APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 Nov 1977

Volume 31, Issue 9, pp. 551-637

Page 1 of 2 Pages Next Page | Jump to Page

Liquid‐phase‐epitaxial growth of lattice‐matched In0.53Ga0.47As on (100) ‐oriented InP

S. B. Hyder, G. A. Antypas, J. S. Escher, and P. E. Gregory

Appl. Phys. Lett. 31, 551 (1977); http://dx.doi.org/10.1063/1.89803 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Growth of InGaAs lattice matched to InP was achieved for the first time on the (100) orientation of InP by liquid‐phase epitaxy. Growth conditions and melt composition for such a growth are presented. In0.53Ga0.47As/InP and InP/In0.53Ga0.47As/InP heterojunction structures for 1.7‐μm field‐assisted photocathodes have also been fabricated on (100) InP substrates.
Show PACS
81.10.Fq Growth from melts; zone melting and refining
85.60.Dw Photodiodes; phototransistors; photoresistors

A model of switching and negative resistance phenomenon in organic thin film with dipoles

Chun Chiang

Appl. Phys. Lett. 31, 553 (1977); http://dx.doi.org/10.1063/1.89804 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Thin films formed by organic molecules with dipoles may switch at a threshold voltage; the switching is due to the flip‐flop of the dipoles. Theoretically derived equations agree well with the experiment.
Show PACS
84.32.Dd Connectors, relays, and switches
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.15.+e Liquid thin films

A new acoustophotorefractive effect in lithium niobate

N. J. Berg, B. J. Udelson, and J. N. Lee

Appl. Phys. Lett. 31, 555 (1977); http://dx.doi.org/10.1063/1.89781 (3 pages) | Cited 14 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A new photorefractive effect resulting from the interaction of high‐intensity short‐duration laser pulses with propagating acoustic waves has been found to occur in LiNbO3. The index‐of‐refraction change (δn) is proportional to the rf signal and increases sublinearly with the number of laser pulses and as the 1.3 power of the incident laser energy density (J) per pulse. The decay time of δn varies from a few hours when only green illumination (530 nm) is used to several weeks when combined green and infrared illumination (1060 nm) are used. This acoustophotorefractive effect can be utilized to construct an acousto‐optic memory correlator.
Show PACS
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Acoustoelectric SAW phase shifter

J. D. Crowley, J. F. Weller, and T. G. Giallorenzi

Appl. Phys. Lett. 31, 558 (1977); http://dx.doi.org/10.1063/1.89805 (3 pages) | Cited 5 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
A new acoustoelectric phase shifter is proposed which produces a direct phase shift of a SAW on piezoelectric substrate. Computations of the attenuation and phase lag versus resistivity due to a silicon wafer air‐gap coupled to yz‐LiNbO3 are presented. The use of the variation of the resistivity of the silicon to control the phase of a SAW was demonstrated using the photogeneration of carriers and the field‐effect control of the surface resistivity. A 180° shift was obtained with a +30‐V transverse voltage pulse.
Show PACS
72.50.+b Acoustoelectric effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.58.+z Acoustical measurements and instrumentation

Fabrication‐related effects in metal‐ZnO‐SiO2‐Si structures

M. E. Cornell, J. K. Elliott, R. L. Gunshor, and R. F. Pierret

Appl. Phys. Lett. 31, 560 (1977); http://dx.doi.org/10.1063/1.89806 (3 pages) | Cited 4 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Experimental results are presented which show that the nonideal nature of electrical characteristics derived from metal‐ZnO‐SiO2‐Si structures, structures of the type proposed in surface‐acoustic‐wave applications, is due in large part to a deterioration of the Si‐SiO2 subsystem during the thin‐film ZnO deposition procedure. The thermally assisted breaking of surface‐state bonds and radiation damage are identified as the sources of the deterioration. Progress achieved to date in reducing the cited damage, including the use of radiation‐hardened SiO2 films and a low‐temperature O2 anneal, are also described and discussed.
Show PACS
81.15.Cd Deposition by sputtering
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Reflection spectrum distortion due to Bragg‐frequency variation in tapered highly reflective surface‐wave gratings

