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1 Feb 1978

Volume 32, Issue 3, pp. 125-194

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On the cooling rates of large‐diameter silicon crystals

P. Capper and J. G. Wilkes

Appl. Phys. Lett. 32, 187 (1978); http://dx.doi.org/10.1063/1.89958 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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A theoretical study has been carried out on the cooling rates of silicon crystals, with diameters between 50 and 100 mm, from 650 °C to room temperature under natural and forced convection conditions. Experimental results are described for a 75‐mm‐diam crystal, again in both natural and forced convection conditions, and are seen to agree well with the theoretical predictions. The significance of the results is discussed in terms of actual changes in donor concentration of a Czochralski‐grown crystal, after ’’annealing’’ at 650 °C, and it is concluded that ’’annealing’’ of ingots may not be sufficient for close‐tolerance materials and reheating of slices may be necessary.
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81.10.Fq Growth from melts; zone melting and refining
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Measurement of effective mass in In0.9Ga0.1As0.22P0.78 by Shubnikov–de Haas oscillations

J. B. Restorff, Bland Houston, J. R. Burke, and R. E. Hayes

Appl. Phys. Lett. 32, 189 (1978); http://dx.doi.org/10.1063/1.89984 (2 pages) | Cited 26 times

Online Publication Date: 8 August 2008

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The 0 K electron effective mass in an In0.9Ga0.1As0.22P0.78 epitaxial layer has been calculated from the temperature dependence of Shubnikov–de Haas oscillation amplitudes, giving m∗=0.060m0. The measured value is compared to values m∗=0.059m0 and m∗=0.058m0 obtained from interpolations of the masses of related binary compounds by two different methods.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Light‐induced superconducting weak links

J. T. C. Yeh and D. N. Langenberg

Appl. Phys. Lett. 32, 191 (1978); http://dx.doi.org/10.1063/1.89985 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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An experimental test of the effect of localized light irradiation on superconducting weak links shows behavior in qualitative accord with predictions of Volkov.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
74.78.-w Superconducting films and low-dimensional structures

A general relation between resistance fluctuations from enthalpy fluctuations and resistance response to current changes

Michael B. Weissman

Appl. Phys. Lett. 32, 193 (1978); http://dx.doi.org/10.1063/1.89986 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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The spectral shape and magnitude of spontaneous resistance fluctuations due to enthalpy fluctuations are shown to be determined by the resistance response to current impulses for a broad class of resistors, including any resistor containing only one type of conducting material, regardless of the resistor geometry. Implications for the design and interpretation of experiments are discussed.
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72.70.+m Noise processes and phenomena
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
73.61.At Metal and metallic alloys
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