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15 Aug 1977

Volume 31, Issue 4, pp. 243-309

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Rapid oxygen diffusion in Ca‐doped yttrium iron garnet films at 25 to 250 °C

R. C. LeCraw, E. M. Gyorgy, R. D. Pierce, J. W. Nielsen, S. L. Blank, D. C. Miller, and R. Wolfe

Appl. Phys. Lett. 31, 243 (1977); http://dx.doi.org/10.1063/1.89667 (2 pages) | Cited 17 times

Online Publication Date: 26 August 2008

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Unexpectedly rapid oxygen diffusion has been observed at 25–250 °C in YIG films with uncompensated Ca additions of 0.1 to 0.23 atoms per formula unit. A 3‐μm‐thick film originally dark and conducting due to Fe4+ lightened and became insulating in 15 min at 100 °C in a reducing saturated solution of FeCl2. A diffusion distance of ∼0.5 mm has been observed along a film in 25 h at 250 °C. A model is proposed based on the dependence of the diffusion coefficient D on oxygen vacancy concentration. A magnetic bubble garnet film containing Ca, which also lightened at 250 °C, showed no observable changes in the pertinent bubble parameters.
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75.50.Gg Ferrimagnetics
66.30.Lw Diffusion of other defects
68.60.-p Physical properties of thin films, nonelectronic
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Magnetoelastic surface wave propagation in a low‐anisotropy rare‐earth–iron compound at 80 MHz

D. C. Webb, K. L. Davis, N. C. Koon, and A. K. Ganguly

Appl. Phys. Lett. 31, 245 (1977); http://dx.doi.org/10.1063/1.89668 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Propagation of 80‐MHz surface acoustic waves on a single‐crystal substrate of Ho0.58Tb0.20Dy0.22Fe2 in the presence of a magnetic field is reported. Phase velocity changes of 2%, accompanied by attenuation changes in excess of 30 dB, have been observed by varying the applied magnetic field. Measurements of velocity and attenuation variation with field magnitude and direction are presented along with qualitative explanations of the observed experimental behavior.
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75.80.+q Magnetomechanical effects, magnetostriction
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
43.35.Pt Surface waves in solids and liquids

The equivalent gap alteration by the scattering caused by acoustic domains in CdS

Tomonobu Hata, Humio Iwahashi, Hiroyuki Washioka, and Toshio Hada

Appl. Phys. Lett. 31, 247 (1977); http://dx.doi.org/10.1063/1.89669 (3 pages)

Online Publication Date: 26 August 2008

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An acoustic domain in CdS crystals scatters a radiated optical beam near the intrinsic absorption edge. This paper presents work showing that the equivalent band‐gap alteration caused by the scattering effect is observed in 600–1000‐μm‐thick samples. This alteration is caused by the following: (i) In the CdS crystal the optical transmission of incident light with e∥c is larger than that for incident light with e⊥c (e: polarization of the incident light; c: c axis of the crystal). (ii) When the incident light is scattered by the shear acoustic wave in the sample, the plane of polarization is rotated by 90°. Therefore, the incident light with e⊥c behaves as if it were e∥c and the optical transmission increases.
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72.50.+b Acoustoelectric effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Anomalous dielectric behavior and reversible pyroelectricity in roller‐quenched LiNbO3 and LiTaO3 glass

A. M. Glass, M. E. Lines, K. Nassau, and J. W. Shiever

Appl. Phys. Lett. 31, 249 (1977); http://dx.doi.org/10.1063/1.89670 (3 pages) | Cited 86 times

Online Publication Date: 26 August 2008

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Vitreous LiNbO3 and LiTaO3 have been prepared by roller quenching these compositions from the melt. The transparent glasses exhibit pronounced dielectric anomalies with peaks of ϵ≳105 close to the crystallization temperature which are not characteristic of the crystalline phase. Pyroelectricity is induced after cooling the glass in an electric field. The data are discussed in terms of a simple theoretical model for amorphous ferroelectricity and interfacial polarization due to localized ionic motion.
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77.70.+a Pyroelectric and electrocaloric effects
81.05.Kf Glasses (including metallic glasses)
77.80.-e Ferroelectricity and antiferroelectricity

Diffusion of fast electrons in the presence of a magnetic field

J. H. Jacob

Appl. Phys. Lett. 31, 252 (1977); http://dx.doi.org/10.1063/1.89671 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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The Bethe Age diffusion solution for high‐energy electrons in the presence of a magnetic field is derived. The electron transport in the presence of a magnetic field can generally be separated into diffusion along and perpendicular to the field direction. This result is similar to diffusion of a plasma in a magnetic field. However, unlike plasma diffusion, the energy of the fast electrons is retained as the independent variable.
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42.55.Ah General laser theory
41.75.Fr Electron and positron beams
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Investigation of atomic clustering in aged metallic glasses using positron annihilation methods

