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1 Mar 1978

Volume 32, Issue 5, pp. 265-346

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Surface to bulk mode conversion at interfaces on y‐z LiNbO3

W. S. Goruk and G. I. Stegeman

Appl. Phys. Lett. 32, 265 (1978); http://dx.doi.org/10.1063/1.90042 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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The angular spectra of bulk waves mode converted from surface wave reflections at a free‐metallized, mass‐loaded, and 90° crystal corner interface were measured on y‐z lithium niobate. The fraction of surface acoustic wave energy converted into shear bulk wave energy was dependent on the strength of the surface perturbation at the interface.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.20.Fn Scattering of acoustic waves
43.35.Pt Surface waves in solids and liquids

Ion‐implanted surface‐acoustic‐wave guides on lithium niobate

P. Hartemann, P. Cauvard, and D. Desbois

Appl. Phys. Lett. 32, 266 (1978); http://dx.doi.org/10.1063/1.90018 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Surface‐acoustic‐wave guides have been obtained by ion‐implanting narrow channels on lithium niobate substrates. Guides of different widths have been tested at 150 MHz. Two doses of helium ions at 100 keV have been used. The acoustic power distribution profiles along a guide length close to 21 mm were determined by optical probing. Air‐gap silicon convolvers have been implemented with this kind of guide. An external figure of merit equal to −49 dBm has been measured, whereas without guidance the external figure of merit is only close to −61 dBm for the same transducer pattern.
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61.80.Jh Ion radiation effects
43.35.Pt Surface waves in solids and liquids
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

In situ x‐ray topography of epitaxial Ge layers during growth

W. Hagen and H. J. Queisser

Appl. Phys. Lett. 32, 269 (1978); http://dx.doi.org/10.1063/1.90043 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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In situ x‐ray topography is used for the study of misfit dislocations in growing heteroepitaxial layers. Topograms taken from Ge layers on GaAs substrates show the generation of misfit dislocations at various locations commencing at a layer thickness of about 1000 Å. These dislocations elongate and eventually grow to a dense cross‐grid array. The specially designed epitaxial reactor and the topographic arrangement with a time resolution between 2 and 20 sec are briefly described.
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07.85.-m X- and γ-ray instruments
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology

Diffuse x‐ray scattering from small defects in a very perfect silicon single crystal

Jimpei Harada, Katsuei Wakamatsu, and Shigeru Yasuami

Appl. Phys. Lett. 32, 271 (1978); http://dx.doi.org/10.1063/1.90044 (2 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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Two kinds of diffuse x‐ray scattering were found in a very perfect silicon single crystal. One of them forms a cigar shape, extending along the [111] direction. The other is a disk shape whose normal is also parallel to the [111] direction in reciprocal space. Both diffuse scatterings are predominant along the crystal pulling [111] direction. From simple Fourier inversion of the shapes of the diffuse scatterings, it is concluded that the platelike defects and needlelike defects are the origins of the diffuse scatterings. The platelike defects observed differ from those observed by Patel for Czochralski silicon with heat treatment.
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61.05.C- X-ray diffraction and scattering
61.72.jd Vacancies
61.72.jj Interstitials
81.10.Fq Growth from melts; zone melting and refining
78.70.Ck X-ray scattering

Two‐dimensional simulation of the hydromagnetic Rayleigh‐Taylor instability in an imploding foil plasma

N. F. Roderick, T. W. Hussey, R. J. Faehl, and R. W. Boyd

Appl. Phys. Lett. 32, 273 (1978); http://dx.doi.org/10.1063/1.90045 (3 pages) | Cited 28 times

Online Publication Date: 8 August 2008

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Two‐dimensional (r‐z) magnetohydrodynamic simulations of the electromagnetic implosion of metallic foil plasmas show, for certain initial configurations, a tendency to develop large‐amplitude perturbations characteristic of the hydromagnetic Rayleigh‐Taylor instability. These perturbations develop at the plasma magnetic field interface for plasma configurations where the density gradient scale length, the characteristic dimension for the instability, is short. The effects on the plasma dynamics of the implosion will be discussed for several initial foil configurations. In general, the growth rates and linear mode structure are found to be influenced by the plasma shell thickness and density gradient scale length, in agreement with theory. The most destructive modes are found to be those with wavelengths of the order of the plasma shell thickness.
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52.30.-q Plasma dynamics and flow
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.65.-y Plasma simulation

Physical and electrical properties of laser‐annealed ion‐implanted silicon

A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, V. R. Deline, P. Williams, and C. A. Evans

