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15 Apr 1978

Volume 32, Issue 8, pp. 451-508


The core structure of extrinsic stacking faults in silicon

O. L. Krivanek and D. M. Maher

Appl. Phys. Lett. 32, 451 (1978); http://dx.doi.org/10.1063/1.90103 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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The core structure of oxidation‐induced extrinsic stacking faults in silicon has been studied by high‐resolution transmission electron microscopy. The stacking faults were viewed edge‐on in thin (011) crystals so that two sets of (111) lattice planes were imaged simultaneously. The images confirm the stacking sequence A‖aCcB‖b (vertical bars denote twinning planes) that was predicted by Hornstra for the stacking‐fault core.
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61.72.Nn Stacking faults and other planar or extended defects
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.05.J- Electron diffraction and scattering

Low‐temperature behavior of pyroelectric glasses

P. J. Grout, N. H. March, and Y. Ohmura

Appl. Phys. Lett. 32, 453 (1978); http://dx.doi.org/10.1063/1.90104 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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For pyroelectric glasses, the nonapplicability of the Third Law of Thermodynamics is shown to imply that the pyroelectric coefficient p (T) remains nonzero as the temperature T tends to zero. The ratio, p/C, C being the specific heat, is also shown to be proportional to T−1 in the low‐temperature limit.
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77.70.+a Pyroelectric and electrocaloric effects
65.20.-w Thermal properties of liquids
65.40.gd Entropy

Experimental ferroelectric domain wall motion devices

J. M. Geary

Appl. Phys. Lett. 32, 455 (1978); http://dx.doi.org/10.1063/1.90105 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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A new class of devices employing the controlled motion of individual domain walls in a ferroelectric single crystal is outlined. Unlike older ferroelectric devices, these devices make no use of any coercive threshold. A working prototype device capable of logic and pulse amplification is presented. An analog readout device is described which is capable of repeatedly generating a fixed waveform of substantial complexity and length. An experimental device of this kind and its resulting waveforms are presented. Other devices including shift register memories and optical area scanners are briefly mentioned.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.Dj Domain structure; hysteresis
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors

Plasma production experiments using a pulsed HF laser

P. E. Dyer, J. A. Sayers, and G. Salvetti

Appl. Phys. Lett. 32, 457 (1978); http://dx.doi.org/10.1063/1.90106 (4 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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A high radiance unstable resonator HF laser (λ=2.8 μm) has been used to produce plasmas from Al and C targets in a vacuum. Measurements of the plasma properties at irradiance levels up to 7×1010 W cm−2 have been made using a range of diagnostic techniques (x‐ray detectors, charge probes, streak photography, and plasma reflection).
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.-m Plasma diagnostic techniques and instrumentation
52.25.Kn Thermodynamics of plasmas

Diffusion in a Pd‐Cu‐Si metallic glass

H. S. Chen, L. C. Kimerling, J. M. Poate, and W. L. Brown

Appl. Phys. Lett. 32, 461 (1978); http://dx.doi.org/10.1063/1.90107 (3 pages) | Cited 74 times

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The diffusivities (D) of a Pd77.5Cu6Si16.5 glass above the glass transition agree within a factor of 3 with diffusivities (Dη) evaluated from viscosity data using the Stokes‐Einstein relationship. Below the glass transition, however, the measured D is critically related to the state of structure and can be many orders of magnitude higher than Dη. The time constant for structural relaxation is suggested to be at least three orders of magnitude longer than that for diffusion processes.
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66.10.C- Diffusion and thermal diffusion
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation

G. K. Celler, J. M. Poate, and L. C. Kimerling

Appl. Phys. Lett. 32, 464 (1978); http://dx.doi.org/10.1063/1.90109 (3 pages) | Cited 112 times

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We demonstrate the unique capability of a repetitively pulsed laser to ’’write’’ a monocrystalline pattern in ion‐implanted amorphous silicon layers. Ion‐channeling data, from the samples scanned with a focused beam of a Q‐switched Nd : YAG laser, show a continuity of the single‐crystal layer produced with spatially overlapping laser pulses, at 60–80 MW cm−2. Scattering yields indicate very high substitutionality of the implanted ions and an interdependence between the laser power density and the depth redistribution of the implants. Finally, similar recrystallization was obtained with a CO2 laser at 10.6 μm.
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79.20.Ds Laser-beam impact phenomena
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
61.80.Jh Ion radiation effects
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Effects of ion implantation on the structure of amorphous germanium

