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15 Jul 1977

Volume 31, Issue 2, pp. 53-137

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Dislocation pinning effect of oxygen atoms in silicon

S. M. Hu

Appl. Phys. Lett. 31, 53 (1977); http://dx.doi.org/10.1063/1.89580 (3 pages) | Cited 66 times

Online Publication Date: 26 August 2008

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A definitive proof has now been obtained of the existence of a dislocation pinning effect by oxygen atoms in silicon. Ambiguities caused by uncertain material variables in different crystals or different parts of a crystal are avoided in this investigation by making oxygen out‐diffusion from a wafer, creating a continuous variation of oxygen concentration in a ∼60‐μm‐deep surface layer. Dislocation movement at different depths of this layer was studied using indentation dislocation rosettes (IDR) on a 2° beveled surface. The method of IDR is uniquely suitable for this study because microdislocation half‐loops are generated and confined to move within each ∼10‐μm‐deep layer in a series of precisely determined microregions down the bevel. The size of IDR increases steadily toward the sample surface, in good correlation with the steady decrease of oxygen concentration toward the same sample surface. The effect at the maximum oxygen concentration in this case increases the critical resolved shear stress in silicon by a factor of 4. This is a most beneficial effect in reducing thermal slip in the practical matter of silicon wafer processing.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep

Elastic‐surface‐wave temperature coefficients of delay line with ZnO thin film

Yasuhiko Nakagawa

Appl. Phys. Lett. 31, 56 (1977); http://dx.doi.org/10.1063/1.89588 (2 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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The elastic‐surface‐wave device with a zero first‐order temperature coefficient has been fabricated on Pyrex glass by use of a ZnO thin‐film overlay. The second‐order temperature coefficient of ZnO/Pyrex glass was about 1.24 times as much as that of ST‐cut quartz and was similar in sign. It is shown theoretically that the dispersion is very low at a ZnO film thickness of hK∼1.7, which gives a zero first‐order temperature coefficient.
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62.30.+d Mechanical and elastic waves; vibrations
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
77.65.-j Piezoelectricity and electromechanical effects
46.40.Cd Mechanical wave propagation (including diffraction, scattering, and dispersion)
46.40.Jj Aeroelasticity and hydroelasticity

Dependence of absorption and optical contrast of a dichroic dye guest on the pitch of a chiral nematic host

H. S. Cole and S. Aftergut

Appl. Phys. Lett. 31, 58 (1977); http://dx.doi.org/10.1063/1.89589 (2 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Absorption of unpolarized light by a dichroic dye dissolved in a chiral nematic host increased with a decrease in pitch of the host, accompanied by a proportionate increase in contrast ratio, in qualitative agreement with a theoretical analysis by White and Taylor. Identical experimental values of order parameter of the guest‐host system were obtained by two independent methods.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
85.60.Pg Display systems

A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in a scanning transmission electron microscope

P. M. Petroff and D. V. Lang

Appl. Phys. Lett. 31, 60 (1977); http://dx.doi.org/10.1063/1.89590 (3 pages) | Cited 43 times

Online Publication Date: 26 August 2008

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A new spectroscopic technique for imaging the spatial distribution of nonradiative defects in semiconductor materials is presented. The technique combines the versatility and sensitivity of deep‐level transient spectroscopy (DLTS) with the capability for defect analysis at high resolution of the scanning transmission electron microscope. This scanning DLTS method (SDLTS) is illustrated by observing Cu‐related defect centers in Ga1−xAlxAs epitaxial layers. A high sensitivity (3×1015 Cu defects cm−3 have been detected) and a spatial resolution of 2 μ or better illustrate the potential of the technique for the study of the electrical behavior of defects in semiconductor devices.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

ZnO/Si SAW convolver with surface‐controlling junctions

Y. Arimoto, T. Moriizumi, and T. Yasuda

Appl. Phys. Lett. 31, 63 (1977); http://dx.doi.org/10.1063/1.89591 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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A new type of ZnO/Si monolithic convolver has been constructed for the purpose of eliminating unstable memory effects due to the traps in ZnO or due to the SiO2/Si interface states. It has controlling p‐n junctions on the Si surface. It was experimentally verified that by varying the junctions bias, the convolution output can be controlled with a rapid response time and without any hysteresis. The applications of this device to a matched filter have been also demonstrated.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

N2 laser (1 bar) induced micro metal plasma capable of igniting combustible mixtures

