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1 Jul 1978

Volume 33, Issue 1, pp. 1-112

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Measurement of anisotropic interfacial interactions between a nematic liquid crystal and various substrates

Shohei Naemura

Appl. Phys. Lett. 33, 1 (1978); http://dx.doi.org/10.1063/1.90167 (3 pages) | Cited 64 times

Online Publication Date: 8 August 2008

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Wall effects on the Freedericksz transition have been calculated and used to evaluate the interfacial interactions between nematic molecules and substrates. A total reflection method was developed to observe the Freedericksz transition. Both the easy axis and the anchoring strength were measured on the interfaces between MBBA and substrates with several surfactant layers. Experimental results indicate that the polar group of the surfactants plays several roles in their molecular orienting forces.
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61.30.-v Liquid crystals
64.70.M- Transitions in liquid crystals
64.70.P- Glass transitions of specific systems
07.60.Hv Refractometers and reflectometers

A lattice attenuation in CdS measured by the ultrasonic injection method

Tomonobu Hata, Takeshi Nakano, Kikuo Koma, and Toshio Hada

Appl. Phys. Lett. 33, 3 (1978); http://dx.doi.org/10.1063/1.90184 (4 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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This paper concerns the use of Brillouin scattering measurements to study lattice attenuation in semiconducting CdS crystals. Measured acoustic fluxes are produced by the acoustoelectric domains. In order to measure the attenuation constant, an ultrasonic injection method is applied. A sample is divided into two parts; one part is used as a generation region of the acoustic flux [region (1)] and the other part is used as a propagation region of the injected flux [region (2)]. The acoustic attenuations of various frequencies are measured at region (2). The lattice attenuation is greatly affected by the rise time of an applied pulse in region (1). It is clear that acoustic flux in the acoustic domain which originates from the amplification of the pure thermally excited acoustic flux attenuates as f2 and is in accordance with the Akhieser loss. On the other hand, a shock‐excited acoustic flux attenuates as f∼1.5.
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72.50.+b Acoustoelectric effects
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
42.79.Hp Optical processors, correlators, and modulators
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

A simple approach to estimate the size of small surface cracks with the use of acoustic surface waves

B. R. Tittmann, F. Cohen‐Ténoudji, M. de Billy, A. Jungman, and G. Quentin

Appl. Phys. Lett. 33, 6 (1978); http://dx.doi.org/10.1063/1.90148 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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The scattered radiation patterns of surface cracks irradiated by acoustic surface waves are interpreted to provide estimates of crack size. The technique is demonstrated for cracks as small as 100 μm in radius with an accuracy of about 10%.The key features are the positions and spacings of nulls in the angular dependence of the backward scattered surface‐wave intensity. A simple model based on optical diffraction theory is presented and demonstrated on cracks (made with the identation technique) in commercial hot‐pressed silicon nitride studied at 100 MHz and on cracklike flaws in commercial aluminum studied at 2–10 MHz.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Pt Surface waves in solids and liquids
43.20.Fn Scattering of acoustic waves
46.80.+j Measurement methods and techniques in continuum mechanics of solids

An ac method of Seebeck coefficient measurement by the use of lasers

M. Kawai, K. Tahira, K. Kitagawa, and T. Miyakawa

Appl. Phys. Lett. 33, 9 (1978); http://dx.doi.org/10.1063/1.90161 (2 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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The frequency dependence of thermoelectric power and the resistivity change induced by the infrared radiation from a chopped laser beam is used to estimate the Seebeck coefficient of semiconductor samples. The use of data on temperature dependence of resistivity eliminates the need for the measurement of rapidly varying temperature and its gradient within the sample. The method is tested for p‐Ge samples and good agreement is obtained with the results of usual dc measurement.
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72.20.Pa Thermoelectric and thermomagnetic effects