P. S. Cross

Appl. Phys. Lett. 31, 562 (1977); http://dx.doi.org/10.1063/1.89807 (3 pages)

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The normal‐incidence reflection spectrum of a tapered highly reflective (∼95%) surface‐wave grating is found experimentally and theoretically to have high sidelobes due to the taper‐induced spatial variation in the local Bragg frequency. In order to successfully use tapering for reflection sidelobe suppression, the Bragg‐frequency variation is compensated by varying the grating period. Experimental results are presented for the reflection of surface acoustic waves from metal dot arrays on yz‐LiNbO3 at ∼145 MHz. The taper‐induced distortion of the reflection spectrum is expected to occur in corrugated optical waveguide reflectors as well.
Show PACS
43.20.Fn Scattering of acoustic waves
43.35.Pt Surface waves in solids and liquids
42.82.-m Integrated optics

A critical temperature for the growth of SiC on Si and its effect on stacking‐fault nucleation in Si homoepitaxy in high vacuum

F. W. Smith, B. Meyerson, and W. Miller

Appl. Phys. Lett. 31, 565 (1977); http://dx.doi.org/10.1063/1.89808 (3 pages) | Cited 2 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
During a study of the homoepitaxial growth of Si on Si(111), we have found that stacking‐fault densities in the deposited Si films decreased by two to three orders of magnitude above a ’’critical’’ substrate deposition temperature, 1250 °C. Nucleation of stacking faults in the deposited films is correlated, via SEM observations and infrared absorption measurements, with the presence of SiC protuberances on the substrate surface. We propose a simple model for SiC cluster growth (and decay) which explains the rapid decrease with temperature of the amount of SiC formed on the Si surface.
Show PACS
68.55.-a Thin film structure and morphology
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
61.72.Nn Stacking faults and other planar or extended defects
81.10.Bk Growth from vapor

Photoelectrolysis of water at high current density: Use of ultraviolet laser excitation

Andrew B. Bocarsly, Jeffrey M. Bolts, Phillip G. Cummins, and Mark S. Wrighton

Appl. Phys. Lett. 31, 568 (1977); http://dx.doi.org/10.1063/1.89809 (3 pages) | Cited 17 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The behavior of TiO2 and SrTiO3 photoanodes in cells for the photoelectrolysis of H2O has been investigated for high‐intensity 351 364‐nm excitation from an Ar ion laser. Intensities up to 380 W/cm2 have been used. For TiO2 a small amount of surface decomposition is found after irradiation at high intensity, whereas SrTiO3 undergoes no detectable changes. Current‐voltage properties for both electrodes are essentially independent of light intensity up to the level of 380 W/cm2, and there is little if any change in quantum efficiency for electron flow. Photocurrent densities have been shown to exceed 5 A/cm2 for O2 evolution. Data show that the energy storage rate associated with the SrTiO3 photoelectrolysis can exceed 30 W/cm2; this represents the highest demonstrated rate of sustained optical to chemical energy conversion.
Show PACS
73.40.Mr Semiconductor-electrolyte contacts
82.47.-a Applied electrochemistry
84.60.Ve Energy storage systems, including capacitor banks
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes

The expansion velocities of laser‐produced plasmas determined from extreme ultraviolet spectral line profiles

