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1 Jan 1978

Volume 32, Issue 1, pp. 1-81

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Suppression of oxidation‐stacking‐fault generation by preannealing in N2 atmosphere

Seigô Kishino, Seiichi Isomae, Masao Tamura, and Michiyoshi Maki

Appl. Phys. Lett. 32, 1 (1978); http://dx.doi.org/10.1063/1.89831 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Suppression of oxidation‐stacking‐fault (OSF) generation is studied by x‐ray section topography, etching technique, and transmission electron microscopy (TEM). Microdefects (MD’s) are generated in bulk Si during N2 atmosphere annealing at about 1000–1100 °C, and their generation is confined to the inner part of the Si wafer. These MD’s grow rapidly during subsequent oxidation. The grown MD’s contribute to stacking faults (SF’s) in the inner part of bulk Si. On the contrary, surface OSF’s are not introduced by the subsequent oxidation because no MD’s are generated in the surface layer by the preannealing. The suppression effect of OSF generation by N2 atmosphere preannealing is demonstrated using several samples.
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61.72.Nn Stacking faults and other planar or extended defects
81.65.-b Surface treatments

Line acoustic waves on cleaved edges

Supriyo Datta, Michael J. Hoskins, and Bill J. Hunsinger

Appl. Phys. Lett. 32, 3 (1978); http://dx.doi.org/10.1063/1.89826 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The feasibility of fabricating wedges suitable for wave propagation by cleaving LiNbO3 is demonstrated. This is a simple technique that affords excellent control over the wedge angle. The velocity and field distribution of line waves along the cleaved edge are predicted well from theory.
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43.20.-f General linear acoustics
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Film‐edge‐induced stress in silicon substrates

S. M. Hu

Appl. Phys. Lett. 32, 5 (1978); http://dx.doi.org/10.1063/1.89840 (3 pages) | Cited 52 times

Online Publication Date: 8 August 2008

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Stress fields in silicon substrates, induced by edges of silicon nitride films, were studied by experimentally observing the distribution of indentation‐injected dislocation half‐loops in the vicinity of the film edge. From this distribution, the stress field was obtained by applying the method of analysis recently introduced by the author. The results were compared to the theoretical stress field due to a line force (an approximation) tangential to the boundary of a half‐space, with good agreement.
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68.60.-p Physical properties of thin films, nonelectronic
46.25.-y Static elasticity
61.72.Lk Linear defects: dislocations, disclinations

Space‐charge effects in long coaxial vacuum transmission lines

J. W. Poukey and K. D. Bergeron

Appl. Phys. Lett. 32, 8 (1978); http://dx.doi.org/10.1063/1.89816 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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A new two−dimensional time‐dependent electromagnetic particle code is applied to the high‐voltage pulsed power flow problem in a long self‐magnetically insulated coaxial line. It is found that the current leakage occurs only near the front of the voltage pulse, that energy transport is very efficient at high voltages, and that the electrons in the insulated region do not get close to the anode.
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84.40.Az Waveguides, transmission lines, striplines
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
41.75.Fr Electron and positron beams

CO2 laser irradiation of solid targets in strong magnetic fields

W. Halverson, N. G. Loter, W. W. Ma, R. W. Morrison, and C. V. Karmendy

Appl. Phys. Lett. 32, 10 (1978); http://dx.doi.org/10.1063/1.89827 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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Gain‐switched CO2 laser pulses of 225 J were focused onto planar carbon targets in the presence of longitudinal magnetic fields up to 105 kG. For fields above 25 kG, the mass loss and cross‐sectional area of the cylindrical blow‐off plasma varied as B−6/5. For these cases, only the 60‐nsec gain‐switched laser spike caused target damage; the 1.5‐μsec tail was absorbed by a ∼100‐eV partially confined plasma extending several cm from the target. The field dependence of the plasma cross section is consistent with an adiabatic expansion against the magnetic field.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.40.Hf Plasma-material interactions; boundary layer effects
79.20.Ds Laser-beam impact phenomena

