APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Oct 1977

Volume 31, Issue 7, pp. 405-484

Page 1 of 2 Pages Next Page | Jump to Page

Switching and oscillation phenomena in SnO2‐VOx‐PdO ceramics

Yoshiaki Taketa and Ryoichi Furugochi

Appl. Phys. Lett. 31, 405 (1977); http://dx.doi.org/10.1063/1.89725 (2 pages) | Cited 5 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Switching and oscillation were found in SnO2‐VOx‐PdO ceramics. This switching does not appear above 60°C. However, under 40°C, it comprises two switching actions and depends upon the ambient temperature. The oscillation is irregular and the amplitude is as great as 30−40 V at room temperature.
Show PACS
72.60.+g Mixed conductivity and conductivity transitions
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

310‐MHz SAW resonator with Q at the material limit

R. C. M. Li

Appl. Phys. Lett. 31, 407 (1977); http://dx.doi.org/10.1063/1.89726 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Two‐port SAW resonators have been made on ST‐cut quartz to operate at 310 MHz with unloaded Q values in vacuum in excess of 32 000 (the limit on Q imposed by intrinsic material loss at this frequency is approximately 33 000). Design principles and fabrication techniques employed in the realization of these devices are described.
Show PACS
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Effects of anisotropy on SAW resonator transverse modes

L. A. Coldren

Appl. Phys. Lett. 31, 409 (1977); http://dx.doi.org/10.1063/1.89727 (4 pages) | Cited 1 time

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A quantitative comparison of anisotropic theory with experiments on SiO2 and LiNbO3 shows the strong effects of wave surface anisotropy on SAW resonator transverse modes. Simple approximate formulas for the frequency splittings of the resonant modes are given for both the waveguided case and the unguided case where ’’free‐space’’ modes are prevalent.
Show PACS
43.20.Ks Standing waves, resonance, normal modes
43.20.Mv Waveguides, wave propagation in tubes and ducts
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
43.40.+s Structural acoustics and vibration

Direct observation of the dynamics of picosecond‐pulse optical breakdown

John P. Anthes and Michael Bass

Appl. Phys. Lett. 31, 412 (1977); http://dx.doi.org/10.1063/1.89728 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The dynamics of electron avalanche breakdown induced by picosecond laser pulses were observed directly with an ultrafast streak camera. The ionization rate for fused quartz exposed to a 25‐psec 532‐nm pulse which produced a damaging breakdown is ⩾4.5×1012 sec−1.
Show PACS
77.22.Jp Dielectric breakdown and space-charge effects
42.70.Ce Glasses, quartz

Charge separation and target voltages in laser‐produced plasmas

J. S. Pearlman and G. H. Dahlbacka

Appl. Phys. Lett. 31, 414 (1977); http://dx.doi.org/10.1063/1.89729 (4 pages) | Cited 29 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Measurement of the voltages of isolated targets irradiated with 50‐psec laser pulses show kilovolt target potentials existing for many nanoseconds. The amplitude of the voltage exceeds what is normally expected for a plasma pressure gradient by roughly an order of magnitude. The voltage amplitude and temporal characteristics are found to be dependent on the vacuum chamber dimensions. A simple one‐dimensional plasma model explains the voltage characteristics through the existence of space‐charge separation effects and leads to a measurement of the plasma temperature.
Show PACS
52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)
52.50.Gj Plasma heating by particle beams
52.70.Ds Electric and magnetic measurements

Ion‐implanted n‐ and p‐type layers in InP

J. P. Donnelly and C. E. Hurwitz

Appl. Phys. Lett. 31, 418 (1977); http://dx.doi.org/10.1063/1.89730 (3 pages) | Cited 54 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
InP has been doped by implantation with several different ions to yield layers of both n‐ and p‐type conductivity. Se+ and Si+ were found to be efficient n‐type dopants with activations in excess of 75% for moderate doses (1×1014 cm−2 at 400 keV). At doses of 1×1015 cm−2, sheet resistivities as low as 15 Ω/☒ were obtained. Cd+, Mg+, and Be+ were all acceptors, with Mg+ yielding a sheet hole concentration as high as 5×1013 cm−2 for a dose of 1×1014 cm−2 at 150 keV. Reproducible annealing of implanted samples at temperatures up to 750 °C was accomplished with a pyrolytic phosphosilicate glass (PSG) encapsulation. Implants of Kr+ indicate that residual implantation damage is n type.
Show PACS
61.72.U- Doping and impurity implantation
72.80.Ey III-V and II-VI semiconductors

