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15 Nov 1978

Volume 33, Issue 10, pp. 845-897


Acousto‐optic measurement of optical‐field profiles in diffused LiNbO3 waveguides

N. L. Rowell, R. Normandin, and G. I. Stegeman

Appl. Phys. Lett. 33, 845 (1978); http://dx.doi.org/10.1063/1.90208 (2 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Brillouin scattering from thermal longitudinal phonons in Ti in‐diffused LiNbO3 waveguides is shown to provide a direct measurement of the optical‐field profiles and the velocity of sound in the in‐diffused region.
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42.82.-m Integrated optics
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.79.Gn Optical waveguides and couplers
43.35.Dh Pretersonics (sound of frequency above 10 GHz); Brillouin scattering

Frequency up‐shift for cyclotron‐wave instability on a relativistic electron beam

J. L. Hirshfield, K. R. Chu, and S. Kainer

Appl. Phys. Lett. 33, 847 (1978); http://dx.doi.org/10.1063/1.90209 (2 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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The axial drift of a relativistic electron beam along a uniform magnetic field is shown theoretically to lead to significant frequency up‐shifts for linear cyclotron‐wave instabilities driven by velocity‐space anisotropy. This mechanism suggests novel means for the development of devices for generation of intense far‐infrared power.
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52.35.Hr Electromagnetic waves (e.g., electron-cyclotron, Whistler, Bernstein, upper hybrid, lower hybrid)
52.27.Ny Relativistic plasmas

Monte Carlo simulation of electron penetration through thin films of PMMA

I. Adesida, R. Shimizu, and T. E. Everhart

Appl. Phys. Lett. 33, 849 (1978); http://dx.doi.org/10.1063/1.90210 (2 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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The electron penetration through thin films of PMMA has been simulated using two different Monte Carlo approaches. One approach is conventional, in that the energy loss of the electron along its trajectory is computed using the continuous‐slowing‐down approximation. The statistical nature of inelastic scattering events, as well as the elastic scattering events, is taken into account in the second approach, which is based on an extension of Gryzinski’s semiempirical expression for the excitation of core electrons and also the excitation of valence electrons through the use of an appropriate mean binding energy. The energy distribution of transmitted electrons through PMMA films of various thicknesses obtained by both methods are compared. The second approach is shown to give a more realistic answer for the transmitted electron energy distribution.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
79.20.Kz Other electron-impact emission phenomena
29.40.-n Radiation detectors

Hydrogen plasma diagnostics by resonant multiphoton optogalvanic spectroscopy

C. P. Ausschnitt, G. C. Bjorklund, and R. R. Freeman

Appl. Phys. Lett. 33, 851 (1978); http://dx.doi.org/10.1063/1.90211 (3 pages) | Cited 27 times

Online Publication Date: 8 August 2008

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Direct pulsed‐laser photoionization of neutral atomic hydrogen or deuterium in a discharge plasma is shown to result in large voltage changes across the electrodes. The ground‐ and excited‐state densities and the translational temperature of the H and D atoms within the plasma are probed by this technique.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements

High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm

M. A. Washington, R. E. Nahory, M. A. Pollack, and E. D. Beebe

Appl. Phys. Lett. 33, 854 (1978); http://dx.doi.org/10.1063/1.90212 (3 pages) | Cited 29 times

Online Publication Date: 8 August 2008

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We report In1−xGaxAsyP1−y/InP photodiode detectors with external quantum efficiencies of 50–70% without antireflection coating. The short‐ and long‐wavelength response limits of these very efficient detectors can be compositionally tuned to lie anywhere in the wavelength range 0.9<λ<1.7 μm.
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72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Coupling length adjustment for an optical directional coupler by loading a metal film

Osamu Mikami and Juichi Noda

Appl. Phys. Lett. 33, 856 (1978); http://dx.doi.org/10.1063/1.90213 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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A simple method for realizing the desired light coupling for an optical directional coupler is presented. This method consists of loading a metal film on one of the waveguides in the undesired coupling region. The effective coupling length, fabricated in c‐plate LiNbO3, could be changed from 0 to 3L0 (L0: 0‐dB coupling length) by controlling the length of the metal film.
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42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

