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1 Dec 1977

Volume 31, Issue 11, pp. 719-787

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Fluorescent liquid‐crystal display utilizing an electric‐field‐induced cholesteric‐nematic transition

L. J. Yu and M. M. Labes

Appl. Phys. Lett. 31, 719 (1977); http://dx.doi.org/10.1063/1.89528 (2 pages) | Cited 23 times

Online Publication Date: 26 August 2008

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An electric‐field‐induced cholesteric‐nematic transition on a sample containing a europium chelate guest molecule of little or no polarization shows contrast ratios as high as 9 : 1 for its brilliant red (612 nm) fluorescence.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
85.60.Pg Display systems

Two‐step annealing of arsenic‐implanted 〈111〉 silicon

V. C. Kannan and D. D. Casey

Appl. Phys. Lett. 31, 721 (1977); http://dx.doi.org/10.1063/1.89529 (2 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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A dose dependence in the effectiveness of a two‐step annealing procedure for As‐implanted 〈111〉 silicon has been observed. The upper limiting dose for which two‐step annealing is more effective than a single‐step 900 °C anneal is ∼2×1015 As/cm2. Increasing the annealing temperature above 900 °C reduces the dose for which two‐step annealing is more effective than single‐step annealing.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

The electrical and mechanical response of lithium niobate shock loaded above the Hugoniot elastic limit

P. L. Stanton and R. A. Graham

Appl. Phys. Lett. 31, 723 (1977); http://dx.doi.org/10.1063/1.89530 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Z‐cut lithium niobate has been subjected to shock loading over a wide stress range to determine the general character of its response. Unusual electrical and mechanical effects are observed.
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62.50.-p High-pressure effects in solids and liquids
64.30.-t Equations of state of specific substances
77.65.-j Piezoelectricity and electromechanical effects
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Direct conversion of CO2 laser energy to high‐voltage electrical energy using a laser‐produced plasma

W. T. Silfvast and L. H. Szeto

Appl. Phys. Lett. 31, 726 (1977); http://dx.doi.org/10.1063/1.89531 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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High‐voltage high‐current pulses of electrical energy (700 V, 14 A, 10 kW) are generated with efficiencies greater than 0.1% for a duration of 30 nsec when a 3–4‐J CO2 TEA laser is focused on a copper cathode in a special vacuum cell designed to collect the ejected high‐energy electrons. Potential applications as a high‐voltage source and as a detector are discussed.
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84.60.Rb Thermoelectric, electrogasdynamic and other direct energy conversion
85.60.-q Optoelectronic devices
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.60.-v Laser optical systems: design and operation

The photothermophone, a device for absolute calibration of photoacoustic spectrometers

J. C. Murphy and L. C. Aamodt

Appl. Phys. Lett. 31, 728 (1977); http://dx.doi.org/10.1063/1.89532 (3 pages) | Cited 14 times

Online Publication Date: 26 August 2008

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A new device for the absolute calibration of cells for photoacoustic spectroscopy is described. Experimental results for a particular cell are reported.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers

cw and improved pulsed operation of the 14‐ and 16‐μm CO2 lasers

B. L. Wexler, T. J. Manuccia, and R. W. Waynant

Appl. Phys. Lett. 31, 730 (1977); http://dx.doi.org/10.1063/1.89533 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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The performance of the 14‐ and 16‐μm CO2 lasers produced in the electric discharge gasdynamic laser has been significantly improved by the addition of a small percentage of H2 to deactivate the (0110) level. This addition tripled the pulsed output of the laser, and 45 μJ at 14 μm and 25 μJ at 16 μm were observed. cw oscillation was achieved for the first time, with output powers of 0.6 and 0.9 W, respectively. The effect of collisional processes in limiting the CO2 density is discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
28.60.+s Isotope separation and enrichment

Mode‐locking characteristics of a neodymium‐glass laser using the polymethine dye No. 3955 in a solid host

J. R. Taylor, W. Sibbett, and A. J. Cormier

Appl. Phys. Lett. 31, 732 (1977); http://dx.doi.org/10.1063/1.89534 (4 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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A neodymium‐phosphate glass oscillator mode locked using the saturable absorber dye No. 3955 in a plastic host has been shown to give completely modulated outputs. Single pulses of duration ∼5 psec with the low background have been obtained, when operating close to threshold. The aperature time of the dye in the plastic host was measured to be 130±25 psec.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

