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1 Dec 1978

Volume 33, Issue 11, pp. 903-974

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Separation of storage effects in monolithic pn diode correlators

F. C. Lo, R. L. Gunshor, R. F. Pierret, and J. K. Elliott

Appl. Phys. Lett. 33, 903 (1978); http://dx.doi.org/10.1063/1.90234 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The use of a combination of steady and pulsed dc biasing of a ZnO monolithic SAW device enabled a distinction to be made between surface‐state and pn diode storage mechanisms in a single memory correlator device. By use of demonstrated biasing schemes, storage times of from tens of microseconds to tens of miliseconds are available in a single device.
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43.60.-c Acoustic signal processing
72.50.+b Acoustoelectric effects

Negative and positive cesium ion studies

D. G. Kuehn, D. E. Sutliff, and L. M. Chanin

Appl. Phys. Lett. 33, 906 (1978); http://dx.doi.org/10.1063/1.90235 (3 pages) | Cited 2 times

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Mass spectrometric analyses have been performed on the positive and negative species from discharges in Cs, He‐Cs, and He‐H2‐Cs mixtures. Sampling was conducted through the electrodes of normal glow discharges and from close‐spaced heated‐cathode conditions, which approximate a cesium thermionic converter. No negative Cs ions were observed for Cs pressures less than 10−2 Torr. Identified species included Cs+, Cs+2, Cs−, and what appeared to be multiply charged ions. Low‐mass negative and positive ions attributed to H2 were observed when an He‐H2 mixture was also present in the discharge region.
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52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes
84.60.Ny Thermionic conversion
07.75.+h Mass spectrometers
52.70.Nc Particle measurements

Transition radiation from neutral beams of hydrogen isotopes

L. L. DeRaad and T. Erber

Appl. Phys. Lett. 33, 908 (1978); http://dx.doi.org/10.1063/1.90240 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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Transition radiation can be emitted by neutral‐charge structures, such as atoms, crossing the interface between dielectric media. Intensities in excess of 103 photons/sec, in the energy range 1–50 keV, may be obtained from high‐power (≳100 kV, ≳1 A) beams of neutral hydrogen isotopes incident on foils. This effect may have practical implications for constructing energy‐sensitive monitors for intense neutral beams.
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29.40.-n Radiation detectors
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)

Axial translation of field‐reversing E layers

D. J. Rej, M. Tuszewski, H. A. Davis, and H. H. Fleischmann

Appl. Phys. Lett. 33, 910 (1978); http://dx.doi.org/10.1063/1.90241 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Experiments are described in which field‐reversing E layers were transported axially in RECE‐Christa over a distance of up to 10 ring radii using time‐varying magnetic fields. When properly executed, this process does not lead to anomalous fast‐electron losses. The translation speed appears consistent with that expected from the interaction of the rings with the axial Bz‐field gradients and the resistive tank wall. No significant difference is observed between moving the rings in a homogeneous H2 fill and moving them from a transient gas cloud into a low‐gas‐density region.
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52.55.Fa Tokamaks, spherical tokamaks
52.55.Hc Stellarators, torsatrons, heliacs, bumpy tori, and other toroidal confinement devices
29.20.Ej Linear accelerators

X‐ray‐preionized high‐pressure KrF laser

Shin Sumida, Minoru Obara, and Tomoo Fujioka

Appl. Phys. Lett. 33, 913 (1978); http://dx.doi.org/10.1063/1.90242 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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As a novel alternative to existing means of preionization, we have used x radiation to preionize a high‐pressure KrF laser mixture and found that the x‐ray preionization produces a uniform glow discharge for high‐pressure KrF laser gas.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
07.85.-m X- and γ-ray instruments
42.60.By Design of specific laser systems
52.80.Hc Glow; corona

Deuterium enrichment by cw CO2 laser‐induced reaction of methane

D. S. Y. Hsu and T. J. Manuccia

Appl. Phys. Lett. 33, 915 (1978); http://dx.doi.org/10.1063/1.90243 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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A cw CO2 laser is used to vibrationally excite CH2D2. Intentional VT deactivation competes with interisotope VV transfer and prepares a sample of gas in which the CH2D2 is excited while the CH4 remains unexcited on a steady‐state basis. Subsequent reaction of this mixture with chlorine atoms and molecules forms a stable product, deuterated methyl chloride, enriched in deuterium by up to 72%. Extension to the CH3D system will be discussed. A conservative estimate of the energy requirement for a commercial facility (natural abundance feed) based on the latter system gives a value within a factor of 4 of that required by the currently used H2O/H2S commercial process.
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28.60.+s Isotope separation and enrichment
42.60.-v Laser optical systems: design and operation

Laser‐induced reactions of platinum and other metal films with silicon

J. M. Poate, H. J. Leamy, T. T. Sheng, and G. K. Celler

Appl. Phys. Lett. 33, 918 (1978); http://dx.doi.org/10.1063/1.90244 (3 pages) | Cited 64 times

Online Publication Date: 8 August 2008

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We have reacted thin Pt, Pd, and Ni films with single‐crystal Si using Q‐switched Nd : YAG laser pulses of 100‐nsec duration in the power range 18–50 MW cm−2. The layers are laterally very uniform in thickness but are not single phase. Average composition of the reaction product layer can be changed over a wide range by varying film thickness and laser power. The microstructure of the reacted layers indicates that reaction occurs via surface melting, mixing, and rapid resolidification.
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68.55.-a Thin film structure and morphology
81.20.-n Methods of materials synthesis and materials processing
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Ion‐implanted InGaAsP avalanche photodiode

