APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 May 1978

Volume 32, Issue 9, pp. 511-591

Page 1 of 2 Pages Next Page | Jump to Page

Direct measurement of the partial waves of a surface acoustic wave by means of light scattering

Dror Sarid and George I. Stegeman

Appl. Phys. Lett. 32, 511 (1978); http://dx.doi.org/10.1063/1.90137 (2 pages)

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
We report the direct measurement of each of the partial waves which constitute a surface acoustic wave propagating on a y‐z LiNbO3 crystal by means of light scattering on internal reflection. It is shown both theoretically an experimentally that each of the partial waves has a wave vector pointing in a different direction. We could account theoretically for the shape of the scattered light which is split into several components. Each component corresponds to a single partial wave.
Show PACS
43.35.Pt Surface waves in solids and liquids
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.79.Hp Optical processors, correlators, and modulators
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

A new technique for excitation of surface and shear acoustic waves on nonpiezoelectric materials

Butrus T. Khuri‐Yakub and G. S. Kino

Appl. Phys. Lett. 32, 513 (1978); http://dx.doi.org/10.1063/1.90138 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
An interdigital transducer deposited on a piezoelectric substrate has been used to excite SAW on nonpiezoelectric materials by using a fluid couplant. The piezoelectric substrate is held at an angle to the nonpiezoelectric material so as to match the tangential k vectors of the surface waves. Experiments have been carried out with a LiNbO3 piezoelectric substrate and a ceramic such as SiC or Si3N4 with a fluid couplant. At a center frequency of 100 MHz, the estimated conversion efficiency of the surface wave from the piezoelectric to the nonpiezoelectric material is −3.5 dB. The results compare favorably with a normal mode coupling theory we have developed which predicts −2.7 dB efficiency.
Show PACS
43.35.Pt Surface waves in solids and liquids
43.38.Fx Piezoelectric and ferroelectric transducers
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

A wideband SAW convolver utilizing Sezawa waves in the metal‐ZnO‐SiO2‐Si configuration

J. K. Elliott, R. L. Gunshor, R. F. Pierret, and A. R. Day

Appl. Phys. Lett. 32, 515 (1978); http://dx.doi.org/10.1063/1.90139 (2 pages) | Cited 10 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A monolithic metal‐ZnO‐SiO2‐Si SAW convolver has been developed which not only displays the advantages of the monolithic configuration, but also possesses, due to utilization of high coupling Sezawa waves, a wide bandwidth heretofore only exhibited by LiNbO3 devices. We report here a bandwidth of 30 MHz at an input frequency of 225 MHz with a terminal efficiency of −56.9 dBm. The device displays an electromechanical coupling (Δv/v) of 0.019 which is the largest value yet reported for a ZnO device.
Show PACS
72.50.+b Acoustoelectric effects
43.60.Gk Space-time signal processing, other than matched field processing
43.35.Ns Acoustical properties of thin films
81.15.Cd Deposition by sputtering

Acoustic memory correlator using GaAs Schottky diodes

H. Gautier, C. Maerfeld, and P. Tournois

Appl. Phys. Lett. 32, 517 (1978); http://dx.doi.org/10.1063/1.90140 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A memory correlator using a matrix of Pt‐GaAs Schottky diodes airgap coupled to a LiNbO3 substrate has been built. The high barrier potential of this type of junction (900 mV) leads to low diode leakage currents. As a consequence, storage time constants of up to 0.4 s have been measured at room temperature, while charging times can be as short as 10 ns. The other device characteristics are detailed, and particularly the possibility of correlating signals of several millisecond duration.
Show PACS
43.60.Qv Signal processing instrumentation, integrated systems, smart transducers, devices and architectures, displays and interfaces for acoustic systems
72.50.+b Acoustoelectric effects
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices

An acousto‐optic multichannel signal processor

John N. Lee, N. J. Berg, and B. J. Udelson

Appl. Phys. Lett. 32, 519 (1978); http://dx.doi.org/10.1063/1.90115 (3 pages)