Discharge‐related limitations of CO2 optical gain in TE channel waveguides

A. Papayoanou

Appl. Phys. Lett. 31, 736 (1977); http://dx.doi.org/10.1063/1.89535 (2 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Investigation of TE discharges in a 1.6‐mm square channel has revealed reasons for the inefficient operation of such devices as CO2 oscillators. At high repetition rates the pulsed glow discharges are not wall confined above 100 Torr. Thus wall cooling and complete volumetric excitation are reduced. Energy deposited into the cathode fall region creates considerable problems. At low pressures this energy is a large fraction of the total discharge energy, whereas for higher pressures the power and power density deposited in this region is very high. The resultant localized gas heating dissociates molecules, creates turbulence, and limits gain.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Hc Glow; corona

The role of E/p in waveguide CO2 TE lasers

P. W. Smith, P. J. Maloney, and O. R. Wood II

Appl. Phys. Lett. 31, 738 (1977); http://dx.doi.org/10.1063/1.89521 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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The role of the electric field to pressure ratio (E/p) in waveguide CO2 TE lasers is shown to be different from that in conventional CO2 TE lasers. For waveguide CO2 TE lasers, the optimum E/p in the positive column is greater than that which produces the most efficient excitation of CO2 vibrational levels, because of the necessity to reduce the detrimental effects of the power dissipated in the cathode fall region of the discharge. Experimental results on small‐signal gain versus input energy as a function of E/p are shown to be in agreement with theory. Implications for device design are discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Efficient power combiner for multiplexing multiple sources to single‐fiber optical systems

K. O. Hill, B. S. Kawasaki, and D. C. Johnson

Appl. Phys. Lett. 31, 740 (1977); http://dx.doi.org/10.1063/1.89522 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Efficient combining of optical power from three input optical fibers to a single trunk fiber is demonstrated using fibers of different core/cladding diameters in a biconical taper configuration. The combiners have insertion loss less than 1 dB and optical isolation greater than −50 dB.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.30.-d Imaging and optical processing
42.79.Gn Optical waveguides and couplers

A simple technique for suppressing Li2O out‐diffusion in Ti : LiNbO3 optical waveguide

Shintaro Miyazawa, R. Guglielmi, and A. Carenco

Appl. Phys. Lett. 31, 742 (1977); http://dx.doi.org/10.1063/1.89523 (3 pages) | Cited 14 times

Online Publication Date: 26 August 2008

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Li2O out‐diffusion in Ti‐diffused LiNbO3 optical waveguide was suppressed by annealing a LiNbO3 y‐cut substrate in Li2CO3 powder prior to the Ti‐diffusion process. The waveguide, made of the substrate annealed at 600 °C for 72 h, supported single TE and TM modes without any out‐diffusion modes for 0.6328‐μm light propagation.
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42.79.Gn Optical waveguides and couplers
66.30.J- Diffusion of impurities
42.82.-m Integrated optics
81.40.Tv Optical and dielectric properties related to treatment conditions

Chemical generation of a population inversion between the spin‐orbit states of atomic iodine

A. T. Pritt, R. D. Coombe, D. Pilipovich, R. I. Wagner, D. Benard, and C. Dymek

Appl. Phys. Lett. 31, 745 (1977); http://dx.doi.org/10.1063/1.89524 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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When I2 is injected into a stream of chemically produced O∗2(1Δg), electronically excited iodine atoms [I∗ (52P1/2)] are created. For suitably high O∗2/O2 ratios, a population inversion is established between the 52P1/2 and 52P3/2 atomic states of iodine. The inversion was observed using an optical double‐resonance technique.
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78.60.Ps Chemiluminescence
42.55.Ks Chemical lasers
33.40.+f Multiple resonances (including double and higher-order resonance processes, such as double nuclear magnetic resonance, electron double resonance, and microwave optical double resonance)
32.80.Xx Level crossing and optical pumping

Picosecond gain and saturation measurements of the 353‐nm XeF laser line

I. V. Tomov, R. Fedosejevs, M. C. Richardson, W. J. Sarjeant, A. J. Alcock, and K. E. Leopold

Appl. Phys. Lett. 31, 747 (1977); http://dx.doi.org/10.1063/1.89525 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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The spectral characteristics, temporal gain profile, and saturation energy have been measured for the 353‐nm XeF laser line using a picosecond probe pulse of the third harmonic of a Nd : glass laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Rz Doped-insulator lasers and other solid state lasers

Infrared four‐wave mixing in liquid CO

R. E. McNair and M. B. Klein

Appl. Phys. Lett. 31, 750 (1977); http://dx.doi.org/10.1063/1.89526 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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See Also: Erratum

