APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Sep 1977

Volume 31, Issue 5, pp. 313-365


Prebreakdown phenomena in sphere‐sphere electrode configurations in dielectric liquids

John C. Devins, Stefan J. Rzad, and Robert J. Schwabe

Appl. Phys. Lett. 31, 313 (1977); http://dx.doi.org/10.1063/1.89682 (2 pages) | Cited 15 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Negative streamer growth is observed in a highly refined mineral oil for sphere‐sphere electrode configurations. The shape of the streamers is somewhat different from that found in point‐plane geometries. The addition of electron trapping additives accelerates the negative streamer velocity as was found to be the case in point‐plane geometry. Breakdown occurs before the negative streamer crosses the gap and appears to originate at the anode. Very fast positive streamers are, in fact, observed.
Show PACS
77.22.Jp Dielectric breakdown and space-charge effects
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Temperature effects on quartz‐crystal surface‐wave oscillators

D. Hauden, M. Michel, G. Bardeche, and J.‐J. Gagnepain

Appl. Phys. Lett. 31, 315 (1977); http://dx.doi.org/10.1063/1.89683 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A theoretical study of the temperature frequency dependence of a quartz‐crystal oscillator using surface‐wave delay lines is performed and enables one to obtain the first‐ and second‐order frequency temperature coefficients. These theoretical results are in agreement with the corresponding available experimental values, corresponding to ST and Y cuts. A new zero first‐order temperature coefficient cut is presented.
Show PACS
43.35.Pt Surface waves in solids and liquids
05.70.Ce Thermodynamic functions and equations of state
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Visualization of solid material joints using a transmission‐type scanning acoustic microscope

C. S. Tsai, S. K. Wang, and C. C. Lee

Appl. Phys. Lett. 31, 317 (1977); http://dx.doi.org/10.1063/1.89684 (4 pages) | Cited 7 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The results of imaging experiments for the interfacial regions of four representative solid material joint, composite, and bonds, using a transmission‐type scanning acoustic microscope operating at 150 MHz, are reported. These are (1) Mylar‐epoxy‐Mylar joint, (2) brass‐copper grid‐adhesive‐brass composite, (3) brass‐solder‐brass bond, and (4) silicon‐solder‐copper bond. Flaws, voids, and defects in these specimens have been detected.
Show PACS
81.70.-q Methods of materials testing and analysis
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)
46.80.+j Measurement methods and techniques in continuum mechanics of solids
43.58.+z Acoustical measurements and instrumentation

High‐power millimeter radiation from an intense relativistic electron‐beam device

T. C. Marshall, S. Talmadge, and P. Efthimion

Appl. Phys. Lett. 31, 320 (1977); http://dx.doi.org/10.1063/1.89685 (3 pages) | Cited 30 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Several megawatts of radiation at wavelength as short as 1 mm have been generated by the interaction of an intense relativistic electron beam with a rippled magnetic field.
Show PACS
41.75.Fr Electron and positron beams
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
52.27.Ny Relativistic plasmas

Structure and initial oxidation of the LaB6 (001) surface

M. Aono, T. Tanaka, E. Bannai, and S. Kawai

Appl. Phys. Lett. 31, 323 (1977); http://dx.doi.org/10.1063/1.89686 (3 pages) | Cited 21 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The LaB6 (001) clean surface and its initial oxidation have been studied by UPS, XPS, and work‐function measurements. For the clean surface, a so‐called surface state has been found, and a work function of 2.4±0.1 eV has been measured. The surface state disappears by an oxygen exposure of ∼7 langmuir (L), and the work function increases up to 4.0±0.1 eV. This initial oxidation is not a simple oxygen‐adsorption process but proceeds with the formation of a surface oxide or oxides.
Show PACS
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
73.20.-r Electron states at surfaces and interfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions

The dynamics of radiation blistering and near‐surface deuterium retention in deuteron‐irradiated copper

