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1 Jun 1978

Volume 32, Issue 11, pp. 695-783

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The dynamic light scattering in the region of the ferroelectric phase transition in BaTiO3

G. Chanussot and V. M. Fridkin

Appl. Phys. Lett. 32, 695 (1978); http://dx.doi.org/10.1063/1.89909 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The observation of a new effect, the photoinduced Rayleigh light scattering, (the PIRLS) was found in BaTiO3. This scattering has the two following features: it exists simultaneously with a bulk photovoltaic effect in BaTiO3 and it is an example of dynamic (but noncritical) scattering process. The main purpose of this letter is to describe the possible micromechanism responsible for the observed dynamic scattering close to the ferroelectric‐paraelectric phase transition in BaTiO3.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
72.40.+w Photoconduction and photovoltaic effects
74.40.-n Fluctuation phenomena
77.80.Dj Domain structure; hysteresis

Modulation of current in a thin film of lead tin selenide by bulk acoustic waves

S. T. Kowel, P. G. Kornreich, T. Szebenyi, and D. Kaplan

Appl. Phys. Lett. 32, 697 (1978); http://dx.doi.org/10.1063/1.89910 (2 pages)

Online Publication Date: 8 August 2008

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We have measured a 0.1% modulation of electron current in a lead tin selenide film due to a bulk acoustic wave propagated in the barium fluoride substrate. This effect was observed as an ac component of the current at the acoustic frequency 0.6 MHz.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
43.35.Ns Acoustical properties of thin films
72.50.+b Acoustoelectric effects

The design of efficient broadband wedge transducers

J. Fraser, B. T. Khuri‐Yakub, and G. S. Kino

Appl. Phys. Lett. 32, 698 (1978); http://dx.doi.org/10.1063/1.89911 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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A simple coupled‐mode theory has been developed for acoustic‐surface‐wave wedge transducers. Surface‐wave transducers have been fabricated to operate on aluminum using water as the wedge material. The measured efficiency was 68% at 2.75 MHz, the theoretical value being 81%. Transducers have also been fabricated to operate on glass with a rubbery solid, RTV 615, as the wedge material. The experimental and theoretical efficiencies of this transducer at 3.2 MHz were 35 and 50%, respectively. The surface‐wave leakage coefficient of RTV 615 on glass has been measured and found to be in excellent agreement with theory.
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43.38.+n Transduction; acoustical devices for the generation and reproduction of sound
43.35.Pt Surface waves in solids and liquids

The effect of the cyclotron resonance on the sensitivity of a glow discharge to millimeter‐wave radiation

R. Opher, J. Politch, and J. Felsteiner

Appl. Phys. Lett. 32, 701 (1978); http://dx.doi.org/10.1063/1.89894 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The sensitivity of a miniature glow discharge tube to electromagnetic millimeter‐wave radiation (70 GHz) was investigated in magnetic fields near the cyclotron resonance. A 100‐fold increase in the signal‐to‐noise ratio (SNR) was obtained at the cyclotron resonance. The SNR of the tube at cyclotron resonance was greater than ten times that of a commonly used crystal detector for millimeter‐wave radiation (1N53D) measured under similar conditions.
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52.75.-d Plasma devices
52.80.Hc Glow; corona
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Polarization‐dependent energy transport in laser‐produced plasmas

J. S. Pearlman and J. J. Thomson

Appl. Phys. Lett. 32, 703 (1978); http://dx.doi.org/10.1063/1.89912 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The polarization dependence of the ion expansion from the front and rear of laser‐irradiated thin‐film targets is measured. The thermal ion component shows an increased asymmetry with incident p polarization compared with s‐polarized radiation. This is attributed to reduced thermal conductivity. Various possible mechanisms for this effect are discussed.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Fi Transport properties

Stability criteria in metal vapor discharges

B. N. Srivastava, J. H. Jacob, J. A. Mangano, and M. Rokni

Appl. Phys. Lett. 32, 705 (1978); http://dx.doi.org/10.1063/1.89913 (4 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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In this letter we discuss the stability criteria in recombination‐ and attachment‐dominated metal vapor laser discharges. The mercury halide laser discharges are typical of attachment‐dominated discharges, while the metal vapor exciplex lasers, like CdHg∗, are typical of recombination‐dominated discharges. In high‐power electronic transition laser discharges, a relatively large excited‐state population exists which dominates the stability of these discharges. This occurs because the excited states have a smaller ionization potential and larger ionization cross section than the ground state. As a result, multistep ionization is the dominant ionization. When three‐step ionization is dominant and electron mixing of the excited states is unimportant, attachment‐dominated discharges will be stable if the attachment rate β⩾mνi0, where 2<m⩾3 and νi0, is the equilibrium ionization rate. For a recombination‐dominated discharge the criterion in this limit is ane0⩾mνi0 where 1.0<m⩾1.5 and a is the recombination coefficient and ne0 is the equilibrium electron density.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.-s Electric discharges