Appl. Phys. Lett. 32, 276 (1978); http://dx.doi.org/10.1063/1.90046 (3 pages) | Cited 107 times

Online Publication Date: 8 August 2008

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The use of a laser as a tool for annealing of ion‐implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000 °C 30‐min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.
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61.80.Jh Ion radiation effects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Radiation‐induced conduction under high electric field (1×106 to 1×108 V/m) in polyethylene‐terephthalate

H. Maeda, M. Kurashige, D. Ito, and T. Nakakita

Appl. Phys. Lett. 32, 278 (1978); http://dx.doi.org/10.1063/1.90019 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Radiation‐induced conduction in polyethylene‐terephthalate (PET) has been measured under high electric field (1.0×106 to 1.6×108 V/m). In a 6‐μm‐thick PET film, saturation of the radiation‐induced current occurs at field strengths above 1.2×108 V/m. This has been demonstrated by the thickness and dose rate dependence of the induced current. Radiation‐induced conductivity increases monotonically with field strength, then shows a saturation tendency. This may be explained by geminate recombination. Above 1×108 V/m, slowly increasing radiation‐induced current appears. This may be caused by electron injection from the cathode, enhanced by the accumulation of the hetero space charges near it.
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61.80.Ed γ-ray effects
72.20.Ht High-field and nonlinear effects
72.40.+w Photoconduction and photovoltaic effects

Chemical control of optical damage in lithium niobate

R. L. Holman, P. J. Cressman, and J. F. Revelli

Appl. Phys. Lett. 32, 280 (1978); http://dx.doi.org/10.1063/1.90020 (4 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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A new chemical process has been developed that significantly affects the susceptibility of LiNbO3 crystals and optical waveguiding layers to the laser‐induced effects known as optical damage. The process involves controlling the nonstoichiometry of LiNbO3 by diffusion of lithium oxide. Susceptibility to optical damage in bulk crystals was reduced by increasing the nonstoichiometry (out‐diffusion) and enhanced by decreasing the nonstoichiometry (in‐diffusion). Typically, low‐loss optical waveguides formed by the process supported one or more TE modes and tolerated more than 10 kW/cm2 laser transmission at 488.0 nm without inducing any measurable beam profile distortion.
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79.20.Ds Laser-beam impact phenomena
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Gn Optical waveguides and couplers
81.40.Tv Optical and dielectric properties related to treatment conditions

Instability and regenerative pulsation phenomena in Fabry‐Perot nonlinear optic media devices

S. L. McCall

Appl. Phys. Lett. 32, 284 (1978); http://dx.doi.org/10.1063/1.90021 (3 pages) | Cited 58 times

Online Publication Date: 8 August 2008

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Fabry‐Perot nonlinear optic devices may undergo regenerative pulsations. Such effects may be used to convert cw laser power into a train of light pulses.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Third‐order nonlinear susceptibility ratio by CARS of mixtures: CS2 in C6H6

E. Wiener‐Avnear, S. Chandra, and A. Compaan

Appl. Phys. Lett. 32, 286 (1978); http://dx.doi.org/10.1063/1.90022 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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A precise value of the third‐order nonresonant susceptibility ratio of carbon disulphide to benzene is determined from coherent anti‐Stokes Raman scattering (CARS) experiments in mixtures of the two liquids. The value is derived from the variation of the frequency separation between the Raman resonance and the interference minimum as a function of the relative concentration of the liquids. The method offers special advantages in many situations of interest.
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42.50.-p Quantum optics
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.30.C- Liquids

Optoacoustic detection of sulphur dioxide below the parts per billion level

K. P. Koch and W. Lahmann

Appl. Phys. Lett. 32, 289 (1978); http://dx.doi.org/10.1063/1.90023 (3 pages) | Cited 30 times

Online Publication Date: 8 August 2008

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We report a novel optoacoustic detection scheme which is suited for use with low‐power radiation sources. The improved detection capability is demonstrated for SO2 with a frequency‐doubled dye laser of 1 mW uv output power, allowing the detection of SO2 concentrations as low as 0.12 ppb.
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82.80.-d Chemical analysis and related physical methods of analysis
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.60.-v Laser optical systems: design and operation
92.60.Sz Air quality and air pollution

