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1 Apr 1978

Volume 32, Issue 7, pp. 399-448


Scattering of light from Rayleigh waves

C. C. Sung

Appl. Phys. Lett. 32, 399 (1978); http://dx.doi.org/10.1063/1.90082 (2 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The diffracted intensity of light scattered from surface (Rayleigh) waves is calculated by satisfying all boundary conditions to first order in the surface displacements. Comparison with existing experimental data and previous theoretical results is made, and several discrepancies are indicated. More importantly, the relative positions of the Brewster angles for the various diffracted orders appear to the reversed, experimentally, from those predicted in the present treatment.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
43.35.Pt Surface waves in solids and liquids

The significance of the distribution of hot spots on the interpretation of laser produced plasma experiments

B. Arad and S. Eliezer

Appl. Phys. Lett. 32, 401 (1978); http://dx.doi.org/10.1063/1.90083 (2 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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It is shown here that experimental results from different laser devices cannot be compared unless proper care is taken of the distributions of the hot spots.
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52.25.-b Plasma properties
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
07.05.Hd Data acquisition: hardware and software
07.05.Kf Data analysis: algorithms and implementation; data management
07.05.Rm Data presentation and visualization: algorithms and implementation
42.60.-v Laser optical systems: design and operation

Measurements of the electronic and nuclear contributions to the nonlinear refractive index of beryllium fluoride glasses

M. J. Weber, C. F. Cline, W. L. Smith, D. Milam, D. Heiman, and R. W. Hellwarth

Appl. Phys. Lett. 32, 403 (1978); http://dx.doi.org/10.1063/1.90084 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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The nonlinear refractive‐index coefficient n2 of three beryllium fluoride glasses was measured at 1064 nm using time‐resolved interferometry. The refractive‐index nonlinearity of amorphous BeF2 is the smallest reported for any solid. From Raman scattering spectra, the nuclear contribution n2 was found to be ≈20–30% of the total, a factor similar to that for oxide glasses.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Ce Glasses, quartz

Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis and P. D. Dapkus

Appl. Phys. Lett. 32, 406 (1978); http://dx.doi.org/10.1063/1.90085 (2 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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Ga(1−x)AlxAs‐GaAs double‐heterostructure mesa‐stripe‐geometry lasers that operate continuously at room temperature (23 °C) have been grown by metalorganic chemical vapor deposition (MO‐CVD). Threshold currents as low as 119 mA dc have been measured for devices with a mesa width of 14 μm and a cavity length of 380 μm.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Fi Electroluminescence
78.45.+h Stimulated emission

Active fail‐safe terminal for fiber‐optic data bus

R. A. Soref, A. R. Nelson, D. H. McMahon, W. B. Spillman, and L. E. Sheppard

Appl. Phys. Lett. 32, 408 (1978); http://dx.doi.org/10.1063/1.90086 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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A novel send/receive terminal for multimode fiber bussing has been constructed in an 85‐μm‐thick LiTaO3 plate forming a curved focusing reflector on the plate end. The low‐loss T terminal is an electro‐optic switch that requires no light source of its own. It provides maximum optical throughput in the absence of electrical excitation.
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42.81.-i Fiber optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics
78.20.Jq Electro-optical effects

GaAs‐GaAlAs injection lasers on semi‐insulating substrates using laterally diffused junctions

C. P. Lee, S. Margalit, I. Ury, and A. Yariv

Appl. Phys. Lett. 32, 410 (1978); http://dx.doi.org/10.1063/1.90087 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Collisionless production of C2(a3πu) in an intense infrared laser field

J. D. Campbell, M. H. Yu, and C. Wittig

Appl. Phys. Lett. 32, 413 (1978); http://dx.doi.org/10.1063/1.90067 (3 pages) | Cited 22 times

Online Publication Date: 8 August 2008

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It is shown that C2 is formed in the a3πu state via the ir photodissociation of selected polyatomic molecules in the absence of collisional processes.
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82.50.Hp Processes caused by visible and UV light
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
82.20.Rp State to state energy transfer
33.70.Fd Absolute and relative line and band intensities

AlGaAs‐GaAs double‐heterostructure small‐area light‐emitting diodes by molecular‐beam epitaxy