High‐efficiency secondary electron emission produced by ions incident on a porous MgO‐Ag layer

Nobuyoshi Koshida and Shigetomo Yoshida

Appl. Phys. Lett. 32, 708 (1978); http://dx.doi.org/10.1063/1.89914 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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High‐efficiency secondary electron emission due to incident ions was obtained from a porous MgO‐Ag layer prepared from a suspension of MgO, MgCO3 powder, and Ag paste. Field‐dependent secondary emission yield larger than unity was achieved under relatively low‐energy ion bombardment. The introduction of Ag produces a uniform surface potential and therefore results in a stable secondary emission current. This type of emitter is potentially useful for application in gas‐discharge devices.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
79.20.Hx Electron impact: secondary emission
73.61.Ng Insulators

Photoelectron emission from small particles suspended in air

A. Schmidt−Ott and H. C. Siegmann

Appl. Phys. Lett. 32, 710 (1978); http://dx.doi.org/10.1063/1.89915 (4 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Electrical conductivity caused by photoelectron emission from ultrafine particles suspended in a gas has been observed; one obtains information on the concentration as well as on the size of the particles. Furthermore, some bulk and surface properties of small particles not in contact with any substrate can be investigated at any temperature via the photoelectric threshold and the yield of photoelectrons. The method is extremely sensitive, i.e., measurements can be made at a very low particle concentration (∼103 cm−3) and small particle radii (<50 Å).
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79.60.-i Photoemission and photoelectron spectra
93.85.-q Instruments and techniques for geophysical research: Exploration geophysics
92.60.-e Properties and dynamics of the atmosphere; meteorology
82.70.Rr Aerosols and foams

Photocapacitive MIS infrared detectors

A. Sher, R. K. Crouch, S. S.‐M. Lu, W. E. Miller, and John A. Moriarty

Appl. Phys. Lett. 32, 713 (1978); http://dx.doi.org/10.1063/1.89895 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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A new class of room‐temperature infrared detectors, which exploits the photocapacitive effect in MIS and MISIM devices, is reported. An (unoptimized) peak detectivity of ∼3×1012 W−1 cm Hz1/2 has been measured in a prototype Si device.
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72.40.+w Photoconduction and photovoltaic effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Argon bubble formation in the sputtering of PtSi

Z. L. Liau and T. T. Sheng

Appl. Phys. Lett. 32, 716 (1978); http://dx.doi.org/10.1063/1.89896 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Argon bubble formation has been observed by Rutherford backscattering spectrometry and cross‐sectional transmission electron microscopy in PtSi sputtered by Ar ions of 20–160 keV. The backscattering data show the bubble formation process to be repetitive. This phenomenon is interpreted in terms of Ar release due to the sputter etching.
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61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
64.75.-g Phase equilibria

Determination of boron and phosphorus concentration in silicon by photoluminescence analysis

Michio Tajima

Appl. Phys. Lett. 32, 719 (1978); http://dx.doi.org/10.1063/1.89897 (3 pages) | Cited 85 times

Online Publication Date: 8 August 2008

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A novel method to obtain boron and phosphorus concentration in silicon crystals by photoluminescent (PL) analysis at liquid‐helium temperature is reported. The intensity ratio between intrinsic and extrinsic components in the PL spectra reflects the impurity concentration. The tentative calibration curves for boron and phosphorus for our method are obtained by comparison with the results of the resistivity measurement. The detection limit of this method is estimated to be as low as 1×1011 cm−3 for boron and 5×1011 cm−3 for phosphorus. The degree of compensation can be estimated also. The PL method makes it possible to determine nondestructively the concentration of small amount of impurities in a small region of a specimen.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.40.Fy Semiconductors

Improvement in energy extraction by a multiline/double‐band CO2 laser

Y. Kawamura, H. Takeda, H. Fujita, M. Matoba, S. Nakai, and C. Yamanaka

Appl. Phys. Lett. 32, 722 (1978); http://dx.doi.org/10.1063/1.89898 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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For short‐pulse energy extraction from a CO2 laser amplifier it is desirable to use multiline/double‐band amplification. Multiline/double‐band oscillation including up to nine lines was obtained simultaneously from the 9.6‐ and 10.6‐μm bands by placing an etalon perpendicular to the optical axis of a CO2 laser and adjusting its thickness in the oscillator cavity. Improvement in energy extraction was corroborated in the region of saturation amplification using a 1‐atm electron‐beam‐controlled amplifier.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A new dielectric facet reflector for semiconductor lasers

