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15 Mar 1978

Volume 32, Issue 6, pp. 349-395


Oriented crystal growth on amorphous substrates using artificial surface‐relief gratings

Henry I. Smith and D. C. Flanders

Appl. Phys. Lett. 32, 349 (1978); http://dx.doi.org/10.1063/1.90054 (2 pages) | Cited 45 times

Online Publication Date: 8 August 2008

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Oriented crystal growth on an amorphous substrate has been achieved using an artificially created surface‐relief grating. Crystallites of KCl grown from a water solution onto a 320‐nm spatial‐period square‐wave grating in SiO2 nucleated preferentially at vertical steps and grew with 〈100〉 directions parallel to the grating axis. It is proposed that artificially created surface microstructures may provide a new means of manipulating the growth and orientation of crystalline overlayers.
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68.55.-a Thin film structure and morphology
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Electron attachment in dilute fluorine‐helium mixtures

Kaare J. Nygaard, Scott R. Hunter, John Fletcher, and Stephen R. Foltyn

Appl. Phys. Lett. 32, 351 (1978); http://dx.doi.org/10.1063/1.90055 (3 pages) | Cited 19 times

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We have made an absolute determination of the electron attachment coefficient η (cm−1) in helium containing 0.1–1% fluorine covering an E/N range from 3Td–17Td. At an estimated average energy of 5 eV we find a rate coefficient equal to (7.5±1.5) ×10−10 cm3/sec.
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52.20.Fs Electron collisions
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.80.Gs Molecular excitation and ionization

Effect of beamlet‐beamlet interaction on ion optics of multiaperture sources

J. H. Whealton

Appl. Phys. Lett. 32, 353 (1978); http://dx.doi.org/10.1063/1.90056 (3 pages) | Cited 5 times

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Space‐charge effects of beamlet‐beamlet interaction in the unneutralized accelerator region of intense ion sources have been computed. If shielding effects of the electrodes are neglected, the radial space charge of a typical ion source is so great that most of the beam will hit the second electrode or will undergo nonlinear steering. Beam divergence will be an order of magnitude larger than that expected from considerations of spherical aberrations of a single beamlet caused by deviations from Pierce geometry. If shielding effects of the electrodes are sufficiently great that only nearest‐neighbor beamlet‐beamlet interactions are important, then the outermost beamlets (or those near a water line) will cause a total beam divergence which is the same order of magnitude as that due to single‐beamlet spherical aberrations, and far more than the divergence expected from source ion temperature. A solution to this problem is proposed.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
07.77.-n Atomic, molecular, and charged-particle sources and detectors
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative

Ionic recombination of rare‐gas molecular ions X+2 with F− in a dense gas X

M. R. Flannery and T. P. Yang

Appl. Phys. Lett. 32, 356 (1978); http://dx.doi.org/10.1063/1.90057 (2 pages) | Cited 24 times

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Rates for the recombination processes X+2+F−+X→[X2F]∗+X, (X≡He,Ne,Ar,Kr,Xe) are calculated at 300 K for pressures of the background gas X up to 50 atm. We find rates as high as (2–6) ×10−6 cm3 sec−1 for pressures of 1–8 atm as the gas is varied from Xe to He. The rates are somewhat smaller than those for the corresponding cases involving atomic ions.
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34.50.Lf Chemical reactions
34.70.+e Charge transfer

Ar2F∗ radiative lifetime measurement

C. H. Chen and M. G. Payne

Appl. Phys. Lett. 32, 358 (1978); http://dx.doi.org/10.1063/1.90058 (3 pages) | Cited 5 times

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Time‐resolved and time‐integrated spectra for Ar‐F2 mixtures excited by proton beams with various F2 pressures are obtained to determine the lifetime of Ar2F∗. The quenching rate constant of Ar2F∗ by F2 is also reported.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

High‐repetition‐rate transverse‐flow XeF laser

C. P. Wang

Appl. Phys. Lett. 32, 360 (1978); http://dx.doi.org/10.1063/1.90059 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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High‐repetition‐rate (500 pps) laser action in XeF molecules at 351 and 353 nm in a gas mixture of He, Xe, and NF3 has been demonstrated by use of a blowdown‐type fast‐flow system and thyratron‐switched high‐repetition‐rate pulse generators. The transverse‐flow velocity was 14 m/sec across a discharge region of 1×0.4×30 cm at a pressure of 650 Torr. The electric discharge pulse width was 60 nsec. For single‐shot operation, laser output energy of 6 mJ/pulse and electric efficiency of 0.25% have been obtained. For high‐repetition‐rate operation, the output energy per pulse was only 3 mJ as a result of the long charging time constant.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Hc Glow; corona
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Isotopic HCl transfer laser

C. C. Badcock, W. C. Hwang, J. F. Kalsch, and R. F. Kamada

Appl. Phys. Lett. 32, 363 (1978); http://dx.doi.org/10.1063/1.90060 (2 pages) | Cited 2 times