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
The feasibility of using acousto‐optic frequency multiplexing to process several different signals simultaneously has been demonstrated. A four‐channel acousto‐optical system for correlating signals was operated successfully; each channel had a 45‐MHz bandwidth and a minimum of 45‐dB channel isolation.
Show PACS
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.20.Jq Electro-optical effects
43.60.Qv Signal processing instrumentation, integrated systems, smart transducers, devices and architectures, displays and interfaces for acoustic systems
72.50.+b Acoustoelectric effects

Studies of ion‐beam‐generation efficiency with reflex tetrodes

R. A. Mahaffey, J. A. Pasour, J. Golden, and C. A. Kapetanakos

Appl. Phys. Lett. 32, 522 (1978); http://dx.doi.org/10.1063/1.90142 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
The unidirectionality of the ion current ina reflex tetrode has a result the efficient generation of pulsed ion beams. In this paper, experimental results are reported on the dependence of the ion‐generation efficiency, in a reflex tetrode, upon the applied voltage, total current, anode‐anode and anode‐cathode separations, applied magnetic field.
Show PACS
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)
52.27.Ny Relativistic plasmas

Schottky barrier diodes for low noise mixing in the far infrared

William M. Kelly and Gerard T. Wrixon

Appl. Phys. Lett. 32, 525 (1978); http://dx.doi.org/10.1063/1.90143 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Contributions from semiconductor plasma resonance and skin effect to the series resistance of Schottky barrier diodes are incorporated in a calculation of conversion loss for the submillimeter region. The calculation includes both intrinsic and parasitic losses and shows the conversion loss to be strongly dependent upon frequency of operation and upon diode diameter. At higher frequencies mixer performance may be optimized by careful choice of epitaxial carrier concentration and of diode size.
Show PACS
73.40.Ei Rectification
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
85.30.De Semiconductor-device characterization, design, and modeling

Submillimeter‐laser‐induced air breakdown

P. Woskoboinikow, W. J. Mulligan, H. C. Praddaude, and D. R. Cohn

Appl. Phys. Lett. 32, 527 (1978); http://dx.doi.org/10.1063/1.90116 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
We report the first demonstration of laser‐induced air breakdown at submillimeter wavelengths. An optically pumped D2O oscillator‐amplifier laser system which produced 75‐ns pulses at the megawatt level on the 385‐ and 359‐μm transitions was used. Focusing the 10‐cm‐diam laser beam with a 20‐ or 38‐cm‐focal‐length mirror onto an arbitrary surface to produce initial ionization caused multiple air breakdown plasmas with a threshold on the order of 1 MW cm−2. Theoretical (ω2+ν2)/ν scaling from the ruby and the neodymium laser air breakdown thresholds, where ω is the laser angular frequency and ν is the electron‐molecule collision frequency, is in agreement with this initial experimental result.
Show PACS
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.60.By Design of specific laser systems

Reflection of resonance cone and plasma‐filled waveguide modes

A. Gonfalone

Appl. Phys. Lett. 32, 530 (1978); http://dx.doi.org/10.1063/1.90117 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
The resonance cone excited by a radio‐frequency antenna in a magnetoplasma is investigated in a large metallic plasma chamber. The large number of reflections of the resonance cone is found to be the explanation for the extensively observed and studied ’’Trivelpiece‐Gould’’ modes for a plasma‐filled waveguide. A dispersion relation is found, in close agreement with previous studies, which describes accurately the experimentally observed wavelike structures.
Show PACS
52.35.Fp Electrostatic waves and oscillations (e.g., ion-acoustic waves)
52.40.Fd Plasma interactions with antennas; plasma-filled waveguides
52.70.Gw Radio-frequency and microwave measurements