Structural changes in amorphous Pd80Si20 by neutron irradiation

Kenji Doi, Hideo Kayano, and Tsuyoshi Masumoto

Appl. Phys. Lett. 31, 421 (1977); http://dx.doi.org/10.1063/1.89731 (2 pages) | Cited 12 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Amorphous Pd80Si20 was irradiated with fast neutrons (≳1 MeV) to a fluence of 5×1020 neutrons/cm2. X‐ray scattering intensities were measured before and after the irradiation with monochromatic Cu‐Kα1 rays. Scattered intensities for s≳0.4 Å−1 (s=2 sinϑ/λ) proved unaffected, while intensities were found remarkably enhanced for s<0.4 Å−1 after the irradiation, i.e., in the small‐angle region and the leading edge of the first halo. The results are discussed in relation to the structural anomalies in amorphous solids.
Show PACS
61.80.Hg Neutron radiation effects
61.43.Fs Glasses
61.43.-j Disordered solids

Optical properties of selectively absorbing Ni/Al2O3 composite films

H. G. Craighead and R. A. Buhrman

Appl. Phys. Lett. 31, 423 (1977); http://dx.doi.org/10.1063/1.89732 (3 pages) | Cited 36 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Composite films of Ni particles embedded in an Al2O3 matrix have been produced by controlled coevaporation. The optical properties of the Ni/Al2O3 composites measured over the range of the solar spectrum are in good accord with the predictions of Maxwell‐Garnett theory provided the Ni volume fraction is ≲0.2. The composite films have excellent spectral selectivity for the absorption of solar radiation, with a solar absorptivity of 0.94 obtained for a film produced with a composition gradient. Low‐temperature emissivities of ∼0.1 have been obtained with composite films evaporated on highly reflecting metal substrates.
Show PACS
84.60.Ve Energy storage systems, including capacitor banks
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.05.Mh Cermets, ceramic and refractory composites
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

A new interferometric alignment technique

D. C. Flanders, Henry I. Smith, and Stewart Austin

Appl. Phys. Lett. 31, 426 (1977); http://dx.doi.org/10.1063/1.89719 (3 pages) | Cited 11 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A new interferometric alignment technique has been developed that is suitable for aligning x‐ray lithography masks or photomasks relative to a substrate. A superposition precision of 200 Å has been demonstrated and in principle ∼100 Å should be possible. The superposition of matching grating type alignment marks on facing plates is determined from the intensities of beams multiply diffracted from the matching alignment marks. The principle of the interferometric alignment technique is described.
Show PACS
07.60.Ly Interferometers
42.79.Dj Gratings
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

A direct nuclear pumped 1.45‐μ atomic carbon laser in mixtures of He‐CO and He‐CO2

M. A. Prelas, M. A. Akerman, F. P. Boody, and G. H. Miley

Appl. Phys. Lett. 31, 428 (1977); http://dx.doi.org/10.1063/1.89720 (3 pages) | Cited 15 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Direct nuclear pumping of the 1.45‐μ line in neutral carbon has been achieved using the 10B(n,α)7Li reaction. Lasing was observed in mixtures of both He‐CO and He‐CO2. The laser has the lowest neutron flux threshold to date, ∼4×1014 n/cm2 sec, and a 20‐msec lasing time. Lasing occurred at pressures from 20–800 Torr He with partial pressures of CO and CO2 from ∼1–21 mTorr. A delay, increasing to ∼5 msec for lower total pressures, was observed between the peak of the neutron pulse and the peak of the laser signal for mTorr partial pressures of CO2, and for mTorr partial pressures of N2‐CO mixtures.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

A tunable stabilized single‐mode TEA CO2 laser

J. P. Nicholson and K. S. Lipton

Appl. Phys. Lett. 31, 430 (1977); http://dx.doi.org/10.1063/1.89721 (3 pages) | Cited 13 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A TEA CO2 laser which can be operated in a single mode is described. The laser can be tuned to most rotational lines in the 9.6‐μ and 10.6‐μ CO2 emission bands. The system can also be fine‐tuned to oscillate up to ±2 GHz off any particular line center. Application of the laser to obtain high‐resolution spectroscopy of a D2O absorption line is briefly described.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques

Electro‐optic effects of PLZT thin films

Makoto Ishida, Hiroyuki Matsunami, and Tetsuro Tanaka

Appl. Phys. Lett. 31, 433 (1977); http://dx.doi.org/10.1063/1.89722 (2 pages) | Cited 27 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
It is demonstrated that thin films of PLZT prepared by rf sputtering exhibit an electro‐optic effect. The effects are measured using the reflection of the light polarized with the electric vector parallel to the incidence plane of the light. The reflected light intensity changes with the electric field and shows a decrease of about 33% at 12.5 kV/cm, when the light is incident at 70°. This technique turns out to be useful for the measurements of the electro‐optic effects of thin films, and the results suggest the possibility of a reflection‐type light modulator consisting of a thin film.
Show PACS
78.20.Jq Electro-optical effects
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
77.55.-g Dielectric thin films

