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15 Feb 1978

Volume 32, Issue 4, pp. 197-263

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Temperature coefficient of SAW velocity on epitaxial Li1−xNaxNbO3 thin films

E. J. Staples, R. R. Neurgaonkar, and T. C. Lim

Appl. Phys. Lett. 32, 197 (1978); http://dx.doi.org/10.1063/1.89988 (2 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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Liquid‐phase epitaxy of doped Li1−xNaxNbO3 films on LiNbO3 has been performed. Sodium‐doped films show a 30% reduction in the temperature coefficient of surface acoustic wave velocity.
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68.55.-a Thin film structure and morphology
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Pt Surface waves in solids and liquids

Light‐sensitive Rayleigh‐wave generation by surface piezoelectricity

K. Fossheim and L. Bjerkan

Appl. Phys. Lett. 32, 199 (1978); http://dx.doi.org/10.1063/1.89989 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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A simple method is described for generation and detection of surface waves in nonpiezoelectric dielectrics due to creation of a space‐charge region and a polarized surface layer under the interdigital electrodes. By direct evaporation of electrodes onto the surface of nonpiezoelectric materials, and without use of dc bias, Rayleigh waves with a signal‐to‐noise ratio as high as 60 dB have been generated. We have demonstrated the method on cubic KTaO3 and cubic BaTiO3. Additional application of dc bias further enhances the signal which is retained even after removal of the bias. High sensitivity to band‐gap illumination is observed, allowing a direct determination of the band gap.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
62.65.+k Acoustical properties of solids
77.65.-j Piezoelectricity and electromechanical effects

Exact analysis of mode interaction phenomena in integrated optics: Application to acousto‐optics

V. So, R. Normandin, and G. I. Stegeman

Appl. Phys. Lett. 32, 201 (1978); http://dx.doi.org/10.1063/1.89990 (3 pages) | Cited 4 times

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A new theory of coherent mode interactions in integrated optics is described with particular reference to light scattering by surface waves. This analysis is characterized by exact solutions to polarization‐driven wave equations and electromagnetic boundary conditions.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Surface acoustic wave properties of fresnoite, Ba2Si2TiO8

John Melngailis, J. F. Vetelino, A. Jhunjhunwala, T. B. Reed, R. E. Fahey, and E. Stern

Appl. Phys. Lett. 32, 203 (1978); http://dx.doi.org/10.1063/1.89991 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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Surface acoustic wave properties of fresnoite have been calculated from bulk material parameters and have been measured along several orientations on samples cut from Czochralski‐grown crystals. Favorable properties are measured for the z‐cut x‐propagating wave: the coupling coefficient k2 is 0.016±0.003, the velocity is 2678 m/sec, and the temperature coefficient of delay is 51×10−6/ °C. These values, as well as those measured for the much lower coupling x‐z and x‐y surface waves, are in agreement with calculations. The calculations also predict that, for surface waves propagating in the x direction on a surface whose normal is at 45° to z and y axes, the coupling coefficient is 10% higher than calculated for the above z‐x case.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
62.30.+d Mechanical and elastic waves; vibrations

High‐intensity transmission characteristics of CH3‐CHF2 and CHFCHF

R. T. V. Kung and M. Sirchis

Appl. Phys. Lett. 32, 206 (1978); http://dx.doi.org/10.1063/1.89992 (3 pages) | Cited 3 times

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The high‐intensity transmission characteristics of CH3CHF2 and CHFCHF were investigated in the intensity range of 5×106 to 5×108 W/cm2 for various lines of the CO2 lasing branches. For similar gas pressures, the ratio of small to large intensity absorption coefficients is relatively constant at various CO2 lasing lines. The ratio of ∼6 measured for CH3CHF2 at 10.6 μm renders this molecule a good candidate for CO2 amplifier gain isolation.
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33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
42.60.Fc Modulation, tuning, and mode locking

Evidence of resonance absorption in laser‐produced plasmas from the polarization and angular dependence of high‐energy x‐ray bremsstrahlung emission

B. Luther‐Davies

Appl. Phys. Lett. 32, 209 (1978); http://dx.doi.org/10.1063/1.89993 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Measurements are reported of the polarization and angular dependence of the amplitude and ’’temperature’’ of high‐energy bremsstrahlung emission from planar copper targets irradiated with 25‐psec neodymium laser pulses at 5±2×1014 W/cm2. A resonance in the emission is observed for p‐polarized incident radiation at an angle of incidence of 25°. The results indicate the presence of plasma density scale lengths of about 1 μm and 17% absorption due to the resonance absorption mechanism.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Photoionization of uranium atoms by an argon ion laser

T. Mochizuki, M. Morikawa, and C. Yamanaka

Appl. Phys. Lett. 32, 212 (1978); http://dx.doi.org/10.1063/1.89994 (3 pages)

