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Applied Physics Letters / Volume 31 / Issue 4
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Appl. Phys. Lett. 31, 292 (1977); http://dx.doi.org/10.1063/1.89674 (3 pages)

Reversible conductivity changes in discharge‐produced amorphous Si

D. L. Staebler and C. R. Wronski

RCA Laboratories, Princeton, New Jersey 08540

A new reversible photoelectronic effect is reported for amorphous Si produced by glow discharge of SiH4. Long exposure to light decreases both the photoconductivity and the dark conductivity, the latter by nearly four orders of magnitude. Annealing above 150 °C reverses the process. A model involving optically induced changes in gap states is proposed. The results have strong implications for both the physical nature of the material and for its applications in thin‐film solar cells, as well as the reproducibility of measurements on discharge‐produced Si.

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KEYWORDS and PACS

Keywords

SILICON, AMORPHOUS STATE, ELECTRIC CONDUCTIVITY, GLOW DISCHARGES, PHOTOCONDUCTIVITY, ANNEALING, ENERGY GAP, ELECTRONIC STRUCTURE, SOLAR CELLS, FILMS, EFFICIENCY, DOPED MATERIALS, PERFORMANCE

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.89674

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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