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15 Oct 1977

Volume 31, Issue 8, pp. 487-548

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Optical rotatory power near a cholesteric–smectic‐A transition

Paul E. Sokol and John T. Ho

Appl. Phys. Lett. 31, 487 (1977); http://dx.doi.org/10.1063/1.89751 (2 pages) | Cited 5 times

Online Publication Date: 26 August 2008

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A sensitive temperature dependence of the optical rotatory power of a cholesteric liquid‐crystal film in the vicinity of the smectic‐A phase is reported. The results are consistent with the pretransitional unwinding of the helical structure. The use of the effect in thermometry is discussed.
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61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
78.20.Ek Optical activity
07.20.Dt Thermometers

The charging process in the acoustic surface wave p‐n diode storage correlator

P. Borden and G. S. Kino

Appl. Phys. Lett. 31, 488 (1977); http://dx.doi.org/10.1063/1.89752 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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We demonstrate analytically and experimentally that the acoustic surface wave p‐n diode storage correlator may be charged either very quickly or very slowly, depending on the input signal levels, and independent of the diode storage time. Thus, the same long storage time device is usable for both high‐speed and slow (such as integrating) applications.
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43.60.Qv Signal processing instrumentation, integrated systems, smart transducers, devices and architectures, displays and interfaces for acoustic systems
43.35.Yb Ultrasonic instrumentation and measurement techniques
72.50.+b Acoustoelectric effects
85.30.De Semiconductor-device characterization, design, and modeling

A new hypothesis on ultrasonic interaction with nematic liquid crystal

J. L. Dion and A. D. Jacob

Appl. Phys. Lett. 31, 490 (1977); http://dx.doi.org/10.1063/1.89753 (4 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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The visible interaction of low‐intensity ultrasonic waves with a nematic liquid crystal may be explained simply by the hypothesis of a torque tending to orient LC molecules perpendicular to the vibrations. It is shown how this torque can be related to anisotropic attenuation of ultrasound and minimization of propagation losses. First theoretical developments and optical measurements on a homotropic layer of MBBA are in good agreement and may predict a few simple general laws.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
62.60.+v Acoustical properties of liquids
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

X‐ray emission characteristics of plasmas created by a high‐intensity CO2 laser

G. D. Enright, N. H. Burnett, and M. C. Richardson

Appl. Phys. Lett. 31, 494 (1977); http://dx.doi.org/10.1063/1.89754 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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The spectrum of the x‐ray continuum and line emission emanating from Al, Mg, and (CH2)n plasmas created with a nanosecond CO2 laser pulse has been investigated at irradiance levels up to 2×1014 W/cm2.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Far‐infrared photoconductivity of uniaxially stressed germanium

A. G. Kazanskii, P. L. Richards, and E. E. Haller

Appl. Phys. Lett. 31, 496 (1977); http://dx.doi.org/10.1063/1.89755 (2 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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The influence of uniaxial stress on the extrinsic photoconductivity of gallium‐doped germanium has been investigated. It has been found that the long‐wavelength cutoff is shifted from 114 μm for zero stress to 200 μm for a uniaxial stress of 6.6×103 kg/cm2 along a [100] direction. At this value of stress the responsivity was ∼2×104 V/W and the NEP was ∼2×10−11 W/Hz1/2 at 190 μm.
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72.40.+w Photoconduction and photovoltaic effects
81.40.Tv Optical and dielectric properties related to treatment conditions
85.60.Gz Photodetectors (including infrared and CCD detectors)

Spontaneous anti‐Stokes scattering as a high‐resolution and picosecond‐time‐scale vuv light source

