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15 Dec 1978

Volume 33, Issue 12, pp. 979-1035


Attenuation and phase velocity of surface acoustic waves interacting with charge carriers in thin metal films

E. Harnik and E. Sader

Appl. Phys. Lett. 33, 979 (1978); http://dx.doi.org/10.1063/1.90259 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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A simple method for the simultaneous measurement of attenuation and phase‐velocity changes of surface acoustic waves, based on the use of a surface‐acoustic‐wave oscillator, is described. The application of the method is illustrated in the case of surface acoustic waves interacting with charge carriers in thin gold fims vapor deposited on the lithium niobate substrate supporting the surface waves. Good agreement is obtained between experimental results and theory. It is shown that the product of carrier mobility and Fermi energy can be determined with good accuracy independently from three different relations involving attenuation, phase velocity, and resistivity data.
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43.35.Pt Surface waves in solids and liquids
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
73.61.At Metal and metallic alloys

Measurement of SAW attenuation on metals

J. H. Wakefield and J. Liesegang

Appl. Phys. Lett. 33, 981 (1978); http://dx.doi.org/10.1063/1.90260 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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The attenuation coefficients κ and wave speeds vs have been measured for SAW (surface acoustic waves) ∼5 MHz propagating on several polished flat polycrystalline metal surfaces. Laser interferometry techniques were used to measure standing‐wave coefficients in such a way as to relate conveniently to a determination of both κ and vs.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Pt Surface waves in solids and liquids

Runaway‐electron model for x‐ray emission in pinched discharges

Gregory Benford

Appl. Phys. Lett. 33, 983 (1978); http://dx.doi.org/10.1063/1.90261 (2 pages) | Cited 3 times

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We consider a simple model in which a small fraction of runaway electrons produce the often‐observed x‐ray emission in pinches. We show the turbulent collision frequency scales as v−3, from fairly general arguments. Simple scalings result, linking the number of runaways with their energy. Fitting to a recent experiment gives a pinch field exceeding the applied field by ∼400. Future experiments can check the scaling without knowing the pinch electric field.
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52.80.-s Electric discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Laser heating and magnetic compression of plasma in a fast solenoid

H. W. Hoida and G. C. Vlases

Appl. Phys. Lett. 33, 984 (1978); http://dx.doi.org/10.1063/1.90262 (4 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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A low‐β plasma column a few mm in diameter by 22 cm in length is heated by an axially directed CO2 laser to a high‐β state in a fast rising solenoidal field. Successful heating depends on proper timing between the laser pulse and rising field. Typical conditions attained are a line energy density of 6 J/cm, T≈40 eV, and ne≈3×1017e−/cm3, with conditions quite uniform along the length. The heating suppresses instabilities which appear under certain conditions in the non‐laser‐heated case.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Turbulent flow measurement in the vicinity of a cation‐selective membrane utilizing the Doppler shift of scattered laser radiation

S. Reich

Appl. Phys. Lett. 33, 988 (1978); http://dx.doi.org/10.1063/1.90263 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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An anemometric method to measure the velocity of fluid flow in the vicinity of a cation‐selective membrane is described. It is shown that the turbulent phenomenon which develops on the depletion side of the membrane, beyond the critical current density point, is confined to a space region of ≃130 μm from the membrane surface; this turbulence is strongly coupled to the dissipation process of electric energy in the depletion region.
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47.80.-v Instrumentation and measurement methods in fluid dynamics
87.16.D- Membranes, bilayers, and vesicles
42.62.-b Laser applications
47.27.Sd Turbulence generated noise

Stabilization of semiconductor laser outputs by a mirror close to a laser facet

N. Chinone, K. Aiki, and R. Ito

Appl. Phys. Lett. 33, 990 (1978); http://dx.doi.org/10.1063/1.90264 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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Fluctuations of semiconductor laser outputs such as transient relaxation oscillations, external‐mirror‐induced fluctuations, or degradation‐induced self‐sustained pulsations are suppressed by placing a mirror close to a laser facet. The mirror‐to‐laser distances are 0.3–2.0 cm for effectively suppressing the fluctuations.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Spatially resolved photoluminescence characterization and optically induced degradation of In1−xGaxAsyP1−y DH laser material

