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15 Jun 1978

Volume 32, Issue 12, pp. 787-831


Effect of groove‐depth variation on the performance of uniform SAW grooved reflector arrays

J. P. Parekh and H. S. Tuan

Appl. Phys. Lett. 32, 787 (1978); http://dx.doi.org/10.1063/1.89930 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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Computations of the variation with groove depth of the SAW scattering properties of a uniform shallow‐grooved reflector array are reported for an equivalent isotropic elastic substrate representing Y‐cut Z‐propagating LiNbO3. In agreement with previous qualitative conclusions based on experimental studies of SAW grooved resonators, the present computations indicate the existence of an optimum groove depth yielding maximum array SAW reflectivity. This optimum groove depth is a monotonically decreasing function of the total number N of grooves in the array. Computed optimum groove depths for various fixed values of N are presented.
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43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Acoustic microscopy at optical wavelengths

V. Jipson and C. F. Quate

Appl. Phys. Lett. 32, 789 (1978); http://dx.doi.org/10.1063/1.89931 (3 pages) | Cited 29 times

Online Publication Date: 8 August 2008

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Recent advances in the field of acoustic microscopy have allowed the instrument to be operated at wavelengths that correspond to the center of the optical band. Experimental results in the form of acoustic micrographs are presented and compared to their optical counterparts. It is apparent that the resolving power of the instrument is similar to that of the optical microscope. Also it is seen that the acoustic micrographs yield information on the subsurface region. This information is not available in the optical images.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.20.Hq Velocity and attenuation of acoustic waves

Intense ion‐beam neutralization in free space

S. Humphries

Appl. Phys. Lett. 32, 792 (1978); http://dx.doi.org/10.1063/1.89932 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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Electron neutralization is a key feature in the propagation of intense ion beams. A one‐dimensional sheath solution is given that demonstrates how electrons are captured by a transient ion beam emerging into a field‐free vacuum. Conditions for space‐charge and current neutralization are discussed. The importance of the electron distribution in determining the minimum spot size of a focused ion beam is considered.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
07.77.-n Atomic, molecular, and charged-particle sources and detectors
29.27.Eg Beam handling; beam transport

Surface‐potential decay in naphthalene

M. Campos and J. A. Giacometti

Appl. Phys. Lett. 32, 794 (1978); http://dx.doi.org/10.1063/1.89933 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Surface‐potential decay in naphthalene single crystals was measured after a negative corona discharge on the samples. These potential decay curves do not reach zero value, which is attributed to charges which have been trapped on their way through the sample. The value found for the trap‐modulated mobility at room temperature was 10−8 cm2 V−1 s−1 and its dependence on temperature was adequately described by an Arrhenius equation, with activation energy of (0.60±0.03) eV.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Le Polymers; organic compounds (including organic semiconductors)
77.22.Jp Dielectric breakdown and space-charge effects

Effect of Faraday rotation on stimulated Brillouin backscattering

Z. A. Pietrzyk and R. S. Massey

Appl. Phys. Lett. 32, 796 (1978); http://dx.doi.org/10.1063/1.89934 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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The suppression of stimulated Brillouin scattering by Faraday rotation in a laser‐heated solenoid is examined. Theory and experimental results are compared.
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52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Selective absorption of solar energy in granular metals: The role of particle shape

C. G. Granqvist and O. Hunderi

Appl. Phys. Lett. 32, 798 (1978); http://dx.doi.org/10.1063/1.89935 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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Coatings for efficient photothermal conversion of solar energy should have high absorption at wavelengths λ<λc and low absorption at λ≳λc, where λc is ∼2 μm. For granular metals, we show by computation that λc depends strongly on the shape of the metal particles. Increasing eccentricity of ellipsoidal grains is seen to displace λc towards the infrared. A similar shift is found also for spherical metallic shells surrounding dielectric cores of increasing size. Some implications for practical absorber surfaces are pointed out.
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78.66.Bz Metals and metallic alloys
81.40.Tv Optical and dielectric properties related to treatment conditions
84.60.-h Direct energy conversion and storage

Unidirectional contraction in boron‐implanted laser‐annealed silicon

B. C. Larson, C. W. White, and B. R. Appleton

Appl. Phys. Lett. 32, 801 (1978); http://dx.doi.org/10.1063/1.89936 (3 pages) | Cited 47 times