U. Feldman, G. A. Doschek, W. E. Behring, and Leonard Cohen

Appl. Phys. Lett. 31, 571 (1977); http://dx.doi.org/10.1063/1.89782 (3 pages) | Cited 8 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The expansion of laser‐produced plasma is determined from the shapes of spectral lines of highly ionized iron emitted in the extreme ultraviolet. The plasmas were produced by focusing the pulse from a Nd : glass laser onto solid planar targets, and spectra were recorded with a high‐resolution grazing incidence spectrograph. From the Doppler broadening of lines of Fe XX and Fe XXI, expansion velocities of ∼830 km s−1 were determined. The relative time‐averaged ion abundances of Fe XVIII, Fe XIX, Fe XX, and Fe XXI are estimated for three different spectra. The abundances do not differ by more than a factor of 4 for any of the spectra.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Resonant enhancement of the magnetic radiative force

J. A. Stamper

Appl. Phys. Lett. 31, 574 (1977); http://dx.doi.org/10.1063/1.89783 (2 pages) | Cited 2 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Earlier work described a polarization‐dependent radiation force for laser radiation interacting with a magnetized plasma. A new derivation, based on the upper‐hybrid mode, shows that this force has a resonant enhancement and implies its relation to a magnetic type of resonant absorption.
Show PACS
52.40.-w Plasma interactions (nonlaser)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Deuterium isotope enrichment in methane‐hydrogen mixtures subjected to a low‐temperature glow discharge

T. J. Manuccia and C. E. Geosling

Appl. Phys. Lett. 31, 575 (1977); http://dx.doi.org/10.1063/1.89784 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Significant enrichment of deuterium has been demonstrated in flowing CH4‐H2 mixtures subjected to a low‐temperature glow discharge. In the best case, over 500% enrichment per stage was measured. A pronounced translational temperature effect was observed with the optimum enrichment occurring at Twall=−105 °C.
Show PACS
28.60.+s Isotope separation and enrichment
82.20.Tr Kinetic isotope effects including muonium
52.80.Hc Glow; corona

Electron trap annealing in neutron transmutation doped silicon

J. Guldberg

Appl. Phys. Lett. 31, 578 (1977); http://dx.doi.org/10.1063/1.89785 (2 pages) | Cited 15 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n‐Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes.
Show PACS
61.80.Hg Neutron radiation effects
78.40.Fy Semiconductors

Plasmon‐loss satellites in Auger spectra of alloy surfaces

T. S. Sun, J. M. Chen, R. K. Viswanadham, and J. A. S. Green

Appl. Phys. Lett. 31, 580 (1977); http://dx.doi.org/10.1063/1.89786 (3 pages) | Cited 7 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Grain‐boundary surfaces of Al‐Zn‐Mg alloys have been studied with Auger electron spectroscopy. Particular emphasis was given to plasmon loss satellites in the Auger spectrum. It is found that the plasmon energy losses associated with Al, Zn, and Mg Auger peaks are different, and the energy losses vary with heat treatment of the alloy. These variations provide information on chemical composition and nonhomogeneities in an alloy, such as precipitation and segregation. It is shown that, at the grain boundary of aged specimens of the Al alloy, the Zn atoms are all in the form of MgZn2 precipitates, but only about 40% of the total Mg is in the precipitates. The other 60% is situated outside of the precipitates.
Show PACS
79.20.Fv Electron impact: Auger emission
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging

The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon

G. J. Clark, C. W. White, D. D. Allred, B. R. Appleton, C. W. Magee, and D. E. Carlson

Appl. Phys. Lett. 31, 582 (1977); http://dx.doi.org/10.1063/1.89787 (4 pages) | Cited 31 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Depth profiles for hydrogen in amorphous silicon have been determined by the use of resonant nuclear reactions [1H(15N,αγ)12C and 1H(19F,αγ)16O] and by secondary ion mass spectroscopy (SIMS). Independent calibration procedures were used for the two techniques. Measurements were made on the same amorphous silicon film to provide a direct comparison of the two hydrogen analysis techniques. The hydrogen concentration in the bulk of the film was determined to be about 9 at.% H. The SIMS results agree with the resonant nuclear reaction results to within 10%, which demonstrates that quantitative hydrogen depth profiles can be obtained by SIMS analysis for materials such as amorphous silicon.
Show PACS
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Jp Activation analysis and other radiochemical methods