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An HCl laser that uses isotopic V‐V energy transfer collisions as a pumping mechanism has been demonstrated. This multiline laser, which utilized an intracavity cold gas isotope filter, increased the energy from the P1 lines of H37Cl while decreasing the energies of the P1 and P2 lines of H35Cl. Previously unreported lines, including emission from R‐branch transitions, have also been observed from single‐line HCl and HBr lasers.
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42.55.Ks Chemical lasers
34.50.Ez Rotational and vibrational energy transfer
42.79.Ci Filters, zone plates, and polarizers
42.62.-b Laser applications

Far‐infrared emission from Si‐MOSFET’s on high‐index surfaces

D C. Tsui and E. Gornik

Appl. Phys. Lett. 32, 365 (1978); http://dx.doi.org/10.1063/1.90047 (3 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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Voltage‐tunable far‐infrared emission was observed from n‐channel Si‐MOSFET’s on high‐index surfaces. The emission results from radiative decay of electronic excitations across a minigap in the ground‐state subband of the channel. We have observed emission of 10−9 W at 4.4 meV with a linewidth of ∼1 meV. Our results indicate that a voltage‐tunable monochromatic source of several times 10−7 W and tuning from ∼1 to ∼20 meV is attainable.
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73.20.-r Electron states at surfaces and interfaces
85.30.Tv Field effect devices
78.60.-b Other luminescence and radiative recombination

Generation of continuously tunable laser sidebands in the submillimeter region

D. D. Bićanić, B. F. J. Zuidberg, and A. Dymanus

Appl. Phys. Lett. 32, 367 (1978); http://dx.doi.org/10.1063/1.90048 (3 pages) | Cited 30 times

Online Publication Date: 8 August 2008

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Substantial difference‐ and sum‐frequency signals (up to 10−7 W) have been generated and reradiated by mixing the HCN laser radiation at 337 μm with that of a (tunable) millimeter‐wave klystron in a metal‐semiconductor point‐contact or Schottky barrier diode. The magnitude and degree of monochromaticity of the generated power were sufficient for high‐resolution spectroscopy as verified by measurements on H2S and CH3OH.
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42.72.-g Optical sources and standards
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.-v Laser optical systems: design and operation

Optical surface waves in periodic layered medium grown by liquid phase epitaxy

W. Ng, P. Yeh, P. C. Chen, and A. Yariv

Appl. Phys. Lett. 32, 370 (1978); http://dx.doi.org/10.1063/1.90049 (2 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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Optical surface waves propagating along the surface of a multilayer stack have been observed. The multilayer stack is grown by liquid phase epitaxy. The transverse intensity distribution measured is found to agree with our theoretical calculation.
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42.82.-m Integrated optics
68.55.-a Thin film structure and morphology
42.79.Gn Optical waveguides and couplers

Optical pulse integration and chirp reversal in degenerate four‐wave mixing

J. H. Marburger

Appl. Phys. Lett. 32, 372 (1978); http://dx.doi.org/10.1063/1.90050 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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A simple theory shows that phase modulation on a pulse may be reversed in time (e.g., positive chirp to negative) by degenerate four‐wave mixing in an optically thin nonlinear medium. In thick media, the reflected pulse field is not truly time reversed, but is proportional to the time integral of the conjugate incident field.
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42.60.Fc Modulation, tuning, and mode locking
42.50.-p Quantum optics

Diffusion lengths in amphoteric GaAs heteroface solar cells

K. L. Ashley and S. W. Beal

Appl. Phys. Lett. 32, 375 (1978); http://dx.doi.org/10.1063/1.90051 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Minority‐carrier diffusion lengths in amphoteric GaAs : Si were investigated. Electron and hole diffusion lengths in p and n type respectively were determined to be Ln=13 μm and Lp=7 μm. Preliminary efficiency measurements on heteroface structures based on amphoteric GaAs : Si p‐n junctions indicated that these devices should make excellent solar cells.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects
81.10.Fq Growth from melts; zone melting and refining

Highly efficient pGaSb‐nGa1−xAlxSb photodiodes

Tokuzo Sukegawa, Takao Hiraguchi, Akira Tanaka, and Minoru Hagino

Appl. Phys. Lett. 32, 376 (1978); http://dx.doi.org/10.1063/1.90052 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Highly efficient pGaSb‐nGa1−xAlxSb photodiodes were fabricated by liquid‐phase‐epitaxial growth of an undoped p‐type GaSb layer, followed by that of an n‐type Ga1−xAlxSb layer with a composition at x=0.7 on a p‐type (100) GaSb substrate. Spectral photocurrent response of the diodes measured at various bias voltages and room temperature was fairly flat between 1.0 and 1.7 μm. The external quantum efficiency of the photoresponse was 38% at zero bias and 54% at 1 V reverse bias in the vicinity of 1.2 μm.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology
72.40.+w Photoconduction and photovoltaic effects