J. F. Graczyk and P. Chaudhari

Appl. Phys. Lett. 32, 466 (1978); http://dx.doi.org/10.1063/1.90110 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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We have investigated the structure of amorphous Ge films with 10‐keV Ge74 ions. An analysis and subsequent comparison of the elastically scattered electron intensity from ion‐implanted amorphous films with relaxed and unrelaxed model calculations using the Polk random network model suggests that ion implantation introduces isolated point defects (vacancies) in the network.
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61.80.Jh Ion radiation effects
61.72.jd Vacancies
61.72.jj Interstitials
61.05.J- Electron diffraction and scattering
81.05.Kf Glasses (including metallic glasses)

An electronic transition chemical laser

W. E. McDermott, N. R. Pchelkin, D. J. Benard, and R. R. Bousek

Appl. Phys. Lett. 32, 469 (1978); http://dx.doi.org/10.1063/1.90088 (2 pages) | Cited 202 times

Online Publication Date: 8 August 2008

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cw laser action was achieved on the 2P1/2→2P3/2 transition of the iodine atom by energy transfer from the 1Δ metastable state of O2. The excited oxygen was generated chemically by flowing chlorine gas through a basic solution of 90% H2O2. The effluent from the oxygen generator was mixed with molecular iodine at the entrance of a longitudinal flow laser cavity where the I2 was dissociated by a small amount of O2(1Σ) that was present in the flow due to energy pooling processes. The measured output power was greater than 4 mW.
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42.55.Ks Chemical lasers
78.60.Ps Chemiluminescence
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

Buried heterojunction electroabsorption modulator

J. C. Campbell, J. C. DeWinter, M. A. Pollack, and R. E. Nahory

Appl. Phys. Lett. 32, 471 (1978); http://dx.doi.org/10.1063/1.90089 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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We describe the successful operation of a buried heterojunction electroabsorption modulator. This modulator, fabricated from AlyGa1−yAs1−xSbx/GaAs1−x′Sb@qL x′, is particularly well suited for use with narrow spectral width sources such as the Nd : YAG fiber lasers. The GaAs1−x′Sbx′ crystal composition can be adjusted to permit operation in the wavelength range 0.9–1.2 μm. At 1.06 μm we have obtained an extinction ratio of 13 dB and a projected insertion loss of 4.0 dB. The low device capacitance permits operation at greater than 900 MHz.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
78.20.Jq Electro-optical effects

Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis and P. D. Dapkus

Appl. Phys. Lett. 32, 473 (1978); http://dx.doi.org/10.1063/1.90090 (3 pages) | Cited 31 times

Online Publication Date: 8 August 2008

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Room‐temperature Ga(1−x)AlxAs‐GaAs DH lasers with very low threshold current densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices have been fabricated with thresholds lower than the best values reported for comparable devices grown by liquid‐phase epitaxy. The lowest threshold achieved is 590 A/cm2 for a laser with an active layer thickness of d=1100 Å and Ga(1−x)AlxAs confinement layers with x∼0.50.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.45.+h Stimulated emission

Generation of tunable radiation below 2000 Å by phase‐matched sum‐frequency mixing in KB5O8⋅4D2O

J. A. Paisner, M. L. Spaeth, D. C. Gerstenberger, and I. W. Ruderman

Appl. Phys. Lett. 32, 476 (1978); http://dx.doi.org/10.1063/1.90091 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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We have investigated second harmonic generation (SHG) and sum‐frequency mixing (SFG) in deuterated potassium pentaborate using N2 laser pumped dye lasers. The crystal 90° second harmonic generates at 2161.5 Å with a power conversion efficiency of 5% at an input power of 15 kW. Tunable phase‐matched VUV SFG is observed from 2161.5 to 1962.4 Å. Transmission and birefringence measurements indicate that the crystal can phase match with high conversion efficiencies to below 1700 Å.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.62.-b Laser applications
42.72.-g Optical sources and standards
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