The regrowth of amorphous layers created by high‐dose antimony implantation in 〈100〉 silicon

Y. Tamminga and W. J. M. J. Josquin

Appl. Phys. Lett. 32, 13 (1978); http://dx.doi.org/10.1063/1.89828 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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The epitaxial regrowth of amorphous silicon layers created by a high‐dose antimony implantation in silicon was found to be influenced by the presence of antimony atoms. At concentrations of less than 1020/cm3 the regrowth rate was enhanced in comparison with undoped amorphous silicon layers. For higher antimony concentrations, however, this regrowth was retarded, while for concentrations of about 5×1021/cm3 it was completely inhibited. The concentration limit above which the influence on the regrowth rate is negative appears to be an order of magnitude larger than the maximum solid solubility of the impurity atoms.
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61.80.Jh Ion radiation effects
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Ion‐implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry

A. Lidow, J. F. Gibbons, V. R. Deline, and C. A. Evans

Appl. Phys. Lett. 32, 15 (1978); http://dx.doi.org/10.1063/1.89829 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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Depth profiles of Se‐implanted GaAs samples have been measured using secondary ion mass spectrometry (SIMS). Analyses performed on liquid‐nitrogen and room‐temperature implants into Cr‐doped substrates indicate that Se diffusion during subsequent heat treatment is negligible when the samples are annealed at 1000 °C for 15 min. A 12‐h anneal at 1000 °C does, however, produce a diffused profile but with a diffusion constant of 2.8×10−15 cm2/sec as compared with the value 1×10−13 cm2/sec for thermal diffusion of Se at this temperature.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.Lw Diffusion of other defects
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Interchain ordering in amorphous solid polyethylene

Osamu Yoda, Isamu Kuriyama, and Akira Odajima

Appl. Phys. Lett. 32, 18 (1978); http://dx.doi.org/10.1063/1.89830 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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The degree of interchain packing in solid polyethylene (PE) amorphized by γ irradiation has been analyzed by the x‐ray diffraction method. The differential radial distribution function (DRDF) of amorphous PE has revealed that the short‐range order in interchain packing exists as wide as 20 Å, which depends, however, slightly on the dose of irradiation. Parseval’s relation has proved the adequacy of the DRDF obtained.
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61.41.+e Polymers, elastomers, and plastics
36.20.Fz Constitution (chains and sequences)
61.80.Ed γ-ray effects

Pressure‐induced compensation in n‐type AgInSe2

A. Jayaraman, B. Tell, and R. G. Maines

Appl. Phys. Lett. 32, 21 (1978); http://dx.doi.org/10.1063/1.89832 (2 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The pressure dependence of resisitivity of n‐type AgInSe2 has been investigated up to 40 kbar hydrostatic pressure. The resisitivity shows a slight increase with pressure up to 26 kbar but exhibits a phenomenal time‐dependent rise in the region between 28 and 32 kbar. The sample resisitivity rises by a factor of 2×106 before saturating. We believe that this effect is due to the formation of compensating defect centers in the crystal, prior to the sluggish transformation from the chalcopyrite to the NaCl‐type structure.
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62.50.-p High-pressure effects in solids and liquids
78.40.Fy Semiconductors
72.80.Jc Other crystalline inorganic semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance

Channeling studies of radiation damage in metal‐silicides

Hiroshi Ishiwara, Kohki Hikosaka, and Seijiro Furukawa

Appl. Phys. Lett. 32, 23 (1978); http://dx.doi.org/10.1063/1.89818 (2 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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Channeling effect measurements have been employed to investigate radiation damage produced by 100‐keV Ar ions in preferred oriented polycrystalline metal‐silicide layers, such as Pd2Si and NiSi2 layers formed on single‐crystalline Si. For room‐temperature implantation, an amount of the damage in Pd2Si layers was found to saturate at doses between 3×1014 and 1×1017 ions/cm2, where the minimum aligned yield of 1.5‐MeV He ions was nearly 40% of the random one. On the contrary, it was observed that the NiSi2 layers became amorphous at doses higher than 3×1015 ions/cm2. These results were confirmed by the reflection electron diffraction analyses.
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61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.90.+g Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures (restricted to new topics in section 68)