Changes in x‐ray diffraction patterns of polyvinylidene fluoride due to corona charging

D. K. Das Gupta and K. Doughty

Appl. Phys. Lett. 31, 585 (1977); http://dx.doi.org/10.1063/1.89788 (3 pages) | Cited 44 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The changes in the x‐ray diffraction patterns of 16‐ and 25‐μm‐thick polyvinylidene fluoride films, caused by 6‐kV corona charging at room temperature, are presented. The diffraction peaks corresponding to (100) and (020) α‐crystalline forms tend to be considerably reduced while the (110) β‐form peak changes in shape and position.
Show PACS
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
61.41.+e Polymers, elastomers, and plastics
73.40.-c Electronic transport in interface structures

Microscale degradation in (GaAl)As double‐heterostructure diode lasers

Daisuke Kato

Appl. Phys. Lett. 31, 588 (1977); http://dx.doi.org/10.1063/1.89789 (3 pages) | Cited 14 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
The generation of self‐sustained pulsations in degraded (GaAl)As double‐heterostructure diode lasers is explained by invoking microscale absorption centers possessing a large cross section. The microscale degradation centers are found to affect the laser characteristics at a concentration level as low as 1014–1015 cm−3.
Show PACS
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.30.De Semiconductor-device characterization, design, and modeling
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.55.Px Semiconductor lasers; laser diodes

Superconducting weak links induced by optical guided waves

A. Gilabert, D. B. Ostrowsky, C. Vanneste, M. Papuchon, and B. Puech

Appl. Phys. Lett. 31, 590 (1977); http://dx.doi.org/10.1063/1.89790 (3 pages) | Cited 6 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Superconducting weak links have been created by locally weakening the superconductivity of a narrow thin‐film lead strip via the evanescent field of an optical guided wave. Existence of the Josephson junction behavior of these links was confirmed by examination of their behavior in applied magnetic fields.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
42.79.Gn Optical waveguides and couplers

Conjugate wave‐front generation and image reconstruction by four‐wave mixing

D. M. Bloom and G. C. Bjorklund

Appl. Phys. Lett. 31, 592 (1977); http://dx.doi.org/10.1063/1.89791 (3 pages) | Cited 78 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Operation of a new nonlinear backward‐wave optical device which produces the conjugate of an arbitrary incident wave front is demonstrated. Good‐quality reconstructed images are obtained through a phase distorting media.
Show PACS
42.65.-k Nonlinear optics
42.30.Va Image forming and processing

uv fluorescence of cerium‐doped lutetium and lanthanum trifluorides, potential tunable coherent sources from 2760 to 3220 Å

K. H. Yang and J. A. DeLuca

Appl. Phys. Lett. 31, 594 (1977); http://dx.doi.org/10.1063/1.89792 (3 pages) | Cited 29 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Broad‐band uv flurescence is reported for LaF2 : Ce3+ (2760–3120 Å) and LuF3 : Ce3+ (2880–3220 Å). The five‐peak excitation spectrum expected for the 5d state of Ce3+ in a noncubic crystal field is observed. The fluorescence quantum yields for LaF3 : 1% Ce3+ and LuF3 : 0.1% Ce3+ are 0.9 and 0.82, respectively. Estimates of the threshold power for lasing action suggest that a laser system tunable from 2760 to 3220 Å is feasible with noble‐gas–halide lasers as pumping sources.
Show PACS
78.55.Hx Other solid inorganic materials
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems

Overtone bands lasing at 2.7–3.1 μm in electrically excited CO

R. C. Bergman and J. W. Rich

Appl. Phys. Lett. 31, 597 (1977); http://dx.doi.org/10.1063/1.89793 (3 pages) | Cited 10 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Lasing on the first overtone vibrational‐rotational transitions of carbon monoxide is reported. The laser is a supersonic flow laser, which uses an electric‐discharge‐excited CO/He/O2 mixture. 20 W cw power at 0.6% electrical efficiency is obtained.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Ez Rotational and vibrational energy transfer