W. D. Johnston, G. Y. Epps, R. E. Nahory, and M. A. Pollack

Appl. Phys. Lett. 33, 992 (1978); http://dx.doi.org/10.1063/1.90265 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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We have observed growth‐ and processing‐related defects and optically induced degradation in In1−xGaxAsyP1−y double‐heterostructure material intended for 1.2–1.3‐μm laser diodes. Threshold for the degradation observed decreases with increasing layer thickness, suggesting a relation to strain arising from compositional variation during growth.
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78.40.Fy Semiconductors
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

ac electroluminescence in thin‐film ZnSe : Mn

Jagdeep Shah and A. E. DiGiovanni

Appl. Phys. Lett. 33, 995 (1978); http://dx.doi.org/10.1063/1.90266 (2 pages) | Cited 13 times

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ac electroluminescence from thin films of Mn‐doped ZnSe, sandwiched between two insulating films, shows a hysteresis in light output versus applied voltage, similar to that observed in ZnS : Mn. We also find that the threshold voltage for light emission is approximately a factor of 2 smaller for ZnSe structures than for similarly prepared ZnS structures of identical dimensions.
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78.60.Fi Electroluminescence
75.20.Ck Nonmetals

Properties of optical waveguides formed by thermal migration of thallium ions in glass

M. Hafich, D. Chen, and J. Huber

Appl. Phys. Lett. 33, 997 (1978); http://dx.doi.org/10.1063/1.90267 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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A simple process is presented for fabricating channel waveguides by a thallium‐ion diffusion technique. The thallium diffusion coefficient is estimated to be 2×10−12 cm2/sec at 400 °C. Effective mode index measurements show a complementary error function index profile in the waveguide. Waveguide losses are measured to be −0.60 dB/cm. A passive component of optical communications systems, a star coupler, is fabricated using the thallium‐ion exchange process.
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42.79.Gn Optical waveguides and couplers
66.30.J- Diffusion of impurities
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Absolute photon yields in the sputter‐induced optical emission process

I. S. T. Tsong and N. A. Yusuf

Appl. Phys. Lett. 33, 999 (1978); http://dx.doi.org/10.1063/1.90268 (4 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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The absolute photon yield expressed as the number of photons emitted at a particular wavelength per sputtered atom has been measured for 34 elements in NBS standard glass targets bombarded by 20‐keV Ar+ ions. The yield values lie in the range 10−2–10−6. The detection limits for these elements in parts per million by weight have also been estimated for given bombardment conditions.
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32.30.-r Atomic spectra
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects

Proposed generation of picosecond second‐harmonic pulses in Te

L. M. Johnson and G. W. Pratt

Appl. Phys. Lett. 33, 1002 (1978); http://dx.doi.org/10.1063/1.90247 (3 pages)

Online Publication Date: 8 August 2008

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The possibility of generating extremely intense picosecond pulses at 5.3 μm by frequency doubling a strong CO2 laser pulse in Te is demonstrated. It is shown that free carriers generated by two‐photon absorption at the leading edge of the second harmonic perturb the indices of refraction and greatly reduce the conversion efficiency for the remainder of the pump pulse.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Tunable optical gain in the near uv using F+ centers in CaO

J. Duran, P. Evesque, and M. Billardon

Appl. Phys. Lett. 33, 1004 (1978); http://dx.doi.org/10.1063/1.90248 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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A tunable amplification around 3600 Å has been demonstrated at low temperatures in the low‐energy side of the emission band of CaO crystals doped with F+ centers. The pumping power was delivered by a pulsed nitrogen laser and the optical gain was measured in a coaxial configuration. The observed amplification fits the equations of the pumping cycle for this system reasonably well. The possibility of designing a tunable laser using this material is discussed in light of our experiments.
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78.45.+h Stimulated emission
61.72.jn Color centers
42.55.Rz Doped-insulator lasers and other solid state lasers
71.55.Ht Other nonmetals

Saturation parameter and small‐signal gain of cw CO2 and/or N2O mixing gasdynamic lasers

J. Milewski, M. Brunné, B. Polanowski, J. Stańco, A. Yu. Volkov, A. I. Demin, and E. M. Kudriavtsev

Appl. Phys. Lett. 33, 1007 (1978); http://dx.doi.org/10.1063/1.90249 (3 pages)

Online Publication Date: 8 August 2008

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The small‐signal gain of cw CO2 and/or N2O mixing gasdynamic lasers has been measured by varying the cavity losses with the aid of two rotating coupled NaCl plates placed within the cavity and looking for the generation cutoff point. The saturation parameter has been determined on the basis of measured values of respective small‐signal gains by experimentally recovering the output power‐cavity losses relation. The measurements yielded α0≃1.1 m−1 and Is≃3.2 kW/cm2 for CO2, and α0≃1.0 m−1 and Is≃3.0 kW/cm2 for a cw N2O mixing gasdynamic laser.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Effect of grain boundaries in silicon on minority‐carrier diffusion length and solar‐cell efficiency