Online Publication Date: 8 August 2008

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The lattice contraction in boron‐implanted laser‐annealed silicon has been studied by x‐ray Bragg reflection profiles and ion channeling. The contraction was shown to be one dimensional, along the surface normal, for strains as large as 1.3%.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
79.20.Ds Laser-beam impact phenomena
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

A high‐sensitivity composite poly‐(methyl methacrylate) resist

C. M. Horwitz

Appl. Phys. Lett. 32, 803 (1978); http://dx.doi.org/10.1063/1.89937 (3 pages)

Online Publication Date: 8 August 2008

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A composite PMMA resist is described with a linear sensitivity of 10−10 C/cm for a 0.8‐μm resist thickness. It uses a simple one‐step development process, gives a pronounced undercut profile suitable for metal lift‐off, and to date has allowed interline spacings of 1.5 μm in 0.4‐μm‐thick resist. Some development and exposure characteristics are described.
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79.20.Kz Other electron-impact emission phenomena
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Integration of an injection laser with a Gunn oscillator on a semi‐insulating GaAs substrate

C. P. Lee, S. Margalit, I. Ury, and A. Yariv

Appl. Phys. Lett. 32, 806 (1978); http://dx.doi.org/10.1063/1.89922 (2 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated.
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42.82.-m Integrated optics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

Low‐resistivity ZnCdS films for use as windows in heterojunction solar cells

N. Romeo, G. Sberveglieri, and L. Tarricone

Appl. Phys. Lett. 32, 807 (1978); http://dx.doi.org/10.1063/1.89923 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Low‐resistivity ZnxCd1−xS films have been obtained by a multisource evaporation method. The films have been doped with In during the deposition. The resistivity of such films varies from 2×10−3 Ω cm for x=0 up to 2 Ω cm for x=0.3 and rises up to 1012 Ω cm for x=1. For energies lower than the energy gap, the transparency of these films, when corrected for the reflection loss, can reach a value of almost 100%. In the range of an x variation between 0 and 0.4 these films, because of their low resistivity and their high transparency, can be used as windows in heterojunction solar cells.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.40.+w Photoconduction and photovoltaic effects
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
84.60.Jt Photoelectric conversion

Tunable high‐efficiency microwave frequency shifting of infrared lasers

Gary M. Carter

Appl. Phys. Lett. 32, 810 (1978); http://dx.doi.org/10.1063/1.89924 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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By using the linear electro‐optic effect in CdTe to mix a 10.6‐μm laser output with a pulsed (1–4‐μsec duration) microwave field produced by a magnetron, the laser’s output was shifted by 16 GHz with ≈ 27% conversion efficiency. By mechanically adjusting the microwave structure containing the CdTe and using a frequency‐swept microwave source, the shift was demonstrated to be tunable from 13.9 to 17.0 GHz.
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42.60.Fc Modulation, tuning, and mode locking
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
78.20.Jq Electro-optical effects
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Photoluminescence recovery in rehydrogenated amorphous silicon

J. I. Pankove

Appl. Phys. Lett. 32, 812 (1978); http://dx.doi.org/10.1063/1.89925 (2 pages) | Cited 23 times

Online Publication Date: 8 August 2008

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The rehydrogenation of thermally dehydrogenated amorphous silicon restores the luminescence characteristics of a‐Si : H.
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78.40.Fy Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions

cw optical wave‐front conjugation by saturated absorption in atomic sodium vapor

P. F. Liao, D. M. Bloom, and N. P. Economou

Appl. Phys. Lett. 32, 813 (1978); http://dx.doi.org/10.1063/1.89926 (3 pages) | Cited 68 times

Online Publication Date: 8 August 2008

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Reconstructed images have been obtained by direct wave‐front conjugation in atomic sodium vapor using a cw tunable dye laser. With a pump power of only 15 mW a conversion efficiency of 0.2% has been observed.
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42.62.-b Laser applications
42.65.-k Nonlinear optics