Spinodal decomposition in amorphous Au‐implanted Pt

S. P. Singhal, H. Herman, and J. K. Hirvonen

Appl. Phys. Lett. 32, 25 (1978); http://dx.doi.org/10.1063/1.89819 (2 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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High‐energy high‐dose Au implantations into Pt have produced an amorphous structure, as observed by transmission electron microscopy. A modulated microstructure has apparently been concurrently formed, and this is concluded to be spinodal decomposition. This result is consistent with independent small‐angle neutron‐scattering experiments.
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61.80.Jh Ion radiation effects
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

High‐power subnanosecond pulses from an injection mode‐locked multiatmosphere CO2 oscillator

P. B. Corkum, A. J. Alcock, D. F. Rollin, and H. D. Morrison

Appl. Phys. Lett. 32, 27 (1978); http://dx.doi.org/10.1063/1.89820 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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A dye laser controlled semiconductor reflection switch has been used to gate subnanosecond pulses of 10.6‐μm radiation from the output of a ∼1‐W cw CO2 laser. Upon injection into a multiatmosphere CO2 oscillator, high‐power mode‐locked pulses having a duration ≲200 ps and a peak single pulse energy ≳10 mJ were obtained. Synchronization of individual mode‐locked dye laser and CO2 pulses has also been demonstrated.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking

Parallel transmission of a one‐dimensional light distribution by a single optical fiber

U. Levy and A. A. Friesem

Appl. Phys. Lett. 32, 29 (1978); http://dx.doi.org/10.1063/1.89821 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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A technique, based on the preservation of the axial angle, for transmitting one‐dimensional light distribution through a single multimode step‐index optical fiber is described. Extension to transmission of two‐dimensional pictures is demonstrated.
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42.81.-i Fiber optics
42.30.-d Imaging and optical processing
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Optical gain at 1.06 μm in the neodymium chloride‐aluminum chloride vapor complex

Ralph R. Jacobs and William F. Krupke

Appl. Phys. Lett. 32, 31 (1978); http://dx.doi.org/10.1063/1.89822 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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First observation of optical gain for trivalent rare‐earth molecular vapors is reported. Specifically, gain coefficients a few tenths percent/cm have been measured in the neodymium chloride—aluminum chloride vapor complex at 1.06 μm for the Nd3+ : 4F3/2→4I11/2 transition. The corresponding stored energy density at this wavelength is ≈35 J/l. The observed inversion lifetime of ≳10 μsec is interpreted to be dominated by near‐resonant excited‐state–excited‐state binary collisions. Use of trivalent rare‐earth molecular vapors as gain media in fusion laser amplifiers is discussed.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
28.52.-s Fusion reactors

The relative Raman cross sections of vitreous SiO2, GeO2, B2O3, and P2O5

F. L. Galeener, J. C. Mikkelsen, R. H. Geils, and W. J. Mosby

Appl. Phys. Lett. 32, 34 (1978); http://dx.doi.org/10.1063/1.89823 (3 pages) | Cited 73 times

Online Publication Date: 8 August 2008

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We report the relative HH Raman spectra obtained from high‐purity bulk samples of the primary glass formers SiO2, GeO2, B2O3, and P2O5. With 514.5‐nm excitation, the peak Raman cross sections of these glasses have relative strengths of 1, 9.2, 4.7, and 5.7, respectively. The superior scattering strength of the latter three glasses suggests that they be used for increasing the gain and tuning range of fiber Raman lasers. The Raman spectra of mixed glasses containing GeO2, P2O5, and Na2O (or K2O) indicate that lasers made of these or similar materials may be continuously tunable over a range of 1300 cm−1.
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78.30.-j Infrared and Raman spectra
42.70.Ce Glasses, quartz
42.55.Rz Doped-insulator lasers and other solid state lasers
42.81.-i Fiber optics

