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1 Aug 1977

Volume 31, Issue 3, pp. 139-241

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High‐efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition

R. D. Dupuis, P. D. Dapkus, R. D. Yingling, and L. A. Moudy

Appl. Phys. Lett. 31, 201 (1977); http://dx.doi.org/10.1063/1.89647 (3 pages) | Cited 28 times

Online Publication Date: 26 August 2008

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High‐efficiency GaAlAs/GaAs heterostructure solar cells have been grown by metalorganic chemical vapor deposition (MO−CVD). Simulated air‐mass‐zero (AM0) short‐circuit current densities of 24.5 mA/cm2, open‐circuit voltages of 0.99 V, fill factors of 0.74, and efficiencies of 12.8% have been measured on devices without AR coatings (uncorrected for contact area). These cell structures employ a thin (∼520Å) GaAlAs : Zn window and a GaAs : Zn/GaAs : Se p‐n junction grown entirely by the MO‐CVD process.
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84.60.Jt Photoelectric conversion
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

The origin of large dark spots in AlxGa1−xAs‐GaAs heterostructure photoluminescence

C. H. Henry and R. A. Logan

Appl. Phys. Lett. 31, 203 (1977); http://dx.doi.org/10.1063/1.89648 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Large dark spots are explained in terms of current flow in heterojunctions and surface recombination. A theory of the photoluminescence line shape is presented and verified by experiment.
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85.60.Jb Light-emitting devices
78.40.Fy Semiconductors

The suppression of internally circulating modes in (GaAl)As/GaAs heterostructure lasers and their effect on catastrophic degradation and efficiency

G. D. Henshall

Appl. Phys. Lett. 31, 205 (1977); http://dx.doi.org/10.1063/1.89649 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Premature catastrophic degradation in sawn‐cavity (GaAl)As/GaAs heterostructure lasers can be attributed to the presence of internally circulating modes. When lasers were selected for good near‐field uniformity and assumed freedom from internally circulating modes, good agreement was obtained between the power at catastrophic degradation and the effective optical width perpendicular to the junction.
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42.55.Px Semiconductor lasers; laser diodes

Extrinsic photoconductivity in high‐resistivity GaAs doped with oxygen

E. H. Tyler, M. Jaros, and Claude M. Penchina

Appl. Phys. Lett. 31, 208 (1977); http://dx.doi.org/10.1063/1.89650 (3 pages) | Cited 17 times

Online Publication Date: 26 August 2008

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We report photoconductivity measurements on melt‐grown high‐resistivity GaAs : O, taken at 80, 190, 275, and 295 K. The data are shown consistent with a model involving an impurity‐to‐conduction band transition. The impurity binding energy is found at 0.69 eV from the conduction band, at 0 K. This energy decreases with increasing temperature. The data also indicate a Franck‐Condon shift of 0.14 eV and a center of axial or lower symmetry. These results enable us to link our observations to earlier reports on GaAs : O and to conclude that they all refer to the ’’0.75‐eV’’ center associated with the presence of oxygen.
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72.40.+w Photoconduction and photovoltaic effects
78.40.Fy Semiconductors

In1−xGaxAs‐GaSb1−yAsy heterojunctions by molecular beam epitaxy

H. Sakaki, L. L. Chang, R. Ludeke, Chin‐An Chang, G. A. Sai‐Halasz, and L. Esaki

Appl. Phys. Lett. 31, 211 (1977); http://dx.doi.org/10.1063/1.89609 (3 pages) | Cited 100 times

Online Publication Date: 26 August 2008

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Smooth films of n‐In1−xGaxAs and p‐GaSb1−yAsy were grown by molecular beam epitaxy. As a function of the compositions, x and y, the lattice constants vary linearly while the energy gaps show a downward bowing. Abrupt heterojunctions made of these alloys with close lattice matching exhibit a series of current‐voltage characteristics which change from rectifying to Ohmic as x and y are reduced. The relative location of the band‐edge energies of the two semiconductors at the interface is shown to account for the unusual characteristics observed experimentally.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ei Rectification
68.55.-a Thin film structure and morphology

Thermally converted surface layers in semi‐insulating GaAs

W. Y. Lum and H. H. Wieder

Appl. Phys. Lett. 31, 213 (1977); http://dx.doi.org/10.1063/1.89610 (3 pages) | Cited 22 times

Online Publication Date: 26 August 2008

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Charge carrier transport in thermally converted surface layers in semi‐insulating GaAs depends on the generation, diffusion, and occupancy of Ga and As vacancies. The amphoteric nature of C in GaAs can significantly alter the density and the distribution of donors and acceptors in the vicinity of the specimen surface and the surface layer may become either p type or n type depending on the thermal treatment conditions.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.25.+i Surface conductivity and carrier phenomena
81.40.Rs Electrical and magnetic properties related to treatment conditions
78.40.Fy Semiconductors