Show Abstract
Four‐wave mixing of the type ω4 = 2ω1 − ω2 has been observed in pure liquid CO at 77 °K. The CO2 pump beams were derived from separate resonators to yield a mixing signal at 8.64 μm. The power dependence of the mixing signal has been studied over four orders of magnitude and the nonlinear susceptibility has been measured. Scaling calculations show that efficiencies greater than 10% are expected for pump powers near the breakdown threshold and with confinement of the pump beams in a hollow dielectric waveguide.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Mv Dye lasers
28.60.+s Isotope separation and enrichment

Growth of platinum silicide under protective layers

P. Joubert, P. Auvray, A. Guivarc’h, and G. Pelous

Appl. Phys. Lett. 31, 753 (1977); http://dx.doi.org/10.1063/1.89527 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Fast growth and total formation of platinum silicide can be obtained by using a chromium, silicon nitride, or sputtered silicon film to protect the platinum from the unfavorable effects of small amounts of oxygen contained in the furnace during annealing. X‐ray diffraction and Rutherford backscattering analysis were used for identifying the silicides and studying their growth kinetics. The simultaneous growth of the two phases Pt2Si and PtSi was observed. The thickness of Pt2Si and PtSi increased in proportion to the square root of the annealing time with an activation energy of about 2 eV. At higher temperature (∼800 °C), solid‐phase epitaxial growth (SPEG) of silicon was found in the (Si〈111〉)/PtSi/Si amorphous system.
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68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
66.30.Ny Chemical interdiffusion; diffusion barriers

Negative resistances in n‐type CdCr2Se4 single crystals

Yukio Nakano, Kazuo Mitsuzawa, Kunihiko Kodama, and Tatsuya Niimi

Appl. Phys. Lett. 31, 755 (1977); http://dx.doi.org/10.1063/1.89536 (2 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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On a specimen of n‐type CdCr2Se4 single crystals, both the current‐ and voltage‐controlled negative resistances have been observed simultaneously at temperatures below 131 °K, while at temperatures from 131 to 198 °K, only current‐controlled negative resistance had been observed; above 198 °K, neither had been observed.
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72.20.Ht High-field and nonlinear effects
72.80.Ga Transition-metal compounds

Continuously operated (Al,Ga)As double‐heterostructure lasers with 70 °C lifetimes as long as two years

R. L. Hartman, N. E. Schumaker, and R. W. Dixon

Appl. Phys. Lett. 31, 756 (1977); http://dx.doi.org/10.1063/1.89537 (4 pages) | Cited 40 times

Online Publication Date: 26 August 2008

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Lifetimes longer than two years, and decreases in light output power less than 15% at constant current after one year, both at 70 °C, are reported for selected continuously operated double‐heterostructure (Al,Ga)As lasers. Also, a median 70 °C lasing lifetime of 4500 h is reported for 100 lasers chosen randomly from 10 slices. This median lifetime is thought to correspond to 3.0×105 h (34 yr) of continuous operation had the devices been operated at 22 °C. The corresponding mean time to failure is 1.3×106 h (≳100 yr).
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy

Chin‐An Chang, R. Ludeke, L. L. Chang, and L. Esaki

Appl. Phys. Lett. 31, 759 (1977); http://dx.doi.org/10.1063/1.89538 (3 pages) | Cited 102 times

Online Publication Date: 26 August 2008

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Films of In1−xGaxAs and GaSb1−yAsy over the entire composition ranges have been grown on (100) GaAs, InAs, and GaSb substrates by MBE. In situ observations by high‐energy electron diffraction have revealed a variety of surface reconstructions and correlated the growth process with the lattice mismatch. The compositions are governed by the relative rates of In and Ga in In1−xGaxAs, but primarily by that of Sb in GaSb1−yAsy because of its dominant incorporation over As. In these alloys, Sn is found to be a donor throughout In1−xGaxAs but an amphoteric impurity in GaSb1−yAsy.
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68.55.-a Thin film structure and morphology
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
72.80.Ey III-V and II-VI semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Electron and hole drift mobility in amorphous silicon

A. R. Moore

Appl. Phys. Lett. 31, 762 (1977); http://dx.doi.org/10.1063/1.89539 (3 pages) | Cited 56 times

Online Publication Date: 26 August 2008

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Electron and hole drift mobility have been measured in n‐ and p‐type amorphous Si Schottky‐barrier solar cells. At room temperature μdn= (2–5) ×10−2 cm2/V sec and μdp= (5–6) ×10−4 cm2/V sec. Both mobilities are trap controlled with ΔE=0.19 eV for electrons and ΔE=0.35 eV for holes above 250 °K and ΔE=0.16 and 0.26 eV, respectively, below 250 °K. Majority‐carrier lifetimes are estimated to be 1 μsec for electrons and 25 μsec for holes.
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73.30.+y Surface double layers, Schottky barriers, and work functions
84.60.Jt Photoelectric conversion
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ng Disordered solids