High‐energy lasing of XeBr in an electric discharge

Robert C. Sze and Peter B. Scott

Appl. Phys. Lett. 32, 479 (1978); http://dx.doi.org/10.1063/1.90092 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Using an electric discharge as the excitation source we have overcome the problem of Xe+2 absorption and have observed lasing at 282 nm in XeBr at the 60‐mJ/pulse level. HBr is used as the halogen donor. Simultaneous laser oscillation at 291 nm in Br2 has also been observed. The present laser, however, has materials compatibility problems causing short static‐fill lifetimes.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.50.-j Fluorescence and phosphorescence; radiationless transitions, quenching (intersystem crossing, internal conversion)

Grating reflector for a thin‐film Fabry‐Perot laser

T. Y. Hsu and H. S. Tuan

Appl. Phys. Lett. 32, 481 (1978); http://dx.doi.org/10.1063/1.90093 (3 pages)

Online Publication Date: 8 August 2008

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The reflection‐ and radiation‐loss characteristics of a periodic grating reflector array for a thin‐film Fabry‐Perot laser are treated using a perturbation approach combined with the coupled mode theory. The present treatment derives the array properties directly in terms of the grating geometry and material constants of the thin‐film guide. It also provides quantitative information on the reflection coefficient and reflector power loss resulting from mode conversion into radiation.
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42.60.Fc Modulation, tuning, and mode locking
42.82.-m Integrated optics
42.79.Dj Gratings

Fluorescence yields of metal halide vapors excited by photodissociation

Jakob Maya

Appl. Phys. Lett. 32, 484 (1978); http://dx.doi.org/10.1063/1.90094 (3 pages) | Cited 22 times

Online Publication Date: 8 August 2008

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We have measured the absolute quantum efficiency (photon ratio) of atomic and/or molecular fluorescence owing to excitation by photodissociation at 205 nm (FWHM=15 nm) in a number of metal halide vapors. The measurements were done at pressures of about 0.1 Torr. The results are TlI=0.42, InI=0.20, HgI2=0.09, HgBr2=0.26, ZnI2=0.14, and CdI2=0.09. We believe these to be the first measurements of fluorescence yields in the metal halide vapors.
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82.50.-m Photochemistry
82.50.Hp Processes caused by visible and UV light
33.80.Gj Diffuse spectra; predissociation, photodissociation

GaInAsP/InP avalanche photodiodes

C. E. Hurwitz and J. J. Hsieh

Appl. Phys. Lett. 32, 487 (1978); http://dx.doi.org/10.1063/1.90095 (3 pages) | Cited 56 times

Online Publication Date: 8 August 2008

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Avalanche photodiodes for detection at 0.9–1.2 μm have been successfully fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in excess of 12, rise times of 150 psec or less, and low‐bias quantum efficiencies of 45% have been measured.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology

Anomalous temperature dependence observed on the photovoltage of Se‐based amorphous thin film–SnO2 heterostructures

Tran Tri Nang, Masahiro Okuda, Tatsuhiko Matsushita, and Akio Suzuki

Appl. Phys. Lett. 32, 489 (1978); http://dx.doi.org/10.1063/1.90096 (2 pages)

Online Publication Date: 8 August 2008

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The temperature dependence of the photovoltage of Se‐based amorphous thin film–SnO2 heterostructures has been studied over a temperature range of 77–393 °K. An anomalous temperature dependence of the photovoltage was observed, i.e., for a constant light intensity, the photovoltage initially increases with increasing temperature, reaches a maximum value at some temperature, and therefore decreases with further increase in temperature.
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72.40.+w Photoconduction and photovoltaic effects
71.23.-k Electronic structure of disordered solids
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.60.Jt Photoelectric conversion

Molecular beam epitaxial writing of patterned GaAs epilayer structures

W. T. Tsang and A. Y. Cho

Appl. Phys. Lett. 32, 491 (1978); http://dx.doi.org/10.1063/1.90097 (3 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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A technique for achieving molecular beam epitaxial writing of patterned GaAs epilayer structures is described. With this technique, patterned GaAs epilayer structures with controlled thickness profiles, lengthwise varying thickness, featureless and optically smooth sidewalls, and a linewidth as narrow as 10 μm were written. This technique also allows for the first time controlled variation of chemical compositions in the epilayer structure written in a lengthwise direction in the plane of the epilayer.
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42.82.-m Integrated optics
68.55.-a Thin film structure and morphology
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