Blistering effects in argon‐bombarded silicon

K. Wittmaack and W. Wach

Appl. Phys. Lett. 32, 532 (1978); http://dx.doi.org/10.1063/1.90118 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Blistering of silicon due to argon bombardment has been observed at implantation energies above about 100 keV. Above about 200 keV rupture of blisters becomes the predominant surface damage phenomenon. Blistering effects are most obvious upon first appearance. Further bombardment causes the occurrence of new generations of blisters accompanied by oscillations in argon content of the silicon backing. The effects are interpreted in terms of argon agglomeration, build‐up of critical argon pressures, argon release from near‐surface regions, and sputtering.
Show PACS
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.U- Doping and impurity implantation

Periodic regrowth phenomena produced by laser annealing of ion‐implanted silicon

H. J. Leamy, G. A. Rozgonyi, T. T. Sheng, and G. K. Celler

Appl. Phys. Lett. 32, 535 (1978); http://dx.doi.org/10.1063/1.90119 (3 pages) | Cited 106 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
We have discovered that interference effects extant during pulsed laser irradiation annealing of ion‐implanted silicon produce periodic property variations in the annealed material that mimic the interference pattern. These are manifest at near‐annealing threshold power densities as surface ripple and at higher power densities may be revealed by etching. The surface ripple observed at low power densities is correlated with the occurrence of polycrystalline silicon regions in the annealed material. Our observations suggest that surface melting and epitaxial regrowth are responsible for the annealing effect.
Show PACS
68.55.-a Thin film structure and morphology
61.80.Jh Ion radiation effects
79.20.Ds Laser-beam impact phenomena

Surface and subsurface structure of solids by laser photoacoustic spectroscopy

Y. H. Wong, R. L. Thomas, and G. F. Hawkins

Appl. Phys. Lett. 32, 538 (1978); http://dx.doi.org/10.1063/1.90120 (2 pages) | Cited 76 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
The new technique of photoacoustic spectroscopy is applied to studies of surface and subsurface structures of solids. In the present case, special attention is focused on silicon‐nitride ceramic material, which is used for the manufacturing of turbine blades. Good correlation is obtained between the observed photoacoustic signal and surface microstructure. In addition, the photoacoustic signal shows inhomogeneities that are not visually detected under a microscope.
Show PACS
07.60.-j Optical instruments and equipment
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Infrared spectra of new acceptor levels in indium‐ or aluminum‐doped silicon

Walter Scott

Appl. Phys. Lett. 32, 540 (1978); http://dx.doi.org/10.1063/1.90121 (3 pages) | Cited 26 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Infrared absorption measurements have verified the existence of shallower acceptor levels associated with both indium and aluminum in silicon. The new spectra correspond to effective‐mass‐like acceptors with optical ionization energies of 112.8±0.3 meV in indium‐doped silicon and 56.3±0.3 meV in aluminum‐doped silicon. The existence of the shallower acceptor level in aluminum‐doped silicon has been further verified by Hall coefficient measurements.
Show PACS
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Quenching of photoconductivity in silver sulfide thin layers by ultraviolet radiation

S. Mardix and M. Chi

Appl. Phys. Lett. 32, 543 (1978); http://dx.doi.org/10.1063/1.90122 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Photoconductivity in certain thin layers of silver sulfide was found to be quenched at room temperature by a secondary exposure to ultraviolet. The photocurrent induced by the primary radiation of wavelengths longer than 600 nm is linearly dependent on the light intensity. The quenched part of the photocurrent I− was found to depend on both the primary intensity L+ and the secondary intensity L−: 1/I−=A/L++B/L−+C, where A, B, and C are constants. The possibility is mentioned that the reported effect is associated with a photographic effect induced by the ultraviolet radiation.
Show PACS
72.40.+w Photoconduction and photovoltaic effects
07.68.+m Photography, photographic instruments; xerography

