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1 Nov 1977

Volume 31, Issue 9, pp. 551-637

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Room‐temperature interfacial reaction in Au‐semiconductor systems

A. Hiraki, K. Shuto, S. Kim, W. Kammura, and M. Iwami

Appl. Phys. Lett. 31, 611 (1977); http://dx.doi.org/10.1063/1.89799 (2 pages) | Cited 93 times

Online Publication Date: 26 August 2008

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Au(evaporated film) ‐semiconductor(substrate) systems were studied by Auger electron spectroscopy. For semiconductors with energy gaps (Eg) smaller than ∼2.5 eV, even at room temperature a considerable fraction of atoms constituting the semiconductors were found to accumulate on the surfaces of Au films, indicating ready interfacial interaction between these materials. Study of the interface regions of the above systems verified the occurrence of the room‐temperature interfacial reactions.
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73.40.Ns Metal-nonmetal contacts
79.20.Fv Electron impact: Auger emission

Highly collimated broadside emission from room‐temperature GaAs distributed Bragg reflector lasers

W. Ng and A. Yariv

Appl. Phys. Lett. 31, 613 (1977); http://dx.doi.org/10.1063/1.89800 (3 pages) | Cited 15 times

Online Publication Date: 26 August 2008

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Highly collimated laser beams have been observed to be coupled out by second‐order Bragg scattering from GaAs distributed Bragg reflector lasers. The beams are perpendicular to the waveguide plane and have an angular width of less than 1°. The diodes have a separate confinement structure and operate at room temperature with thresholds as low as 1.4 kA/cm2.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
85.60.Jb Light-emitting devices

Thin‐film machining by laser‐induced explosion

Vicent J. Zaleckas and Jackson C. Koo

Appl. Phys. Lett. 31, 615 (1977); http://dx.doi.org/10.1063/1.89801 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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This paper describes a process for the laser machining of thin metallic films on dielectric substrates. The observation of a distinct minimum in the machining threshold and the fact that no substrate damage occurs over a wide range of incident power are explained based on an explosive film‐removal mechanism. Experimental results supporting the predictions are presented.
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79.20.Ds Laser-beam impact phenomena
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
42.60.-v Laser optical systems: design and operation
44.10.+i Heat conduction

Electromechanical devices utilizing thin Si diaphragms

H. Guckel, S. Larsen, M. G. Lagally, G. Moore, J. B. Miller, and J. D. Wiley

Appl. Phys. Lett. 31, 618 (1977); http://dx.doi.org/10.1063/1.89802 (2 pages) | Cited 14 times

Online Publication Date: 26 August 2008

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Heavy boron diffusion followed by selective etching has been used to produce uniform edge‐supported Si diaphragms with thickness in the 1–3‐μ range and areas up to 5 cm2. These diaphragms have numerous applications in the fabrication of rugged reliable electromechanical devices which are compatible with IC technology. In this paper we describe the performance of an electrically tunable resonant cavity which operates in the 10–12‐kHz range with Q as high as 23 000. Devices based on this cavity structure include pressure transducers, microphones, speakers, tunable filters, and oscillators.
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43.38.Gy Semiconductor transducers
84.30.Ng Oscillators, pulse generators, and function generators
84.30.Vn Filters

Composition‐tuned PbSxSe1−x Schottky‐barrier infrared detectors

R. B. Schoolar, J. D. Jensen, and G. M. Black

Appl. Phys. Lett. 31, 620 (1977); http://dx.doi.org/10.1063/1.89773 (3 pages) | Cited 9 times

Online Publication Date: 26 August 2008

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Schottky‐barrier photodiodes were prepared by depositing either lead or indium onto p‐type PbSxSe1−x epitaxial films. These photodiodes had 77 °K zero‐bias resistance‐area products of 26–21 000 Ω cm2 as x varied from 0 to 1, respectively. The peak detectivities were close to the background limit and could be composition tuned between 3.7 and 6.9 μm at 77 °K. Narrowband detectors were prepared by using one film as a short‐wavelength cutoff filter and a second film, of slightly different composition, as the detector. These devices exhibit high quantum efficiencies, low half‐bandwidths, and insensitivity to variations in incident angle.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors
73.30.+y Surface double layers, Schottky barriers, and work functions

Transient capacitance measurements of hole emission from interface states in MOS structures

M. Schulz and N. M. Johnson

Appl. Phys. Lett. 31, 622 (1977); http://dx.doi.org/10.1063/1.89774 (4 pages) | Cited 67 times