Photoionization of metastable rare‐gas atoms (He∗,Ne∗,Ar∗,Kr∗,Xe∗)

K. J. McCann and M. R. Flannery

Appl. Phys. Lett. 31, 599 (1977); http://dx.doi.org/10.1063/1.89794 (3 pages) | Cited 41 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Cross sections σ for the photoionization of metastable rare‐gas atoms (He∗‐Xe∗) over a wide range of photon energies are presented. In marked contrast to that found for He∗ where σ∼10−18 cm2 and decreases monotonically with photon energy, the cross sections σ for Ne∗‐Xe∗ are much smaller ∼10−19 cm2 and exhibit optical windows within the wavelength range 2000–3000 Å of current laser interest.
Show PACS
32.80.Fb Photoionization of atoms and ions
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Infrared holography on commerical wax at 10.6 μm

R. Beaulieu, R. A. Lessard, M. Cormier, M. Blanchard, and M. Rioux

Appl. Phys. Lett. 31, 602 (1977); http://dx.doi.org/10.1063/1.89795 (2 pages) | Cited 7 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Holograms have been recorded with far‐infrared radiation (10.6 μm) on ’’Takiwax’’ films. The relief‐phase holograms obtained due to the thermal process involved are reconstructed, in real time, with He‐Ne laser light. Reconstruction from grating holograms in the infrared with 10.6‐μm CO2 laser radiation is also possible: diffraction efficiencies of up to 15% have been measured for two‐beam gratings.
Show PACS
42.40.Kw Holographic interferometry; other holographic techniques
42.40.Ht Hologram recording and readout methods

Fast optically controlled modulator for a CO2 laser using two‐photon magnetoabsorption effects in CdS

V. T. Nguyen, T. C. Damen, E. Gornik, and C. K. N. Patel

Appl. Phys. Lett. 31, 603 (1977); http://dx.doi.org/10.1063/1.89796 (4 pages) | Cited 2 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
We report the use of the two‐photon magnetoabsorption effects due to excitons in CdS to obtain a fast modulator for a CO2 laser beam. The modulator is controlled by short optical pulses from a visible‐light dye laser. 4‐nsec pulses of 75 W peak power of a CO2 laser beam have been produced by using this technique which is potentially capable of generation of psec optical pulses in the infrared.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
78.20.Ls Magneto-optical effects
42.65.-k Nonlinear optics

The study of laser processes by millimeter and submillimeter microwave spectroscopy

Frank C. De Lucia

Appl. Phys. Lett. 31, 606 (1977); http://dx.doi.org/10.1063/1.89797 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Millimeter and submillimeter microwave spectroscopy is shown to be a powerful technique for the study of the fundamental processes of molecular lasers. The calculation of absolute chemical compositions, excitation parameters, and the observation of collisional deexcitation are demonstrated for the HCN FIR laser.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Ea Infrared spectra
52.70.Gw Radio-frequency and microwave measurements

Mercuric bromide photodissociation laser

E. J. Schimitschek, J. E. Celto, and J. A. Trias

Appl. Phys. Lett. 31, 608 (1977); http://dx.doi.org/10.1063/1.89798 (3 pages) | Cited 76 times

Online Publication Date: 26 August 2008

Full Text: | Download PDF

Show Abstract
Laser action was achieved on the B 2Σ+→X 2Σ+ transition of the HgBr radical by photodissociating HgBr2 in the vapor phase. The pump radiation was the 193‐nm output of an ArF excimer laser. The measured laser wavelengths range from 502 to 505 nm. In transverse excitation, the measured output energy of the HgBr laser was 0.25 mJ at a pump energy of 7 mJ.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Gj Diffuse spectra; predissociation, photodissociation
82.50.Hp Processes caused by visible and UV light
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close