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15 Jan 1978

Volume 32, Issue 2, pp. 83-123


Analysis of propagation characteristic of Bleustein‐Gulyaev waves at surface imperfections

Zen’ichro Kawasaki and Kazuo Tanaka

Appl. Phys. Lett. 32, 83 (1978); http://dx.doi.org/10.1063/1.89944 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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This paper describes a theoretical study of the diffraction of Bleustein‐Gulyaev waves at surface imperfections. With the use of the integral representations of the shear‐horizontal waves in a semi‐infinite piezoelectric material, simultaneous integral equations are obtained. Moment methods are applied in order to solve these equations. To obtain a qualitative idea of the propagation characteristic of Bleustein‐Gulyaev waves at surface imperfections, numerical illustrations of the power transmission coefficient, power reflection coefficient, and the scattering power coefficient are shown.
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72.50.+b Acoustoelectric effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

An acousto‐optic real‐time ’’two‐crystal’’ correlator

N. J. Berg, B. J. Udelson, J. N. Lee, and E. Katzen

Appl. Phys. Lett. 32, 85 (1978); http://dx.doi.org/10.1063/1.89945 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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A real‐time correlator has been developed that utilizes successive acousto‐optic interactions in two adjacent piezoelectric crystals (lithium niobate, LiNbO3, and bismuth germanium oxide, BGO) having surface‐acoustic‐wave (SAW) propagation velocities that differ by almost a factor of 2. Complex waveforms, such as FM chirps and Barker codes, have been correlated successfully. A large time‐bandwidth product (∼3000) was obtained, and a 40‐dB dynamic range was shown to be feasible. The use of this two‐crystal device to obtain either pulse expansion or time inversion of a signal also was demonstrated.
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78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.20.Jq Electro-optical effects
43.60.-c Acoustic signal processing

Coherent radiation from an intense relativistic electron beam rotating in a background plasma

V. Granatstein, C. Roberson, G. Benford, D. Tzach, and S. Robertson

Appl. Phys. Lett. 32, 88 (1978); http://dx.doi.org/10.1063/1.89946 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Radiation at λ∼1 cm and megawatt power level is observed when a rotating, relativistic electron beam interacts with a background plasma. The emission spectrum is peaked at the 20th cyclotron harmonic, and the parametric dependence of the radiation is consistent with a model of interaction between single‐particle cyclotron radiation and a beam‐plasma streaming instability.
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52.40.Mj Particle beam interactions in plasmas
52.27.Ny Relativistic plasmas
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)

Surface electromagnetic wave launching at the edge of a metal film

Y. J. Chabal and A. J. Sievers

Appl. Phys. Lett. 32, 90 (1978); http://dx.doi.org/10.1063/1.89947 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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Propagating ir surface electromagnetic waves have been launched on and off the edges of a metallic film evaporated on the base of an NaCl prism. The coupler does not make use of an air gap or a grating.
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68.35.Ja Surface and interface dynamics and vibrations
78.66.Bz Metals and metallic alloys
42.25.Gy Edge and boundary effects; reflection and refraction
42.79.Gn Optical waveguides and couplers

Significance of the channeling surface peak in thin‐film analysis

Robert L. Kauffman, L. C. Feldman, P. J. Silverman, and R. A. Zuhr

Appl. Phys. Lett. 32, 93 (1978); http://dx.doi.org/10.1063/1.89948 (2 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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The surface scattering of MeV He+ ions channeled along Si〈100〉 from clean well‐characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.60.-p Physical properties of thin films, nonelectronic

Effect of ionizing radiation on the optical attenuation in polymer‐clad silica fiber‐optic waveguides

E. J. Friebele, R. E. Jaeger, G. H. Sigel, and M. E. Gingerich

Appl. Phys. Lett. 32, 95 (1978); http://dx.doi.org/10.1063/1.89949 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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The optical attenuation induced in polymer‐clad silica fiber‐optic waveguides by low‐dose ionizing radiation (0.5–14 MeV) has been found to be much greater than expected on the basis of previous high‐dose measurements. The radiation sensitivity is dependent upon the purity and OH content of the silica and upon the radiation history of the fibers, but it does not appear to depend upon the drawing conditions nor on the limited radiation‐induced loss in the polymer cladding. The damage is greater at short times following the irradiation, and the decay kinetics of different synthetic silica fibers are qualitatively the same.
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42.79.Gn Optical waveguides and couplers
61.80.-x Physical radiation effects, radiation damage
42.81.-i Fiber optics
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Measurements of the absorption edge in fused silica