Online Publication Date: 26 August 2008

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The energy spectrum of MOS interface states and the capture cross section for holes have been measured in p‐type silicon by transient capacitance spectroscopy. In MOS capacitors with interface state densities of <1010 cm−2 eV−1 near midgap, the density decreases with energy towards the valence‐band edge over the measurement range of 0.17 <E−Ev<0.6 eV. The capture cross section for holes is of the order of 5×10−13 cm2 and is independent of temperature and energy. It appears that the measured distribution consists of acceptor states that extend from the conduction band into the lower half of the silicon forbidden band. The absence of a detectable signal from interface states in a valence‐band tail implies that the capacitance transient for hole emission is outside the measurement range. A sharply peaked signal observed for electron (minority carrier) capture at high temperatures indicates that these states are present, but have an extremely low capture cross section for holes, ⩽10−23 cm2.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Effects of facet coatings on the degradation characteristics of GaAs‐Ga1−xAlxAs DH lasers

Y. Shima, N. Chinone, and R. Ito

Appl. Phys. Lett. 31, 625 (1977); http://dx.doi.org/10.1063/1.89775 (3 pages) | Cited 27 times

Online Publication Date: 26 August 2008

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Facet damage which is one of the major mechanisms of slow degradation has been virtually eliminated with Al2O3 facet coatings. Al2O3 half‐wave films deposited by the conventional CVD method have been found to be effective not only for minimizing facet erosion but also for increasing the catastrophic failure limit by about a factor of 2.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
42.60.By Design of specific laser systems
42.79.Wc Optical coatings

Degradation of high‐radiance Ga1−xAlxAs LED’s

Shigenobu Yamakoshi, Osamu Hasegawa, Hisashi Hamaguchi, Masayuki Abe, and Toyoshi Yamaoka

Appl. Phys. Lett. 31, 627 (1977); http://dx.doi.org/10.1063/1.89776 (3 pages) | Cited 26 times

Online Publication Date: 26 August 2008

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The slow degradation of single‐heterostructure Ga1−xAlxAs LED’s has been investigated. The samples which show the fast degradation are completely rejected by the selection of DLD‐free LED’s. Selection procedures and the results of accelerated aging tests for over 10 000 h are presented. The activation energy of the slow degradation is found to be 0.57 eV. Extrapolated room‐temperature half‐life in excess of 5×106 h is estimated. The degradation coefficients are not affected significantly by the operating current density (3.5–10 kA/cm2).
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85.60.Jb Light-emitting devices
81.70.-q Methods of materials testing and analysis
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.60.Fi Electroluminescence

High‐efficiency GaAs shallow‐homojunction solar cells

Carl O. Bozler and John C. C. Fan

Appl. Phys. Lett. 31, 629 (1977); http://dx.doi.org/10.1063/1.89777 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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Conversion efficiencies as high 15.3% (17% when corrected for contact area) have been obtained for single‐crystal antireflection‐coated GaAs solar cells fabricated without the use of Ga1−xAlxAs layers. These devices employ a thin n+/p/p+ structure prepared by chemical vapor deposition, in which surface recombination losses are reduced because the n+ layer is so thin (1300 Å) that most of the carriers are generated in the p layer below the junction.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects

GaAs waveguide detectors for 1.06 μm

K. H. Nichols, W. S. C. Chang, C. M. Wolfe, and G. E. Stillman

Appl. Phys. Lett. 31, 631 (1977); http://dx.doi.org/10.1063/1.89778 (3 pages) | Cited 3 times

Online Publication Date: 26 August 2008

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GaAs electroabsorption avalanche photodiodes in n‐n+ GaAs waveguides have been used to detect the 1.06‐μm radiation from a Nd : YAG laser with a responsivity of 125 A/W and an internal quantum efficiency of 23%. The response at this wavelength is due to a combination of band‐to‐band and defect‐to‐band electroabsorption.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.20.Jq Electro-optical effects

Effect of substrate temperature on the microstructure of thin‐film silicide

U. Köster, K. N. Tu, and P. S. Ho

Appl. Phys. Lett. 31, 634 (1977); http://dx.doi.org/10.1063/1.89779 (3 pages) | Cited 18 times

Online Publication Date: 26 August 2008

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The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher‐temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100 °C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200 °C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a Ts of 300 °C, the microstructure of Pd2Si is spongy and grains are much less oriented.
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68.55.-a Thin film structure and morphology
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Negative resistance in a triple‐barrier structure of Al‐Al2O3

Sadao Takabe, Kanji Yasui, and Shigeo Kaneda

Appl. Phys. Lett. 31, 636 (1977); http://dx.doi.org/10.1063/1.89780 (2 pages) | Cited 2 times

Online Publication Date: 26 August 2008

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An experimental study of tunneling currents in thin multilayers of Al‐Al2O3 has been performed. Negative resistances are observed at 77 °K in a triple‐barrier structure. It is considered that these negative resistances are caused by the effect of resonant tunneling, compared to the theoretical consideration of quasistationary energy levels in such a structure.
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73.40.Rw Metal-insulator-metal structures
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
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