LEIT effect in metal‐insulator‐semiconductor tunnel junctions

S. L. McCarthy and John Lambe

Appl. Phys. Lett. 33, 858 (1978); http://dx.doi.org/10.1063/1.90214 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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Light emission via inelastic tunneling (LEIT) has been observed from the metal‐insulator‐semiconductor tunnel‐junction Al‐Al2O3‐ Sn‐doped indium oxide (ITO). The spectra exhibit the bias‐voltage‐dependent upper‐frequency quantum cutoff relation. These devices were stable at room temperature for months at a time while biased to 3 V. The external quantum efficiency of this metal‐insulator‐semiconductor system is about 0.1 that of the metal‐insulator‐metal system Al‐Al2O3‐Ag. Enhancement of the light emission using silver particle resonators is also reported.
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78.60.Fi Electroluminescence
73.40.Gk Tunneling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Electroreflectance of In0.79Ga0.21As0.54P0.46

T. Nishino, Y. Yamazoe, and Y. Hamakawa

Appl. Phys. Lett. 33, 861 (1978); http://dx.doi.org/10.1063/1.90215 (2 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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We have measured Schottky‐barrier electroreflectance spectra of an In0.79Ga0.21As0.54P0.46 LPE layer at 81 K. Analysis of the spectra has enabled us to determine the interband reduced mass of the quaternary alloy together with the values of the band gap and spin‐orbit splitting. The obtained reduced mass μ=0.033m0, in agreement with the value calculated from interpolations of the accepted values for the related binary compounds.
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78.20.Jq Electro-optical effects
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Investigation of the radiative recombination process in CdSe (P‐band) with 2‐psec time resolution

S. F. Bryant, V. S. Dneprovskii, and W. Sibbett

Appl. Phys. Lett. 33, 863 (1978); http://dx.doi.org/10.1063/1.90192 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The characteristic delay, rise, and decay times of recombination radiation at high exciton densities (P∞‐band) in CdSe monocrystal (77 K) were measured with 2‐psec time resolution and found to be 34±6, 9±2, and 16±3 psec, respectively. The values of the rate constants of the exciton‐exciton interaction and of the binding of free carriers into excitons were estimated.
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78.60.-b Other luminescence and radiative recombination
31.70.Hq Time-dependent phenomena: excitation and relaxation processes, and reaction rates
42.65.-k Nonlinear optics

Focusing and phase conjugation of photon echoes in Na vapor

N. C. Griffen and C. V. Heer

Appl. Phys. Lett. 33, 865 (1978); http://dx.doi.org/10.1063/1.90193 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The focusing and phase conjugation of photon echoes was observed in Na vapor. If the radius of curvature of the first pulse was R1 and the second pulse R2, the radius of curvature of the echo was given by 1/RE=2/R2−1/R1 and the echo center of curvature or focus followed from the phase ϕE(r) =2ϕ2(r)−ϕ1(r) in the Na cell.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.30.Va Image forming and processing
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Coherent Raman scattering with three lasers

S. Chandra, A. Compaan, and E. Wiener‐Avnear

Appl. Phys. Lett. 33, 867 (1978); http://dx.doi.org/10.1063/1.90194 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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General conditions for four‐wave mixing processes are investigated for the three‐dimensional geometry. Unlike the standard two‐frequency coherent Raman scattering, the use of three laser beams allows great flexibility in the phase‐matching condition. Theoretically calculated plots are presented for dispersive and nondispersive media and are compared with experimental results in carbon disulphide and hydrogen gas, respectively.
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42.65.-k Nonlinear optics
42.25.Kb Coherence
42.50.-p Quantum optics
78.30.C- Liquids

Laser plasma isolator for a retropulse in a CO2 laser amplifier chain

Y. Kawamura, H. Takeda, M. Matoba, S. Nakai, and C. Yamanaka

Appl. Phys. Lett. 33, 870 (1978); http://dx.doi.org/10.1063/1.90195 (2 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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A laser plasma isolator was developed to attenuate a retropulse in a high‐power CO2 laser system. An attenuation ratio of 1/20 of a main laser beam (∼1‐J 3‐nsec pulse‐width FWHM) was obtained by blowing off a carbon plasma induced by a plasma production laser beam (∼0.5‐J 3‐nsec pulse‐width FWHM) onto the waist of the main laser beam.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Singe‐mode cw operation of ’’double‐dovetail’’ constricted DH (AlGa)As diode lasers