P. B. Johnson and T. R. Armstrong

Appl. Phys. Lett. 31, 325 (1977); http://dx.doi.org/10.1063/1.89687 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The effect of radiation blistering on the retention of deuterium in the near‐surface region of 200‐keV d+ irradiated Cu at 350 K has been studied. Blistering is detected using an in situ method based on the scattering of laser light. The incident deuteron beam is used both for implantation and to obtain the dynamic deuterium depth profile. Discrete blisters of approximately 4‐μm average diameter are found to form rapidly at a well‐defined fluence of (7±1) ×1018d+/cm2. The rate deuterium accumulates in the first 0.4 μm is found to fall dramatically at the onset of blistering from a steady value, of ∼2% of the implantation rate, to nearly zero. Typical D : Cu loadings at the critical dose for blistering are ∼1 at.%.
Show PACS
61.80.Jh Ion radiation effects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Noise properties of a He‐Se laser

Takeo Suzuki and Shogo Ieiri

Appl. Phys. Lett. 31, 328 (1977); http://dx.doi.org/10.1063/1.89688 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Noise properties of a He‐Se laser were investigated. A dispersion relation of fluctuations of side light along the positive column was obtained by using a real‐time digital correlator with bandpass filters. Interpretation of the dispersion relation suggests that the cause of the noise is not just the metal‐vapor density fluctuations, but also the randomlike moving striations.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.25.Gj Fluctuation and chaos phenomena

Enhanced production of coherent vuv radiation by four‐wave mixing in Sr vapor

G. C. Bjorklund, J. E. Bjorkholm, R. R. Freeman, and P. F. Liao

Appl. Phys. Lett. 31, 330 (1977); http://dx.doi.org/10.1063/1.89680 (3 pages) | Cited 12 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Significant enhancement of the unsaturated conversion efficiencies of four‐wave sum frequency mixing processes involving autoionizing states in Sr vapor is obtained by utilizing the 5s7s 1S0 two‐photon channel and phase matching by frequency adjustment. Extrapolation to low power levels indicates that production of cw vuv radiation may be possible. A saturation effect arising from depletion of one of the fundamental beams by two‐photon absorption is observed.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

Saturable absorber overlap of iodine 127 with the optically pumped 546‐nm mercury laser

Max Artusy and A. E. Siegman

Appl. Phys. Lett. 31, 333 (1977); http://dx.doi.org/10.1063/1.89681 (2 pages)

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A single isolated saturated‐absorption feature in 127I2 using the optically pumped 546.1‐nm Hg laser has been observed with low (∼6 MHz) resolution. The 3S1→3P2 Hg laser transition can be centered exactly on this feature by varying the N2 buffer gas pressure using the measured pressure tuning rate of −9.4 MHz/Torr. This may provide an attractive laser system for absolute wavelength stabilization.
Show PACS
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
32.70.Jz Line shapes, widths, and shifts
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Recombination lasers in expanding CO2 laser‐produced plasmas of argon, krypton, and xenon

W. T. Silfvast, L. H. Szeto, and O. R. Wood II

Appl. Phys. Lett. 31, 334 (1977); http://dx.doi.org/10.1063/1.89689 (4 pages) | Cited 17 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Laser oscillation has been observed in the expansion phase of transversely initiated laser‐produced plasmas of argon, krypton, and xenon at pressures up to 1 atm. All of the experimental evidence indicates that these lasers are of a plasma‐recombination type in which an initially ionized plasma rapidly expands and cools, leading to a high recombination rate and subsequently to an inversion in the next lower ionization stage.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
51.70.+f Optical and dielectric properties

Offset masks for lift‐off photoprocessing

G. J. Dolan

Appl. Phys. Lett. 31, 337 (1977); http://dx.doi.org/10.1063/1.89690 (3 pages) | Cited 162 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We describe a technique using photolithography to produce submicron‐scale thin‐film structures and simple multilevel structures by single‐mask lift‐off processing. The technique employs masks offset from the substrate and oblique angle thin‐film deposition. It provides a simple means of making small‐area Josephson junctions and varying‐thickness superconducting bridges and is suitable for the inclusion of these devices in circuits. The examples we show emphasize such applications in superconductivity; however, the technique may find uses in other fields as well.
Show PACS
85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Two‐dimensional observation of Gunn domains at 1 GHz by picosecond pulse stroboscopic SEM