Stimulated emission and optical gain in HgI2

I. M. Catalano, A. Cingolani, M. Ferrara, M. Lugarà, and A. Minafra

Appl. Phys. Lett. 32, 36 (1978); http://dx.doi.org/10.1063/1.89824 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Stimulated emission in HgI2 at 80 °K due to an exciton‐electron collision cooperative process is reported. The line shape of the stimulated emission band depends on the excitation wavelength. High optical gain has been measured. These effects are observed both with one‐ and two‐photon pumping.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.55.Hx Other solid inorganic materials
63.20.K- Phonon interactions

Optical saturation characteristics of CH3OCH3 and CCl3F

R. T. V. Kung and M. Sirchis

Appl. Phys. Lett. 32, 38 (1978); http://dx.doi.org/10.1063/1.89825 (4 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Saturation characteristics of CH3OCH3 and CCl3F were investigated in the intensity range 107 to 5×108 W/cm2 using a nanosecond CO2 laser. The ratio of the low‐intensity absorption cross section to high‐intensity absorption cross section ranges between 3 and 6 for the CO2 10.6‐μm P (22) laser line, indicating substantial saturation at high‐intensity levels. Rotational relaxation rate constants were inferred from the measured transmission as a function of pressure.
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34.50.Ez Rotational and vibrational energy transfer
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Generation of synchronized cw trains of picosecond pulses at two independently tunable wavelengths

R. K. Jain and J. P. Heritage

Appl. Phys. Lett. 32, 41 (1978); http://dx.doi.org/10.1063/1.89833 (4 pages) | Cited 40 times

Online Publication Date: 8 August 2008

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We report the generation of synchronized trains of picosecond pulses at two independently tunable wavelengths from cw mode‐locked dye lasers, synchronously pumped by a mode‐locked argon‐ion laser (pulse width∼100 psec). This has been achieved both by two‐wavelength operation of a single Rhodamine 6G dye laer and by synchronously pumping two independent (Rh‐6G) dye lasers. For both cases, with typical pulse widths of ≈ 5 psec at two independently tunable wavelengths, cross‐correlation measurements indicate good synchronization, with a jitter of less than ∼10 psec between the two pulse trains.
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42.55.Mv Dye lasers
42.50.-p Quantum optics
42.60.-v Laser optical systems: design and operation
06.60.Jn High-speed techniques (microsecond to femtosecond)

Oscillator and superradiant 66 μ emission from a ’’zigzag’’ pumped high‐energy D2O laser

G. Dodel and G. Magyar

Appl. Phys. Lett. 32, 44 (1978); http://dx.doi.org/10.1063/1.89834 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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A zigzag quasilongitudinally (ϑ=15°) CO2 laser‐pumped D2O oscillator at 66 μ is described. Maximum energy was 42 mJ in a 2.5‐μs pulse, representing ∼9% quantum conversion efficiency. The spectrum was only a few axial modes wide. With a single‐pass mirrorless arrangement, a strong superradiant signal was observed, spatially following the CO2 beam at 15° to the axis and easily distinguishable from a weak axial emission.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Silane purification via laser‐induced chemistry

John H. Clark and Robert G. Anderson

Appl. Phys. Lett. 32, 46 (1978); http://dx.doi.org/10.1063/1.89835 (4 pages) | Cited 30 times

Online Publication Date: 8 August 2008

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PH3, AsH3, and B2H6 have been removed from SiH4 by means of selective photolysis with an ArF uv laser. The absolute absorption cross sections for SiH4, PH3, AsH3, and B2H6 have been determined over the region 190–200 nm. Quantum yields for destruction of the contaminant species have been measured at 193 nm. The effects of free‐radical reactions subsequent to photolysis on the selectivity of removal of PH3, AsH3, and B2H6 were found to be minimal. These results suggest that the purification of SiH4 via a laser‐induced chemical process may be of considerable practical importance.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
33.80.Gj Diffuse spectra; predissociation, photodissociation
42.60.-v Laser optical systems: design and operation
85.30.-z Semiconductor devices