A microwave InP/SiO2 MISFET

L. Messick, D. L. Lile, and A. R. Clawson

Appl. Phys. Lett. 32, 494 (1978); http://dx.doi.org/10.1063/1.90098 (2 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Microwave power gain of insulated gate field‐effect transistors (FET’s) fabricated with 4‐μm gate lengths on n‐type InP is reported. The gain is comparable to that of GaAs Schottky gate devices of identical geometry.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.40.Lj Microwave integrated electronics
68.55.-a Thin film structure and morphology

High‐efficiency organic solar cells

D. L. Morel, A. K. Ghosh, T. Feng, E. L. Stogryn, P. E. Purwin, R. F. Shaw, and C. Fishman

Appl. Phys. Lett. 32, 495 (1978); http://dx.doi.org/10.1063/1.90099 (3 pages) | Cited 70 times

Online Publication Date: 8 August 2008

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Organic solar cells based on merocyanine dyes have exhibited sunlight efficiencies in excess of 1% at ∼100 mW/cm2. This represents a significant improvement over previously reported values and brings such devices into the realm of practicality. The devices exhibit Voc’s as high as 1.2 V but are presently limited by field‐dependent energy‐dependent quantum efficiency. Though monochromatic efficiencies approaching 100% occur at high photon energies, these diminish to ∼35% at the main absorption peak in the visible. Based upon sunlight absorption, theoretical efficiencies for these devices appear high.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

The growth of GaxIn1−xAs on (100) InP by liquid‐phase epitaxy

T. P. Pearsall, R. Bisaro, R. Ansel, and P. Merenda

Appl. Phys. Lett. 32, 497 (1978); http://dx.doi.org/10.1063/1.90100 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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We have grown a series of films of the ternary alloy GaxIn1−xAs on (100) InP near the lattice‐matched composition Ga0.47In0.53As. The results show clearly that the distribution coefficient of gallium is about 10% larger for growth on the (100) face than on the (111B) face of InP. Thus we show that the solid composition obtained in liquid‐phase epitaxy under near‐equilibrium growth conditions is strongly affected by factors other than the liquid composition and temperature.
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68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Stimulated emission of surface plasmons by electron tunneling in metal‐barrier‐metal structures

D. P. Siu and T. K. Gustafson

Appl. Phys. Lett. 32, 500 (1978); http://dx.doi.org/10.1063/1.90101 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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We show that correlation currents arising from the superposition of pairs of states on distinct sides of a potential barrier in metal‐barrier‐metal structures can result in inelastic tunneling through the emission of surface plasmons. Net gain of an externally excited plasmon field is possible.
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73.40.Rw Metal-insulator-metal structures
72.30.+q High-frequency effects; plasma effects
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
73.40.Gk Tunneling

Observations of anisotropic diffused layer sheet resistance in EFG silicon ribbon solar cells

H. B. Serreze, K. V. Ravi, and C. V. Hari Rao

Appl. Phys. Lett. 32, 503 (1978); http://dx.doi.org/10.1063/1.90102 (3 pages)

Online Publication Date: 8 August 2008

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Anisotropic electrical conductivity has been observed in the near‐space‐charge region of phosphorus‐diffused EFG silicon ribbon solar cells during the course of junction profiling studies using Van der Pauw sheet‐resistance measurement techniques. This anisotropy is believed due to either preferential diffusion of phosphorus down linear defect boundaries which are present in EFG silicon or to dislocation pile‐up along these boundaries.
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84.60.Jt Photoelectric conversion
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Cw Elemental semiconductors
66.30.J- Diffusion of impurities

Direct detection of the Josephson current in Nb superconducting microbridges

P. Crozat, G. Vernet, and R. Adde

Appl. Phys. Lett. 32, 506 (1978); http://dx.doi.org/10.1063/1.90108 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The detection of the ac Josephson current in Nb microbridges with dimensions larger than the coherence length but smaller than the effective penetration depth is reported at frequencies between 1.7 and 180 GHz. Precise Josephson linewidth measurements are performed as a function of dc bias and frequency and the results are compared with the existing theories.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
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