W. Herden and W. H. Bloss

Appl. Phys. Lett. 31, 66 (1977); http://dx.doi.org/10.1063/1.89592 (2 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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On the surface of a Cu target irradiated by a uv N2 laser (TEA, pulse duration 300 ps, peak power 1 MW) a metallic plasma is generated due to the high brightness of the laser operating at atmospheric pressure. An interferometric study also using subnanosecond pulses from a N2 laser (1 bar) demonstrates the development of shock wave and plasma with high temporal and spatial resolution. The plasma with an initial pressure of 2000 bar and a temperature of 30 000 K is capable of igniting a combustible mixture of CH4‐O2. A new method for optical synchronization is well proved, delivering pictures as soon as 30 ns after plasma onset.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
82.33.Vx Reactions in flames, combustion, and explosions

High‐energy ions from a Nd‐laser‐produced plasma

R. Decoste and B. H. Ripin

Appl. Phys. Lett. 31, 68 (1977); http://dx.doi.org/10.1063/1.89593 (3 pages) | Cited 16 times

Online Publication Date: 26 August 2008

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Measurements of the asymptotic energy distribution of the different high‐energy ion species at Nd‐laser irradiance 1015–1016 W/cm2 on a CH2 planar target are presented and the acceleration mechanism of these high‐energy ions is discussed. Multipeak structure between 10 and 100 keV is observed on the H+ ion distribution. A disproportionate number of H+ ions with E/Z higher than the C+z ions is also observed.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Nc Particle measurements
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Coherent coupling of radiation to metal‐barrier‐metal structures by surface plasmons

D. P. Siu and T. K. Gustafson

Appl. Phys. Lett. 31, 71 (1977); http://dx.doi.org/10.1063/1.89594 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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It is shown that the coherent coupling of radiation into metal‐barrier‐metal structures by surface plasmons, which reduces to the usual antenna coupling at low frequencies, can be efficient up to a frequency at least as high as the plasma resonance.
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73.40.Rw Metal-insulator-metal structures
72.30.+q High-frequency effects; plasma effects
84.40.Ba Antennas: theory, components and accessories

Criteria for x‐ray superradiance

J. C. MacGillivray and M. S. Feld

Appl. Phys. Lett. 31, 74 (1977); http://dx.doi.org/10.1063/1.89595 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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This paper develops a set of criteria for superradiant emission in x‐ray systems. These new criteria, which must be satisfied in order to obtain efficient x‐ray emission, are given in the form of simple inequalities in terms of experimental parameters.
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32.30.Rj X-ray spectra
42.55.Ah General laser theory

Fiber‐optical interferometer

A. Simon and R. Ulrich

Appl. Phys. Lett. 31, 77 (1977); http://dx.doi.org/10.1063/1.89596 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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A rectangular optical waveguide of homogeneous refractive index (dimensions 0.10×0.14×100 mm3) is designed to provide double self‐imaging of either end face upon the opposite one. We show how to use this guide as a fiber‐optical beamsplitter and, with the addition of a mirror, as a two‐beam interferometer. The operation of the interferometer demonstrates the mutual coherence of the split images. Applications are possible for in‐line fiber‐optical interferometric devices.
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42.79.Gn Optical waveguides and couplers
07.60.Ly Interferometers
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors

Formation and quenching kinetics of ArF

M. Rokni, J. H. Jacob, J. A. Mangano, and R. Brochu

Appl. Phys. Lett. 31, 79 (1977); http://dx.doi.org/10.1063/1.89597 (4 pages) | Cited 32 times

Online Publication Date: 26 August 2008

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In this paper we report on the formation and quenching kinetics of ArF∗ (2Σ1/2). The ArF∗ is produced by irradiating mixtures of Ar and F2. The primary formation channel is via the recombination of Ar+ and Ar+2 with F−. Quenching of ArF∗ by F2 and Ar have been measured by analyzing the ArF∗ 2Σ1/2→2Σ1/2 fluorescence as a function of the F2 and Ar partial pressures. We have also measured the displacement of the Ar in ArF∗ by Kr and Xe to form KrF∗ and XeF∗, respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)

Laser emission from the 13.9‐μm 1000→0110 CO2 transition in pulsed electrical discharges

W. H. Kasner and L. D. Pleasance

Appl. Phys. Lett. 31, 82 (1977); http://dx.doi.org/10.1063/1.89598 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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Laser emission on the Q and P branches of the 1000→0110 transition of CO2 has been observed in a system using a cryogenically cooled pulsed electrical discharge as the excitation source. This is the first reported evidence that an inversion on this transition can be produced by direct electrical excitation of a gas mixture containing CO2. The inversion is created by using a delayed 10.6‐μm laser pulse to saturate the 1000 state. Parameter ranges for the system operating in an optimal CO2 : N2 : He=1 : 2 : 25 gas mixture are as follows: pressure, 5–18 Torr; temperature, 140–220 °K; time delay of 10.6‐μm laser pulse, 0.1–4 msec; and output energy, 15–20 μJ/pulse.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.60.+s Isotope separation and enrichment

