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1 Feb 1978

Volume 32, Issue 3, pp. 125-194

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Getter sputtering at low temperature (≃20 °K)

J. J. Hauser

Appl. Phys. Lett. 32, 125 (1978); http://dx.doi.org/10.1063/1.89969 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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Getter sputtering with substrate temperatures as low as 18 °K was achieved by sputtering in helium gas with liquid helium circulating through the substrate table. This technique is effective in producing amorphous films from usually crystalline materials as a result of the low deposition temperature and of the high helium gas pressure necessary to obtain a sputtering current.
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81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures

Polarization interferometry in acousto‐optics

A. Alippi, A. Palma, L. Palmieri, G. Socino, and E. Verona

Appl. Phys. Lett. 32, 127 (1978); http://dx.doi.org/10.1063/1.89970 (3 pages)

Online Publication Date: 8 August 2008

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A simple polarization interferometry technique is introduced in acousto‐optics, which allows a polarization discrimination of the light scattered by acoustic waves, when no strain‐induced birefringence is produced by the acoustic perturbation. Results are presented, which are obtained through the use of a Savart plate in detecting light scattered by acoustic surface waves.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
07.60.Ly Interferometers
07.60.Fs Polarimeters and ellipsometers
42.79.Ci Filters, zone plates, and polarizers

Variable frequency SAW resonators on ferroelectric‐ferroelastics

L. A. Coldren and R. A. Lemons

Appl. Phys. Lett. 32, 129 (1978); http://dx.doi.org/10.1063/1.89971 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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High‐Q SAW grating resonators with tunabilities approaching 1% are possible on certain ferroelectric‐ferroelastic crystals such as Gd2(MoO4)3. The resonant frequency is tuned by electronically varying the width of a small domain with different acoustic velocity within the resonator cavity. Experimental results at ∼92.6 MHz are presented.
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84.30.Vn Filters
43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Electron‐electron effects in the writing and erasing of dual‐dielectric charge‐storage cells

K. K. Thornber and D. Kahng

Appl. Phys. Lett. 32, 131 (1978); http://dx.doi.org/10.1063/1.89972 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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We have found an abrupt drop in the capture efficiency of dopant‐induced interfacial states in DDC’s when the stored‐charge density exceeds 7×1012/cm2. The constancy of this number with electric field strength and with increasing capture efficiency from increased induced‐state density suggests Coulombic repulsion ultimately limits writing efficiency. Erasing characteristics are also explained by barrier lowering due to electron‐electron repulsion.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Ht High-field and nonlinear effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Formation of strong E‐layers by intense electron‐beam injection into preformed plasmas

A. C. Smith, H. H. Fleischmann, and W. C. Condit

Appl. Phys. Lett. 32, 133 (1978); http://dx.doi.org/10.1063/1.89973 (4 pages)

Online Publication Date: 8 August 2008

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Intense electron‐beam injection into preformed plasmas in the RECE‐Berta and CHIP devices at Cornell led to the formation of electron layers with 25 and 80% field‐reversal strength, and lifetimes of 400 and 150 μsec, respectively. A pronounced ’’stalling’’ of the beam in the vicinity of the injector is observed in RECE‐Berta.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.75.-d Plasma devices
52.40.Mj Particle beam interactions in plasmas

A new method for determining the pyroelectric coefficient of thin polymer films using dielectric heating

H. Sussner, D. E. Horne, and D. Y. Yoon

Appl. Phys. Lett. 32, 137 (1978); http://dx.doi.org/10.1063/1.89974 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Using polarized poly(vinylidene fluoride) films we have demonstrated a new method for determining the pyroelectric coefficient of thin polymer films. In contrast to previous techniques, we utilize the dielectric absorption of the sample itself by applying a radio‐frequency pulse to generate heat uniformly throughout the film. The pyroelectric coefficient is obtained without any further calibration by measuring simultaneously the generated charge. Since a spatially uniform temperature increase is achieved in the order of milliseconds, the values obtained represent a true average of the bulk polarization regardless of its spatial distribution.
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77.70.+a Pyroelectric and electrocaloric effects
77.55.-g Dielectric thin films
77.22.Gm Dielectric loss and relaxation

Laser annealing of boron‐implanted silicon

R. T. Young, C. W. White, G. J. Clark, J. Narayan, W. H. Christie, M. Murakami, P. W. King, and S. D. Kramer

Appl. Phys. Lett. 32, 139 (1978); http://dx.doi.org/10.1063/1.89959 (3 pages) | Cited 144 times