Michael Ettenberg

Appl. Phys. Lett. 32, 724 (1978); http://dx.doi.org/10.1063/1.89899 (2 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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Described in this letter is a new dielectric reflector designed for injection laser facets which consists of alternating quarter‐wavelength layers of Al2O3 and Si. The reflectivity for six layers can be made ≳0.98 over a wavelength range from ∼0.7 to ≳2 μm. By choosing the appropriate number of quarter‐wavelength layers and the final layer thickness the reflectivity can be varied between 0.01 and 0.98. Finally, both Si and Al2O3 are impervious to the chemical cleaning and wetting agents and solders used during the mounting of (AlGa)As cw injection lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Wc Optical coatings
77.55.-g Dielectric thin films
42.60.By Design of specific laser systems

Sealed multiatmosphere CO2 TEA laser: Seed‐gas compatible system using unheated oxide catalyst

R. B. Gibson, A. Javan, and K. Boyer

Appl. Phys. Lett. 32, 726 (1978); http://dx.doi.org/10.1063/1.89900 (2 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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A sealed multiatmospheric CO2 TEA laser is reported in which recombination of principle discharge products CO and O2 is induced by recirculating the laser gas mixture through a room‐temperature oxide catalyst bed. No special gas mixtures are required and the catalyst is compatible with at least some trialkylamine seed gases.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Pulse‐width dependence on intracavity bandwidth in synchronously mode‐locked cw dye lasers

C. P. Ausschnitt and R. K. Jain

Appl. Phys. Lett. 32, 727 (1978); http://dx.doi.org/10.1063/1.89901 (4 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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We present a model of the synchronously mode‐locked cw dye laser which predicts a square root dependence of dye pulse width on pump pulse width and intracavity bandwidth (ωc). Experiments performed on the Rhodamine 6G laser confirm the ω−1/2c dependence. For a pump pulse width of 100 ps, subpicosecond dye pulses are obtained for intracavity bandwidths greater than 150 Å, and the minimum pulse width is shown to be limited by the bandwidth of the dye to ∼0.5 ps.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Instability onset in electron‐beam‐sustained KrF∗ laser discharges

Robert T. Brown and William L. Nighan

Appl. Phys. Lett. 32, 730 (1978); http://dx.doi.org/10.1063/1.89902 (4 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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Measurements of instability onset in a spatially uniform electron‐beam‐sustained KrF∗ laser discharge have shown that the time at which instability occurs decreases from about 1 to 0.1 μsec as E/n is increased in the range required for efficient laser operation. This finding is in good agreement with computed ionization instability onset times determined on the basis of a comprehensive model of the discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.80.-s Electric discharges

New quenching rates applicable to the KrF laser

J. G. Eden, R. W. Waynant, S. K. Searles, and R. Burnham

Appl. Phys. Lett. 32, 733 (1978); http://dx.doi.org/10.1063/1.89903 (3 pages) | Cited 27 times

Online Publication Date: 8 August 2008

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Photolysis of KrF2 has been used to measure the rates of collisional quenching of KrF(B) excimers in two‐ and three‐body collisions with Ar, Kr, and F2. In addition, the KrF(B→X) band radiative lifetime was determined to be 6.8±0.2 ns. The results are in good agreement with existing theory and demonstrate the importance of quenching to KrF laser performance.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.-s Scattering of atoms and molecules
31.50.Df Potential energy surfaces for excited electronic states
82.50.Hp Processes caused by visible and UV light

The role of buffer gases in optoacoustic spectroscopy

Launey J. Thomas III, Michael J. Kelly, and Nabil M. Amer

Appl. Phys. Lett. 32, 736 (1978); http://dx.doi.org/10.1063/1.89904 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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The dependence of an acoustically resonant optoacoustic signal on the molecular weight and thermodynamic and transport properpties of the buffer gas is reported. Our results show that careful selection of such gases can significantly increase the sensitivity and flexibility of optoacoustic spectroscopy. We also demonstrate that such thermodynamic quantities as γ (≡Cp/Cv) and sound velocity can now be measured readily and accurately. Other potential applications are suggested.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
51.30.+i Thermodynamic properties, equations of state
34.90.+q Other topics in atomic and molecular collision processes and interactions (restricted to new topics in section 34)
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques

Long‐pulse N2 uv laser from a N2‐CF4 mixture

F. Collier, G. Thiell, and P. Cottin

Appl. Phys. Lett. 32, 739 (1978); http://dx.doi.org/10.1063/1.89905 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Using a long‐duration transverse discharge (300 ns) preionized by a short‐pulse electron‐beam gun (10 ns), laser emission has been obtained in the second positive system of nitrogen at λ=3371 Å in nitrogen alone and at λ=3577 Å in a N2‐CF4 mixture. In the latter mixture, the laser emission lasts for 70 ns which is much longer than the radiative lifetime of the upper laser level C 3Πu(τF=40 ns). We think that the blottleneck of the terminal laser level is avoided thanks to the vibrational deactivation of the nitrogen B 3Πg state due to the irreversible transfer of vibrational energy of N2 to CF4 during collisions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Ez Rotational and vibrational energy transfer