Sealed TEA CO2 lasers with external control of gas chemistry

C. Willis, R. A. Back, and J. G. Purdon

Appl. Phys. Lett. 31, 84 (1977); http://dx.doi.org/10.1063/1.89599 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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The chemistry of gas mixtures for high‐power pulsed TEA CO2 lasers can be controlled by using a gas recirculation system which includes a device to recombine the CO and O2 formed by the discharge‐induced decomposition of the CO2. This gives low steady‐state levels of CO and O2 and eliminates laser failure due to excessive arcing. Lasers which normally fail after a few hundred pulses when sealed have been run with this system for approximately 106 pulses without failure. This development allows the use of isotopic mixtures of CO2 as laser media without impossibly high costs.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)

Self‐induced transparency in HF gas using an HF chemical laser

Lauren M. Peterson

Appl. Phys. Lett. 31, 86 (1977); http://dx.doi.org/10.1063/1.89600 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Self‐induced transparency (SIT) of HF laser radiation at λ 2.7 μm has been observed in low‐pressure HF gas for several P1(J) transitions. Low‐loss propagation through the resonantly absorbing medium was observed, and intensity threshold values for the onset of SIT were found to agree with those predicted by theory. Laser pulses of high peak power and/or long duration were found to break up into several individual 2π pulses. The resulting frequency of modulation in the output waveform was in quantitative agreement with theory and the damping of the modulation envelope was in agreement with the rotational relaxation time of the HF transition. Measurements showed that the velocity of propagation of the laser pulse through the HF gas at millitorr pressures was as little as 1/40 the speed of light in vacuum.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.60.By Design of specific laser systems
42.55.Ks Chemical lasers

A tunable multiple Stokes cw fiber Raman oscillator

R. K. Jain, Chinlon Lin, R. H. Stolen, and A. Ashkin

Appl. Phys. Lett. 31, 89 (1977); http://dx.doi.org/10.1063/1.89601 (2 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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A broadly tunable source of coherent cw radiation has been achieved by the use of a multiresonant cavity for multiple Stokes oscillation in a fused‐silica fiber Raman oscillator. Each order of tunable Stokes emission acts as a pump for the next higher order; a net tunability of several times the intrinsic Raman gain bandwidth is obtained. With 8 W of 5145‐Å pump radiation coupled into a 100‐m‐long single‐mode fiber, four orders of Stokes oscillation have been obtained, yielding over 350 Å of tuning in the 5200–5660‐Å spectral range.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.81.-i Fiber optics
42.70.Ce Glasses, quartz

New evidence on the quantum efficiency of Nd : YAG

C. J. Kennedy and J. D. Barry

Appl. Phys. Lett. 31, 91 (1977); http://dx.doi.org/10.1063/1.89575 (2 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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We have observed that the thermal loading in a pumped Nd : YAG laser rod is reduced by the action of stimulated emission. Preliminary results allow us to deduce that the quantum efficiency of the 4F3/2 upper laser level is 0.63±0.10.
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42.55.Rz Doped-insulator lasers and other solid state lasers

Low‐loss optical transmission through bent hollow metal waveguides

E. Garmire, T. McMahon, and M. Bass

Appl. Phys. Lett. 31, 92 (1977); http://dx.doi.org/10.1063/1.89576 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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The transmission of 10.6‐μm light in bent metal‐walled waveguides of rectangular cross section is described both theoretically and experimentally. It is shown that the bending loss per angle of bend in these waveguides is explicitly independent of waveguide height, bend radius, and light wavelength, depending only on the reflectivity of the waveguide walls. In confirming experiments, guides with aluminum walls showed 95% transmission per radian of bend for radii in the range from less than 1 cm to 1 m.
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42.79.Gn Optical waveguides and couplers
42.62.-b Laser applications

Generation of step tunable coherent radiation in the XUV by fifth‐order frequency mixing

C. Y. She and J. Reintjes

Appl. Phys. Lett. 31, 95 (1977); http://dx.doi.org/10.1063/1.89577 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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The generation of coherent radiation at four new frequencies (59.1, 62.6, 71.0, and 76.0 nm) in the XUV by fifth‐order frequency mixing of harmonics from a Nd : YAG laser is reported. The relative strength of the fifth‐order mixing processes in He and Ne is discussed. Comparison of fifth and third harmonic generation in He shows higher conversion to the fifth harmonic for sufficiently tight focusing.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.72.-g Optical sources and standards