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The pohotoionization of uranium atoms by the 3511‐ and 3345‐Å uv lines from an argon ion laser was observed and attributed to resonant two‐photon ionization. Application to uranium laser isotope separation is discussed.
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32.80.Fb Photoionization of atoms and ions
28.60.+s Isotope separation and enrichment

Magnetic field reversal induced by an intense rotating electron beam in an initially neutral gas

C. W. Roberson, D. Tzach, and N. Rostoker

Appl. Phys. Lett. 32, 214 (1978); http://dx.doi.org/10.1063/1.89987 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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We find field reversals up to four times the initial field and changes in the magnetic field on the axis of symmetry of 6 kG when a rotating electron beam is injected through a cusp into an initially neutral gas. The change in magnetic field on the axis was found to be independent of the magnetic field. This is shown to be consistent with measurements that the cusp transmission coefficient times the ratio of the azimuthal velocity (Vϑ) to the axial velocity (Vz) is independent of magnetic field.
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52.55.Jd Magnetic mirrors, gas dynamic traps
52.40.Mj Particle beam interactions in plasmas
52.50.Dg Plasma sources

Laser‐driven shock wave inside a glass microballoon target

H. Azechi, S. Oda, K. Tanaka, T. Norimatsu, T. Sasaki, T. Yamanaka, and C. Yamanaka

Appl. Phys. Lett. 32, 216 (1978); http://dx.doi.org/10.1063/1.89995 (3 pages)

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A shock wave in fusion fuel filled in a glass microballoon target was directly observed. The shock speed and the width of the shock front were 5×107 cm/s and a few μm, respectively, which are in good agreement with the shock‐tube theory.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.35.Tc Shock waves and discontinuities

High‐temperature annealing of the SiO2/GaAs system

Iwao Ohdomari, Shuzo Mizutani, Hitoshi Kume, Mutsuhiro Mori, Itsuro Kimura, and Kenji Yoneda

Appl. Phys. Lett. 32, 218 (1978); http://dx.doi.org/10.1063/1.89996 (3 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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A neutron activation technique has been used to analyze the gallium content in SiO2 films deposited on n‐type GaAs. Gallium was observed in the SiO2 films after annealing at temperatures between 730 and 940 °C. It is found that the surface of GaAs reacts with the H2O in the SiO2 films and/or ambient gas via pinholes at these high temperatures. The reaction is influenced by the partial pressure of water in the ambient gas.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.Jp Activation analysis and other radiochemical methods
81.65.-b Surface treatments

Stimulated emission at 9.75 μm following two‐photon excitation of methyl fluoride

D. Prosnitz, Ralph R. Jacobs, William K. Bischel, and Charles K. Rhodes

Appl. Phys. Lett. 32, 221 (1978); http://dx.doi.org/10.1063/1.89997 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Stimulated emission at 9.75 μm has been observed in 12CH3F, corresponding to the 2ν3→ν3 transition, subsequent to two‐photon excitation with CO2 laser radiation. Results are presented for the dependence of laser output power as a function of 12CH3F pressure, and for a fixed amount of methyl fluoride, as a function of D2 and Ne diluent pressures.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Formation and quenching of XeF∗ in Ne/Xe/F2 mixtures

M. Rokni, J. H. Jacob, J. A. Mangano, and R. Brochu

Appl. Phys. Lett. 32, 223 (1978); http://dx.doi.org/10.1063/1.89998 (3 pages) | Cited 26 times

Online Publication Date: 8 August 2008

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Recent laser results in XeF∗ show a considerable improvement when the Ar buffer is replaced by Ne. In this letter we report on the investigations of the formation and quenching processes in typical laser mixtures of Ne/Xe/F2. From our experimental observations, it appears that the Ne ions formed by the fast electrons do not form Xe+ by a direct charge transfer. We have also determined that the two‐body quenching of XeF∗ by Ne is negligible, while the three‐body quenching rate constant is 2.5×10−33 cm6/sec. Finally, the three‐body quenching rate constant for XeF∗+Xe+Ne is 7.8×10−31 cm6/sec.
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34.50.-s Scattering of atoms and molecules
31.50.Df Potential energy surfaces for excited electronic states
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Electron‐beam‐controlled discharge HgCl∗ laser

Kenneth Y. Tang, R. O. Hunter, J. Oldenettel, C. Howton, D. Huestis, D. Eckstrom, B. Perry, and M. McCusker

Appl. Phys. Lett. 32, 226 (1978); http://dx.doi.org/10.1063/1.89999 (3 pages) | Cited 23 times

Online Publication Date: 8 August 2008

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Laser action of HgCl∗ was observed using an electron‐beam‐controlled discharge to pump a gas mixture of Hg/Cl2/Ar. An order of magnitude in the fluorescence enhancement was obtained. This gives an excitation efficiency by controlled discharge to be a factor of about 2 higher than that by direct electron‐beam pumping. In addition to the previously reported 5576‐Å laser transition of HgCl∗, a strong transition at 5584 Å was also observed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)

