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1 Mar 1978

Volume 32, Issue 5, pp. 265-346

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Ionic recombination of rare‐gas atomic ions X+ with F− in a dense‐gas X

M. R. Flannery and T. P. Yang

Appl. Phys. Lett. 32, 327 (1978); http://dx.doi.org/10.1063/1.90038 (3 pages) | Cited 49 times

Online Publication Date: 8 August 2008

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Rates for the recombination processes X++F−+X→XF∗+X, (X≡He, Ne, Ar, Kr, Xe) at 300 K are calculated for pressures of the background gas X in the range ∼0.1–50 atm. Rates as high as (2–7) ×10−6 cm3 sec−1 are obtained for pressures 1–5 atm of Xe→He, and in general decrease with increasing ionic mass, except at low gas densities.
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34.50.Lf Chemical reactions
34.70.+e Charge transfer

Thermally grown silicon nitride films for high‐performance MNS devices

Takashi Ito, Takao Nozaki, Hideki Arakawa, and Masaichi Shinoda

Appl. Phys. Lett. 32, 330 (1978); http://dx.doi.org/10.1063/1.90039 (2 pages) | Cited 29 times

Online Publication Date: 8 August 2008

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Amorphous and uniform silicon nitride films with thicknesses of less than 100 Å have been thermally grown on silicon wafers by employing purified ammonia gas. The films are much denser than conventional CVD Si3N4 films. The MNS (metal‐thermal nitride‐silicon) structures have very low Nss in the order of 3×1010 cm−2 eV−1 and an effective electron mobility of larger than 800 cm2/V sec in the fabricated n‐channel MNSFFT.
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68.55.-a Thin film structure and morphology
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films

A new method of fabricating gallium arsenide MOS devices

R. P. H. Chang and J. J. Coleman

Appl. Phys. Lett. 32, 332 (1978); http://dx.doi.org/10.1063/1.90040 (2 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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A new method of fabricating gallium arsenide MOS devices with improved electrical properties is discussed. The device consists of a gallium arsenide substrate overlaid with a gallium arsenic oxide, a thin aluminum oxide, and a metallic contact. The oxide layers are fabricated using a plasma oxidizing process. These MOS devices show very high breakdown voltages (typically ≈±4×106 V/cm) and have low surface‐state densities (≈5×1010 cm−2).
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81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.-z Semiconductor devices

Measurements of interface state density in MNOS structures

Emil Arnold and Henry Schauer

Appl. Phys. Lett. 32, 333 (1978); http://dx.doi.org/10.1063/1.90041 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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A technique is described for measuring the density and energy distribution of surface states at the Si‐SiO2 interface in MNOS capacitors. The effects of charge injection into the insulator are taken into account by making use of a fast voltage ramp to monitor the instantaneous values of the surface potential during a quasistatic capacitance‐voltage sweep. The technique has been used to investigate the effect of charges trapped in the nitride on the interface‐state density.
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73.20.-r Electron states at surfaces and interfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling

Charge retention of MNOS devices limited by Frenkel‐Poole detrapping

K. Lehovec and A. Fedotowsky

Appl. Phys. Lett. 32, 335 (1978); http://dx.doi.org/10.1063/1.90014 (4 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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A simple analytical expression is derived for charge retention in MNOS memory devices assuming that retention loss is limited by Frenkel‐Poole release from monoenergetic traps. This model shows that charge retention becomes eventually independent of the initial charge distribution. Experimental data obtained at elevated temperatures confirm this model and provide a trap depth of 1.5 eV, Frenkel‐Poole coefficient of about 6×10−4 cm1/2 V−1/2 eV, and effective escape attempt rate factor of 1.2×108 sec−1.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Sensitivity of the Tc of Nb3Ge to hydrogen content

W. A. Lanford, P. H. Schmidt, J. M. Rowell, J. M. Poate, R. C. Dynes, and P. D. Dernier

Appl. Phys. Lett. 32, 339 (1978); http://dx.doi.org/10.1063/1.90015 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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Sputtered Nb3Ge films are doped with hydrogen by exposing them to acid and the effects of this hydrogen are studied. The hydrogen content of these films is measured using the 15N nuclear resonance profiling method. Hydrogen incorporated at concentrations up to 1.8×1022 cm−3 (23 at.%) expands the lattice up to 2.5% and depresses the superconducting transition temperature Tc, ∼1 K per 1021 H atoms/cm3. Hydrogen is also found in as‐sputtered films, the amount increasing as the film deposition temperature is reduced.
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74.25.-q Properties of superconductors
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.15.Cd Deposition by sputtering

Low‐temperature sputter deposition of high‐Tc superconducting niobium‐germanium films

R. H. Buitrago, L. E. Toth, A. M. Goldman, J. Schwanebeck, and M. Dayan

Appl. Phys. Lett. 32, 341 (1978); http://dx.doi.org/10.1063/1.90016 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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Sputter‐deposited ’’Nb3Ge’’ films have been found to be fully superconducting at temperatures as high as 20.8 K with an onset of 21.8 K. Conditions under which high‐Tc films were formed were unique in that the highest Tc’s were obtained at deposition temperatures nearly 200 °C lower than previously reported.
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74.25.-q Properties of superconductors
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.15.Cd Deposition by sputtering
74.70.-b Superconducting materials other than cuprates

Strong magnetic relaxation of tetravalent iron ions in calcium‐doped yttrium iron garnet films

Camillo Borghese, Roberto Cosmi, Paolo De Gasperis, and Remo Tappa

Appl. Phys. Lett. 32, 344 (1978); http://dx.doi.org/10.1063/1.90017 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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Ferromagnetic resonance relaxation has been used to study a series of LPE‐grown YIG films containing calcium in increasing concentrations. The considerably large linewidths revealed that a high population of Fe4+ ions is allowed to enter the epilayers. Etching techniques and selective heat treatments provided respectively an insight on the Ca‐concentration gradients within the films and a means of confirming the identification of the relaxing ions.
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75.50.Gg Ferrimagnetics
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
66.30.Lw Diffusion of other defects
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Erratum: Infrared four‐wave mixing in liquid CO

R. E. McNair and M. B. Klein

Appl. Phys. Lett. 32, 346 (1978); http://dx.doi.org/10.1063/1.90144 (1 page) | Cited 2 times

Online Publication Date: 8 August 2008

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Abstract Unavailable
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99.10.Cd Errata
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Mv Dye lasers
28.60.+s Isotope separation and enrichment
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