Ion‐bombardment‐induced transfer of H from N to Si in amorphous Si3N4

H. J. Stein

Appl. Phys. Lett. 32, 379 (1978); http://dx.doi.org/10.1063/1.90053 (2 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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A transfer of hydrogen from nitrogen to silicon bonds in CVD silicon nitride under N+ and He+ ion bombardment is reported. The amount of H transferred is a function of the ion energy deposited in atomic processes, and the thermal stability of the transferred H is comparable to that for H retained in Si‐H bonds during deposition. H transfer is proposed to explain previously reported electrical effects of bombardment‐anneal processing of Si3N4 films, and an analogy to H passivation of Si dangling bonds in a‐Si is suggested.
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61.80.Jh Ion radiation effects
61.43.Fs Glasses
61.43.-j Disordered solids
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
81.40.Tv Optical and dielectric properties related to treatment conditions

Hydrogen and fluorine profiles in GdF3 films measured by sputter‐induced optical emission

I. S. T. Tsong and A. S. Bhalla

Appl. Phys. Lett. 32, 381 (1978); http://dx.doi.org/10.1063/1.90061 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The sputter‐induced optical emission technique has been used to study the classical problem of the exchange of fluorine and hydroxyl ions in a solid. The hydroxyl ions were measured in the form of hydrogen atoms and detected by the characteristic hydrogen emission line at 6563 Å while the fluorine atoms were detected at 6902 Å. Measurement of the optical intensities as a function of sputtering time produced the H and F depth profiles in GdF3 films.
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82.80.-d Chemical analysis and related physical methods of analysis
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
77.80.Dj Domain structure; hysteresis
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

GaAs charge‐coupled devices

I. Deyhimy, J. S. Harris, R. C. Eden, D. D. Edwall, S. J. Anderson, and L. O. Bubulac

Appl. Phys. Lett. 32, 383 (1978); http://dx.doi.org/10.1063/1.90062 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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A Schottky‐barrier‐gate buried‐channel GaAs CCD has been successfully demonstrated. A 10‐cell (30 gates) three‐phase device was operated at room temperature. The device employs a natural channel stop formed by the transfer gates extending from an n‐type active region onto a semi‐insulating GaAs substrate.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions

Characterization of silicon layers via guided wave optics

Michel Olivier and Jean‐Claude Peuzin

Appl. Phys. Lett. 32, 386 (1978); http://dx.doi.org/10.1063/1.90063 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The usefulness of guided wave optics as a tool for characterizing general purpose thin films is demonstrated in two cases of practical interest, i.e., silicon on sapphire and amorphous silicon on glass. Important results are as follows: (i) optical wave propagation at λ=1.15 μm has been observed along a few millimeters in silicon layers; (ii) silicon on sapphire layers show a very high photoelastically induced quasiuniaxial birefringence (Δn≃0.02); (iii) amorphous silicon layers exhibit a nonrectangular index profile, a high birefringence (Δn≃0.02), and finally an anomalously low value of their mean ordinary index (n≃3.04±0.01).
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75.20.Ck Nonmetals
78.20.Fm Birefringence
42.79.Gn Optical waveguides and couplers

Arsenic and gallium distribution coefficients in liquid‐phase epitaxial GaxIn1−xPyAs1−y

J.J. Coleman

Appl. Phys. Lett. 32, 388 (1978); http://dx.doi.org/10.1063/1.90064 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Data are presented on liquid‐phase epitaxial (LPE) GaxIn1−xPyAs1−y in the composition range (0.5<y<0.9) grown on InP substrates which indicate the nature of the compositional dependence of As and Ga distribution coefficients. The distribution coefficient functions when extrapolated to lattice‐matched compositional limits (y=0,1) are consistent with published data on those limits.
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68.55.-a Thin film structure and morphology
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
81.10.Dn Growth from solutions
64.75.-g Phase equilibria

Simplified fabrication of GaAs homojunction solar cells with increased conversion efficiencies

John C. C. Fan, Carl O. Bozler, and Ralph L. Chapman

Appl. Phys. Lett. 32, 390 (1978); http://dx.doi.org/10.1063/1.90065 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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Conversion efficiencies as high as 20% of AM1 have been obtained for single‐crystal GaAs shallow‐homojunction solar cells without Ga1−xAlxAs layers. These cells, which are fabricated by a simplified technique that does not require any vacuum processing steps, utilize an n+/p/p+ structure with an antireflection coating prepared by anodic oxidation of the n+ layer.
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84.60.Jt Photoelectric conversion
81.65.-b Surface treatments

A superconducting transistor

K. E. Gray

Appl. Phys. Lett. 32, 392 (1978); http://dx.doi.org/10.1063/1.90066 (4 pages) | Cited 69 times

Online Publication Date: 8 August 2008

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A three‐film superconducting tunneling device, analogous to a semiconductor transistor is presented, including a theoretical description and experimental results showing a current gain of 4. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
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