H. S. Chen and S. Y. Chuang

Appl. Phys. Lett. 31, 255 (1977); http://dx.doi.org/10.1063/1.89672 (2 pages) | Cited 21 times

Online Publication Date: 26 August 2008

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The positron lifetime τ1 of Pd77.5Cu6Si16.5, Fe75P16B6Al3, and Ni75P16B6Al3 glass increases from ∼170 ps to a plateau value ∼175 ps immediately following an anneal at 350 K for 30 min. With further annealing above 500 K, τ1 decreases and approaches ∼165 ps. Possible atomic clustering in metallic glasses during structural relaxation will be described.
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78.70.Bj Positron annihilation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.43.Fs Glasses
61.43.-j Disordered solids

Compensation from implantation damage in InP

D. Eirug Davies, J. P. Lorenzo, and M. L. Deane

Appl. Phys. Lett. 31, 256 (1977); http://dx.doi.org/10.1063/1.89673 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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Compensation arising from ion damage has been investigated in InP. It is found that ≳10 times the irradiation that produces resistive layers in GaAs is required to similarly compensate InP. The damage anneals in two stages indicating that two distinct defects contribute to the carrier removal process. Partial annealing at ∼400 °C rather than at 500 °C as in GaAs is suggested as a means of producing low‐absorption highly resistive layers. From compensation considerations annealing to at least 550 °C will be required for dopant implantations if effective electrical utilization is to be achieved.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation

A model for surface layer composition changes in sputtered alloys and compounds

P. K. Haff

Appl. Phys. Lett. 31, 259 (1977); http://dx.doi.org/10.1063/1.89652 (2 pages) | Cited 34 times

Online Publication Date: 26 August 2008

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Under the assumption that extracted beam energy is quickly shared among secondary cascade members of all masses, we present a model which accounts quantitatively for recently observed equilibrium surface enrichments in heavy atoms following ion bombardment of alloys and compounds. Assuming strong radiation‐driven diffusion, effects of which are directly observed, and given the time required to reach equilibrium, we can calculate the thickness Δx of the enriched layer. Alternatively, knowing Δx, a calculation of the equilibration time constant is possible.
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66.30.Fq Self-diffusion in metals, semimetals, and alloys
81.90.+c Other topics in materials science (restricted to new topics in section 81)

Characteristics of high‐field preionized discharges for transversely excited waveguide lasers

R. K. Jain, O. R. Wood II, P. J. Maloney, and P. W. Smith

Appl. Phys. Lett. 31, 260 (1977); http://dx.doi.org/10.1063/1.89653 (4 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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We have investigated the role of the preionization cathode material and the preionization energy in high‐field preionized discharges of a CO2 laser mixture at atmospheric pressure. Independent control of both the E/p and the input energy is demonstrated over a large range of values. These results are applicable to the design of waveguide lasers and other types of gas‐discharge devices.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.-s Electric discharges

Geodesic lenses in single‐mode LiNbO3 waveguides

Bor‐Uei Chen, Emanuel Marom, and Archie Lee

Appl. Phys. Lett. 31, 263 (1977); http://dx.doi.org/10.1063/1.89654 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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A waveguide geodesic lens formed in a single‐mode Ti‐diffused LiNbO3 waveguide is reported. The paraxial focal length of the geodesic lens fabricated was 1.1 cm. In addition, a novel technique for ultrasonic impact grinding of profiles of arbitrary shape was developed. The paper describes the first single‐mode geodesic lens fabricated in a LiNbO3 substrate.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
42.79.Gn Optical waveguides and couplers

Electrically active optical bifurcation: BOA

M. Papuchon, Am. Roy, and D. B. Ostrowsky

Appl. Phys. Lett. 31, 266 (1977); http://dx.doi.org/10.1063/1.89655 (2 pages) | Cited 26 times

Online Publication Date: 26 August 2008

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We report the realization of an electro‐optical switch based on the interference between modes in a two‐mode waveguide (equivalent to a directional coupler with no gap between the guides). Switching is achieved by uniformly changing the refractive index of the guide. This permits attaining the two switching states even in the presence of fabrication errors, with a very simple electrode configuration. Crosstalks of −16 and −18 dB for command voltages of 8 and −18 V have been obtained for such a structure realized in Ti : diffused lithium niobate.
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42.79.-e Optical elements, devices, and systems
78.20.Jq Electro-optical effects

Collisional transitions obeying nondipolar selection rules between M levels of FCN, a laser‐microwave double‐resonance study