IBIS: A hollow‐cathode multipole boundary ion source

A. T. Forrester, D. M. Goebel, and J. T. Crow

Appl. Phys. Lett. 33, 11 (1978); http://dx.doi.org/10.1063/1.90174 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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The plasma production and containment system for a high‐power continuously operating magnetic multipole ion source has been designed and constructed. Preliminary tests on this system prior to high voltage extraction of large beams indicate advantageous performance for neutral‐beam injection applications. The source has produced 80 A to the extractor region at 0.33 A/cm2 with a discharge of 330 A at 80 V. Density uniformity is better than 1% over a 16‐cm diameter, dropping to −4% at 18 cm, with plasma noise of less than 3%. Gas utilizaion efficiency and atomic (H+) species output are anticipated to be high due to a source length of 40 cm. This quiet efficient performance is attributed to the use of a hollow‐tube LaB6 cathode and an improved magnetic multipole confinement system.
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29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
52.80.Vp Discharge in vacuum
52.50.Dg Plasma sources
52.55.Jd Magnetic mirrors, gas dynamic traps

Laser annealing of diffusion‐induced imperfections in silicon

R. T. Young and J. Narayan

Appl. Phys. Lett. 33, 14 (1978); http://dx.doi.org/10.1063/1.90164 (3 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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High‐temperature diffusion of boron or phosphorus into silicon leads to the formation of spherical precipitates and/or dislocation loops in the diffused layer which influence electrical junction characteristics. These diffusion‐induced imperfections can be removed by high‐energy pulse laser treatment. The boron or phosphorus atoms previously contained in the precipitates become electrically active and the resulting dopant concentration can exceed the solid solubility limit.
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66.30.Lw Diffusion of other defects
64.75.-g Phase equilibria
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

A vapor collect method applied to the measurement of magnesium diffusion in tungstened nickel

J. Verhoeven

Appl. Phys. Lett. 33, 16 (1978); http://dx.doi.org/10.1063/1.90165 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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The diffusion rate of magnesium in tungstened nickel was measured at temperatures between 970 and 1330 K. The method consists of measuring the species and number of atoms collected on a collector in front of the evaporating surface in a well‐defined geometrical arrangement under ultrahigh‐vacuum conditions. The collected material is analyzed by means of AES. Experiments on the diffusion of magnesium in tungstened nickel yield an activation energy of 57 kcal/mole. The vapor collect method shows great potentialities for the measurement of evaporation rates and its dependence on surface contaminants.
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66.30.J- Diffusion of impurities
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
64.70.Hz Solid-vapor transitions

Polyacetylene, (CH)x: n‐type and p‐type doping and compensation

C. K. Chiang, S. C. Gau, C. R. Fincher, Y. W. Park, A. G. MacDiarmid, and A. J. Heeger

Appl. Phys. Lett. 33, 18 (1978); http://dx.doi.org/10.1063/1.90166 (3 pages) | Cited 123 times

Online Publication Date: 8 August 2008

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A series of experiments are reported which demonstrate that donors or acceptors can dope polyacetylene to n type or p type, respectively, and that the two kinds of dopants can compensate one another. The formation of a rectifying p‐n junction is demonstrated. These results suggest the possibility of utilizing doped polyacetylene in a variety of potential semiconductor device applications.
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72.80.Le Polymers; organic compounds (including organic semiconductors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.U- Doping and impurity implantation

Role of stresses in annealing of ion‐implantation damage in Si

K. Seshan and E. P. EerNisse

Appl. Phys. Lett. 33, 21 (1978); http://dx.doi.org/10.1063/1.90168 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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Recent results showing a crystallographic orientation dependence of growth kinetics, secondary defects, and stress relief in annealing of ion‐implanted Si are shown to be self‐consistent if interpreted in terms of the influence of stresses upon annealing processes. The stress influence proposed is microplastic shear which is induced in [112] directions on (111) planes inclined to the implant surface by the biaxial stress created in the implant region by ion‐implantation damage. The shear stresses are shown to be dependent on crystallographic orientation in a manner consistent with the model.
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61.80.Jh Ion radiation effects
61.72.U- Doping and impurity implantation
61.72.Yx Interaction between different crystal defects; gettering effect

Integrated bistable optical devices

P. W. Smith, I. P. Kaminow, P. J. Maloney, and L. W. Stulz

Appl. Phys. Lett. 33, 24 (1978); http://dx.doi.org/10.1063/1.90175 (3 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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We describe several versions of an integrated bistable optical device fabricated with Ti in‐diffused waveguides in LiNbO3. The ends of the LiNbO3 crystal are cleaved to form a Fabry‐Perot resonator. These devices can be operated with as little as 1 pJ of optical switching energy.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Organometallic‐sourced VPE AlGaAs/GaAs concentrator solar cells having conversion efficiencies of 19%