Light emission from gold particles excited by electron tunneling

P. K. Hansma and H. P. Broida

Appl. Phys. Lett. 32, 545 (1978); http://dx.doi.org/10.1063/1.90123 (3 pages) | Cited 37 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
After gold particles are deposited onto an oxidized aluminum strip by the evaporation of gold in argon, tunnel junctions can be formed by making contact to the particles with a thin gold film. Red polarized light is emitted from these junctions when a few volts of potential difference is applied. Such junctions can be operated and stored at room temperature for several weeks.
Show PACS
73.40.Gk Tunneling
78.60.-b Other luminescence and radiative recombination
85.60.Jb Light-emitting devices

Algorithm for measuring the internal quantum efficiency of individual injection lasers

H. S. Sommers

Appl. Phys. Lett. 32, 547 (1978); http://dx.doi.org/10.1063/1.90124 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A new algorithm permits determination of the internal quantum efficiency ηi of individual lasers. Above threshold, the current is partitioned into a ’’coherent’’ component driving the lasing modes and the ’’noncoherent’’ remainder. Below threshold the current is known to grow as exp(qV/n0KT); the algorithm proposes that extrapolation of this equation into the lasing region measures the noncoherent remainder, enabling deduction of the coherent component and of its current derivative ηi. Measurements on five (AlGa)As double‐heterojunction lasers cut from one wafer demonstrate the power of the new method. Comparison with band calculations of Stern shows that n0 originates in carrier degeneracy.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
85.30.Kk Junction diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Quaternary alloy InxGa1−xAsyP1−y/InP photodetectors

A. R. Clawson, W. Y. Lum, G. E. McWilliams, and H. H. Wieder

Appl. Phys. Lett. 32, 549 (1978); http://dx.doi.org/10.1063/1.90125 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Acceptor‐doped heteroepitaxial In0.84Ga0.16As0.34P0.66 layers grown on donor‐doped InP substrates were used to construct self‐filtering infrared detectors with a responsivity of 0.46 A/W at a wavelength λ=1.05 μm and a corresponding external quantum efficiency ηx=0.54.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.55.-a Thin film structure and morphology

Backward Raman gain measurements for KrF laser radiation scattered by CH4

J. R. Murray, J. Goldhar, and A. Szöke

Appl. Phys. Lett. 32, 551 (1978); http://dx.doi.org/10.1063/1.90126 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Backward Raman small‐signal gain measurements for a KrF laser scattered by methane gas, including linewidth and pressure dependences, are presented. A 268‐nm probe beam is produced from a 249‐nm pump beam by superfluorescent emission in a methane cell, and is amplified by a counterpropagating KrF beam at 249 nm in a second methane cell. The results are consistent with theoretical predictions for the backward Raman amplifier.
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

On the use of photoacoustic cell for investigating the electron‐phonon interaction in semiconductors

C. C. Ghizoni, M. A. A. Siqueira, H. Vargas, and L. C. M. Miranda

Appl. Phys. Lett. 32, 554 (1978); http://dx.doi.org/10.1063/1.90127 (3 pages) | Cited 21 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
By exploring the simple periodic heat‐flow principle of the photoacoustic cell we demonstrate experimentally the usefulness of the acoustic cell for studying the transport properties of semiconductors. An interesting feature of this technique is that it allows us to separate the different sources of sound generation in a semiconductor. Specific application is made for the case of Si crystals submitted to rectangular voltage pulses.
Show PACS
72.50.+b Acoustoelectric effects
63.20.K- Phonon interactions
43.38.+n Transduction; acoustical devices for the generation and reproduction of sound

Thin‐film gallium arsenide solar cells on tungsten/graphite substrates

Shirley S. Chu, T. L. Chu, and H. T. Yang

Appl. Phys. Lett. 32, 557 (1978); http://dx.doi.org/10.1063/1.90128 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Polycrystalling gallium arsenide films deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsine have been used for the fabrication of MOS‐type solar cells. The deposited films were oxidized in situ with an argon‐oxygen mixture and, in some cases, followed by a water‐vapor treatment. Gold was used as the barrier metal, and titanium oxide was used as the antireflection coating. Large‐area (6–9 cm2) solar cells with an AM1 efficiency of about 5.5% have been produced.
Show PACS
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Electro‐optic analog‐to‐digital conversion using channel waveguide modulators