T. P. Lee, W. S. Holden, and A. Y. Cho

Appl. Phys. Lett. 32, 415 (1978); http://dx.doi.org/10.1063/1.90068 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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Small‐area high‐radiance LED’s fabricated from AlGaAs‐GaAs double‐heterostructure wafers grown by molecular beam epitaxy are reported. Both oxide‐confinement and reverse‐biased junctions were employed to confine the injection current to the small light‐emitting areas. The series resistance of the diodes was reduced by zinc diffusions into and near the active region and both the linearity and the power saturation characteristics were improved. The interfacial recombination rate was determined to be about 6.6×103 cm/sec. These results are compared with LED’s made by liquid‐phase epitaxy.
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85.60.Jb Light-emitting devices
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
68.55.-a Thin film structure and morphology

The photoinitiated impulse‐enhanced electrically excited (PIE) discharge for high‐power cw laser applications

H. J. J. Seguin, A. K. Nam, and J. Tulip

Appl. Phys. Lett. 32, 418 (1978); http://dx.doi.org/10.1063/1.90069 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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The application of high‐repetition‐rate photoionized TEA laser techniques to continuous wave CO2 lasers is described. A PIE discharge approach is shown to provide a simple and convenient method for production of uniform large‐volume high‐density plasmas, suitable for continuous high‐powered CO2 laser operation. The approach may be suitable for discharge‐pumped noble‐gas–halide lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

BOXCARS: Crossed‐beam phase‐matched CARS generation in gases

Alan C. Eckbreth

Appl. Phys. Lett. 32, 421 (1978); http://dx.doi.org/10.1063/1.90070 (3 pages) | Cited 160 times

Online Publication Date: 8 August 2008

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CARS generation from N2 has been demonstrated using a crossed‐triple‐beam phase‐matching technique. This approach can provide greater and unambiguous spatial resolution for diagnostic purposes in contrast to the conventionally employed collinear phase‐matching schemes. The technique has been dubbed BOXCARS based upon the shape of the phase‐matching diagram.
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42.65.-k Nonlinear optics
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
51.70.+f Optical and dielectric properties
07.60.-j Optical instruments and equipment

Influence of molecular dissociation and degree of ionization on rare gas–halide laser properties

William L. Nighan

Appl. Phys. Lett. 32, 424 (1978); http://dx.doi.org/10.1063/1.90071 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The influence of F2 dissociation and the accompanying increase in fractional ionization is examined for conditions typical of electron‐beam‐sustained KrF∗ lasers. It is found that for electron‐density–F2‐density ratios greater than about 10−3, rare‐gas metastable loss due to electron excitation of higher levels begins to compete significantly with metastable‐F2 reactions, thereby leading to a substantial reduction in rare gas–halide production efficiency.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.25.-b Plasma properties
34.80.Dp Atomic excitation and ionization

Ultraviolet absorption of CF3I induced by excitation of the ν1 vibrational mode at 9.6 μm

H. Pummer, J. Eggleston, W. K. Bischel, and C. K. Rhodes

Appl. Phys. Lett. 32, 427 (1978); http://dx.doi.org/10.1063/1.90072 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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The broadening of the absorption profile for photolytic production of I (2P01/2) from CF3I under conditions for which the CF3I is vibrationally excited by 9.6‐μm R‐branch lines of a CO2 laser is investigated. Broadening is observed by measuring the absorption of Kr+ ion laser lines at 3500 and 4100 Å in the vibrationally excited gas. We report ultraviolet absorption data corresponding to several infrared excitation frequencies in a pressure range of CF3I from 0.03 to 3 Torr.
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33.70.Jg Line and band widths, shapes, and shifts
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes

Bandwidth‐limited operation of a mode‐locked Brillouin parametric oscillator

B. S. Kawasaki, D. C. Johnson, Y. Fujii, and K. O. Hill

Appl. Phys. Lett. 32, 429 (1978); http://dx.doi.org/10.1063/1.90073 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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The radiation in the first Stokes component of a fiber Brillouin parametric oscillator is mode locked. The resultant pulses are stable and bandwidth limited.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.-i Fiber optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Laser modulation of electroluminescence in thin‐film ZnS : Mn devices

I. F. Chang and P. Y. Yu

Appl. Phys. Lett. 32, 432 (1978); http://dx.doi.org/10.1063/1.90074 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Large photoenhancement (by a factor of ≳100 in some devices) of electroluminescence in thin‐film ZnS : Mn devices has been observed near and above the electroluminescence threshold effects when the devices were excited with the near‐uv lines of an Ar+ laser. The intensity of the photoenhanced electroluminescence was found to have a sublinear dependence on the laser intensity, saturate, and then decrease with increased laser power.
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78.60.Fi Electroluminescence
78.55.-m Photoluminescence, properties and materials
85.60.Jb Light-emitting devices
42.60.-v Laser optical systems: design and operation