Improved heterostructure‐laser light‐output linearity by antireflective coating

R. C. Miller and W. B. Joyce

Appl. Phys. Lett. 31, 764 (1977); http://dx.doi.org/10.1063/1.89540 (2 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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An antireflective coating is shown to raise the kink (abrupt nonlinearity in the light‐current relation) in (Al,Ga)As laser output by a factor of at least 2 or 3 in optical power before an appreciable increase in threshold current is incurred. This observation is consistent with the assumption that the kink occurs at a given optical power within the laser rather than at a given emitted power.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Relaxation of photoexcited carriers in GaAs

V. K. Mathur and S. Rogers

Appl. Phys. Lett. 31, 765 (1977); http://dx.doi.org/10.1063/1.89541 (4 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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An experiment is described to measure directly the mean free lifetime of the photoexcited carriers in a semi‐insulating crystal by monitoring its photoconductivity.
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72.40.+w Photoconduction and photovoltaic effects
42.60.-v Laser optical systems: design and operation
72.80.Ey III-V and II-VI semiconductors

Detection of excess crystalline As and Sb in III‐V oxide interfaces by Raman scattering

Roger L. Farrow, Richard K. Chang, Stanley Mroczkowski, and Fred H. Pollak

Appl. Phys. Lett. 31, 768 (1977); http://dx.doi.org/10.1063/1.89542 (3 pages) | Cited 45 times

Online Publication Date: 26 August 2008

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Raman backscattering from oxidized GaAs and InAs yielded two anomalous peaks of large scattering strength which we have concluded to be from excess As in the interface between the oxides and underlying semiconductors. Similarly, we concluded that the two anomalous peaks from GaSb and InSb are from excess interface Sb. From the frequencies, line shapes, and polarization selection rules, we deduced that the excess As and Sb are in the crystalline semimetal phase, as distinct from the amorphous phase.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.30.-j Infrared and Raman spectra
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Suppression of output nonlinearities in double‐heterostructure lasers by use of misaligned mirrors

B. L. Frescura, C. J. Hwang, H. Luechinger, and J. E. Ripper

Appl. Phys. Lett. 31, 770 (1977); http://dx.doi.org/10.1063/1.89543 (4 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Nonlinearity (kinks) in the dependence of light output power on current has been effectively eliminated by the use of mirrors aligned at a small angle from the direction perpendicular to the stripe or filament. Such a structure increases confinement of the lasing filament and causes an increase in threshold current density that is smaller than that produced by stripe narrowing.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.By Design of specific laser systems

Effect of O2 pressure during deposition on properties of rf‐sputtered Sn‐doped In2O3 films

John C. C. Fan, Frank J. Bachner, and George H. Foley

Appl. Phys. Lett. 31, 773 (1977); http://dx.doi.org/10.1063/1.89544 (3 pages) | Cited 54 times

Online Publication Date: 26 August 2008

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The electrical and optical properties of rf‐sputtered Sn‐doped In2O3 (ITO) films have been found to depend strongly on the O2 partial pressure during deposition. For the sputtering conditions used, films with both low electrical resistivity (ρ ∼ 3 × 10−4 Ω cm) and high visible transmission (∼ 90%) were obtained only over a narrow range of O2 pressures, from 3 × 10−5 to 4 × 10−5 Torr. Our results appear to explain the difficulties that have previously been encountered in obtaining high‐quality ITO films, and indicate that control of the O2 pressure during deposition is essential for reproducible preparation of such films.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Tv Optical and dielectric properties related to treatment conditions
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
75.20.Ck Nonmetals

An inverse ac Josephson effect voltage standard

M. T. Levinsen, R. Y. Chiao, M. J. Feldman, and B. A. Tucker

Appl. Phys. Lett. 31, 776 (1977); http://dx.doi.org/10.1063/1.89520 (3 pages) | Cited 71 times

Online Publication Date: 26 August 2008

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An unbiased Josephson tunnel junction, irradiated with microwaves, can spontaneously develop quantized dc voltages. We explain this effect with reference to the shunted junction model and to analog experiments. This effect may be utilized to significantly improve both the accuracy and the simplicity of the Josephson voltage standard.
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06.20.F- Units and standards
74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
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