H. F. Taylor, M. J. Taylor, and P. W. Bauer

Appl. Phys. Lett. 32, 559 (1978); http://dx.doi.org/10.1063/1.90129 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Some experimental results on the operation of a lithium niobate modulator in a threshold circuit to simulate a bit channel of an analog‐to‐digital (A/D) converter are presented. Voltages required for π‐radian phase retardation were 1.2 and 3.1 V, respectively, for TE and TM excitation. The periodic dependence of modulator intensity on applied voltage is maintained for phase shifts as large as 24π radians in the TE case, which corresponds to 5.6 bits of precision for an A/D converter.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
42.30.-d Imaging and optical processing
07.05.Hd Data acquisition: hardware and software
07.05.Kf Data analysis: algorithms and implementation; data management
07.05.Rm Data presentation and visualization: algorithms and implementation

Superradiant emission from electron‐beam‐excited POPOP vapor

G. Marowsky, R. Cordray, F. K. Tittel, and W. L. Wilson

Appl. Phys. Lett. 32, 561 (1978); http://dx.doi.org/10.1063/1.90130 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
For the first time superradiant emission from an electron‐beam‐excited dye vapor has been observed. Temporal and spectral characteristics are described that confirm the presence of stimulated emission. The wavelength integrated net gain of an optimized POPOP dye vapor–buffer gas mixture is found to be 0.17 cm−1 at 1 Torr and 4 atm argon pressures for an absorbed power input of 40 MW into an active volume of 10 cm3. Under these conditions an estimate of the conversion efficiency from electronic energy to coherent light yields 5%. These results suggest that an efficient tunable electronically pumped dye vapor laser system is feasible.
Show PACS
42.55.Mv Dye lasers

1‐mJ line‐tunable optically pumped 16 μm laser

R. M. Osgood

Appl. Phys. Lett. 32, 564 (1978); http://dx.doi.org/10.1063/1.90131 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A optically pumped CO2 laser, which is excited by a 100‐mJ HBr laser, produces 1 mJ of multiline energy per pulse. Extensive stepwise tuning is accomplished by means of an intracavity grating and by using various isotopic forms of CO2. A technique which enables measurement of the CO2 (0110) relaxation time by HBr is described.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Be Level crossing and optical pumping
42.72.-g Optical sources and standards

Photoluminescence in the amorphous system SixC1−x

D. Engemann, R. Fischer, and J. Knecht

Appl. Phys. Lett. 32, 567 (1978); http://dx.doi.org/10.1063/1.90132 (2 pages) | Cited 40 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
We report the observation of visible photoluminescence in the amorphous SixC1−x(H) alloy system. The spectrum consists of two bands one of which shifts linearly with x. For x=0.4 the principle luminescence maximum lies at 2.1 eV.
Show PACS
78.40.Fy Semiconductors
71.23.-k Electronic structure of disordered solids
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Long‐pulse ultraviolet laser emission in an electron‐beam‐excited supersonic flow

B. Forestier and B. Fontaine

Appl. Phys. Lett. 32, 569 (1978); http://dx.doi.org/10.1063/1.90133 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Long‐pulse laser action has been achieved at several wavelengths near 350 nm in an electron‐beam‐excited supersonic flow. Laser emission on XeF has been obtained when Ne/Xe/NF3 mixtures aerodynamically cooled to 120 K and at a pressure of 0.45 atm were excited by an electron beam of medium intensity. About 1 mJ of laser energy was obtained in a 400‐ns FWHM pulse, limited only by the electron‐beam pulse length. Lasing was also achieved on two ultraviolet lines in Ne/NF3 mixtures cooled down to 80 K.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
47.40.Ki Supersonic and hypersonic flows
33.20.Lg Ultraviolet spectra
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close