Sensitive optoacoustic detection of carbon monoxide by resonance absorption

Robert Gerlach and Nabil M. Amer

Appl. Phys. Lett. 32, 228 (1978); http://dx.doi.org/10.1063/1.90000 (4 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Sensitive (0.15 ppm) and unambiguous detection of carbon monoxide is reported and a comparison of acoustically resonant and nonresonant detectors is given. The pressure dependence of the optoacoustic signal is discussed in the context of atmospheric absorption.
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82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.68.Ge Effects of clouds and water; ice crystal phenomena
42.68.Kh Effects of air pollution
98.38.Bn Atomic, molecular, chemical, and grain processes
98.38.Er Interstellar masers
98.58.Bz Atomic, molecular, chemical, and grain processes
98.58.Ec Interstellar masers

Curved stripe GaAs : GaAlAs diode lasers and waveguides

D. R. Scifres, W. Streifer, and R. D. Burnham

Appl. Phys. Lett. 32, 231 (1978); http://dx.doi.org/10.1063/1.90001 (4 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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We report room‐temperature operation of GaAs : GaAlAs double‐heterostructure lasers with curved stripes. The power‐output–vs–current curves are linear and free of kinks up to substantial levels. The lasers do not exhibit relaxation oscillations under pulsed operation and have stable near‐ and far‐field patterns. A cleaved laser with a 10‐μm‐wide stripe containing a 1‐mm‐radius curve did not exhibit a kink until more than 100‐mW/facet output power was obtained under pulsed operation. Lasers of this geometry should prove useful for waveguide coupling in integrated optics and as a discrete source for fiber‐optic applications.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

InP‐GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelength

Haruo Nagai and Yoshio Noguchi

Appl. Phys. Lett. 32, 234 (1978); http://dx.doi.org/10.1063/1.90002 (3 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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InP/GaxIn1−xAsyP1−y/GaxIn1@qL −x AsyP1−y double‐heterostructure LED’s in a 1.5‐μm‐wavelength region have been fabricated by the LPE method. The half‐width value of the spectrum is about 1100 Å, and the external quantum efficiency is 1.5% for undoped active layers of Ga0.28In0.72As0.77P0.23. The threshold current density of the laser oscillation at 1.52 μm and 300 K is 104 A/cm2 μm. No symptom of an initial degradation has been observed.
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85.60.Jb Light-emitting devices
42.55.Px Semiconductor lasers; laser diodes

Isotopically selective ir photodissociation of SeF6

Joe J. Tiee and Curt Wittig

Appl. Phys. Lett. 32, 236 (1978); http://dx.doi.org/10.1063/1.90003 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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The isotopically selective ir photodissociation of SeF6 is reported. The output from an NH3 laser (780.5 cm−1, 50 mJ, 200 nsec FWHM) is used to photodissociate SeF6, and the five abundant isotopes of Se are all enriched despite the rather small (∼1.6 cm−1/amu) isotope shift of the ν3 vibration. These results are predictable using a simple empirical technique which can be applied equally well to the ir photodissociation of other molecules.
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82.50.-m Photochemistry
28.60.+s Isotope separation and enrichment
33.80.-b Photon interactions with molecules

Sustained discharge excitation of HgCl and HgBr B2Σ+1/2→X2Σ+1/2 lasers

W. T. Whitney

Appl. Phys. Lett. 32, 239 (1978); http://dx.doi.org/10.1063/1.90004 (3 pages) | Cited 45 times

Online Publication Date: 8 August 2008

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This letter reports e‐beam‐sustained discharge excitation of HgCl and HgBr lasers operating on the green and blue‐green B2Σ+1/2→X2Σ+1/2 bands in 2‐atm mixtures of Ar/Hg/Cl2 and Ar/Hg/BrCCl3. The excitation channel appears to be through the reaction of Hg(3P) metastable atoms with the halogen‐containing species.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
31.50.Df Potential energy surfaces for excited electronic states

A narrow‐bandwidth picosecond laser

D. Huppert and P. M. Rentzepis

Appl. Phys. Lett. 32, 241 (1978); http://dx.doi.org/10.1063/1.90005 (4 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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We have examined the advantages of using Nd3+/YAG as an amplifier for a ∼6 psec FWHM pulse generated by a mode‐locked Nd3+/glass oscillator. The Nd3+/glass oscillator pulse is characterized by 100 cm−1 bandwidth at 1060 nm with variable temporal substructure. Passage of this pulse through a Nd3+/YAG rod resulted in wavelength‐selected amplification of the specific Nd3+/YAG lines located within the envelope of the Nd/glass pulse. The result is a 100‐fold amplified pulse consisting of two bands at 1061 nm and 1064 nm, each <3 cm−1 in bandwidth with an average duration of 6 psec and as low as 4 psec.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Ce Glasses, quartz
42.60.By Design of specific laser systems