I. P. Kaminow, B. G. Bagley, and C. G. Olson

Appl. Phys. Lett. 32, 98 (1978); http://dx.doi.org/10.1063/1.89950 (2 pages) | Cited 22 times

Online Publication Date: 8 August 2008

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The absorption coefficients of four commercial silicas (Spectrosil WF, Spectrosil A, Suprasil W2, Suprasil 2) have been measured over the energy range 6.2–8.1 eV. The absorption in the neighborhood of the edge varies markedly with water content. A peak or a shoulder is observed at 7.6 eV (an energy below the absorption edge) in the water‐free samples. In samples containing significant OH, no structure at energies lower than the fundamental edge is observed. The absorption edge for the dry silica occurs at an energy 0.2 eV higher than for the wet silica.
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78.40.Ha Other nonmetallic inorganics
78.30.Hv Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Internal cw parametric upconversion

Joel Falk and Y. C. See

Appl. Phys. Lett. 32, 100 (1978); http://dx.doi.org/10.1063/1.89951 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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The first demonstration of cw parametric upconversion inside a laser’s optical cavity is reported. Infrared radiation λ=3.39 μm was upconverted using a 5145‐Å argon laser pump and a lithium niobate crystal.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.60.By Design of specific laser systems

Subpicosecond pulses from a tunable cw mode‐locked dye laser

J. P. Heritage and R. K. Jain

Appl. Phys. Lett. 32, 101 (1978); http://dx.doi.org/10.1063/1.89952 (3 pages) | Cited 33 times

Online Publication Date: 8 August 2008

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Tunable subpicosecond pulses (pulse width =0.8 psec) have been obtained from a cw mode‐locked Rhodamine B dye laser. Mode locking is achieved by synchronous pumping of the Rh‐B dye with a cw train of pulses which are obtained from a synchronously mode‐locked Rhodamine 6G dye laser.
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42.55.Mv Dye lasers

Optical surface waves in periodic layered media

Pochi Yeh, Amnon Yariv, and A. Y. Cho

Appl. Phys. Lett. 32, 104 (1978); http://dx.doi.org/10.1063/1.89953 (2 pages) | Cited 112 times

Online Publication Date: 8 August 2008

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A generalized analysis of wave propagation in periodic layered media is applied to the special case of optical surface waves. These waves, confined to the interface between a periodic layered medium and a homogeneous medium, are formally analogous to electronic surface states in crystals. Single‐mode surface‐wave propagation along the surface of a GaAs‐AlGaAs multilayer stack (grown by molecular‐beam epitaxy) has been observed experimentally.
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42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology
84.40.Ba Antennas: theory, components and accessories

Theoretical analysis of the electrically excited KrF laser

W. B. Lacina and D. B. Cohn

Appl. Phys. Lett. 32, 106 (1978); http://dx.doi.org/10.1063/1.89954 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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The results obtained from a comprehensive theoretical model for an electrically excited laser are compared with experimental data obtained from a large‐volume KrF laser device, excited by an e−‐beam only, or with enhancement from an electric discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Formation and quenching processes in e–beam‐pumped Kr/F2 mixtures

J. H. Jacob, M. Rokni, J. A. Mangano, and R. Brochu

Appl. Phys. Lett. 32, 109 (1978); http://dx.doi.org/10.1063/1.89955 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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In this letter we report on measurements of the ion‐ion recombination rate constant for the reaction Kr++F− +(M) →KrF∗+(M) at pressures below 300 Torr. The rate constant is determined from the shape of the KrF∗ B 2Σ→X 2Σ fluorescence. The two‐body quenching of KrF∗ by F2 has also been measured and the rate constant was found to be 7.8×10−10 cm3/sec. The two‐body quenching of KrF∗ by Kr is negligible, while the three‐body quenching by 2Kr was measured to be 6.7×10−31 cm6/sec. In evaluating the rate constants quoted above we have used the Dunning and Hay radiative lifetime for KrF∗ of 6.5 nsec.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Surface relief structures with linewidths below 2000 Å