A tunable 1.1‐μm fiber Raman oscillator

Chinlon Lin, R. H. Stolen, and L. G. Cohen

Appl. Phys. Lett. 31, 97 (1977); http://dx.doi.org/10.1063/1.89578 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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A tunable 1.1‐μm fiber Raman oscillator is reported. The oscillator is pumped by a cw mode‐locked Nd : YAG laser at 1.064 μm. Wavelength tuning is obtained by using group velocity dispersion in a 600‐m‐long single‐mode borosilicate fiber and subnanosecond pulses tunable from 1.101 to 1.125 μm are generated. The slope of the experimental tuning curve gives a group dispersion of 31 ps/nm km at 1.12 μm for the Raman fiber, in good agreement with the calculated value of combined material and waveguide dispersion.
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42.81.-i Fiber optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Efficient up‐conversion of 10.6‐μm radiation into the green spectral range

W. Jantz and P. Koidl

Appl. Phys. Lett. 31, 99 (1977); http://dx.doi.org/10.1063/1.89579 (3 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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Conversion of 10.6‐μm laser radiation into the spectral region of almost optimal photomultiplier performance is realized by nonlinear mixing of the infrared signal with a dye laser. Quantum conversion efficiencies exceeding 40% are obtained. This order‐of‐magnitude improvement of the up‐converter efficiency was achieved with a AgGaS2 crystal of only 5 mm length, because the noncritical collinear 90° type‐I phase‐matching geometry was realized.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.60.Gz Photodetectors (including infrared and CCD detectors)

An antenna‐coupled photovoltaic detector

Tien‐Lai Hwang and S. E. Schwarz

Appl. Phys. Lett. 31, 101 (1977); http://dx.doi.org/10.1063/1.89602 (4 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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An infrared receiving antenna has been used to couple 3.39‐μ radiation into an InSb photovoltaic detector. Use of antennas as noiseless collectors of radiation can potentially increase detectivity in many infrared detectors.
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84.40.Ba Antennas: theory, components and accessories
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Tunable DFB laser with fan‐shaped grating

A. Matsuda and S. Iizima

Appl. Phys. Lett. 31, 104 (1977); http://dx.doi.org/10.1063/1.89603 (2 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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Fan‐shaped grating whose period is continuously varied from 1950 to 2020 Å has been fabricated on the glass substrate by the holographic technique using photoresist and twisted mirrors and subsequent reactive sputter etching. A N2 laser pumped thin‐film dye laser has been constructed with dye‐doped polyurethane film coated on the glass substrate which has the fan‐shaped‐grating corrugation on its surface. It has been able to generate the laser light of the wavelength ranging from 5861 to 6071 Å.
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42.79.Dj Gratings
42.55.Mv Dye lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Threshold power density measurements for electron‐beam sustained discharge excitation of XeF and KrF

Charles H. Fisher and Robert E. Center

Appl. Phys. Lett. 31, 106 (1977); http://dx.doi.org/10.1063/1.89604 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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Threshold power densities for electron‐beam‐stabilized discharge excitation of XeF and KrF lasers are reported for Ar+Kr+F2 and Ar+Xe+NF3 gas mixtures at 1 atm. Stable discharges were obtained with these gas mixtures for times greater than 0.5 μsec with lasing pulse width as long as 0.5 μsec. An analysis of data for several different pump power densities is presented which indicates that the threshold pump power density varies inversely with the cavity buildup time.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Electrochromism in the composite material Au‐WO3

E. K. Sichel, J. I. Gittleman, and J. Zelez

Appl. Phys. Lett. 31, 109 (1977); http://dx.doi.org/10.1063/1.89605 (3 pages) | Cited 22 times

Online Publication Date: 26 August 2008

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We have produced for the first time an electrochromic cermet composed of Au grains dispersed in the electrochromic WO3. The electrochromism arises from a shift in the wavelength of the dielectric absorption characteristic of gold cermets. The shift is due to a change in the dielectric constant of the WO3 matrix as a result of the coloring process. This is to be contrasted with the coloring in pure WO3 which results from the appearance of a broad absorption band in the red and infrared.
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42.70.-a Optical materials
81.05.Mh Cermets, ceramic and refractory composites
77.55.-g Dielectric thin films
75.20.Ck Nonmetals

Single longitudinal mode operation of diode lasers

D. R. Scifres, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 31, 112 (1977); http://dx.doi.org/10.1063/1.89606 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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We report single longitudinal mode operation of conventional double‐heterostructure GaAs/GaAlAs diode lasers achieved by heavy p‐type doping of the active region. At 77 °K a broad‐area device pumped with a rectangular current pulse exhibited single longitudinal mode operation up to 2.8 times threshold, which was the limit of the pulser. With a triangular pumping pulse at 300 °K, the same laser ran single longitudinal mode up to 1.4 times threshold. We believe these results can be explained by the absence of hole injection, which eliminates spatial hole burning caused by the slowly diffusing injected holes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
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