Lorentz‐Lorenz correlation for reactively plasma deposited Si‐N films

A. K. Sinha and E. Lugujjo

Appl. Phys. Lett. 32, 245 (1978); http://dx.doi.org/10.1063/1.90006 (2 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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Amorphous Si‐N films were prepared by reactive plasma deposition from SiH4 and NH3 in a radial flow reactor at 275 °C, and studied using 1.8‐MeV 4He+ Rutherford backscattering analysis. The films had a Si/N ratio ranging from 0.75 to 1.5, density from 2.8 to 2.1 g cm−3, and refractive index from 1.9 to 2.3. These data have been correlated using the Lorentz‐Lorenz equation, yielding a self‐consistent set of electronic polarizabilities αN and αSi. The αSi is found to be a function of the Si/N ratio, indicating the increasing presence of Si‐H complexes in off‐stoichiometric films.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic
77.55.-g Dielectric thin films

A microwave GaAs insulated gate FET

D. L. Lile, D. A. Collins, L. Messick, and A. R. Clawson

Appl. Phys. Lett. 32, 247 (1978); http://dx.doi.org/10.1063/1.90007 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Microwave power gain has been obtained in MIS gated field effect transistors (FET’s) made on n‐type GaAs with 4‐μm gate lengths. The magnitude of this gain is comparable to that observed with similar geometry Schottky gate devices.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.80.Ey III-V and II-VI semiconductors
73.61.Ng Insulators

Distinction between donor and acceptor character of surface states in the Si‐SiO2 interface

K. Ziegler

Appl. Phys. Lett. 32, 249 (1978); http://dx.doi.org/10.1063/1.90008 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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The charge type of interface states is determined utilizing surface potential fluctuations. For thermally grown (111) ‐oriented n‐type silicon, it is shown that the surface states below the conduction band are only donor states. Within the conduction band, an upper limit of 5×1011 possible donor states per cm2 is found. Within and above the valence band, acceptor states are either absent or at most present at a lower level than donor states. An upper limit of 1.6×1011 possible acceptor states per cm2 is obtained in this energy region.
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73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Reactive sputtering of gallium nitride thin films for GaAs MIS structures

T. Hariu, T. Usuba, H. Adachi, and Y. Shibata

Appl. Phys. Lett. 32, 252 (1978); http://dx.doi.org/10.1063/1.90009 (2 pages) | Cited 23 times

Online Publication Date: 8 August 2008

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Amorphous gallium nitride was deposited onto various substrates by reactive sputtering of gallium in nitrogen ambient. Higher pressure up to 2×10−1 Torr is effective in making films closer to the stoichiometric composition. Annealing at 350 °C improves the insulating property of as‐deposited films by decreasing dc and ac conductance. The surface‐state density and time constant of a GaAs MIS structure, corrected for the dispersive behavior of the insulator, was derived as 7.6×1011 cm−2 eV−1 and 1.9×10−4 sec, respectively. This surface‐state density is much lower than that for the native oxide.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
81.15.Cd Deposition by sputtering
73.20.-r Electron states at surfaces and interfaces

Chemical vapor deposition of silicon using a CO2 laser

C. P. Christensen and K. M. Lakin

Appl. Phys. Lett. 32, 254 (1978); http://dx.doi.org/10.1063/1.90010 (3 pages) | Cited 51 times

Online Publication Date: 8 August 2008

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Chemical vapor deposition of polycrystalline silicon is reported in which a CO2 laser is used for substrate heating. With this technique, deposition can be spatially limited to only a small portion of the substrate, and a spatial resolution of 50 μ is demonstrated. Since the reaction chamber and majority of the substrate are at much lower temperatures, premature gas phase reactions and substrate etching are avoided.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.-v Laser optical systems: design and operation
68.55.-a Thin film structure and morphology

Type‐II localized interface states and Si surface preparation for Ni, Pt, Al/Si Schottky diodes

P. Muret and A. Deneuville

Appl. Phys. Lett. 32, 256 (1978); http://dx.doi.org/10.1063/1.90011 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Evidence for a new class of genuinely localized interface states for Ni, Pt, Al‐Si Schottky diodes has been obtained from capacitance‐voltage measurements. They are in electrical equilibrium with Si, and have short relaxation times (<10−6 s). They give an exponential contribution to the capacitance which is only weakly sensitive to the silicon surface preparation and exhibits a smooth variation with the nature of the metal. These features are consistent with the existence of a Si conduction band tail in the vicinity of the interface as predicted by Inkson.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.-r Electron states at surfaces and interfaces
85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Ns Metal-nonmetal contacts
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