S. E. Harris

Appl. Phys. Lett. 31, 498 (1977); http://dx.doi.org/10.1063/1.89756 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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A vuv and soft x‐ray light source based on spontaneous anti‐Stokes scattering from atomic population stored in a metastable level is proposed. It is shown that the source has a maximum brightness equal to that of a blackbody at a Boltzman temperature characteristic of the population of the metastable level. This maximum brightness is attained as the media approaches two‐photon opacity. The source should have high resolution, may be of picosecond time scale, and on a pulsed basis should be brighter than other laboratory‐scale vuv light sources.
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42.72.-g Optical sources and standards
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.62.-b Laser applications
42.50.-p Quantum optics

Instability of a low‐pressure Na–noble‐gas discharge

M. J. C. van Gemert and T. G. Verbeek

Appl. Phys. Lett. 31, 500 (1977); http://dx.doi.org/10.1063/1.89757 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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A new type of discharge instability is reported for a low‐pressure Na–noble‐gas discharge (∼5×10−3 Torr Na; 5.5 Torr Ne‐Ar, 1% Ar). The voltage‐current (V‐I) characteristic is shown to be multivalued in the voltage. The resulting instability is a discontinuity in the positive column which propagates in the direction of electron particle flow with velocity between about 105 and 5×105 cm/s.
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52.80.Dy Low-field and Townsend discharges

High‐resolution polymer replication of surface topography

Hiroyuki Hiraoka

Appl. Phys. Lett. 31, 503 (1977); http://dx.doi.org/10.1063/1.89758 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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A few micron wide and thick polymer lines are formed from a monomer, methacrylic anhydride, according to a metal pattern of a mask under high‐energy radiation, such as γ rays. The resolution is limited only by the mask configuration; with our present mask configuration it is better than ∼2000 Å. The polymerization is initiated by electrons ejected from metal lines.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
79.20.Hx Electron impact: secondary emission
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Depth distribution of knock‐on nitrogen in Si by phosphorus implantation through Si3N4 films

T. Hirao, K. Inoue, S. Takayanagi, and Y. Yaegashi

Appl. Phys. Lett. 31, 505 (1977); http://dx.doi.org/10.1063/1.89747 (4 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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The concentration profiles of phosphorus and knock‐on nitrogen in silicon after phosphorous implantations into Si3N4‐Si systems have been investigated by using secondary ion mass spectrometry (SIMS). The tails were found on the phosphorus distribution in silicon after the implantation through Si3N4 films. The concentration profiles of knock‐on nitrogen in silicon have been determined by measuring both the in‐depth profiles of knock‐on nitrogen and those of nitrogen after additional nitrogen implantation into a bare silicon embedded with knock‐on nitrogen. The concentration profiles of knock‐on nitrogen show a very high concentration near the surface and extending tails. It was found that the tails were observed at the deeper portion in silicon as energy increased, for a given Si3N4 layer.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects

Decay time measurement of the luminescence of CuCl excited by a picosecond laser

E. Ostertag and J. B. Grun

Appl. Phys. Lett. 31, 509 (1977); http://dx.doi.org/10.1063/1.89748 (3 pages) | Cited 1 time

Online Publication Date: 26 August 2008

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The luminescence of CuCl excited by a mode‐locked Nd3+ : YAG laser is studied at liquid‐helium temperature. It is recorded through an optical Kerr cell, used as a sampling gate, by an optical multichannel analyzer synchronized to the mode‐locked laser. At the excitation intensity used, athe luminescence of CuCl is essentially due to the radiative decay of biexcitons. The decay of this luminescence contains two components, a fast one (τ≃95 ps) followed by a slower one (τ≃450 ps).
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78.55.Hx Other solid inorganic materials
71.35.-y Excitons and related phenomena

Laser‐target retropulse isolation using an aperture in vacuum

R. F. Benjamin, D. B. Henderson, K. B. Mitchell, M. A. Stroscio, and J. Thomas

Appl. Phys. Lett. 31, 511 (1977); http://dx.doi.org/10.1063/1.89749 (2 pages) | Cited 7 times

