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15 Aug 1977

Volume 31, Issue 4, pp. 243-309

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Observation of the transferred‐electron effect in GaxIn1−xAsyP1−y 

R. E. Hayes and R. M. Raymond

Appl. Phys. Lett. 31, 300 (1977); http://dx.doi.org/10.1063/1.89651 (2 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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Transferred‐electron oscillation in devices employing GaxIn1−xAsyP1−y as the active material has been observed. An oscillation threshold average field of (5.5–8.6) ×103 V/cm was determined for 1.05‐eV band‐gap material having x and y values of approximately 0.13 and 0.37, respectively. A pulsed device had an efficiency of 0.5% at 27.49 GHz.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.20.Ht High-field and nonlinear effects

Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks

W. T. Tsang and M. Ilegems

Appl. Phys. Lett. 31, 301 (1977); http://dx.doi.org/10.1063/1.89677 (4 pages) | Cited 27 times

Online Publication Date: 26 August 2008

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Selective growth of patterned GaAs and AlxGa1−xAs thin‐film structures with well‐defined optically smooth mirrorlike edges has been achieved with a Si‐mask shadowing technique for molecular beam epitaxy. Single and multilayer stripe‐mesa waveguides with widths as narrow as 1 μm, two‐dimensional waveguide tapers, and various other epilayer patterns have been fabricated using single‐level or multilevel masking. This technique has potential for use in the realization of integrated optoelectronic circuits in the GaAs/AlxGa1−xAs system.
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42.82.-m Integrated optics
68.55.-a Thin film structure and morphology
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Intensity variations in Auger spectra caused by diffraction

C. C. Chang

Appl. Phys. Lett. 31, 304 (1977); http://dx.doi.org/10.1063/1.89678 (3 pages) | Cited 21 times

Online Publication Date: 26 August 2008

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Auger spectra from a Si (111) surface with about 10 Å oxide were utilized to demonstrate that diffraction can cause Auger intensity changes of a factor of 2 even in data acquired using the cylindrical mirror analyzer. The diffraction mechanism was revealed by a comparison of spectra taken before and after small changes in crystal orientation and noting that Auger peaks from the amorphous surface oxide did not change amplitude significantly while peaks from the crystalline Si changed by large amounts. Diffraction of the ejected Auger electron was an important process because relative intensity changes among peaks within a single ionization series were large. The collected electron image resembling a Kikuchi pattern visible in the scanning mode of the Auger apparatus was used for accurately orienting the crystal.
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79.20.Fv Electron impact: Auger emission
61.05.J- Electron diffraction and scattering
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Microwave mixing with niobium variable thickness bridges

Li‐Kong Wang, Alessandro Callegari, Bascom S. Deaver, Daniel W. Barr, and Robert J. Mattauch

Appl. Phys. Lett. 31, 306 (1977); http://dx.doi.org/10.1063/1.89679 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

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Niobium thin‐film bridges 300 Å thick, 1 μm wide, and 0.5 μm long joining two bulk films 5000 Å thick and having normal resistance of ∼1 Ω have been fabricated and used for microwave mixing at 10 GHz. They exhibit Josephson, bolometric, and multiple‐flux‐flow mixing and have useful response at 100–200 GHz. The data show in a direct way limitations imposed by flux flow and heating.
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85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
73.40.Jn Metal-to-metal contacts
FREE

Erratum: Integrated interferometric reflector

W. Streifer, D. R. Scifres, and R. D. Burnham

Appl. Phys. Lett. 31, 309 (1977); http://dx.doi.org/10.1063/1.89811 (1 page)

Online Publication Date: 26 August 2008

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Abstract Unavailable
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99.10.Cd Errata
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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