Direct measurement of gain recovery in a saturated Nd‐glass amplifier

W. E. Martin and D. Milam

Appl. Phys. Lett. 32, 816 (1978); http://dx.doi.org/10.1063/1.89927 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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The temporal dependence of the gain recovery in a Nd‐silicate glass amplifier has been directly observed after the passage of a short intense saturating laser pulse. The gain recovery time constant measured for ED‐2 glass is 1.25±0.2 nsec. A striking polarization dependence of gain saturation recovery is observed.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

A new method for determining thin‐film refractive index and thickness using guided optical waves

John S. Wei and W. D. Westwood

Appl. Phys. Lett. 32, 819 (1978); http://dx.doi.org/10.1063/1.89928 (3 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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We have developed a new method for determining thin‐film refractive index and thickness. In this technique, a sharply converging laser beam is coupled into the film by a prism. Dark mode lines characteristic of the waveguide structure are observed in reflection independently of absorption or scattering loss in the film. A particularly promising application is the rapid sampling of dielectric films in semiconductor technology.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.-m Integrated optics
07.60.Hv Refractometers and reflectometers
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Deep‐level spectroscopy in high‐resistivity materials

Ch. Hurtes, M. Boulou, A. Mitonneau, and D. Bois

Appl. Phys. Lett. 32, 821 (1978); http://dx.doi.org/10.1063/1.89929 (3 pages) | Cited 114 times

Online Publication Date: 8 August 2008

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A simple method to characterize deep levels in high‐resistivity materials is described. Excess carriers are optically injected by pulsed light. The detrapping of these carriers leads to a transient current collected between two contacts. The signal is analyzed as in DLTS, i.e., deep level spectra are recorded during temperature cycles. Some examples of the use of this method are given.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Grain size dependence in a self‐implanted silicon layer on laser irradiation energy density

W. F. Tseng, J. W. Mayer, S. U. Campisano, G. Foti, and E. Rimini

Appl. Phys. Lett. 32, 824 (1978); http://dx.doi.org/10.1063/1.89938 (3 pages) | Cited 27 times

Online Publication Date: 8 August 2008

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The transformation of amorphous Si layers to polycrystalline material induced by Q‐switched ruby laser single pulses of 20 and 50 nsec duration has been investigated. The analysis has been performed by transmission electron microscopy and by channeling measurements using 2.0‐MeV He+ Rutherford backscattering. The average grain size of the polycrystalline layers increases with the incident energy density of the laser pulse in the range 0.6–1.7 J/cm2. A transition to single‐crystal layers is found for incident energy densities around 2.0 J/cm2. The grain size correlates with incident energy density (J/cm2) rather than incident power density (MW/cm2) for these pulse durations.
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64.70.K- Solid-solid transitions
79.20.Ds Laser-beam impact phenomena
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
68.55.-a Thin film structure and morphology

Transient heat transfer to liquid helium and temperature measurement with a response time in the microsecond region

Curt Schmidt

Appl. Phys. Lett. 32, 827 (1978); http://dx.doi.org/10.1063/1.89939 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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A method to measure the heat transfer from a solid surface to liquid helium in the transient mode with a time resolution in the microsecond range is described. A monofilamentary NbTi/Cu compound conductor 52 μm in diameter is used as a heater by applying a current ≳Ic and, via the temperature dependence of Ic, as thermometer with a response time below 10 μsec. Transient heat transfer can be described by a heat‐flow‐independent transfer coefficient h=5 W/cm2 K below a ’’take‐off’’ time t1. At t1 the heat‐transfer coefficient decreases rapidly due to the onset of film boiling. t1 is related to the heat flow Q by the expression t1∝Q−2.
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47.27.T- Turbulent transport processes
44.30.+v Heat flow in porous media
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment

Accurate measurement of small inductances or penetration depths in superconductors

W. H. Henkels

Appl. Phys. Lett. 32, 829 (1978); http://dx.doi.org/10.1063/1.89940 (3 pages) | Cited 28 times

Online Publication Date: 8 August 2008

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A technique for accurately measuring small superconductive inductances is presented. The inductance to be measured is inserted into a two‐junction interferometer into which control current is directly injected. The method was used to measure the penetration depth of a Pb‐In‐Au alloy film and the effect of magnetic field fringing into a narrow superconductive stripline.
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74.25.Ha Magnetic properties including vortex structures and related phenomena
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects
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