EPR characterization of optical‐quality AgGaS2 grown from the melt

H. J. von Bardeleben, A. Goltzené, C. Schwab, and R. S. Feigelson

Appl. Phys. Lett. 32, 741 (1978); http://dx.doi.org/10.1063/1.89906 (4 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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The EPR study of optical‐quality AgGaS2 has proven the existence of the point defects Ni3+, Fen+, (n⩽2), a shallow donor (ED<0.11 eV), and one associated defect Fe3+‐X, the charge states of which are all photosensitive. The effectiveness of the standard annealing procedures, employed to obtain crystals of low absorption in the 0.5–12‐μm range, is associated with an oxidation of these transition‐metal impurities.
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42.70.-a Optical materials
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
81.10.Fq Growth from melts; zone melting and refining
78.40.Fy Semiconductors

Charge storage and photoconductivity of PbO powder layers

J. E. Ralph and M. J. Plummer

Appl. Phys. Lett. 32, 744 (1978); http://dx.doi.org/10.1063/1.89907 (3 pages)

Online Publication Date: 8 August 2008

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Photoconducting red lead monoxide powder layers treated with a rhodamine B dye and deposited on interdigital electrodes are shown to have novel properties. The equilibrium dark current measured at 10 V may be reduced by applying a voltage pulse. Typically 200‐V pulses of 30 ms duration give a reduction of about 102 times. The recovery from this nonequilibrium condition in the dark and under 600‐ nm illumination at intensities between 5×10−9 and 5×10−7 W/cm2 is described. This behavior is discussed in terms of the depletion of grain‐grain contacts by the surrounding charge stored in surface states associated with the adsorbed dye molecules.
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72.40.+w Photoconduction and photovoltaic effects
73.20.-r Electron states at surfaces and interfaces
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors

Gettering of surface and bulk impurities in Czochralski silicon wafers

G. A. Rozgonyi and C. W. Pearce

Appl. Phys. Lett. 32, 747 (1978); http://dx.doi.org/10.1063/1.89908 (3 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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The ability of SiO2 precipitates to act as a source of process‐induced defects which can either beneficially getter unwanted impurities, or deleteriously interact with surface devices, has led to some confusion in interpreting the role of wafer oxygen content in device processing. This report presents a composite model which explains the many variables involved in oxygen precipitation and gettering phenomena.
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61.72.Yx Interaction between different crystal defects; gettering effect
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Sidewall penetration of dislocations in ion‐implanted bipolar transistors

T. Koji, W. F. Tseng, and J. W. Mayer

Appl. Phys. Lett. 32, 749 (1978); http://dx.doi.org/10.1063/1.89916 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Phosphorus‐doped emitters have been formed by either conventional diffusion or implantation, anneal, and drive‐in processes. Transmission electron microscopy and measurements of transistor characteristics were made to evaluate the two processes. Comparison of structures with similar dislocation densities indicated that the dislocations in the implanted structures penetrated the emitter‐base sidewall, whereas the dislocations in the diffused structure were confined to the emitter region. The transistor with extended dislocations exhibited high leakage current and excess popcorn noise generating.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.80.Jh Ion radiation effects
85.30.Pq Bipolar transistors

Surface composition and fabrication of an oxide‐free Ga1−xAlxAs Schottky barrier

Bansang W. Lee, Peter Mark, and Jwu‐Lin Yeh

Appl. Phys. Lett. 32, 751 (1978); http://dx.doi.org/10.1063/1.89917 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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A native oxide layer of ∼30 Å is found on the Ga1−xAlxAs surface. Ion‐sputtering and ultrahigh vacuum (UHV) technologies are developed to fabricate an oxide‐free Schottky barrier from the (100) face of the compound semiconductor.
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73.30.+y Surface double layers, Schottky barriers, and work functions

On an experimental and theoretical determination of tunnel current which sets off the avalanche in high‐efficiency IMPATT diodes

P. Kennis, M. Chive, and E. Constant

Appl. Phys. Lett. 32, 753 (1978); http://dx.doi.org/10.1063/1.89918 (3 pages)

Online Publication Date: 8 August 2008

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In Schottky‐barrier (Pt–n GaAs) Read‐type IMPATT diodes (Hi‐Lo or Lo‐Hi‐Lo) it is now well known that the thermionic field‐effect carrier injection (TFE) can decrease the diode microwave performances but also improve the noise properties under large signal levels. We present an experimental study to determine the TFE current which sets off the avalanche for voltage operation corresponding to oscillation or amplification conditions by measuring the back‐bias effect in a pulse operation mode. Then using the tunnel current which has been checked by the present method, the variation of the optimum frequency operation for a high‐low doping profile diode is calculated.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
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