Current and C‐V instabilities in SiO2 at high fields

P. M. Solomon and J. M. Aitken

Appl. Phys. Lett. 31, 215 (1977); http://dx.doi.org/10.1063/1.89611 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

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Results have been obtained concerning the interrelation of current and C‐V instabilities in MOS capacitors subjected to negative gate high‐field pulsing. Rising current transients and negative C‐V shifts both show the formation of positive charge in the oxide. However, this charge appears to be situated close to the electrodes rather than in the bulk of the oxide and the temperature dependence of the rate of charge accumulation near the electrodes is different for the aluminum and silicon electrodes. These results indicate that the current instabilities and C‐V shifts appear to result from independent mechanisms.
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72.20.Ht High-field and nonlinear effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Evaluation of the threshold voltage for short‐channel MOSFET’s

Masanori Nishida

Appl. Phys. Lett. 31, 217 (1977); http://dx.doi.org/10.1063/1.89612 (3 pages)

Online Publication Date: 26 August 2008

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It has been well known that in a long‐channel MOSFET, the experimental value of the threshold voltage obtained by the square‐root extrapolation method in the saturation region agrees well with the theoretical criterion. In a short‐channel MOSFET, the so‐determined threshold voltage depends on the drain voltage because of the drain current dependence on the drain voltage VDS. In this letter, a new method to determine the threshold voltage for VDS=0 V will be discussed.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Low‐noise millimeter‐wave mixer diodes prepared by molecular beam epitaxy (MBE)

M. V. Schneider, R. A. Linke, and A. Y. Cho

Appl. Phys. Lett. 31, 219 (1977); http://dx.doi.org/10.1063/1.89613 (3 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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Schottky barrier diodes which are specifically designed for use in cryogenically cooled millimeter‐wave mixers have been fabricated from MBE layers grown on heavily doped GaAs substrates. At 15 K the devices show a nearly exponential current‐voltage characteristic and a diode noise temperature which is determined predominantly by the tunneling transport mechanism. A diode noise temperature as low as 55 K was achieved under pumped conditions. This is the lowest diode noise temperature ever obtained in a resistive mixer. A single sideband mixer noise temperature of 315 K was measured at 102 GHz for a cryogenic mixer employing these diodes.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions

Infrared response of lightly doped Schottky diodes

Keith S. Champlin and Gadi Eisenstein

Appl. Phys. Lett. 31, 221 (1977); http://dx.doi.org/10.1063/1.89614 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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The traditional hf model of a Schottky diode has been extended to include skin effect, carrier inertia, and displacement current. Above the plasma frequency, results differ considerably from those of the traditional model. The extended model helps understand recently reported detection of 10.6‐μ radiation with Ge diodes doped to only 1016 cm−3.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

GaAs directional‐coupler switch with stepped Δβ reversal

F. J. Leonberger and C. O. Bozler

Appl. Phys. Lett. 31, 223 (1977); http://dx.doi.org/10.1063/1.89615 (4 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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A GaAs electro‐optic waveguide switch in which the power isolation in both switch states can be electrically optimized has been demonstrated. The devices exhibit up to 25‐dB power isolation in both states, with total power output constant to within ⩽0.3 dB. The device is formed on one chip and consists of two equal‐length directional‐coupler switches in series separated by a 25‐μm gap. This structure permits the sign of Δβ, the electro‐optically induced propagation constant difference between the guides, to be reversed midway along the device length. The loss associated with propagation across the waveguide gap is small (⩽0.2 dB), suggesting that similar gaps could be used to electrically isolate waveguide devices on a common substrate in future GaAs‐based integrated optical circuits.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects

Niobium point‐contact Josephson‐junction behavior at 604 GHz

D. A. Weitz, W. J. Skocpol, and M. Tinkham

Appl. Phys. Lett. 31, 227 (1977); http://dx.doi.org/10.1063/1.89616 (3 pages) | Cited 17 times

Online Publication Date: 26 August 2008

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We have measured the ac Josephson effect in Nb point contacts at 604 GHz (496 μm). We find the coupling of the far‐infrared radiation to the point contact to depend in a simple manner on the resistance of the contact. The behavior of the high‐resistance point contacts (50⩽R⩽200 Ω) is very reproducible, allowing a quantitative comparison of the data to the frequency‐dependent Werthamer theory. We also account for the effects of noise and heating and compare these to Tinkham’s heating theory.
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74.50.+r Tunneling phenomena; Josephson effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.-j Superconducting devices