A closed‐cycle gas recirculating system for rare‐gas halide excimer lasers

Philip M. Johnson, Norman Keller, and Robert E. Turner

Appl. Phys. Lett. 32, 291 (1978); http://dx.doi.org/10.1063/1.90024 (2 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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A closed‐cycle recirculating system is described which enables prolonged operation of a rare‐gas halide excimer laser on a single charge of rare‐gas mixture. The flowing gas is continuously purified in a high‐temperature titanium gettering furnace, following removal of the halogen by reaction to form a volatile, but condensable, metal halide. The halogen is reintroduced after the rare‐gas purification, being consumed in the operation of the laser along with the gettering metal.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Optical waveguides in LiNbO3 formed by ion implantation of helium

G. L. Destefanis, P. D. Townsend, and J. P. Gailliard

Appl. Phys. Lett. 32, 293 (1978); http://dx.doi.org/10.1063/1.90025 (2 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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The paper reports the formation of optical waveguides in LiNbO3 by the implantation of helium ions. The ion beam damage defines the low‐index regions which surround the waveguide. The computed index profile and the observed modes are in agreement. Changes in n0 of up to 7% are recorded as a saturation index change.
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42.79.Gn Optical waveguides and couplers
61.80.Jh Ion radiation effects
42.82.-m Integrated optics

Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

R. D. Dupuis, P. D. Dapkus, Nick Holonyak, E. A. Rezek, and R. Chin

Appl. Phys. Lett. 32, 295 (1978); http://dx.doi.org/10.1063/1.90026 (3 pages) | Cited 50 times

Online Publication Date: 8 August 2008

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The achievement of room‐temperature (300 °K) operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers with active layers of quantum‐well dimensions ∼200 Å thick is reported. These devices are grown by metalorganic chemical vapor deposition and exhibit pronounced effects in the spectral and lasing characteristics that are related to the small active region thickness and are the first such effects observed for DH lasers in the GaAlAs‐GaAs system.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.45.+h Stimulated emission

Influence of electron‐F2 collisions in rare gas–halide laser discharges

William L. Nighan

Appl. Phys. Lett. 32, 297 (1978); http://dx.doi.org/10.1063/1.90027 (4 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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The influence of F2 vibrational excitation and direct dissociation by electron impact is examined for conditions typical of electron‐beam‐sustained KrF∗ lasers. For values of F2 fractional concentration greater than about 0.003 the results of this analysis indicate that the dissociation process e+F2→2F+e may significantly affect electron‐metastable atom production efficiency, rare gas–halide excimer production efficiency, and gain.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.20.Fs Electron collisions
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions

An optical waveguide TE‐TM mode splitter

Morio Kobayashi, Hiroshi Terui, and Kazumichi Egashira

Appl. Phys. Lett. 32, 300 (1978); http://dx.doi.org/10.1063/1.90028 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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This letter reports an optical waveguide TE‐TM mode splitter using coupling between nonidentical waveguides. The experimental mode splitter was fabricated from glass compositions, and TE0‐TM0 mode splitting has been demonstrated.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Energy dependence of collisionless multiphoton ionization of D2O molecules by a TEA‐CO2 laser

S. L. Chin and D. Faubert

Appl. Phys. Lett. 32, 303 (1978); http://dx.doi.org/10.1063/1.90029 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Time‐resolved ion spectra of the collisionless ionization of D2O was measured. The ionization was energy density dependent with different thresholds for different species of ions.
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33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
33.80.Eh Autoionization, photoionization, and photodetachment

Accelerated step‐temperature aging of AlxGa1−xAs heterojunction laser diodes

H. Kressel, M. Ettenberg, and I. Ladany

Appl. Phys. Lett. 32, 305 (1978); http://dx.doi.org/10.1063/1.90030 (4 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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Double‐heterojunction Al0.3Ga0.7As/Al0.08Ga0.92As lasers (oxide‐striped and Al2O3 facet coated) were subjected to step‐temperature aging from 60 to 100 °C. The change in threshold current and spontaneous output was monitored at 22 °C. The average time required for a 20% pulsed threshold current increases from about 500 h, when operating at 100 °C, to about 5000 h at 70 °C. At 22 °C, the extrapolated time is about 106 h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting ’’activation energies’’ are ∼0.95 eV for laser degradation and ∼1.1 eV for the spontaneous output decrease.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Lyman‐α radiation from Cs‐H+ and Na‐H+ charge transfer processes with a plasma gun