T. Daud, K. M. Koliwad, and F. G. Allen

Appl. Phys. Lett. 33, 1009 (1978); http://dx.doi.org/10.1063/1.90250 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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The spatial variation of minority‐carrier diffusion length in the vicinity of a grain boundary for a polycrystalline silicon sheet has been measured by the use of the EBIC technique. The effect of such a variation on solar‐cell output has then been computed as a function of grain size. Calculations show that the cell output drops considerably for grain size smaller than three times the bulk diffusion length.
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61.72.Mm Grain and twin boundaries
84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Catastrophic degradation of GaAlAs DH laser diodes

H. Imai, M. Morimoto, H. Sudo, T. Fujiwara, and M. Takusagawa

Appl. Phys. Lett. 33, 1011 (1978); http://dx.doi.org/10.1063/1.90251 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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The catastrophic degradation of GaAlAs DH laser diodes is examined with the application of pulsed or dc current. The dependence of the pulsewidth on the degradation is measured using samples with or without facet coating. The light output PD at which the catastrophic degradation occurs decreases with an increase in the pulsewidth in the pulsewidth range 100 nsec to 10–50 μsec, and PD is constant over the pulsewidth of 10–50 μsec. The sample with an Al2O3 film coating has the highest PD. Photoluminescence patterns of the active layer in degraded samples both with and without facet coating show the growth of DLD’s in the 〈110〉 direction from the vicinity of a facet in the stripe region.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.79.Wc Optical coatings

Electroluminescence at the n‐TiO2/electrolyte interface

H. Morisaki and K. Yazawa

Appl. Phys. Lett. 33, 1013 (1978); http://dx.doi.org/10.1063/1.90252 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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We have observed electroluminescence at the n‐TiO2/electrolyte interface under strong polarization of TiO2 electrodes above 8 V versus SCE. The quantum yield, obtained from current and intensity measurements at 10 V versus SCE, was in a range between 10−3 and 10−4. The emission spectrum, measured by optical glass filters, was found to be distributed in a range between 450 and 800 nm, the spectrum peak being approximately 630 nm, which is equivalent to a photon energy of 2.0 eV. This luminescence has been attained to the radiative recombination of electrons in some surface states with holes created in the valence band by electron tunneling.
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78.60.Fi Electroluminescence
73.40.Mr Semiconductor-electrolyte contacts
73.40.Gk Tunneling
82.45.-h Electrochemistry and electrophoresis

Phase‐locked semiconductor laser array

D. R. Scifres, R. D. Burnham, and W. Streifer

Appl. Phys. Lett. 33, 1015 (1978); http://dx.doi.org/10.1063/1.90253 (3 pages) | Cited 43 times

Online Publication Date: 8 August 2008

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Five optically coupled narrow stripe (3.5 μm) GaAs/GaAlAs semiconductor lasers on 8‐μm centers are operated as a spatially coherent phase‐locked laser array. Output beams with less than 2° divergence are observed up to 60 mW/facet output with a quantum efficiency of greater than 25%/facet. Significant nonlinearities do not appear until well over 100 mW/facet output.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Polycrystal silicon recovery by means of a shaped laser pulse train

G. Vitali, M. Bertolotti, and G. Foti

Appl. Phys. Lett. 33, 1018 (1978); http://dx.doi.org/10.1063/1.90245 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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A structure change from a polycrystal to single‐crystal layer in ion‐implanted Si samples has been obtained by single‐pulse ruby‐laser irradiation with a power density threshold of about 70 MW cm−2 (pulse length 50 nsec). Under these conditions surface mechanical damage is produced. A laser pulse train shaping technique was adopted to reduce the residual disorder in the layer after laser irradiation and to prevent mechanical damage.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Jh Ion radiation effects

Effect of H2 on residual impurities in GaAs MBE layers

A. R. Calawa

Appl. Phys. Lett. 33, 1020 (1978); http://dx.doi.org/10.1063/1.90246 (3 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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The introduction of hydrogen during the MBE growth of GaAs is shown to produce a major improvement in the electrical properties of the epitaxial layers. The observed increase in 77 K electron mobilities reflects a significant decrease in total ionized impurity concentration. Evidence is presented that the dominant residual impurities in MBE‐grown GaAs are oxygen and carbon.
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73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors
78.55.Hx Other solid inorganic materials

