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15 Jul 1977

Volume 31, Issue 2, pp. 53-137

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The effect of electron‐beam aluminization on the Si‐sapphire interface

Alvin M. Goodman and Charles E. Weitzel

Appl. Phys. Lett. 31, 114 (1977); http://dx.doi.org/10.1063/1.89607 (4 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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We have used extended‐range MIS C (V) measurements of Al‐sapphire‐Si capacitor structures to study the effect of metallization in an e‐beam (electron‐beam) evaporator on the Si‐sapphire interface. Our results show that (1) this step causes the development of positive charge at or near the Si‐sapphire interface, and (2) the charge is partially but not entirely removed by annealing at 400 °C in forming gas. We believe that the observed positive charge is due to (1) generation of electron‐hole pairs in the sapphire by ionizing radiation (probably soft x rays) emanating from the e‐beam evaporation unit, and (2) more effective trapping of holes than electrons within the sapphire. These results have important implications for CMOS/SOS technology.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Cb X-ray effects
85.30.Tv Field effect devices

Raman scattering and zone‐folding effects for alternating monolayers of GaAs‐AlAs

J. L. Merz, A. S. Barker, and A. C. Gossard

Appl. Phys. Lett. 31, 117 (1977); http://dx.doi.org/10.1063/1.89608 (3 pages) | Cited 29 times

Online Publication Date: 26 August 2008

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Raman scattering results have been obtained from alternating monolayer structures of GaAs and AlAs fabricated synthetically by molecular beam epitaxy. Frequency shifts of the principal phonons have been observed, as well as new vibrational modes which result from zone‐folding effects. The results suggest that ∼20–30% of the cation sites in the interface regions are disordered.
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78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
68.55.-a Thin film structure and morphology
75.20.Ck Nonmetals

Switching of GaAs IMPATT diode oscillator by optical illumination

H. W. Yen, M. K. Barnoski, R. G. Hunsperger, and R. T. Melville

Appl. Phys. Lett. 31, 120 (1977); http://dx.doi.org/10.1063/1.89581 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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A study was made of the microwave oscillaton characteristics of GaAs IMPATT diodes under external optical illumination. It was found that depending on the diode’s bias condition, the frequency of oscillation and the intensity of illumination, the IMPATT microwave output power can be either enhanced or reduced.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
42.62.-b Laser applications
84.40.Lj Microwave integrated electronics

Large‐optical‐cavity GaAs‐ (GaAl)As injection laser with low‐loss distributed Bragg reflectors

Hirofumi Namizaki, Mohammad Kazem Shams, and Shyh Wang

Appl. Phys. Lett. 31, 122 (1977); http://dx.doi.org/10.1063/1.89582 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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A large‐optical‐cavity injection laser with low‐loss distributed Bragg reflectors has been realized. The temperature dependence of threshold current and of lasing wavelength clearly showed the DBR mode of operation. At room temperature, the lowest threshold current density thus far achieved was 7 kA/cm2. A coupling coefficient of around 50 cm−1 was estimated from the spectral bandwidth and from the intensity distribution of light scattered from the DBR region.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices

Large‐area uniform growth of 〈100〉 Si through Al film by solid epitaxy

G. Majni and G. Ottaviani

Appl. Phys. Lett. 31, 125 (1977); http://dx.doi.org/10.1063/1.89583 (2 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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Epitaxial and uniform growth of a 0.6‐μm‐thick silicon layer was obtained in large areas at 530 °C by the dissolution and transport of an evaporated Si layer through an Al film using the Si/Al (evaporated)Si (evaporated) structure. Channeling measurements showed that the grown Si layers are well ordered and epitaxial with the underlying 〈100〉 substrate. The lateral uniformity is verified by scanning electron microscopy and electron microprobe measurements. Electrical measurements indicate that the grown layer is p type with 2×1018 cm−3 hole concentration and 65 cm2/V sec Hall mobility.
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68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Dynamic simulation of normal zone evolution in a superconducting composite

W. Y Chen and J. R. Purcell

Appl. Phys. Lett. 31, 127 (1977); http://dx.doi.org/10.1063/1.89584 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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A numerical procedure has been implemented to dynamically simulate the evolution of a normal zone in a superconducting composite. The model has the nucleate/film boiling heat transfer of helium, the effect of current sharing, the conduction at the zone ends, and the temperature variation of the thermal conductivity and specific heat taken into consideration. Limiting recovery current density JL and heat flux QL are calculated. It was discovered that QL approaches 0.28 W/cm2 for long zones regardless of the conductor cooling surface to cross section ratio P/A, but can be much higher for short zones.
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85.25.-j Superconducting devices
02.60.Cb Numerical simulation; solution of equations
44.30.+v Heat flow in porous media

Effects of 30‐GeV‐proton irradiation on the critical currents of NbTi multifilament wire

C. L. Snead, L. Nicolosi, and W. Tremel

Appl. Phys. Lett. 31, 130 (1977); http://dx.doi.org/10.1063/1.89585 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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Multifilamentary wires of NbTi have been irradiated at 4.2 K with 30‐GeV protons and the changes in critical current Ic measured in situ in fields up to 4 T. Reductions of Ic of 20% were found for a fluence of 1.5×1018 p/cm2. Annealing to room temperature recovers 60–70% of the Ic degradation. The decrease in Ic is attributed to an increase in the Ginzburg‐Landau parameter κ of cell cores relative to the dislocation cell walls, thereby lowering the pinning strength of the cell walls. This increase in κ is directly related to an increasing radiation‐induced normal‐state resistivity. A saturation of the decreases in Ic is indicated for low‐temperature proton irradiation in keeping with an observed saturation following high‐fluence ambient‐temperature neutron irradiation. Evidence is presented indicating that multiple annealing over the fluence life of a NbTi magnet operating in a radiation field will minimize the accumulated reduction in Ic.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
85.25.-j Superconducting devices
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
61.80.Jh Ion radiation effects

Bubble motion at small drive fields

B. Barbara, J. Magnin, and H. Jouve

Appl. Phys. Lett. 31, 133 (1977); http://dx.doi.org/10.1063/1.89586 (2 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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Bubble translations carried out at small drive fields show a dependence of the minimum gradient amplitude needed for a motion as a function of its duration. The phenomenon can be described in terms of an activated process, with an activation energy inversely proportional to the gradient field. This law is interpreted by using a model where the motion is accomplished through bubble surface variations.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ch Domain walls and domain structure

Ink jet printing nozzle arrays etched in silicon

E. Bassous, H. H. Taub, and L. Kuhn

Appl. Phys. Lett. 31, 135 (1977); http://dx.doi.org/10.1063/1.89587 (3 pages) | Cited 28 times

Online Publication Date: 26 August 2008

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Ink jet printing nozzle arrays in the form of truncated pyramidal holes anisotropically etched into a silicon substrate have been fabricated. Eight‐nozzle arrays dixplay excellent performance characteristics with regard to uniformity of direction (<± 1mra), velocity (<± 10 cm/sec) at 1000–3000 cm/sec), and drop formation.
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47.60.Kz Flows and jets through nozzles
47.27.wg Turbulent jets
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
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