Hg0.7Cd0.3Te charge‐coupled device shift registers

R. A. Chapman, M. A. Kinch, A. Simmons, S. R. Borrello, H. B. Morris, J. S. Wrobel, and D. D. Buss

Appl. Phys. Lett. 32, 434 (1978); http://dx.doi.org/10.1063/1.90075 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Eight‐bit CCD shift registers with 10‐μm‐long electrodes have been successfully fabricated on n‐type Hg0.7Cd0.3Te and operated between temperaures of 77 and 140 K. At 77 K, a charge transfer efficiency of 0.996 was obtained under four‐phase operation between 1 and 100 kHz clock frequencies. The input signal was provided by pulsing an input gate beyond the tunnel breakdown limit during the on‐time of the phase‐one potential well. Signal was detected using a floating‐gate output followed by correlated double sampling. The size of the signal is in agreement with predictions.
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85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Instabilities in thin tunnel junctions

M. K. Konkin and J. G. Adler

Appl. Phys. Lett. 32, 436 (1978); http://dx.doi.org/10.1063/1.90076 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0–500‐meV range. This paper relates the bias at which the instability occurs to the barrier thickness.
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73.40.Gk Tunneling
74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

A high‐resolution electron microscopy study of the Si‐SiO2 interface

O. L. Krivanek, T. T. Sheng, and D. C. Tsui

Appl. Phys. Lett. 32, 437 (1978); http://dx.doi.org/10.1063/1.90077 (3 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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We have studied the Si‐SiO2 interface of a Si‐MOSFET (metal‐oxide‐semiconductor field‐effect transistor) on a (911) surface by high‐resolution electron microscopy. The interface was viewed edge‐on parallel to [011] and the Si crystal lattice was directly resolved. The image shows the interface to be smooth to within 4 Å and contains a possible indication of a transition layer (∼10 Å) of nonstoichiometric oxides.
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68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
85.30.Tv Field effect devices
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Hydrogenation and dehydrogenation of amorphous and crystalline silicon

J. I. Pankove, M. A. Lampert, and M. L. Tarng

Appl. Phys. Lett. 32, 439 (1978); http://dx.doi.org/10.1063/1.90078 (3 pages) | Cited 95 times

Online Publication Date: 8 August 2008

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The dehydrogenation of amorphous silicon leaves dangling bonds which can be rehydrogenated by exposure to atomic H, but not to undissociated H2. The hydrogenation of dangling bonds in crystalline Si was monitored via the I (V) characteristics of a p‐n junction.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Low pressure rf annealing: A new technique to remove charge centers in MIS dielectrics

T‐P. Ma and W. H‐L. Ma

Appl. Phys. Lett. 32, 441 (1978); http://dx.doi.org/10.1063/1.90079 (4 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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A new technique to effectively anneal out the fixed charge and surface states in various MIS structures is presented. It involves an rf voltage and a low‐pressure plasma environment, and employs a concept very different from the conventional thermal annealing. The experimental setup and the requirements pertinent to a successful anneal are described. Some experimental data are shown to demonstrate the effectiveness of this new technique as compared with the conventional thermal anneal. The annealing mechanism is thought to be a plasma‐assisted rf field effect aided by a moderate heating of the wafer.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.20.-r Electron states at surfaces and interfaces

Nonequilibrium response of MOS devices to linearly varying voltages

A. G. Nassibian, L. Faraone, and J. G. Simmons

Appl. Phys. Lett. 32, 444 (1978); http://dx.doi.org/10.1063/1.90080 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The non‐steady‐state I‐V response of a MOS capacitor subjected to a linear voltage ramp has been studied. The characteristic exhibits structure and is strongly temperature dependent. Furthermore, the characteristic is shown to be a consequence of bulk generation in the silicon, and the parameters of the traps involved in the process are determined.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.Hi Surface barrier, boundary, and point contact devices

An InGaAs detector for the 1.0–1.7‐μm wavelength range

K. J. Bachmann and J. L. Shay

Appl. Phys. Lett. 32, 446 (1978); http://dx.doi.org/10.1063/1.90081 (3 pages) | Cited 23 times

Online Publication Date: 8 August 2008

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We report an InGaAs/InP heterojunction detector having high quantum efficiencies in the 1.0–1.7‐μm wavelength range. Conditions for growth of the lattice‐matched composition by liquid‐phase epitaxy at various temperatures are described.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.30.Dz Phase diagrams of other materials
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