Harold Jones

Appl. Phys. Lett. 31, 268 (1977); http://dx.doi.org/10.1063/1.89656 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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Two Stark components of the R (2) transition of the ν1 band of FCN were tuned into resonance with the R (20) 9.4‐μm CO2 laser line. From consideration of the collisionally induced double‐resonance signals observed in the microwave spectrum, it was concluded that ΔJ=0, ΔM=±1 nondipolar collisional transitions occur with a frequency similar to that of the dipole‐allowed ΔJ=±1, ΔM=±1 collisional transitions.
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33.40.+f Multiple resonances (including double and higher-order resonance processes, such as double nuclear magnetic resonance, electron double resonance, and microwave optical double resonance)
33.55.+b Optical activity and dichroism
33.57.+c Magneto-optical and electro-optical spectra and effects

A high‐power tunable laser for the 9–12.5‐μm spectral range

F. O’Neill and W. T. Whitney

Appl. Phys. Lett. 31, 270 (1977); http://dx.doi.org/10.1063/1.89657 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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We have demonstrated continuous tunability of a high‐pressure molecular gas laser over portions of the 9–12.5‐μm spectral range. The laser employs electron‐beam‐controlled multiatmosphere discharges in He : N2 : CO2, He : CO : N2O, or He : CO : CS2. The high‐pressure CS2 laser is continuously tunable in the 12.1‐μm region which is relevant for laser separation of uranium isotopes.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.60.+s Isotope separation and enrichment

Submillimeter‐wave laser operating in a passive Q‐switched intracavity pump mode

Gerhard A. Koepf

Appl. Phys. Lett. 31, 272 (1977); http://dx.doi.org/10.1063/1.89658 (2 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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Pulsed operation of submillimeter gas lasers was achieved with the laser gas inside the resonator of the CO2 pump laser acting as a saturable absorber for passive Q switching the CO2 laser. With a metal‐oxyde‐metal whisker detector 1–5‐μs‐wide pulses could be detected at 118, 373, and 496 μm wavelength.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

A method for focusing scattered energy in laser fusion

Gregory A. Kriegsmann

Appl. Phys. Lett. 31, 274 (1977); http://dx.doi.org/10.1063/1.89659 (3 pages)

Online Publication Date: 26 August 2008

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When a laser beam impinges upon a plasma pellet, a sizeable portion of the incident energy is scattered away. This refraction is primarily caused by the electron density gradient. However, by enclosing the pellet in a metal cavity some of the scattered energy can be focused back into the plasma. When the electron density is spherically symmetric, overdense, and sufficiently steep, an optimal cavity can be constructed. This cavity transforms the scattered wave into a converging spherical wave. This wave penetrates up to the critical surface and according to the classical theory should give the most absorption.
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52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
42.15.Dp Wave fronts and ray tracing
52.50.Gj Plasma heating by particle beams

Broad‐band grating filters for thin‐film optical waveguides

C. S. Hong, J. B. Shellan, A. C. Livanos, A. Yariv, and A. Katzir

Appl. Phys. Lett. 31, 276 (1977); http://dx.doi.org/10.1063/1.89660 (3 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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Broad‐band grating filters have been fabricated on glass thin‐film waveguides and evaluated with a tunable dye laser. Measured and calculated filter responses were found to be in good agreement. Grating filters with bandwidths of 300 and 150 Å, and reflectivities of 18 and 40%, respectively, are reported.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.82.-m Integrated optics

Laser‐induced resonances in high n states of hydrogen‐like 19F8+

J. D. Silver, N. A. Jelley, and L. C. McIntyre

Appl. Phys. Lett. 31, 278 (1977); http://dx.doi.org/10.1063/1.89661 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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A laser resonance technique using Doppler tuning has been applied to measure transitions between highly excited states of highly ionized fluorine. Resonance transitions between n=9 and n=10 levels of 19F8+ with a mean wavelength of 4796.06±0.24 Å were observed. This wavelength is close to the calculated value of 4796.16 Å for the wavelength of the 92L17/2–102M19/2 transition.
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32.30.Jc Visible and ultraviolet spectra
42.60.-v Laser optical systems: design and operation
07.60.Rd Visible and ultraviolet spectrometers

Double‐heterostructure GaAs‐GaAlAs injection lasers on semi‐insulating substrates using carrier crowding

C. P. Lee, S. Margalit, and A. Yariv

Appl. Phys. Lett. 31, 281 (1977); http://dx.doi.org/10.1063/1.89662 (2 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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GaAs‐GaAlAs double‐heterostructure lasers were fabricated on semi‐insulating substrates. Laser action based on carrier confinement via the crowding effect has been demonstrated. Laser action takes place in a narrow (10–20 μm) region near the edge of the mesa where the current is injected. The threshold current is low and is comparable to that of stripe‐geometry lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
72.80.Ey III-V and II-VI semiconductors

Controlled barrier height InP Schottky diodes prepared by sulfur diffusion

J. J. Coleman

Appl. Phys. Lett. 31, 283 (1977); http://dx.doi.org/10.1063/1.89663 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