Online Publication Date: 8 August 2008

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The properties of boron‐implanted silicon annealed by high‐power Q‐switched ruby laser radiation are compared with results obtained by conventional thermal annealing. Laser annealing of the implanted layer results in significantly increased electrical activity, as compared to thermally annealed implanted silicon. This correlates well with transmission electron microscopy and ion‐channeling measurements which show a dramatic removal of displacement damage as a result of laser annealing. A substantial redistribution of the implanted boron concentration profile occurs after laser annealing which cannot be explained by thermal diffusion in the solid.
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61.80.Jh Ion radiation effects
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors

A. Gat and J. F. Gibbons

Appl. Phys. Lett. 32, 142 (1978); http://dx.doi.org/10.1063/1.89960 (3 pages) | Cited 63 times

Online Publication Date: 8 August 2008

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The feasibility of annealing ion‐implantation damage by means of a continuous high‐power laser is demonstrated. An apparatus for the scanning of a semiconductor sample is described and a first‐order set of optimum conditions for annealing ion‐implanted Si is given. A preliminary comparison between laser and thermal annealing shows comparable results in terms of electrical activity of the annealed samples.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation

Anomalous migration of fluorine and electrical activation of boron in BF+2‐implanted silicon

M. Y. Tsai, B. G. Streetman, P. Williams, and C. A. Evans

Appl. Phys. Lett. 32, 144 (1978); http://dx.doi.org/10.1063/1.89961 (4 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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Fluorine distribution profiles for silicon implanted with 150‐keV 1×1015‐cm−2 BF+2 at room temperature or at −110 °C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity‐gettering effects. Electrical carrier distribution profiles of room‐temperature BF+2‐implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550 °C annealing. However, a damaged region near the crystalline‐amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Annealing of Te‐implanted GaAs by ruby laser irradiation

J. A. Golovchenko and T. N. C. Venkatesan

Appl. Phys. Lett. 32, 147 (1978); http://dx.doi.org/10.1063/1.89962 (3 pages) | Cited 51 times

Online Publication Date: 8 August 2008

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A single pulse of ruby laser radiation is shown to cause significant regrowth in the amorphous region of heavily ion‐implanted GaAs. The implanted Te atoms and the host material both show good channeling dips, suggesting essentially complete substitutionality of the Te. There has been only a minor redistribution of the tellurium atoms. The resulting local Te concentration in the laser‐irradiated sample is more than ten times the known maximum solubility of Te in GaAs.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.-y Defects and impurities in crystals; microstructure
79.20.Ds Laser-beam impact phenomena

Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry

A. Lidow, J. F. Gibbons, V. R. Deline, and C. A. Evans

Appl. Phys. Lett. 32, 149 (1978); http://dx.doi.org/10.1063/1.89963 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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Depth profiles of Se‐implanted GaAs samples have been measured as a function of substrate temperature during ion implanation using secondary ion mass spectrometry (SIMS). It has been found that Se diffuses anomalously fast during the implantation and that this diffusion is independent of implant time. Annealing of these implanted layers following the implantation, however, produces no additional diffusion even when annealed at 1000 °C for 15 min.
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61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Formation of metallic LiH

J. Rimas Vaišnys and Jonas S. Žmuidzinas

Appl. Phys. Lett. 32, 152 (1978); http://dx.doi.org/10.1063/1.89964 (2 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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It is calculated that a metallic form of LiH will occur at a pressure of 1.1 Mbar, with a molar volume of 5.0 cm3 mole−1.
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71.30.+h Metal-insulator transitions and other electronic transitions
62.50.-p High-pressure effects in solids and liquids

Brillouin scattering in a thin‐film waveguide

N. Rowell, V. C.‐Y. So, and G. I. Stegeman

Appl. Phys. Lett. 32, 154 (1978); http://dx.doi.org/10.1063/1.89965 (2 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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Brillouin scattering from thermal phonons in a thin‐film integrated optics waveguide has been measured and interpreted to yield the elastic constants of the film.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
68.60.-p Physical properties of thin films, nonelectronic
42.82.-m Integrated optics