D. C. Haueisen, H. Mahr, J. C. Cassidy, C. L. Tang, D. A. Copeland, and P. L. Hartman

Appl. Phys. Lett. 32, 308 (1978); http://dx.doi.org/10.1063/1.90031 (4 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Lyman‐α radiation due to near‐resonant preferred charge transfer in the systems Cs‐H+ and Na‐H+ was observed for proton fluxes of up to 3×1021 cm−2 sec−1 and alkali densities of up to 1014 cm−3. These results with a plasma gun provide a significant first step towards vuv lasing with such systems.
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34.70.+e Charge transfer
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

High‐power fundamental‐transverse‐mode strip buried heterostructure lasers with linear light‐current characteristics

W. T. Tsang, R. A. Logan, and M. Ilegems

Appl. Phys. Lett. 32, 311 (1978); http://dx.doi.org/10.1063/1.90032 (4 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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A new laser structure, the strip buried heterostructure (SBH) laser, using an active layer strip 2.5 to 10 μm in width, on a low‐loss waveguide is described. Typical test results with pulsed injection, for a 5‐μm strip width, show stable fundamental‐transverse‐mode operation linear light‐current characteristics up to 15 times threshold where the power output is 230 mW/mirror (without AR coating). Single‐longitudinal‐mode oscillation has also been observed up to twice threshold. Far‐field beam divergence of 8°–10° and 26°–30° was obtained in directions parallel and perpendicular to the junction plane, respectively.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Monolithic integration of GaAs‐(GaAl)As light modulators and distributed‐Bragg‐reflector lasers

Mohammad Kazem Shams, Hirofumi Namizaki, and Shyh Wang

Appl. Phys. Lett. 32, 314 (1978); http://dx.doi.org/10.1063/1.90033 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Integration of an intensity light modulator and a LOC‐DBR laser on a single chip has been demonstrated. The injection‐type modulator gives a variable loss (or gain) to the laser light, coupled to it via an interconnecting waveguide, and thus modulates its intensity in accordance with the injected current of the modulator. An extinction ratio of more than 10 was obtained.
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42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Quantitative flow visualization in sodium vapor seeded hypersonic helium

R. B. Miles, E. Udd, and M. Zimmermann

Appl. Phys. Lett. 32, 317 (1978); http://dx.doi.org/10.1063/1.90034 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Sodium vapor seeded into a hypersonic helium flow through an orifice on a model is used as a tracer to determine velocity profiles. A narrow‐linewidth tunable dye laser is scanned across the Doppler‐shifted absorption line of the sodium and the resonant fluorescence is observed. Curves showing the velocity‐shifted pressure‐ and temperature‐broadened absorption lines at several points in the flow are presented. Fluorescence is strong enough to use this technique for quantitative flow visualization: at each laser frequency, a specific velocity component is highlighted and easily observed by eye.
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47.40.Ki Supersonic and hypersonic flows
32.70.Jz Line shapes, widths, and shifts
51.70.+f Optical and dielectric properties
06.30.Gv Velocity, acceleration, and rotation

Incoherent mirrorless bistable optical devices

E. Garmire, J. H. Marburger, and S. D. Allen

Appl. Phys. Lett. 32, 320 (1978); http://dx.doi.org/10.1063/1.90035 (2 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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A new class of bistable optical devices is described which do not require resonators or single‐mode lasers. Optical bistability was demonstrated using a LiNbO3 electro‐optic modulator and a multimode laser.
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42.60.Fc Modulation, tuning, and mode locking
78.20.Jq Electro-optical effects
42.82.-m Integrated optics

Direct observation of the saturation behavior of spontaneous emission in semiconductor lasers

M. Nakamura, K. Aiki, and J. Umeda

Appl. Phys. Lett. 32, 322 (1978); http://dx.doi.org/10.1063/1.90036 (2 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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The saturation behavior of the spontaneous emission intensity from a transverse‐mode stabilized (GaAl)As laser is studied. The spatial hole burning is observed from the top surface of the laser, and a complete gain saturation is confirmed to occur in the lasing region.
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42.55.Px Semiconductor lasers; laser diodes

Stabilization of high‐gain multipass power amplifiers using saturable absorbers: Experience on the LASL Eight‐Beam System

M. D. Montgomery, R. L. Carlson, D. E. Casperson, S. J. Czuchlewski, J. F. Figueira, R. F. Haglund, J. S. Ladish, A. V. Nowak, and S. Singer

Appl. Phys. Lett. 32, 324 (1978); http://dx.doi.org/10.1063/1.90037 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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P‐doped germanium and broadband gas absorbers have been used to increase significantly the energy output of the power amplifiers in the LASL Eight‐Beam CO2 Laser System. Because they are less easily damaged, gas absorbers are preferred for this application.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
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