N. J. Nelson, K. K. Johnson, R. L. Moon, H. A. Vander Plas, and L. W. James

Appl. Phys. Lett. 33, 26 (1978); http://dx.doi.org/10.1063/1.90176 (2 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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AlGaAs/GaAs heterojunction solar cells having conversion efficiencies greater than 19% have been produced on large‐area substrates (13 cm2) using the organometallic‐sourced VPE process. At 1 sun (simulated AM2) these devices have open‐circuit voltages of 1.01 V and short‐circuit currents of 20.9 mA/cm2. In sunlight at a flux concentration of 933 suns at AM2.1, a conversion efficiency of 19% and a fill factor of 0.757 was measured.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Polycrystalline fiber optical waveguides for infrared transmission

D. A. Pinnow, A. L. Gentile, A. G. Standlee, A. J. Timper, and L. M. Hobrock

Appl. Phys. Lett. 33, 28 (1978); http://dx.doi.org/10.1063/1.90177 (2 pages) | Cited 58 times

Online Publication Date: 8 August 2008

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A new type of fiber optical waveguide utilizing TlBr and KRS‐5 has been prepared; its infrared transparency extends to wavelengths well beyond those transmitted by known glassy materials.
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42.81.-i Fiber optics
42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials

Theoretical absorption spectra of ArKr

C. F. Bender and N. W. Winter

Appl. Phys. Lett. 33, 29 (1978); http://dx.doi.org/10.1063/1.90178 (3 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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We present the results of ab initio calculations for the ArKr+ potential‐energy curves. The curves and calculated transition moments have been used to calculate the cross section for absorption from the bound ground state. After including spin‐orbit interaction, two strong absorptions are predicted with peak cross sections and wavelengths of 1.3×10−16 cm2 at 295 nm and 4.8×10−18 cm2 at 376 nm. The 295‐nm absorption band has a cross section of 1.5×10−17 cm2 at the 248‐nm wavelength of KrF.
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31.15.V- Electron correlation calculations for atoms, ions and molecules
31.50.Df Potential energy surfaces for excited electronic states

Iron pentacarbonyl photodissociation laser

Daniel W. Trainor and Siva A. Mani

Appl. Phys. Lett. 33, 31 (1978); http://dx.doi.org/10.1063/1.90179 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Laser action was observed when mixtures of Fe(CO)5 and an inert gas were irradiated with a focused beam of KrF laser photons (λ=248 nm). Single‐pass amplified spontaneous emission was observed in two wavelength regions: the near uv and the yellow‐green. Measurements made with narrow bandpass filters showed nearly 60% of the output photons were at 385 nm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Gj Diffuse spectra; predissociation, photodissociation
82.50.Hp Processes caused by visible and UV light

Bragg switch for optical channel waveguides

B. Chen and C. M. Meijer

Appl. Phys. Lett. 33, 33 (1978); http://dx.doi.org/10.1063/1.90180 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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An optical switch based on the deflection of optical beams between two crossed channel waveguides by an electro‐optic grating was designed and tested. The waveguide medium is Ti‐diffused LiNbO3. At 30 V applied voltage, 92% depletion in the original channel and 48% deflection in the deflected channel was obtained.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Ls Scanners, image intensifiers, and image converters
78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Two‐photon‐ and x‐ray‐induced Nb4+ and O− small polarons in LiNbO3

O. F. Schirmer and D. von der Linde

Appl. Phys. Lett. 33, 35 (1978); http://dx.doi.org/10.1063/1.90181 (4 pages) | Cited 114 times

Online Publication Date: 8 August 2008

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ESR investigations show that two‐photon excitation and x irradiation of nominally pure LiNbO3 crystals at 20 K create electrons, which are self‐trapped as Nb4+, and holes, which are captured at acceptor‐type defects as O−. The radiation‐induced absorption at low temperatures is attributed to these centers. The trapped electrons and holes play an important role in the two‐photon‐induced photorefractive process.
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71.38.-k Polarons and electron-phonon interactions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Cb X-ray effects
76.30.Kg Rare-earth ions and impurities