Optical phase conjugation in a lithium formate crystal

P. V. Avizonis, F. A. Hopf, W. D. Bomberger, S. F. Jacobs, A. Tomita, and K. H. Womack

Appl. Phys. Lett. 31, 435 (1977); http://dx.doi.org/10.1063/1.89723 (3 pages) | Cited 30 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Optical phase reversal has been demonstrated using type‐II phase matching in lithium formate operated as a degenerate optical parametric amplifier with pump peak powers as low as 103 W. The amplifier was driven in a collimated geometry.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

A light‐controlled light modulator

D. Grischkowsky

Appl. Phys. Lett. 31, 437 (1977); http://dx.doi.org/10.1063/1.89724 (4 pages)

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A fast resonantly enhanced light‐controlled light modulator is demonstrated. Optical switching action is obtained with driving laser pulses with intensities as low as 2 kW/cm2. The switching mechanism is the optical nonlinearity due to adiabatic following for the single photon resonance.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes

An infrared upconverter for astronomical imaging

R. W. Boyd and C. H. Townes

Appl. Phys. Lett. 31, 440 (1977); http://dx.doi.org/10.1063/1.89733 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
An imaging upconverter has been constructed which is suitable for use in the study of the thermal 10‐μm radiation from astronomical sources. The infrared radiation is converted to visible radiation by mixing in a 1‐cm‐long proustite crystal. The phase‐matched 2‐cm−1 bandpass is tunable from 9 to 11 μm. The conversion efficiency is 2×10−7, and the field of view of 40 arc seconds on the sky contains several hundred picture elements, approximately diffraction‐limited resolution in a large telescope. The instrument has been used in studies of the sun, moon, Mercury, and VY Canis Majoris.
Show PACS
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
95.85.Gn Far infrared (10-300 μm)
95.75.Mn Image processing (including source extraction)

Laser‐induced absorption line narrowing for ions in crystals: Application to the hyperfine structure of the 6011‐Å Pr3+ : LaCl3 line

C. Delsart, N. Pelletier‐Allard, and R. Pelletier

Appl. Phys. Lett. 31, 443 (1977); http://dx.doi.org/10.1063/1.89734 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We report on the observation of absorption line narrowing in a crystal. A saturating cw single‐mode dye laser leads to hole burning over a homogeneous width according to the site selection, while a second tunable cw single‐mode dye laser probes the perturbed profile. Two‐level and three‐level resonances corresponding to the Pr3+ : LaCl3 6011‐Å line hyperfine structure are obtained with very high spectral resolution (σ/Δσ≃6×107).
Show PACS
78.90.+t Other topics in optical properties, condensed matter spectroscopy and other interactions of particles and radiation with condensed matter (restricted to new topics in section 78)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

n‐CdS/n‐GaAs voltage‐enhanced photoanode

Sigurd Wagner and J. L. Shay

Appl. Phys. Lett. 31, 446 (1977); http://dx.doi.org/10.1063/1.89735 (2 pages) | Cited 8 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We report an n‐CdS photoanode grown on an n‐GaAs substrate. The photovoltage at the n‐GaAs/n‐CdS junction in series with the CdS/electrolyte junction increases the solar‐cell efficiency by a factor of about 1.5 relative to a simple n‐CdS photoelectrochemical solar cell.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors
82.47.-a Applied electrochemistry
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Mr Semiconductor-electrolyte contacts

Green HgCl(B2Σ+→X2Σ+) laser

J. Gary Eden

Appl. Phys. Lett. 31, 448 (1977); http://dx.doi.org/10.1063/1.89736 (3 pages) | Cited 39 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Lasing action on the v=0→v′=22 transition of the B2Σ+→X2Σ+ band of HgCl has been observed. Electron beam excitation of Ar/Xe/Hg/CCl4 or CCl3Br mixtures produced oscillation at 557.62 and 558.35 (±0.15) nm. The mercury‐halide family appears promising as an efficient source of line‐tunable stimulated emission in the blue‐green region of the spectrum.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
31.50.Df Potential energy surfaces for excited electronic states

Photoluminescence of hydrogenated amorphous silicon

J. I. Pankove and D. E. Carlson

Appl. Phys. Lett. 31, 450 (1977); http://dx.doi.org/10.1063/1.89737 (2 pages) | Cited 44 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Amorphous silicon obtained by the glow‐discharge decomposition of silane can contain on the order of 18–50 at.% of hydrogen. Heating this material above 350 °C causes the evolution of H2. The photoluminescence efficiency decreases with increasing hydrogen depletion.
Show PACS
78.40.Fy Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions

The memory effect of ZnS : Mn ac thin‐film electroluminescence

V. Marrello, W. Rühle, and A. Onton

Appl. Phys. Lett. 31, 452 (1977); http://dx.doi.org/10.1063/1.89738 (3 pages) | Cited 30 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The electroluminescence of ZnS : Mn thin‐film memory devices is observed to occur in two components, one which is spatially homogeneous and one from localized bright regions less than ∼1 μm in diameter. The brightness‐voltage hysteresis, or memory effect, is observed to reside exclusively in the luminescence of the localized bright regions in our devices. It is concluded that the memory effect arises from a negative resistance of a filamentary ac conduction mechanism in these regions.
Show PACS
75.20.Ck Nonmetals
78.60.Fi Electroluminescence

Origin of n≃2 injection current in AlxGa1−xAs heterojunctions

C. H. Henry, R. A. Logan, and F. R. Merritt

Appl. Phys. Lett. 31, 454 (1977); http://dx.doi.org/10.1063/1.89739 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We show that the n≃2 current in AlxGa1−xAs heterojunctions is due to surface recombination. The rate of recombination at etched surfaces is evaluated in two photoluminescence experiments. Both of these experiments provide evidence that the rate of surface recombination is proportional to exp(eV/2kT) and has the correct magnitude to account for the measured I‐V curves. The n≃2 behavior is shown to be a necessary consequence of maintaining equality between surface and depletion layer charge.
Show PACS
85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
78.60.Fi Electroluminescence

AlyGa1‐yAs‐AlxGa1‐x as laser structures for integrated optics grown by molecular‐beam epitaxy

F. K. Reinhart and A. Y. Cho

Appl. Phys. Lett. 31, 457 (1977); http://dx.doi.org/10.1063/1.89740 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Taper‐coupled lasers (TCL) suitable for integrated optical circuits were fabricated with molecular‐beam epitaxy (MBE) by using bakable Ta masks. These lasers had an active layer thickness, d=0.3 μm, and a room‐temperature threshold current density, jth, as low as 2.9 kA/cm2. The quality of this modified MBE growth also permitted construction of MBE lasers from the homogeneous passive AlyGa1‐yAs waveguide sections for the first time. Such lasers with y=0.08 and d=0.8 μm oscillated at jth=9 kA/cm2 and a wavelength λ=0.83 μm. This result indicates the feasibility of developing a visible laser grown by MBE.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
68.55.-a Thin film structure and morphology

Efficient sprayed In2O3 : Sn n‐type silicon heterojunction solar cell

J. C. Manifacier and L. Szepessy

Appl. Phys. Lett. 31, 459 (1977); http://dx.doi.org/10.1063/1.89741 (4 pages) | Cited 42 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We present results concerning In2O3 (tin‐doped) n‐type silicon heterojunction solar cell. The transparent and conductive In2O3 : Sn layer was made using a very simple, cheap, and quick method. Conversion efficiency up to 10% is reported. Typical parameters under AM1 simulated sunlight are open‐circuit photovoltage Voc=500 mV, short‐circuit photocurrent Isc=32 mA cm−2, and fill factors around 0.6–0.65.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors
73.30.+y Surface double layers, Schottky barriers, and work functions
81.05.Kf Glasses (including metallic glasses)

Enhancement of diffusion length in EFG ribbon solar cells under illumination

C. T. Ho, R. O. Bell, and F. V. Wald

Appl. Phys. Lett. 31, 463 (1977); http://dx.doi.org/10.1063/1.89742 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The short‐circuit current, efficiency, and minority‐carrier diffusion length of EFG ribbon silicon solar cells have been measured as a function of illumination level between 0 and 5 suns and found to increase. The faster rate of increase of the current in ribbon cells compared to CZ we attribute to the enhancement of the minority‐carrier diffusion length under illumination. A quasicontinuous deep‐trap model with a Gaussian distribution of compensated donor states is proposed to account for these observations.
Show PACS
84.60.Jt Photoelectric conversion
66.30.J- Diffusion of impurities

Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis and P. D. Dapkus

Appl. Phys. Lett. 31, 466 (1977); http://dx.doi.org/10.1063/1.89743 (3 pages) | Cited 60 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Room‐temperature pulsed laser operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved. Threshold current densities as low as 1.2 kA/cm2 have been attained in totally internally reflecting devices. In broad‐area Fabry‐Perot diodes, threshold current densities as low as 3 kA/cm2 have been attained. These lasers are fabricated from five‐layer epitaxial structures grown entirely by the MO‐CVD process.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Fi Electroluminescence
78.45.+h Stimulated emission
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close