D. C. Flanders, Henry I. Smith, H. W. Lehmann, R. Widmer, and D. C. Shaver

Appl. Phys. Lett. 32, 112 (1978); http://dx.doi.org/10.1063/1.89956 (3 pages) | Cited 27 times

Online Publication Date: 8 August 2008

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We describe techniques for producing high‐aspect‐ratio vertical‐walled relief gratings of 1600 Å linewidth with smooth line edges in SiO2 and Si substrates. Soft x‐ray lithography (13.3–44.7 Å) is first used to expose such structures in PMMA. Liftoff of chromium and reactive sputter etching in CHF3 gas are then used to transfer the structure into the SiO2.
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68.55.-a Thin film structure and morphology
85.40.Bh Computer-aided design of microcircuits; layout and modeling
42.82.-m Integrated optics
42.79.Dj Gratings

Hyperfine structure in the electronic spectrum of 127I2 by saturated absorption spectroscopy at 633 nm

A. Morinaga and K. Tanaka

Appl. Phys. Lett. 32, 114 (1978); http://dx.doi.org/10.1063/1.89957 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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The full hyperfine components of the R (127) line in the 11‐5 band and the 10 components of the P (33) line in the 6‐3 band of the B←X electronic transition of 127I2 were observed by the saturated absorption spectroscopy using a complex resonator He‐Ne laser. The frequency of the laser was locked to each component and the frequency separations of the components were precisely measured. The hyperfine structure of the R (127) line was compared with a model which included both a nuclear electric quadrupole and magnetic hyperfine interactions.
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33.15.Pw Fine and hyperfine structure
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.72.-g Optical sources and standards
31.30.Gs Hyperfine interactions and isotope effects

Oxygen effects on arsenic diffusion in silicon dioxide

Katsuhiro Tsukamoto, Yoichi Akasaka, and Kazuo Horie

Appl. Phys. Lett. 32, 117 (1978); http://dx.doi.org/10.1063/1.89941 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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The diffusion mechanism of arsenic implanted into silicon dioxide is studied by the MeV He+ backscattering method. The diffusion coefficient of elemental arsenic in silicon dioxide is extremely small, i.e., smaller than 1×10−17 cm2/sec at 1200°C. The arsenic diffusivity in silicon dioxide is enhanced by introducing extra oxygen into silicon dioxide from an oxidizing atmosphere or by additional oxygen implantation. Arsenic interacts with the extra oxygen, and an arsenic‐oxygen compound might be formed which has a much larger diffusivity than elemental arsenic.
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66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.Yx Interaction between different crystal defects; gettering effect

Degradation of (AlGa)As DH lasers due to facet oxidation

T. Yuasa, M. Ogawa, K. Endo, and H. Yonezu

Appl. Phys. Lett. 32, 119 (1978); http://dx.doi.org/10.1063/1.89942 (3 pages) | Cited 52 times

Online Publication Date: 8 August 2008

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The facet deterioration of (AlGa)As DH lasers by aging was analyzed by Auger electron spectroscopy in combination with Ar sputter etching. It was found that oxide was formed on the laser facet during cw operation, and the oxidation degraded lasers not only in long‐term operation but also even at an early stage of operation.
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42.55.Px Semiconductor lasers; laser diodes
81.65.-b Surface treatments

High‐field measurements of anisotropy of Hc2 and effect on grain‐boundary flux pinning in V3Si

S. Foner and E. J. McNiff

Appl. Phys. Lett. 32, 122 (1978); http://dx.doi.org/10.1063/1.89943 (2 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Measurements of the anisotropy δ (T) = (Hc2[100]−Hc2[110])/Hc2 of single‐crystal V3Si are presented which show that δ (T) is small and essentially temperature independent for a variety of crystals with residual resistance ratios from 17 to 60. The effects of δ on flux pinning in V3Si is much smaller than estimated earlier.
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74.25.-q Properties of superconductors
74.70.-b Superconducting materials other than cuprates
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