Online Publication Date: 26 August 2008

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The plasma created near an aperture in vacuum is found to be an effective retropulse isolator for CO2 laser light. The plasma created by a subjoule CO2 beam remains overdense at least 50 ns after the CO2 pulse.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.75.Kq Plasma switches (e.g., spark gaps)

The influence of diluent gas on the XeF laser

L. F. Champagne and N. W. Harris

Appl. Phys. Lett. 31, 513 (1977); http://dx.doi.org/10.1063/1.89750 (3 pages) | Cited 43 times

Online Publication Date: 26 August 2008

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Substitution of neon for argon as the diluent gas in electron‐beam‐pumped XeF lasers allows increased optical extraction energies of 2.8 J l−1 and efficiencies of 1.8%. The improved performance in neon diluent is due to a reduction of the optical absorption in the laser medium which occurs at the laser wavelength. This optical absorption is shown to be present when the rare gases along are irradiated.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Fabrication of graded‐index fibers without an index dip by chemical vapor deposition method

Takeshi Akamatsu, Koji Okamura, and Yoichi Ueda

Appl. Phys. Lett. 31, 515 (1977); http://dx.doi.org/10.1063/1.89759 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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When optical fibers are prepared by the (CVD) technique, an index dip often appears at the core center. The index dip reduces the coupling efficiency to optical sources and also it reduces the transmission bandwidth. This index dip in the core with germania‐doped silica could be eliminated successfully with a flow of the vapors of controlled proportion of GeCl4 and O2 during the collapse. The graded‐index fibers without dip were prepared by this technique. The bandwidth was increased from 500 to 800 MHz : km and the coupling efficiency by 20% when the index profile was controlled and the index dip was eliminated.
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42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.70.Ce Glasses, quartz

Evolution of polarization along a single‐mode fiber

A. Simon and R. Ulrich

Appl. Phys. Lett. 31, 517 (1977); http://dx.doi.org/10.1063/1.89760 (4 pages) | Cited 35 times

Online Publication Date: 26 August 2008

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The local parameters of linear and circular birefringence are nondestructively measured along a single‐mode optical fiber by electro‐optic and magneto‐optic modulation of the polarization in the fiber. A complete mapping of the evolution of the state of polarization is obtained and is compared with a theoretical model.
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42.81.-i Fiber optics
42.25.Ja Polarization

Micromechanical light modulator array fabricated on silicon

K. E. Petersen

Appl. Phys. Lett. 31, 521 (1977); http://dx.doi.org/10.1063/1.89761 (3 pages) | Cited 22 times

Online Publication Date: 26 August 2008

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A micromechanical device is described which consists of a thin metal‐coated SiO2 membrane fabricated on an ordinary silicon wafer using techniques compatible with IC processing. The membrane can be deflected electrostatically over large angles (≳5°), at high frequencies (≳40kHz), at least 1010 times without breaking or any noticeable deterioration due to fatigue. A number of adjacent devices have been used as a 16‐element light modulator array in a small display system. Calculations of performance parameters are in good agreement with experiment. Advantages of this device over similar previous deformagraphic systems are IC compatibility, good voltage sensitivity, high speed, higher deflections with less fatigue, well‐established fabrication techniques, and the possibility of integrating driving and decoding circuitry on the same chip as the modulators. In addition, the complexities of a vacuum environment and e‐beam addressing are avoided.
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42.79.Hp Optical processors, correlators, and modulators
07.07.Hj Display and recording equipment, oscilloscopes, TV cameras, etc.
85.40.Bh Computer-aided design of microcircuits; layout and modeling
85.60.Pg Display systems

A novel double‐heterostructure p‐n‐junction laser

A. J. SpringThorpe

Appl. Phys. Lett. 31, 524 (1977); http://dx.doi.org/10.1063/1.89762 (2 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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Oxide‐stripe laser and Burrus LED technologies have been combined to enable DH GaAlAs p‐n‐junction lasers with emission perpendicular to the junction plane to be prepared.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Selenium implanation into silicon studied by DLTS technique

