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15 Dec 1977

Volume 31, Issue 12, pp. 791-854

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Interstitial doping of amorphous silicon

W. Beyer and R. Fischer

Appl. Phys. Lett. 31, 850 (1977); http://dx.doi.org/10.1063/1.89573 (3 pages) | Cited 32 times

Online Publication Date: 26 August 2008

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Interstitial doping of glow‐discharge a‐Si has been achieved by in‐diffusion and implantation of lithium. After doping with about 1% Li, we observe an increase of room‐temperature conductivity by a factor of 106 and a decrease in the activation energy of conductivity down to 0.17 eV. Corresponding changes are observed for the thermoelectric power which, as expected for n‐type material, has a negative sign.
Show PACS
61.72.U- Doping and impurity implantation
72.80.Ng Disordered solids
72.20.Pa Thermoelectric and thermomagnetic effects

High‐field critical current in in situ multifilamentary Cu‐Sn‐Nb alloys

S. Foner, E. J. McNiff, B. B. Schwartz, R. Roberge, and J. L. Fihey

Appl. Phys. Lett. 31, 853 (1977); http://dx.doi.org/10.1063/1.89574 (2 pages) | Cited 32 times

Online Publication Date: 26 August 2008

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High‐field properties of improved in situ Cu‐Sn‐Nb alloys are presented. Values of critical current densities of 104 A/cm2 and a resistivity of less than 2×10−13 Ω cm are observed at 12 T. Critical current densities for various in situ alloys are presented for fields to 18 T.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.25.-q Properties of superconductors
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