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Schottky barrier diodes with adjusted effective barrier heights have been obtained by diffusing sulfur into n‐type InP to form a shallow highly doped layer at the surface. The necessary geometry and doping conditions for achieving lowered barrier heights are described and the experimental procedure for the diffusion of sulfur in InP is outlined. Data are presented on several devices having different surface layer impurity concentrations and effective barrier heights.
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73.30.+y Surface double layers, Schottky barriers, and work functions
66.30.J- Diffusion of impurities
73.20.Hb Impurity and defect levels; energy states of adsorbed species

P+/N high‐efficiency silicon solar cells

M. S. Bae and R. V. D’Aiello

Appl. Phys. Lett. 31, 285 (1977); http://dx.doi.org/10.1063/1.89664 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

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A novel boron‐diffusion process is described for the fabrication of high‐efficiency P+/N silicon solar cells. Over the range of diffusion parameters investigated this diffusion process results in a boron‐rich surface layer and shallow junctions (0.15–0.4 μm) having two properties important to the formation of high‐efficiency solar cells—relatively low values of sheet resistance (35–140 Ω/☒) which facilitates the front‐surface grid‐metal design and large resultant lifetimes approaching 60 μs. The characteristics of P+/N solar cells, fabricated using this diffusion process in single‐crystal (CZ) silicon wafers, having AM1 efficiencies ranging from 14 to 17% are presented.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
61.72.U- Doping and impurity implantation

LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region

E. A. Rezek, N. Holonyak, B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, and J. D. Fairing

Appl. Phys. Lett. 31, 288 (1977); http://dx.doi.org/10.1063/1.89665 (3 pages) | Cited 38 times

Online Publication Date: 26 August 2008

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A liquid‐phase‐epitaxial (LPE) double‐heterojunction (DH) laser structure with an ∼1‐μm ’’active region’’ consisting of ≳20 In1−xGaxP1−zAsz and InP lattice‐matched thin layers is described. The thin‐layer dimensions are small enough (<500 Å) to make quantum size effects relevant.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology

On the determination of charge centroids in insulators by photoinjection or photodepopulation

R. J. Powell

Appl. Phys. Lett. 31, 290 (1977); http://dx.doi.org/10.1063/1.89666 (2 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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Under certain conditions the centroid of a trapped charge distribution in an MOS insulator can be determined from charge and flatband shift measurements during photoinjection or photodepopulation. This technique was applied earlier by Harari and Royce, who made an erroneous assumption in deriving their equation. The correct equations are derived in the present letter, and the trap structure of pyrolytic Al2O3 films is reinterpreted.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects

Reversible conductivity changes in discharge‐produced amorphous Si

D. L. Staebler and C. R. Wronski

Appl. Phys. Lett. 31, 292 (1977); http://dx.doi.org/10.1063/1.89674 (3 pages) | Cited 1050 times

Online Publication Date: 26 August 2008

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A new reversible photoelectronic effect is reported for amorphous Si produced by glow discharge of SiH4. Long exposure to light decreases both the photoconductivity and the dark conductivity, the latter by nearly four orders of magnitude. Annealing above 150 °C reverses the process. A model involving optically induced changes in gap states is proposed. The results have strong implications for both the physical nature of the material and for its applications in thin‐film solar cells, as well as the reproducibility of measurements on discharge‐produced Si.
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72.80.Ng Disordered solids
72.40.+w Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
84.60.Jt Photoelectric conversion

Thermally stimulated currents in epitaxially grown selenium monocrystalline films

M. I. El‐Azab and C. H. Champness

Appl. Phys. Lett. 31, 295 (1977); http://dx.doi.org/10.1063/1.89675 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

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Thermally stimulated currents have been measured at liquid‐nitrogen temperature in structures containing a monocrystalline selenium thin film in the (0001) orientation. The results indicate a total trap density of the order of 1020 cm−3. Decayed TSC results suggest trapping energies over a range of values up to 0.16 eV.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Sx Metal-semiconductor-metal structures
72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Laser action on the B2Σ+1/2→X2Σ+1/2 band of HgBr at 5018 Å

J. H. Parks

Appl. Phys. Lett. 31, 297 (1977); http://dx.doi.org/10.1063/1.89676 (4 pages) | Cited 69 times

Online Publication Date: 26 August 2008

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This letter describes a new laser operating on the B2Σ+1/2→X2Σ+1/2 band of HgBr at 5018 Å. Pumping was achieved by high‐intensity electron‐beam excitation of high‐pressure Ar/Xe mixtures containing small amounts of Hg and HBr. A lower bound to the efficiency was determined to be 0.25% in an unoptimized configuration, and higher efficiency is expected.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
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