F. Richou, G. Pelous, and D. Lecrosnier

Appl. Phys. Lett. 31, 525 (1977); http://dx.doi.org/10.1063/1.89763 (3 pages) | Cited 19 times

Online Publication Date: 26 August 2008

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Deep‐level transient spectroscopy (DLTS) has been used to determine the activation energy and spatial distribution of the electron traps introduced n‐type silicon implanted with 5×1010Se ions/cm2 at 800 keV. Radiation damage levels were demonstrated to be present up to a 600 °C anneal. After 700 °C anneal, two deep levels were found at Ec−0.225 eV and Ec−0.485 eV. The in‐depth distributions of the Ec−0.225 eV level after 600 °C anneal and of the two levels after the 700 °C anneal were determined. So, it was found that selenium is a fast diffuser and that each implanted Se ion forms one trap with two levels.
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61.72.U- Doping and impurity implantation
71.55.-i Impurity and defect levels

Amorphous threshold switch response to pulse burst waveforms

D. K. Reinhard

Appl. Phys. Lett. 31, 527 (1977); http://dx.doi.org/10.1063/1.89764 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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The switching response of thin‐film amorphous chalcogenide threshold switches to pulse bursts of sine waves and square waves is reported. For the waveforms and devices investigated, preswitching behavior as evidenced by the delay time is a function of the rms voltage applied to the device. Switching voltages were slightly greater than the minimum required for switching.
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72.20.Ht High-field and nonlinear effects
72.15.Cz Electrical and thermal conduction in amorphous and liquid metals and alloys
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

SIMS evaluation of contamination on ion‐cleaned (100) InP substrates

M. G. Dowsett, R. M. King, and E. H. C. Parker

Appl. Phys. Lett. 31, 529 (1977); http://dx.doi.org/10.1063/1.89765 (3 pages) | Cited 13 times

Online Publication Date: 26 August 2008

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Recent work has indicated that residual contamination on III‐V substrates has an adverse effect on epilayer nucleation. This letter presents preliminary results of measurements of contamination levels on methanol‐bromine polished ion‐cleaned (100) InP substrates using low [primary ion dose (<5×1012 ions mm−2) secondary ion mass] spectrometry (SIMS). Even after ion etching ≃0.48 μ from the surface residual contamination levels in the 100‐ppm range persist, the largest being oxygen. Micrographs of the ion‐cleaned surface showed precipitation of In at the surface which was caused by differential sputtering effects.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Cd Deposition by sputtering

Drift mobilities of Na+ and K+ ions in SiO2 films

J. P. Stagg

Appl. Phys. Lett. 31, 532 (1977); http://dx.doi.org/10.1063/1.89766 (2 pages) | Cited 31 times

Online Publication Date: 26 August 2008

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Na+ and K+ ion mobilities in thermally grown SiO2 films have been determined from transient ion curret measurements in MOS capacitors. The mobilities were determined from the observed transit times of Na+ and K+ ions measured in the temperature ranges 40–180 °C and 230–300 °C, respectively. For Na+ ions in both a dry‐grown oxide and one grown in a 10% HCl/oxygen mixture, μ=1.0 exp(−0.66 eV/kT) cm2/V sec. For K+ ions in a dry‐grown oxide, μ=0.03 exp(−1.09 eV/kT) cm2/V sec.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
72.20.Fr Low-field transport and mobility; piezoresistance
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Confined‐carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p‐n junction

E. A. Rezek, H. Shichijo, B. A. Vojak, and N. Holonyak

Appl. Phys. Lett. 31, 534 (1977); http://dx.doi.org/10.1063/1.89767 (3 pages) | Cited 31 times