T. Hosokawa, H. Fujioka, and K. Ura

Appl. Phys. Lett. 31, 340 (1977); http://dx.doi.org/10.1063/1.89691 (1 page) | Cited 8 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The high‐field domains in a Gunn‐effect diode triggered at 1 GHz have been studied pictorially with the stroboscopic scanning electron microscope. Y‐modulated images have also been obtained.
Show PACS
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.20.Ht High-field and nonlinear effects
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Quasisimultaneous SIMS‐AES‐XPS investigation of the oxidation of Ti in the monolayer range

A. Benninghoven, H. Bispinck, O. Ganschow, and L. Wiedmann

Appl. Phys. Lett. 31, 341 (1977); http://dx.doi.org/10.1063/1.89692 (3 pages) | Cited 16 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
In order to calibrate previous secondary ion mass spectrometry (SIMS) measurements on various oxidized metal surfaces in terms of oxygen coverage, quasisimultaneous SIMS, AES, and XPS have been applied to several metal‐oxygen systems. First, results are given for the Ti‐O system. In this case, the oxygen signals obtained with the three methods show an identical dependence on the oxygen exposure and can therefore be used for establishing a coverage scale. The successive stages of oxidation lead to significant changes of first the AES, then the SIMS signals, and finally a chemical shift in XPS.
Show PACS
81.05.Bx Metals, semimetals, and alloys
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Interstitial oxygen gettering in Czochralski silicon wafers

G. A. Rozgonyi and C. W. Pearce

Appl. Phys. Lett. 31, 343 (1977); http://dx.doi.org/10.1063/1.89693 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A procedure for reducing the interstitial oxygen content of virgin Czochralski silicon wafers is described. The process consists of oxidizing wafers in an HCl‐added dry oxygen ambient. The gettering action reduces the probability of oxygen precipitation throughout the bulk of the wafer and simultaneously provides a masking or passivating surface oxide. Since oxygen precipitates have been correlated with the nucleation of dislocations and stacking faults, which are known to adversely affect many devices, these gettering procedures may provide a means for overcoming some of the processing problems associated with large‐diameter high oxygen content Czochralski material.
Show PACS
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.Nn Stacking faults and other planar or extended defects
81.65.-b Surface treatments

Auger coefficients for highly doped and highly excited silicon

J. Dziewior and W. Schmid

Appl. Phys. Lett. 31, 346 (1977); http://dx.doi.org/10.1063/1.89694 (3 pages) | Cited 255 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The recombination kinetics in highly doped p‐ and n‐type silicon has been investigated at 77, 300, and 400 K through the radiative band‐to‐band recombination. The minority‐carrier lifetime depends quadratically on the doping concentration as expected for Auger recombination. The Auger coefficients at 300 K for p‐ and n‐type silicon are found to be Cp=9.9×10−32 cm6 s−1 and Cn=2.8×10−31 cm6 s−1. They are nearly independent of temperature in the range investigated. The Auger coefficient in highly excited pure silicon at 4.2 K (electron‐hole drops) is essentially the same as in highly doped silicon.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors
72.80.Cw Elemental semiconductors
71.35.-y Excitons and related phenomena

Method of separating hysteresis effects from MIS capacitance measurements

T. Nakagawa and H. Fujisada

Appl. Phys. Lett. 31, 348 (1977); http://dx.doi.org/10.1063/1.89695 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A new method is proposed to estimate interface state density in hysteretic MIS devices. In this method, a narrow bias‐voltage swing is applied around a certain center bias voltage to obtain a narrow C‐V curve without hysteresis. It is shown that the capacitance derivative obtained in this way depends on MIS capacitance only, and then can be used for determining the interface state density in the hysteretic InSb MIS devices.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
85.30.Hi Surface barrier, boundary, and point contact devices
84.32.Tt Capacitors