In situ Ohmic‐contact formation to n‐ and p‐GaAs by molecular beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 33, 1022 (1978); http://dx.doi.org/10.1063/1.90254 (4 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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An in situ Ohmic‐contact‐formation technique for n‐ and p‐GaAs of any resistivity by molecular beam epitaxy was described. The measured specific contact resistances lie between low‐10−6 Ω cm2 and mid‐10−5 Ω cm2. The contacts were Ohmic for currents in excess of 250 mA tested in both forward and reverse directions. Furthermore, the contact metallization was optically smooth as no sintering or alloying process was needed. Excellent uniformity of electrical quality of the Ohmic contacts on the same sample was obtained.
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73.40.Cg Contact resistance, contact potential
68.55.-a Thin film structure and morphology
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

An acoustic SAW/CCD buffer memory device

D. L. Smythe, R. W. Ralston, B. E. Burke, and E. Stern

Appl. Phys. Lett. 33, 1025 (1978); http://dx.doi.org/10.1063/1.90255 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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A SAW piezoelectric delay line has been integrated with a silicon charge‐coupled shift register device (CCD) across a 300‐nm gap to produce a fast‐in slow‐out buffer memory. A prototype with an input bandwidth of 40 MHz centered around 107 MHz, an input signal duration time of 3.5 μs, and an output clock rate of 100 kHz has been fabricated and tested. The basic configuration of this SAW/CCD consists of a lithium niobate (LiNbO3) delay line, in close proximity to an array of 300 sampling fingers connected to a 300‐stage buried‐channel CCD on a p‐type silicon susbtrate. The output of the CCD retains both amplitude and phase of the input signal.
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43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.30.Tv Field effect devices

Schottky‐barrier height of iridium silicide

I. Ohdomari, K. N. Tu, F. M. d’Heurle, T. S. Kuan, and S. Petersson

Appl. Phys. Lett. 33, 1028 (1978); http://dx.doi.org/10.1063/1.90256 (3 pages) | Cited 31 times

Online Publication Date: 8 August 2008

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Iridium silicides have been prepared by annealing Ir films on (100) ‐ and (111) ‐oriented Si from 300 to 500 °C. Phase identification was performed by both x‐ray and electron diffractions, and Schottky‐barrier height by current‐voltage measurements. The silicide IrSi has been found to have a barrier height of 0.93 eV, which is the highest among all the silicides measured. The high value leads us to conclude that the silicide does not follow the linear relation which exists between barrier height and heat of formation of most other silicides.
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73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.-a Thin film structure and morphology

Oxidation‐enhanced diffusion of arsenic and phosphorus in near‐intrinsic 〈100〉 silicon

D. A. Antoniadis, A. M. Lin, and R. W. Dutton

Appl. Phys. Lett. 33, 1030 (1978); http://dx.doi.org/10.1063/1.90257 (4 pages) | Cited 43 times

Online Publication Date: 8 August 2008

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Oxidation‐enhanced diffusion (OED) of phosphorus and arsenic in 〈100〉‐oriented silicon has been characterized under low‐concentration doping conditions. The first indisputable evidence of arsenic OED in silicon has been obtained. The impurities were introduced by ion implantation, and thermally diffused profiles under oxidized and nonoxidized silicon surfaces were obtained simultaneously. Samples were beveled and the doping profiles were characterized by means of spreading resistance. Because of the close proximity of intrinsically diffused and OED profiles, the relative change in diffusivity could be accurately obtained. Both for phosphorus and arsenic the enhancement decreases as temperature increases, a behavior that is in agreement with previously reported data for boron. On the basis of the present data, it can be concluded that (a) the diffusion mechanisms are basically the same for all three elements and (b) the impurity diffusion mechanism involves two types of point defects in silicon, and the oxidation process increases the concentration of only one of these defects.
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66.30.J- Diffusion of impurities
81.65.-b Surface treatments

A refractory lift‐off process with applications to high‐Tc superconducting circuits

R. E. Howard

Appl. Phys. Lett. 33, 1034 (1978); http://dx.doi.org/10.1063/1.90258 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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A refractory stencil lift‐off process utilizing Nb/Cu bilayers is described that is suitable for materials, such as the high‐transition‐temperature superconductors, which must be deposited on hot (up to 1000 °C) substrates.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices
85.40.Bh Computer-aided design of microcircuits; layout and modeling
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