Stress effect on Ic of multifilamentary V3Ga wire

D. U. Gubser, T. L. Francavilla, D. G. Howe, and L. D. Jones

Appl. Phys. Lett. 31, 230 (1977); http://dx.doi.org/10.1063/1.89617 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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Measurement of stress effects on the critical current Ic of multifilament V3Ga wire are reported, and the cryostat for performing these studies is described. Measurements were taken at 4.2 K in a magnetic field of 9.0 T and for stress values up to 5×108 Pa. Noticeable degradation of Ic did not begin in the wires reported here until stress values of 3.0×108 Pa. The first effect of stress was to produce a measurable resistance in the wire below Ic. A discussion of this low‐current onset of resistance is given which suggests that improved stress characteristics in A15 wires may correlate with the reduction or elimination of this resistance.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
62.20.M- Structural failure of materials

Critical currents in sputtered copper molybdenum sulphide

Samuel A. Alterovitz, John A. Woollam, Lee Kammerdiner, and Huey‐Lin Luo

Appl. Phys. Lett. 31, 233 (1977); http://dx.doi.org/10.1063/1.89618 (2 pages) | Cited 16 times

Online Publication Date: 26 August 2008

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Critical currents in a sputtered Chevrel‐phase copper molybdenum sulphide have been measured at 4.2 K as a function of applied magnetic field. Self‐field critical‐current values up to 109 A/m2 were found, decreasing to 108 A/m2 at 3 T. Graphs of pinning forces versus field were found to be independent of field direction, and the pinning mechanism is sample independent. Critical‐current densities for sputtered lead molybdenum sulphide are estimated to be ≳108 A/m2 at 26 T based on a scaling law for pinning.
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74.25.Sv Critical currents
74.70.-b Superconducting materials other than cuprates
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Bubble‐collapse and stripe‐chop mechanism in magnetic bubble garnet materials

Timothy J. Gallagher and Floyd B. Humphrey

Appl. Phys. Lett. 31, 235 (1977); http://dx.doi.org/10.1063/1.89619 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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The mechanism by which bubble domains collapse and stripe domains chop has been observed in magnetic bubble garnet materials. Single 10‐nsec‐exposure transient pictures taken during the collapse process show that the mechanism of stripe chop and bubble collapse is dominated by the formation of a head‐on wall structure which is nucleated, presumably at one surface, and propagates through the film. In collapsing bubbles, the structure can form before the unstable equilibrium radius is reached. For long stripes in both implanted and as‐grown films, it does not form uniformly along the stripe; thus, sections of stripe will chop to form bubbles. The head‐on wall structure is statically unstable and can only persist for tenths of microseconds.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)

Empirical estimation of Faraday rotation in some rare‐earth iron garnets

R. Krishnan

Appl. Phys. Lett. 31, 237 (1977); http://dx.doi.org/10.1063/1.89620 (2 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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From experimental data available for pure rare‐earth iron garnets (RIG) an empirical method of estimating Faraday rotation (FR) in some mixed rare‐earth iron garnets is proposed. First, the Fe3+ contribution to FR is extracted from YIG. From this value and from FR data available for several RIG, one is able to separate the contribution from different RE ions. Finally, FR in mixed rare‐earth iron garnets is calculated using simple scaling and results compared with data available in the literature. The agreement obtained is quite encouraging.
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78.20.Ls Magneto-optical effects
78.20.Fm Birefringence
75.50.Gg Ferrimagnetics

Measurement of hydrogen depth distribution by resonant nuclear reactions

C. A. Barnes, J. C. Overley, Z. E. Switkowski, and T. A. Tombrello

Appl. Phys. Lett. 31, 239 (1977); http://dx.doi.org/10.1063/1.89621 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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The resonance at E (19F) =6.42 MeV in the reaction 1H(19F,αγ)16O has been explored as a potentially useful method for the quantitative determination of hydrogen concentration as a function of depth in a solid substrate. The relative merits of this resonance, the 16.44‐MeV resonance in the same reaction, and the 6.39‐MeV resonance in the reaction 1H(15N,αγ)12C are discussed.
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82.80.Jp Activation analysis and other radiochemical methods
28.50.-k Fission reactor types
FREE

Erratum: Energy threshold effects in the collisionless dissociation of polyatomic molecules by ir laser radiation

Malcolm C. Gower and Kenneth W. Billman

Appl. Phys. Lett. 31, 241 (1977); http://dx.doi.org/10.1063/1.89810 (1 page)

Online Publication Date: 26 August 2008

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Abstract Unavailable
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99.10.Cd Errata
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
82.50.Hp Processes caused by visible and UV light
33.80.Gj Diffuse spectra; predissociation, photodissociation
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