A new interimpurity recombination in GaP; revised values for acceptor binding energies

M. D. Sturge, A. T. Vink, and F. P. J. Kuijpers

Appl. Phys. Lett. 32, 49 (1978); http://dx.doi.org/10.1063/1.89836 (3 pages) | Cited 30 times

Online Publication Date: 8 August 2008

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We have observed the radiative recombination of electrons, attached to nitrogen pairs, with holes on neutral acceptors. The acceptor binding energies are found to be 102.5±1 meV for Cd, 70.1±1 meV for Zn, and 54.7±1 meV for C, 8.3 meV larger than previously accepted values. This result implies corresponding increases in the band gap and exciton binding energy, to 2.350±0.002 eV and 22±2 meV, respectively, at 2 K.
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78.40.Fy Semiconductors
78.30.-j Infrared and Raman spectra

High‐average‐power Raman oscillator employing a shared‐resonator configuration

E. O. Ammann

Appl. Phys. Lett. 32, 52 (1978); http://dx.doi.org/10.1063/1.89837 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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The performance of a high‐repetition‐rate (kHz) Raman oscillator is described. The oscillator employs a new configuration in which the Raman medium is located inside the pumping laser, and the Stokes outputs and pumping laser share the same resonator. The Raman oscillator consists of lithium iodate pumped by the 1.08‐μm output of Nd : YAlO3. In separate experiments, we have generated 1.26 W of 1.18‐μm first Stokes average output power and 550 mW of 1.31‐μm second Stokes average power.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Curved junction stabilized filament (CJSF) double‐heterostructure injection laser

Luis Figueroa and Shyh Wang

Appl. Phys. Lett. 32, 55 (1978); http://dx.doi.org/10.1063/1.89838 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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We have fabricated a new type of channel stripe laser with a curved active region which has a spatially stabilized output for measurements up to 2ITh (Pout=75 mW/facet). The CJSF laser has excellent lateral and longitudinal mode selectivity. The laser operates in almost single longitudinal mode when the current exceeds 1.1ITh. Zeroth‐order lateral mode operation is obtained for currents less than 1.5ITh (Pout=30 mW/facet) and linear power output for measurements up to 2ITh. We attribute the favorable characteristics to the curvature of the grown layers which leads to the stabilization of the lateral modes.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
68.55.-a Thin film structure and morphology
42.79.Gn Optical waveguides and couplers

Low‐temperature plasma oxidation of GaAs

N. Yokoyama, T. Mimura, K. Odani, and M. Fukuta

Appl. Phys. Lett. 32, 58 (1978); http://dx.doi.org/10.1063/1.89839 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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A low‐temperature plasma oxidation of GaAs (lower than 100 °C) has been realized. The oxidation apparatus mainly consists of a quartz tube chamber, a low‐power rf oscillator and an electrical magnet. The oxidation rate can be controlled in the range 100–600 Å/min by changing the magnetic field perpendicularly applied to the sample. The interface state density between p‐type GaAs and its oxide film is the order of 1010 cm−2 eV−1 around 0.5 eV from the top of the valence band. This low state density suggests that the oxide film can be applied to various GaAs MOS devices. For the oxide film of n‐type GaAs, an anomalous frequency dispersion in the MOS capacitance is found in the accumulation region. This anomaly is very similar to that observed in anodic oxidation.
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81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

dc plasma anodization of GaAs

L. A. Chesler and G. Y. Robinson

Appl. Phys. Lett. 32, 60 (1978); http://dx.doi.org/10.1063/1.89841 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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Oxide films up to 2500 Å thick have been grown by anodization of GaAs in the negative glow region of a dc oxygen discharge. Using Auger analysis, as‐grown samples were found to contain excess Ga in the bulk of the film and excess As in a wide oxide‐GaAs interface region. Preliminary measurements indicate that plasma anodic films grown on both p‐ and n‐type GaAs exhibit electrical properties similar to films formed by liquid anodization.
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68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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