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15 Feb 1978

Volume 32, Issue 4, pp. 197-263

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Current‐voltage characteristics and deep levels in chromium‐doped semi‐insulating GaAs

K. Kitahara, K. Nakai, A. Shibatomi, and S. Ohkawa

Appl. Phys. Lett. 32, 259 (1978); http://dx.doi.org/10.1063/1.90012 (2 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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It is deduced from the correlation among current‐voltage characteristics, photoconductivity spectra, and Fermi‐level energy that the current‐voltage characteristics of chromium‐doped semi‐insulating GaAs are dominated by the concentration ratio of the deep level related with chromium to the deep level related with oxygen. This correlation is explained by a space‐charge‐limited current model.
Show PACS
78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
72.80.Ey III-V and II-VI semiconductors

Constricted double‐heterostructure (AlGa)As diode lasers

D. Botez and P. Zory

Appl. Phys. Lett. 32, 261 (1978); http://dx.doi.org/10.1063/1.90013 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Abstract Unavailable
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
85.60.Jb Light-emitting devices
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