High temperature single‐mode cw operation with a junction‐up TJS laser

Hisao Kumabe, Toshio Tanaka, Hirofumi Namizaki, Makoto Ishii, and Wataru Susaki

Appl. Phys. Lett. 33, 38 (1978); http://dx.doi.org/10.1063/1.90182 (2 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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A modified TJS laser has been developed, in which the current is effectively confined to the active region. When heat sinked through the substrate, the laser operates continuously at over 100 °C in a single longitudinal and fundamental transverse mode.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
72.80.Ey III-V and II-VI semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Energy ordering of the excited states of XeF

D. Kligler, H. H. Nakano, D. L. Huestis, W. K. Bischel, R. M. Hill, and C. K. Rhodes

Appl. Phys. Lett. 33, 39 (1978); http://dx.doi.org/10.1063/1.90183 (3 pages) | Cited 31 times

Online Publication Date: 8 August 2008

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Ar/Xe/NF3 mixtures were excited by the focused beam from an ArF (193 nm) laser. Xe+ ions are produced by two‐photon ionization, the electrons attach to make F−, and the ions recombine to make XeF∗. Radiation is observed in the XeF(B 1/2) →XeF(X 1/2) bands near 351 nm and in the broader XeF(C 3/2) →XeF(A 3/2) band near 460 nm. At low background gas pressure, mostly B‐X uv emission is observed. As the argon pressure is increased to 1000 Torr, the visible/uv band intensity ratio increases to about 3 to 1. We conclude from these results that the C (3/2) state lies 700±70 cm−1 below the B (1/2) state. This conclusion should have a significant impact on our understanding of the fluorescence yields and laser performance of e‐beam‐excited XeF.
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31.50.Df Potential energy surfaces for excited electronic states
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Observation of amplified phase‐conjugate reflection and optical parametric oscillation by degenerate four‐wave mixing in a transparent medium

David M. Pepper, Dan Fekete, and Amnon Yariv

Appl. Phys. Lett. 33, 41 (1978); http://dx.doi.org/10.1063/1.90185 (4 pages) | Cited 36 times

Online Publication Date: 8 August 2008

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We report on the observation of amplified reflection and optical parametric oscillation via degenerate four‐wave mixing in a nonresonant medium. The process is mediated through the third‐order nonlinear susceptibility in a transparent liquid medium, CS2. A collinear mixing geometry is utilized to obtain long interaction lengths and polarization discrimination is used to separate the pump and signal fields.
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42.30.Va Image forming and processing
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Room‐temperature operation of lattice‐matched InP/Ga0.47In0.53As/InP double‐heterostructure lasers grown by MBE

B. I. Miller, J. H. McFee, R. J. Martin, and P. K. Tien

Appl. Phys. Lett. 33, 44 (1978); http://dx.doi.org/10.1063/1.90186 (4 pages) | Cited 27 times

Online Publication Date: 8 August 2008

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Molecular beam epitaxial (MBE) growth of InP/Ga0.47In0.53As/InP double heterostructures has resulted in pulsed room‐temperature lasing at 1.65 μm. Thresholds as low as 3.2 kA/cm2 for a 0.6‐μm‐thick layer has been achieved. These results were achieved by ’’premixing’’ the Ga and In together in a common source oven and precisely monitoring the Ga/In flux ratio during the growth of the Ga0.47In0.53As layer. Cd diffusion from a vapor source allowed us to p dope the top InP layer in the as‐grown MBE wafer.
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42.55.Px Semiconductor lasers; laser diodes
68.55.-a Thin film structure and morphology
85.60.Jb Light-emitting devices
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Cryosorption‐pumped cw chemical laser