Dan Botez

Appl. Phys. Lett. 33, 872 (1978); http://dx.doi.org/10.1063/1.90196 (3 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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Constricted double‐heterojunction (CDH) lasers have been prepared in a double‐dovetail channel structure, which consistently provides cw fundamental‐mode operation. Oscillation in both single lateral and single longitudinal modes (spectral halfwidth <0.09 Å) is obtained at drive currents 50–100% above threshold and to cw power levels as high as 12 mW. ’’Kinkless’’ power‐current curves at 20 and 70°C have been obtained from all lasers prepared to date to power levels close to that at which degradation occurs (∼30 mW cw at 20 °C for a 3–4‐μm‐wide lasing region). Threshold currents of 55–75 mA and external differential quantum efficiencies (one facet) of 15–17% are obtained from 120–150‐μm‐long diodes with a reflector on one facet. Threshold current ratios as low as 1.26 have been measured between 20 and 70 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.62.-b Laser applications

Invariant properties of helical‐circular metallic waveguides

M. E. Marhic, L. I. Kwan, and M. Epstein

Appl. Phys. Lett. 33, 874 (1978); http://dx.doi.org/10.1063/1.90197 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Experimental evidence shows that toroidal or helical‐circular metallic waveguides, operating on the whispering‐gallery principle, can be bent significantly without affecting either their ray‐guiding or modal properties. These remarkable properties, reported here for the first time for any type of surface guide, result from the fact that the allowed deformations are geodesic and conserve the curvature of the rays. Scanning in one or two dimensions with a diffraction‐limited beam has been achieved.
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42.79.Gn Optical waveguides and couplers
42.25.Gy Edge and boundary effects; reflection and refraction

The spatial distribution of heating of aluminum targets by laser‐ignited air plasmas

J. A. McKay and J. T. Schriempf

Appl. Phys. Lett. 33, 877 (1978); http://dx.doi.org/10.1063/1.90198 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Measurements of the heating of metal targets in air by laser pulses with plasma ignition have shown substantial enhancement of thermal coupling compared to simple infrared absorption. This heat is in some cases spread over an area much larger than the laser spot. We present direct measurements of the spatial distribution of aluminum target heating with a high‐energy (11 kJ, 40 μs) CO2 laser pulse. This observed distribution is compared to that calculated for a model of thermal coupling via thermal emission from a vertically propagating disk‐shaped plasma. This model yields a better fit to the data than is obtained for a model of coupling via thermal conduction from a hydrodynamically expanding plasma due to Robin.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
79.20.Ds Laser-beam impact phenomena

Electron‐beam‐pumped KrF laser with a neon‐argon diluent

G. L. Oomen and W. J. Witteman

Appl. Phys. Lett. 33, 878 (1978); http://dx.doi.org/10.1063/1.90199 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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Enhanced laser action of KrF∗ is observed for a diluent mixture of Ar and Ne. If the Ar diluent is replaced by neon, the maximum output is practically unchanged. For an optimized mixture of Ne and Ar the output is increased by more than 50%. The system, with an active length of 50 cm and a diameter of 4 cm, is transversely excited by an e‐beam with a pulse duration of 30 nsec, current density of 100 A/cm2, and energy of 750 kV. The maximum output energy is 2.1 J.
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42.60.By Design of specific laser systems
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Light‐sensitive electron‐loss measurements on clean and oxygen‐adsorbed amorphous silicon

Jacques Derrien, Bernard Goldstein, Alain Cros, and Frank Salvan

Appl. Phys. Lett. 33, 881 (1978); http://dx.doi.org/10.1063/1.90200 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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We have observed light‐sensitive oxygen‐induced low‐energy electron losses at amorphous silicon surfaces at 7.6, 10.1, and 12.9 eV. The crucial feature of our interpretation is the requirement that surface states in the band gap, isolated from the valence and conduction bands, must be involved in the loss transitions. An energy‐level scheme, based on the above requirement and on the valence‐ and conduction‐band structure determined by others, can readily account for the observed loss transitions and their light sensitivity.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.23.-k Electronic structure of disordered solids
79.20.-m Impact phenomena (including electron spectra and sputtering)

Flicker noise in semiconductors: Not a true bulk effect

A. van der Ziel

Appl. Phys. Lett. 33, 883 (1978); http://dx.doi.org/10.1063/1.90201 (2 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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From the fact that good silicon JFET’s do not have any flicker noise, it is concluded that flicker noise in semiconductors and semiconductor devices cannot be a true bulk effect. Since JFET’s have no semiconductor‐oxide interface to speak of, whereas all other semiconductor devices do, this points to the semiconductor‐oxide interface as the source of 1/f noise. This leads to the following model. The carriers are trapped and detrapped by oxide traps, and this gives rise to two distinct noise effects: density fluctuation noise that can be described by the McWhorter model and mobility fluctuation noise that could possibly be described by the Kleinpenning model. The two models might therefore ultimately be unified into a single model, and it would depend on the device under study whether one or the other noise effect would predominate.
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72.70.+m Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling

Correspondence between the antimony contents of the sputtered films and the targets

Anant G. Sabnis and Anton G. Moldovan

Appl. Phys. Lett. 33, 885 (1978); http://dx.doi.org/10.1063/1.90202 (2 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Thin films of antimony‐doped tin dioxide are deposited by dc sputtering from sintered targets containing 10, 20, and 30% Sb2O3 by weight of SnO2. The concentrations of Sb, Sn, and O in the films and in the target surfaces are determined by using Auger electron spectroscopy. It is observed that the Sb content in the films depends nonlinearly upon the Sb2O3 contents of the targets, and that the films become increasingly resistive with Sb2O3 content beyond 10% in the target. In the films the Sb content is less than the Sn content, although the reverse is true in the case of the targets.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
81.15.Cd Deposition by sputtering
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

The influence of laser annealing on lattice damage in single‐crystal silicon

W. A. Porter, D. L. Parker, T. Wm. Richardson, and E. J. Swenson

Appl. Phys. Lett. 33, 886 (1978); http://dx.doi.org/10.1063/1.90203 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The ability of a cw‐pumped Nd : YAG laser to anneal process‐induced slip damage in silicon is demonstrated via x‐ray topography as well as Sirtl etching. Severely dislocated regions of a silicon wafer were scanned by the laser at various power levels. X‐ray topographs of the regions indicate that 55–110 J/cm2 can anneal even severely damaged material. Further, the depth of the anneal is estimated to be between 10 and 25 μ.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Study of two‐dimensional Gunn domain dynamics using a stroboscopic SEM

M. Masuda, T. Ogura, and J. Koyama

Appl. Phys. Lett. 33, 888 (1978); http://dx.doi.org/10.1063/1.90204 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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Two‐dimensional domain dynamics has been clarified in a cathode‐slanted planar Gunn diode under the pulse‐biased operation using a stroboscopic scanning electron microscope. Experimental results are in reasonable agreement with theoretical results.
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72.20.Ht High-field and nonlinear effects
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Determination of surface‐ and bulk‐generation currents in low‐leakage silicon MOS structures

S. D. Brotherton and A. Gill

Appl. Phys. Lett. 33, 890 (1978); http://dx.doi.org/10.1063/1.90205 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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A technique is presented in which, by appropriately biasing a circular MOS capacitor surrounded by an annular electrode, it is possible to directly measure generation currents from controllably depleted surfaces. Knowledge of the surface‐generation velocity from this measurement then facilitates the correction of the usual MOS relaxation data to account for generation effects at peripheral surfaces. From the measurements presented, it is demonstrated that the technique is particularly useful for assessing state‐of‐the‐art low‐leakage devices.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

A dry‐etched inorganic resist

M. S. Chang and J. T. Chen

Appl. Phys. Lett. 33, 892 (1978); http://dx.doi.org/10.1063/1.90206 (4 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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An as‐deposited As2S3 thin film is employed as a negative working inorganic resist in lithographic applications. A CF4 plasma is used to etch differentially for pattern delineation. A maximum etch rate ratio of 1.8 between the unexposed and exposed films is obtained. Ag‐photodoped As2S3 is found to have a much slower etch rate in the CF4 plasma. Grating patterns have been obtained using this dry process. The extension of this concept to conventional organic polymer resists is considered.
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68.55.-a Thin film structure and morphology
85.40.Bh Computer-aided design of microcircuits; layout and modeling
42.70.Gi Light-sensitive materials
82.50.-m Photochemistry

Influence of film stress and thermal oxidation on the generation of dislocations in silicon

A. Bohg and A. K. Gaind

Appl. Phys. Lett. 33, 895 (1978); http://dx.doi.org/10.1063/1.90207 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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The experimental data presented here show that the generation of dislocations in Si along Si3N4 edges is due to the cumulative effect of the Si3N4 stress field near the nitride edge and to the point defects produced during thermal oxidation. Within our experimental range, the stress along the Si3N4 edges alone is not sufficient to generate dislocations in silicon. We have determined a critical ratio of Si3N4 thickness to SiO2 thickness which does not lead to the generation of dislocations.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.65.-b Surface treatments
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
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