx.doi.org/10.1063/1.89467 (3 pages) | Cited 47 times

Online Publication Date: 26 August 2008

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We have observed two new emission features in electron‐beam‐excited mixtures of molecular fluorine with either neon or helium. One feature is a continuum centered at 1080 Å which we attribute to NeF∗. The other emission feature is a band system extending from 1500–1600 Å which we attribute to a transition of molecular fluorine. This transition lased near 1575 Å.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.72.-g Optical sources and standards

Optical attenuation in pure and doped fused silica in the ir wavelength region

T. Izawa, N. Shibata, and A. Takeda

Appl. Phys. Lett. 31, 33 (1977); http://dx.doi.org/10.1063/1.89468 (3 pages) | Cited 26 times

Online Publication Date: 26 August 2008

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Infrared absorption spectra of GeO2‐, P2O5‐, and B2O3‐doped fused silica and nondoped fused silica have been obtained in the 3–25‐μm wavelength region. It is shown that the intrinsic infrared absorption loss of doped silica fiber increases by several orders of magnitude beyond 1.8–2.0 μm because of the overtone and combination tone vibrations of the SiO4 tetrahedron. The loss spectrum is affected by dopants, especially in the case of B2O3. The lower limit of attenuation in optical fiber is estimated to be about 0.2 dB/km at 1.6 μm.
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42.81.-i Fiber optics
78.30.-j Infrared and Raman spectra
42.25.Bs Wave propagation, transmission and absorption
42.70.Ce Glasses, quartz

cw optically resonance pumped transfer laser in DF‐CO2 system

John H. S. Wang, Jack Finzi, and F. N. Mastrup

Appl. Phys. Lett. 31, 35 (1977); http://dx.doi.org/10.1063/1.89469 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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An optically pumped cw 10.6‐μm DF/CO2 transfer laser has been demonstrated. This has been accomplished by exciting a 3 cm × 0.3 cm transfer laser medium, consisting of a 1 : 19 : 80 DF/CO2/He flowing gas mixture at 22 torr and room temperature, with a 70‐Watt multiline chemical DF laser. In the preffered ’’intracavity’’ configuration where the transfer‐laser medium was located in between the DF‐laser resonator mirrors, 1.5 W of 10.6‐μm power was outcoupled. This power corresponds to a photon conversion efficiency of available DF‐pump flux to outcoupled transfer‐laser flux of 6%. Analysis predicts that multiline DF laser‐to‐single‐line CO2 photon conversion efficiencies exceeding 90% should be attainable in an optimized apparatus configuration.
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42.55.Ks Chemical lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.20.Rp State to state energy transfer
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient Raman shifting of ArF and KrF laser wavelengths

T. R . Loree, R. C. Sze, and D. L. Barker

Appl. Phys. Lett. 31, 37 (1977); http://dx.doi.org/10.1063/1.89470 (3 pages) | Cited 36 times

Online Publication Date: 26 August 2008

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A series of uv lines has been generated in the region 190–360 nm by multiple Raman scatterings of the ArF and KrF laser wavelengths. ArF has been shifted in H2 and KrF shifted in H2, D2, and CH4. For the optimized case of KrF pumping H2, better than 50% energy conversion was observed to the first Stokes at 2769 Å.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
51.70.+f Optical and dielectric properties

Multiple liquid phase epitaxy of In1−xGaxP1−zAsz double‐heterojunction lasers: The problem of lattice matching

P. D. Wright, E. A. Rezek, N. Holonyak, G. E. Stillman, J. A. Rossi, and W. O. Groves

Appl. Phys. Lett. 31, 40 (1977); http://dx.doi.org/10.1063/1.89472 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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Multiple liquid phase epitaxy of In1−xGaxP1−z Asz‐InP double heterojunctions, from a single set of In‐rich melts, is demonstrated, and is shown to be a useful technique for the study of the problem of lattice matching at heterojunction interfaces and for growing large numbers of low‐threshold (’’defect‐free’’) DH laser wafers (λ∼1 μm).
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions

Pt2Si and PtSi formation with high‐purity Pt thin films

C. Canali, C. Catellani, M. Prudenziati, W. H. Wadlin, and C. A. Evans

Appl. Phys. Lett. 31, 43 (1977); http://dx.doi.org/10.1063/1.89473 (3 pages) | Cited 64 times

Online Publication Date: 26 August 2008

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Formation rates of Pt2Si and PtSi have been measured using 1.8‐MeV 4He+ backscattering spectroscopy. Both silicide layers were grown with t1/2 time dependence, but the formation of PtSi starts only after all available Pt has reacted for the formation of Pt2Si, in disagreement with previously reported results. The activation energies have the common value 1.5±0.1 eV. Auger electron spectroscopy data confirmed the deposited Pt film purity and show that the contaminants contained in the sputter‐deposited Pt layer segregate at the Pt2Si/Pt interface. It is postulated that this interfacial impurity buildup can affect the formation rate of Pt2Si and the further evolution of the system.
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68.55.-a Thin film structure and morphology
82.20.Pm Rate constants, reaction cross sections, and activation energies

Inverted‐ridge‐waveguide double‐heterostructure injection laser with current and lateral optical confinement

Luis Figueroa and Shyh Wang

Appl. Phys. Lett. 31, 45 (1977); http://dx.doi.org/10.1063/1.89474 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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Epitaxial growth over chemically etched channels is used to fabricate inverted‐ridge‐waveguide (IRW) lasers with current and lateral optical confinement; the former is provided by a two‐step LPE process which results in a p‐n‐p‐n structure in regions away from the channel, and the latter by a thickness variation of the waveguide in the lateral direction. Threshold currents using broad‐area contacts range from 1 A to 600 mA for 30 and 6 μm, respectively, under pulsed operation at room temperature. The lasers exhibit single filament and clear mode spectrum with currents up to 1.5 threshold currents and a linear power‐current relation up to 2Ith.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
68.55.-a Thin film structure and morphology
42.79.Gn Optical waveguides and couplers

Interstitial potential differences, electronegativity differences, and effective ionic charges in zinc‐blende‐type semiconductors

W. R. Frensley and H. Kroemer

Appl. Phys. Lett. 31, 48 (1977); http://dx.doi.org/10.1063/1.89475 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Simple semi‐empirical self‐consistent pseudopotential calculations of various semiconductors, fitted to the empirical band structures, lead to interstital potential differences that can be described by an ionic model such that the ionic charges are proportional to the differences of the PHillips electronegativities for the participating ion species, e∗/e≃0.76DX. The results are applied to dipole corrections in heterojunction lineups.
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32.10.Hq Ionization potentials, electron affinities
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Calculation of recombination rate constants for KrF∗+R+R →RKrF∗+R (R=Ar, Kr)

Ven H. Shui

Appl. Phys. Lett. 31, 50 (1977); http://dx.doi.org/10.1063/1.89477 (3 pages) | Cited 13 times

Online Publication Date: 26 August 2008

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The recombination of KrF∗+R+R→RKrF∗+R (R=Ar, Kr) has been modelled. The rate constants calculated by using the classical phase‐space theory are kr(Ar) =9×10−32 cm6/sec and kr(Kr) =5×10−31 cm6/sec.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
34.10.+x General theories and models of atomic and molecular collisions and interactions (including statistical theories, transition state, stochastic and trajectory models, etc.)
82.20.Wt Computational modeling; simulation
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