Transient behavior of a nonlinear Fabry‐Perot

T. Bischofberger and Y. R. Shen

Appl. Phys. Lett. 32, 156 (1978); http://dx.doi.org/10.1063/1.89966 (3 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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We have carried out a theoretical and experimental study on the transient characteristics of a nonlinear Fabry‐Perot filled with Kerr liquid. Agreement between theory and experiment is excellent. Characteristic curves for the steady‐state operation are deduced.
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42.60.Fc Modulation, tuning, and mode locking
42.25.Bs Wave propagation, transmission and absorption
07.60.Ly Interferometers
78.20.Jq Electro-optical effects

Multilayer light scattering and the laser gyro

M. L. Scott and J. M. Elson

Appl. Phys. Lett. 32, 158 (1978); http://dx.doi.org/10.1063/1.89967 (4 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Calculations of the angular distributions of scatter have been carried out using an exponential autocorrelation function for the roughness at the interfaces of a multilayer dielectric mirror. This vector scattering theory indicates that techniques are available to reduce scatter levels.
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42.60.By Design of specific laser systems
42.25.Fx Diffraction and scattering
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.62.-b Laser applications

Electro‐optic guided‐to‐radiation mode conversion in Cu‐diffused LiTaO3 waveguide with periodic electrodes

Y. Okamura, S. Yamamoto, and T. Makimoto

Appl. Phys. Lett. 32, 161 (1978); http://dx.doi.org/10.1063/1.89968 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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We report electro‐optically controlled guided‐to‐radiation mode conversion at 0.63‐μm wavelength in a waveguide formed by electrodiffusing Cu ions in a c‐plate crystal of LiTaO3. The efficiency of conversion from TE1 guided mode to TM radiation modes was measured by a low‐frequency (0.5 kHz) modulation experiment with special attention paid to the dependence of the modulation efficiency on the longitudinal period of coplanar electrodes. Maximum mode conversion was observed at a 298‐μm period where the efficiency was 21%/cm (16% for actual interaction length of 7.4 mm) with an applied voltage 600 V across the 45‐μm gap. With a slight deviation (±10 μm) in the period, the efficiency was decreased to less than 10%/cm and its sensitivity is attributed to the change in the transverse field overlap of the coupled modes.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Fabrication of deep square wave structures with micron dimensions by reactive sputter etching

H. W. Lehmann and R. Widmer

Appl. Phys. Lett. 32, 163 (1978); http://dx.doi.org/10.1063/1.89975 (3 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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See Also: Erratum

Show Abstract
Square wave gratings with periodicities as small as 1.4 μm have been etched into fused quartz by reactive sputter etching in CF4 and CHF3. Grooves with a perfectly rectangular cross section have been etched with a depth of up to 3 μm. The etching is probably due to highly reactive species produced directly on the substrate surface by an ion‐induced dissociation process.
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42.79.Dj Gratings
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments

Observation of the time‐reversed replica of a monochromatic optical wave

S. M. Jensen and R. W. Hellwarth

Appl. Phys. Lett. 32, 166 (1978); http://dx.doi.org/10.1063/1.89976 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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We have generated, essentially instantaneously, a time‐reversed (TR) replica (phase conjugate) of a monochromatic optical wave (at 6943 Å). Replication occurred through an interaction with a standing pump wave (at the same frequency) mediated by the instantaneous nonlinear refractive index of liquid CS2. The power in the TR replica could be made up to half that in the beam being replicated before other nonlinear effects intervened.
Show PACS
42.30.Va Image forming and processing
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Coherent excitation of vibration and direct measurement of the dephasing time with synchronously mode‐locked dye lasers

Chi H. Lee and D. Ricard

Appl. Phys. Lett. 32, 168 (1978); http://dx.doi.org/10.1063/1.89977 (4 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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A new application of a synchronously mode‐locked dye laser has been demonstrated. The 1086‐cm−1 optical phonon of calcite was coherently excited by the pump and dye laser pulses and its dephasing time measured. The result, 7.1±1 ps at room temperature, agrees well with the Raman linewidth measured on the same sample.
Show PACS
63.20.-e Phonons in crystal lattices
06.60.Jn High-speed techniques (microsecond to femtosecond)
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.-v Laser optical systems: design and operation

Spectral tuning of ArF and KrF discharge lasers

T. R. Loree, K. B. Butterfield, and D. L. Barker

Appl. Phys. Lett. 32, 171 (1978); http://dx.doi.org/10.1063/1.89978 (3 pages) | Cited 35 times