Online Publication Date: 26 August 2008

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A thin (∼400 Å) LPE In1−xGaxP1−zAsz ’’trap’’ on the p‐type side of an InP junction [Eg(InP)−Eg(InGaPAs) ≡ΔE∼245 meV], is filled by injection to a high enough density to make it possible to observe confined‐particle states and laser modes in a 70‐meV (≳600 Å) range. The position of the modes is in good agreement with the transition energies expected for a finite potential well.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.60.-b Other luminescence and radiative recombination
71.20.-b Electron density of states and band structure of crystalline solids

Narrowband detection at long wavelengths with epitaxial PbySn1−ySe films

R. B. Schoolar and J. D. Jensen

Appl. Phys. Lett. 31, 536 (1977); http://dx.doi.org/10.1063/1.89768 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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Narrowband photovoltaic detectors were prepared using two PbySn1−ySe epitaxial layers of slightly different alloy compositions grown on BaF2 substrates. Using Pb to form Schottky barrier detectors has yielded devices with D∗λ (10.6 μm) =7.0×1010 cm Hz1/2 W−1 and spectral half‐bandwidths of 6000 Å. These devices are insensitive to variations in incident angle due to the large refractive indices of PbySn1−ySe.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.30.Hi Surface barrier, boundary, and point contact devices

The effect of gas‐phase stoichiometry on deep levels in vapor‐grown GaAs

M. D. Miller, G. H. Olsen, and M. Ettenberg

Appl. Phys. Lett. 31, 538 (1977); http://dx.doi.org/10.1063/1.89769 (3 pages) | Cited 38 times

Online Publication Date: 26 August 2008

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A deep (0.82 eV) impurity level has been observed via transient capacitance measurements in GaAs prepared under various gas‐phase stoichiometries. The density of these impurities increased with increasing AsH3/GaCl ratio in the vapor phase ranging from 2×1013 cm−3 for a 1/3 ratio to 9×1013 cm−3 for a 3/1 ratio. The minority‐carrier lifetime in these same samples decreased from 15 to 5 nsec with increasing AsH3/GaCl ratio. These deep levels, which serve as recombination centers for lifetime reduction, appear to originate from point defects introduced by deviations from stoichiometry toward the As‐rich side.
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72.80.Ey III-V and II-VI semiconductors
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes

Elimination on electron multipacting in superconducting structures for electron accelerators

C. M. Lyneis, H. A. Schwettman, and J. P. Turneaure

Appl. Phys. Lett. 31, 541 (1977); http://dx.doi.org/10.1063/1.89770 (3 pages) | Cited 11 times

Online Publication Date: 26 August 2008

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Electron multipacting in a 2.8‐GHz TM010‐mode anodized niobium test cavity at 1.4 K has been studied experimentally. An electron multipactor simulation computer program, which we developed, successfully calculates the multipactor field levels and multipactor location observed experimentally and also provides additional details of the multipactor phenomena. With the multipactor simulation program, a sharp‐cornered TM010‐mode cavity has been designed in which multipacting is greatly reduced. A subsequent experiment on such a sharp‐cornered anodized niobium cavity has shown that electron multipacting is in fact eliminated for this cavity up through the highest field achieved. This work has shown that, with a simple modification in geometry, multipacting can probably be eliminated in the superconducting structure for the Stanford electron accelerator.
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29.20.Ej Linear accelerators
79.20.Hx Electron impact: secondary emission
74.25.N- Response to electromagnetic fields
85.25.-j Superconducting devices

The electronic and nuclear stopping of energetic ions

J. F. Ziegler

Appl. Phys. Lett. 31, 544 (1977); http://dx.doi.org/10.1063/1.89771 (3 pages) | Cited 49 times

Online Publication Date: 26 August 2008

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The electronic contribution to stopping of 127 ion‐target combinations is calculated by the use of an expression for scaling from proton stopping powers. The scaling is found to be accurate, with a standard error of 4.5% relative to experimental measurements. Also, an evaluation is made of a recently proposed nuclear stopping formalism and evidence is found that it is more accurate than LSS nuclear stopping.
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29.40.-n Radiation detectors
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