APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

1 May 1978

Volume 32, Issue 9, pp. 511-591

Page 2 of 2 Pages Previous Page | Jump to Page

Solid solubility of selenium in GaAs as measured by secondary ion mass spectrometry

A. Lidow, J. F. Gibbons, V. R. Deline, and C. A. Evans

Appl. Phys. Lett. 32, 572 (1978); http://dx.doi.org/10.1063/1.90134 (2 pages) | Cited 11 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Secondary ion mass spectrometry profiles of redistributed selenium ion‐implanted GaAs samples have been used to determine the solid solubility limit (Css) for this impurity. The data are well approximated by Css=9.5×1023 exp(−1.23±0.02eV/kT) cm−3. It is also shown that carrier concentrations equivalent to this limit can be obtained for annealing temperatures up to 900 °C.
Show PACS
64.75.-g Phase equilibria
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Metastable silicon–transition‐metal films as temperature‐independent resistors

M. M. Collver

Appl. Phys. Lett. 32, 574 (1978); http://dx.doi.org/10.1063/1.90135 (2 pages) | Cited 3 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
The transition from semiconductor to metallic type behavior of the conductivity in crystalline metastable silicon–transition‐metal films has been observed at transition‐metal concentrations less than 15 at.%. The stability of these films makes them useful as temperature‐independent resistors.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

On‐time determination of the composition of III‐V ternary layers during VPE growth

J. B. Theeten, F. Hottier, and J. Hallais

Appl. Phys. Lett. 32, 576 (1978); http://dx.doi.org/10.1063/1.90136 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A fast automatic ellipsometer has been used for determining the composition (and the rate of growth in favorable cases) of III‐V ternary compound semiconductor layers during their growth in a VPE reactor. The technique is demonstrated on Ga1−xAlxAs and GaAs1−xPx layers grown respectively in an organometallic and a chloride system. The elllipsometric angle ψ is shown to be directly related to the composition and the rate of growth of the layer. The ellipsometric angle Δ contains additional information on the growth mechanisms at the surface of the layer.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
75.20.Ck Nonmetals

Ion‐implanted n‐channel InP metal semiconductor field‐effect transistor

K. R. Gleason, H. B. Dietrich, R. L. Henry, E. D. Cohen, and M. L. Bark

Appl. Phys. Lett. 32, 578 (1978); http://dx.doi.org/10.1063/1.90141 (4 pages) | Cited 11 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Device‐quality n‐type layers have been produced by ion implantation in Fe‐doped semi‐insulating InP. 29Si has been used as the dopant and anneals were carried out with the aid of a multiple‐layered encapsulant consisting of plasma‐deposited Si3N4 and pyrolytic P‐doped SiO2. These layers have been used to make n‐channel MESFET’s for which gains of 13.7 and 9.8 dB were measured at 8 and 10 GHz, respectively. The gate metallization for these devices was Au. Low‐leakage currents and adequate gate breakdown characteristics were observed.
Show PACS
85.30.Hi Surface barrier, boundary, and point contact devices
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects

Transition temperature and upper critical field of superconducting V‐Al/Cu‐Ge composite tapes

H. Sekine, K. Togano, and K. Tachikawa

Appl. Phys. Lett. 32, 582 (1978); http://dx.doi.org/10.1063/1.90111 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Transition temperature Tc and upper critical field Hc2 were measured for the superconducting composite tapes made by the reaction between a V‐Al core and a Cu‐Ge matrix. It was found that Tc and Hc2, especially the latter, are significantly increased with increasing aluminum concentration in the vanadium core, reaching 12 K and 170 kOe (at 4.2 K) for the V–18 at.% Al/Cu–9 at.% Ge specimen. This enhancement appears to result from the formation of a V3(Ge,Al) ternary A‐15 compound layer.
Show PACS
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors

Ge‐Sn barrier Josephson tunnel junctions

E. L. Hu, L. D. Jackel, A. R. Strnad, R. W. Epworth, R. F. Lucey, C. A. Zogg, and E. Gornik

Appl. Phys. Lett. 32, 584 (1978); http://dx.doi.org/10.1063/1.90112 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
A new form of superconducting Josephson tunnel junction has been developed in which superconducting electrons tunnel through thick (∼600 Å) barriers formed by evaporated Ge‐Sn mixtures. By varying barrier composition and thickness a wide range of junction I‐V characteristics can be obtained. For thick barriers, or barriers with low Sn content, high tunneling resistances and no supercurrent result. Barriers of intermediate thickness or with moderate Sn content yield junctions with electrical properties very similar to conventional hysteretic oxide‐barrier junctions. Thin, or high Sn content barriers, give junctions with nonhysteretic I‐V characteristics similar to those expected for an ideal superconducting microbridge. The nonhysteretic junctions could be used in nonlatching Josephson logic circuits. In addition, the nonhysteretic junctions show excellent microwave response, and may be useful for millimeter‐wave mixing and detection.
Show PACS
74.50.+r Tunneling phenomena; Josephson effects
73.40.Sx Metal-semiconductor-metal structures
85.25.-j Superconducting devices

Exact solutions of the sine‐Gordon equation describing oscillations in a long (but finite) Josephson junction

G. Costabile, R. D. Parmentier, B. Savo, D. W. McLaughlin, and A. C. Scott

Appl. Phys. Lett. 32, 587 (1978); http://dx.doi.org/10.1063/1.90113 (3 pages) | Cited 49 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
Readily evaluated exact solutions of the sine‐Gordon equation are presented for nonlinear standing‐wave oscillations on a fixed length of a lossless Josephson transmission line with open‐circuit boundary conditions at the ends. Three distinct species of standing waves are described: (i) plasma oscillation, (ii) breather oscillation, and (iii) fluxon oscillation. Fluxon oscillations can absorb power from an external source of bias current; for this case the volt‐ampere characteristics relating bias current to average junction have been computed.
Show PACS
74.25.N- Response to electromagnetic fields
85.25.-j Superconducting devices
74.50.+r Tunneling phenomena; Josephson effects

Oscillation phenomenon in ThO2‐doped SnO2 exposed to CO gas

Masayoshi Nitta, Shinji Kanefusa, Yoshiaki Taketa, and Miyoshi Haradome

Appl. Phys. Lett. 32, 590 (1978); http://dx.doi.org/10.1063/1.90114 (2 pages) | Cited 18 times

Online Publication Date: 8 August 2008

Full Text: | Download PDF

Show Abstract
In the ThO2‐doped SnO2 a new self‐oscillation phenomenon has been found only when it is exposed to CO gas. This phenomenon is related to the environmental CO gas concentration, substrate temperature, and applied voltage. The oscillation is extremely senstivie to the concentration of CO gas, especially in the region of 0.2‐0.3%.
Show PACS
72.20.-i Conductivity phenomena in semiconductors and insulators
72.80.Jc Other crystalline inorganic semiconductors
68.45.-w
81.40.Rs Electrical and magnetic properties related to treatment conditions
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close