Online Publication Date: 8 August 2008

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Simple prism tuning of a well‐passivated double‐discharge excimer laser has resulted in tuning ranges of better than 20 Å in both ArF and KrF. Neither tuning is continuous, being interrupted by nonlasing holes in regions of self‐absorption. A two‐prism dispersive chain results in a linewidth of 1–2 Å for KrF and less than 0.5 Å for ArF.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Infrared four‐wave sum and difference frequency generation in liquid CO‐O2 mixtures

Helge Kildal and S. R. J. Brueck

Appl. Phys. Lett. 32, 173 (1978); http://dx.doi.org/10.1063/1.89979 (4 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Four‐wave sum and difference frequency generation of the outputs of two CO2 TEA lasers are demonstrated in liquid CO‐O2 mixtures at 77 K. The efficiencies of these processes are enhanced by a two‐photon resonance with the CO vibrational mode. A study of the polarization dependence and the line shape of the two‐photon resonance is reported together with measurements of the mixing efficiencies. The difference frequency generation process can be phase matched using noncollinear phase matching.
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42.65.-k Nonlinear optics
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Planarized solid‐state epitaxial growth of Si and its effect on Schottky barrier diodes

T. M. Reith and M. J. Sullivan

Appl. Phys. Lett. 32, 177 (1978); http://dx.doi.org/10.1063/1.89980 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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Planarized solid‐state Si epitaxy can be grown controllably from Si‐doped Al thin films by first depositing a very thin high‐temperature underlay film of pure Al on the substrates. It is proposed that both Si pits, in pure Al contacts and Si mesas, in Si‐doped Al contacts, nucleate and grow at local defect sites in the native SiO2 on the Si substrate; elimination of the sites leads to planar Si epitaxy structures. The electrical effect of the planar structures, which are p doped with Al, on n‐type Schottky barrier diodes is similar to the thin‐layer‐plus mesa structures which are characteristic of conventionally processed Si‐doped Al Schottky diodes after heat treatment. The planarized structures should, however, lead to more uniform and controllable results.
Show PACS
85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.-a Thin film structure and morphology

p‐n junction detector directly integrated with (Ga1−xAlx)As LOC‐DBR laser

Mohammad Kazem Shams, Hirafumi Namizaki, and Shyh Wang

Appl. Phys. Lett. 32, 179 (1978); http://dx.doi.org/10.1063/1.89981 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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Integration of a GaAs‐ (Ga1−xAlx)As LOC‐DBR laser with a detector is demonstrated. For integrated laser‐detector pairs in which the laser output is coupled to the detector via a 460‐μm‐long interconnecting waveguide, differential transfer efficiencies around 1% are measured. Threshold current densities as low as 6.4 kA/cm2 around room temperature are obtained.
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42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes

Optical injection locking and switching of transistor oscillators

H. W. Yen and M. K. Barnoski

Appl. Phys. Lett. 32, 182 (1978); http://dx.doi.org/10.1063/1.89982 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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In this letter we describe a novel approach of achieving injection locking of solid‐state oscillators. This is done by taking an external driving signal to modulate a GaAlAs cw injection laser and then guiding the modulated light output in a fiber waveguide to illuminate the active solid‐state component in the oscillator circuit. Experiments were carried out with silicon transistor oscillators with frequency ranging from below 1 kHz up to 1.8 GHz. Optical injection locking was observed not only at fundamental frequencies, but also at various subharmonics with less tolerance in frequency deviation. It is also possible to achieve switching and locking simultaneously in these oscillators.
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84.30.Ng Oscillators, pulse generators, and function generators
42.60.Fc Modulation, tuning, and mode locking
85.30.Pq Bipolar transistors

Exciton transport in SiO2 as a possible cause of surface‐state generation in MOS structures

Z. A. Weinberg and G. W. Rubloff

Appl. Phys. Lett. 32, 184 (1978); http://dx.doi.org/10.1063/1.89983 (3 pages) | Cited 22 times

Online Publication Date: 8 August 2008

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Positive charge and surface states are found to accumulate at the Si‐SiO2 interface in MOS structures which are illuminated by vacuum ultraviolet photons (≳9 eV) with a negative bias applied to the metal electrode. A series of experiments seems to rule out the obvious explanations for this effect—photon and hot‐electron processes. We suggest the possibility that excitons, generated by photon absorption in the SiO2, diffuse to the Si‐SiO2 interface where they are separated into a free electron absorbed into the silicon substrate and a hole trapped at the interface.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.35.-y Excitons and related phenomena
72.40.+w Photoconduction and photovoltaic effects
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