K. R. Newton and R. B. Bernstein

Appl. Phys. Lett. 33, 47 (1978); http://dx.doi.org/10.1063/1.90187 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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A miniature cw chemical laser is described which can serve as a convenient multiline source in the ir. It employs condensible carrier gases with cryosorption pumping only (thus no moving parts) to deliver 300 and 200 mW, respectively, of HF and HCl radiation. Five laser reactions with a total of nine lines each of HCl and HF in the regions 2.6–3.0 and 3.6–4.0 μm, respectively, have been observed. For the F+CH4 reaction (using SF6 as the F atom source and carrier gas) most of the power extracted is in the P1(4) line. For the Cl+HBr reaction, the full laser power is emitted in the P1(5) line.
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42.55.Ks Chemical lasers
42.60.By Design of specific laser systems

The observation of transients in a CO2 or N2O ir laser by modulation of an intracavity absorber

E. Arimondo and P. Glorieux

Appl. Phys. Lett. 33, 49 (1978); http://dx.doi.org/10.1063/1.90162 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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A damped oscillation following a stepwise modulation of an intracavity saturable absorber has been observed in the output power of an infrared CO2 and N2O laser. A high frequency of oscillation (∼100 kHz) and a large damping rate were observed for a high laser power and, when the laser power was lowered, both were reduced with the damping rate becoming zero as the laser started passive Q switching. The smooth variation of the characteristics into the passive Q‐switching region indicates that the damped oscillation is caused by the same mechanism which causes the passive Q switching, that is, the exchange of radiative energy between the laser gain medium and the saturable absorber. For a laser operating in the low‐power regime, a narrow resonance has been observed in the laser modulation depth when the frequency of the stepwise modulation was varied continuously from 10 to 100 kHz. This resonance can be used effectively for increasing the sensitivity of intracavity laser spectroscopic experiments.
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42.50.-p Quantum optics
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques

Chlorine isotope enrichment by the photochemical reaction of chlorine molecules using the Ar ion laser

Kazuo Suzuki, Pil Hyon Kim, and Susumu Namba

Appl. Phys. Lett. 33, 52 (1978); http://dx.doi.org/10.1063/1.90188 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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For isotope enrichment of chlorine, Cl2 was excited by a 488‐nm line of the Ar ion laser and reacted with tetrachloroethylene. It was found that the reaction rate was limited to the excitation rate of Cl2 by the laser. The enrichment factor of 37Cl in residual Cl2 increased linearly with the irradiation time and the result agreed with the approximate relation derived from the reaction rate. The enrichment factor of 1.17 was obtained after 120 min irradiation at the laser power of 180 mW.
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28.60.+s Isotope separation and enrichment
42.62.-b Laser applications
82.50.-m Photochemistry

Detection of atomic hydrogen and deuterium by resonant three‐photon ionization

G. C. Bjorklund, C. P. Ausschnitt, R. R. Freeman, and R. H. Storz

Appl. Phys. Lett. 33, 54 (1978); http://dx.doi.org/10.1063/1.90163 (3 pages) | Cited 28 times

Online Publication Date: 8 August 2008

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Resonantly enhanced three‐photon ionization spectroscopy is employed for the detection of ground‐state atomic hydrogen and deuterium. Concentrations as low as 4×109 atoms/cm3 in the presence of 1017 atoms/cm3 of buffer gas are detected with an implicit time resolution of less than 10 nsec. A useful dynamic range of at least 4×104 is demonstrated and saturation of the ionization in a 2×10−4‐cm3 focal volume is observed. The presence of H can easily be distinguished from that of D and the three‐dimensional spatial distribution of H or D can be determined.
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32.10.Bi Atomic masses, mass spectra, abundances, and isotopes
32.80.Rm Multiphoton ionization and excitation to highly excited states
32.80.Wr Other multiphoton processes
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes

ZnCl2 glass: A potential ultralow‐loss optical fiber material

L. G. Van Uitert and S. H. Wemple

Appl. Phys. Lett. 33, 57 (1978); http://dx.doi.org/10.1063/1.90189 (3 pages) | Cited 37 times

Online Publication Date: 8 August 2008

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Zinc chloride glass is a potentially useful medium for ultralow‐loss (∼1 dB/103 km) optical fibers for wavelengths in the 3.5–4‐μm region. In this region, intrinsic absorption, scatter, and material dispersion are all expected to be small, and the common fully oxidized transition metal impurities and H2O should exhibit extremely weak absorption as well.
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42.81.-i Fiber optics
42.70.Ce Glasses, quartz
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
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