Long‐lifetime photoconductivity effect in n‐type GaAlAs

R. J. Nelson

Appl. Phys. Lett. 31, 351 (1977); http://dx.doi.org/10.1063/1.89696 (3 pages) | Cited 196 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A long‐lifetime (τ∼hours, T≲60 °K) photoconductivity effect is observed in Te‐doped Ga1−xAlxAs (0.25≲x≲0.7). Analysis of Hall‐effect data showing a pronounced decrease in the electron mobility upon photoexcitation shows that a donor level is involved. Similar effects are observed in Se‐ and Sn‐doped Ga1−xAlxAs (x=0.3). The magnitude of the effect which is typically of the order of the room‐temperature electron concentration seems to correlate linearly with the concentration of Te, showing that a constant concentration background impurity is not responsible for this effect. A large lattice relaxation is indicated by the large difference between the thermal (0.12 eV) and optical (1.1 eV) ionization energy of the donor level. The potential barrier to electron capture by the donor level is estimated to be 180 meV (x=0.36) from time decay measurements of the photoexcited electron population at low temperatures. Extrapolation to room temperature gives a characteristic decay time of ∼0.5 nsec for the electron concentrations expected in injection lasers.
Show PACS
78.40.Fy Semiconductors
72.40.+w Photoconduction and photovoltaic effects
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors

Analytic approximations for the Fermi energy of an ideal Fermi gas

W. B. Joyce and R. W. Dixon

Appl. Phys. Lett. 31, 354 (1977); http://dx.doi.org/10.1063/1.89697 (3 pages) | Cited 125 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
An important function in semiconductor‐device analysis and transport theory is the widely tabulated Fermi‐Dirac integral, F (η) =2π−1/2F∞0[exp(x−η)+1]−1f dx, f=x1/2, which relates, for example, the Fermi energy ηkT to the carrier density N=FN0 in a parabolic semiconductor band (N0=effective density of states). We show that the classical or Boltzmann approximation to this integral (η=lnF, η≲−2) is extended to cover the Fermi‐energy range of semiconductor lasers (η≲+2) by the expression η=lnF+2−3/2F and by other simple differentiable approximations applicable to higher degeneracy (η≲7) or to nonparabolic bands (f≠x1/2).
Show PACS
05.30.Fk Fermion systems and electron gas
42.55.Px Semiconductor lasers; laser diodes
64.30.-t Equations of state of specific substances

Impurity gradients caused by surface states and substrate doping in epitaxial GaAs

C. M. Wolfe and K. H. Nichols

Appl. Phys. Lett. 31, 356 (1977); http://dx.doi.org/10.1063/1.89698 (4 pages) | Cited 9 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A model is developed for the incorporation of donors and acceptors in epitaxial GaAs which indicates that the thin p‐type region often observed at the layer‐substrate interface in n−p+ structures is caused by the electric field associated with surface states and substrate doping. The model also predicts impurity gradients at the outer surface, about which little is known experimentally. Since results from the model are in agreement with many experimental observations, surface states and substrate doping are believed to be the major cause of impurity gradients in epitaxial GaAs.
Show PACS
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
73.20.-r Electron states at surfaces and interfaces
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High‐frequency limitations of the double‐junction SQUID amplifier

J. E. Zimmerman and D. B. Sullivan

Appl. Phys. Lett. 31, 360 (1977); http://dx.doi.org/10.1063/1.89699 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The double‐junction SQUID is viewed as a parametric amplifier and mechanisms, which place an upper limit on the pump frequency (and thus gain), are investigated. Self‐induced steps in the I‐V characteristics as well as damping of the Josephson oscillation are shown to be two limiting mechanisms.
Show PACS
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
84.40.Dc Microwave circuits

Capacitively shunted variable‐thickness microbridges

J. T. C. Yeh and R. A. Buhrman

Appl. Phys. Lett. 31, 362 (1977); http://dx.doi.org/10.1063/1.89700 (4 pages) | Cited 3 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A study has been made of capacitively shunted Pb variable‐thickness microbridges. The observed hysteretic I‐V characteristics of these microbridges are in at least qualitative agreement with the predictions of the shunted junction model. Discrepancies between the model and experiment are attributed, in part, to the inductance of the microbridge and capacitor films. In some cases, a voltage‐switching structure is also observed, which is due to geometrical resonances in the thin‐film structure.
Show PACS
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close