H. D. Law, L. R. Tomasetta, and K. Nakano

Appl. Phys. Lett. 33, 920 (1978); http://dx.doi.org/10.1063/1.90218 (3 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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High‐quantum‐efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10−6 A/cm2 at 10 V. The devices have 65% external quantum efficiency at 1.06 μm without an antireflection coating and a uniform avalanche gain of 12.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Dw Photodiodes; phototransistors; photoresistors
61.72.U- Doping and impurity implantation
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Photoacoustics on a microscopic scale

H. K. Wickramasinghe, R. C. Bray, V. Jipson, C. F. Quate, and J. R. Salcedo

Appl. Phys. Lett. 33, 923 (1978); http://dx.doi.org/10.1063/1.90219 (3 pages) | Cited 47 times

Online Publication Date: 8 August 2008

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We have modified a transmission acoustic microscope by replacing the input lens with an optical counterpart. The input to this system comes from a mode‐locked and Q‐switched Nd : YAG laser at 1.06 μm. Acoustic signals arising from thermoelastic coupling are generated in metallic films at frequencies determined by the modulation envelope of the optical beam. The output acoustic lens and transducer responsive to sound waves at 840 MHz detect the acoustic energy which comes from the heated volume (∼2‐μm diameter) near the focal region. The sample is mechanically scanned through the focal point in a raster pattern to record the photoacoustic images. We suggest this as a method for collecting new information on microscopic structures.
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43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

XeF ground‐state dynamics in a laser discharge

S. F. Fulghum, I. P. Herman, M. S. Feld, and A. Javan

Appl. Phys. Lett. 33, 926 (1978); http://dx.doi.org/10.1063/1.90220 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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The time evolution of gain and absorption in an XeF laser discharge is studied using a pulsed uv dye‐laser probe and timing system with ±7‐nsec resolution. The dissociation rate of the lowest vibrational level of the XeF ground state as a function of helium buffer pressure is found to have a slope of 1×104 sec−1 Torr−1 (±15%).
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Enhancement of nonlinear optical processes with a double‐pass tight‐focusing geometry

S. R. J. Brueck and Helge Kildal

Appl. Phys. Lett. 33, 928 (1978); http://dx.doi.org/10.1063/1.90221 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The first use of a double‐pass geometry to enhance the conversion efficiency of a parametric nonlinear process in the tight‐focusing limit is reported. For third‐harmonic generation in liquid–CO‐O2 mixtures using a CO2 laser pump source, the observed enhancement is 2.5; elimination of reflection losses will result in an enhancement of 4. The double‐pass geometry has also been used to obtain accurate measurements of the wave‐vector mismatch Δk of the nonlinear medium.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Efficient thallium photodissociation laser

D. J. Ehrlich, J. Maya, and R. M. Osgood

Appl. Phys. Lett. 33, 931 (1978); http://dx.doi.org/10.1063/1.90222 (3 pages) | Cited 29 times

Online Publication Date: 8 August 2008

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We report on an atomic thallium laser at 535.0 and 377.6 nm which is pumped by the photodissociation of TlI with the 193‐nm output of an ArF laser. High‐resolution Fabry‐Perot scans of the 535.0‐nm line have shown a structure in the laser spectrum which depends on the Tl inversion density. The energy efficiency for conversion of the pump into thallium laser emission has been measured to be 14±3%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
32.30.Jc Visible and ultraviolet spectra
82.50.Hp Processes caused by visible and UV light

Core‐level photoemission of the Cs‐O adlayer of NEA GaAs cathodes

W. E. Spicer, I. Lindau, C. Y. Su, P. W. Chye, and P. Pianetta

Appl. Phys. Lett. 33, 934 (1978); http://dx.doi.org/10.1063/1.90223 (2 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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Negative‐electron‐affinity (NEA) photocathodes are made possible by adding Cs and oxygen to the surface of Si or GaAs and other III‐V materials. In this work, the chemistry of the Cs‐O adlayer on GaAs is studied by following the Cs, Ga, and As core‐level shifts at hν=120 eV. The changes in binding energy for the Cs core levels were studied as a function of oxygen exposure. Oxygen was found to bind to As of GaAs for exposures above 10 L. These results are discussed in terms of the importance of Cs suboxides, in relation to the interfacial barriers which limit the ultimate photothreshold of NEA cathodes.
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79.60.Jv Interfaces; heterostructures; nanostructures
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)

Electron collisional laser in Pb+ populated by recombination

W. T. Silfvast, L. H. Szeto, and O. R. Wood II

Appl. Phys. Lett. 33, 936 (1978); http://dx.doi.org/10.1063/1.90224 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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A quasi‐steady‐state inversion and laser action in the near infrared in Pb+ are shown to occur as a consequence of recombination and subsequent electron collisional thermalization within two ’’bands’’ of atomic energy levels. This demonstrates a mechanism for producing similar inversions at short wavelengths in a recombining plasma where the plasma density may be too high for radiative decay to establish an inversion.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
51.70.+f Optical and dielectric properties
52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)

Diffused homojunction lead‐sulfide‐selenide diodes with 140 K laser operation

Wayne Lo and Don E. Swets

Appl. Phys. Lett. 33, 938 (1978); http://dx.doi.org/10.1063/1.90225 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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We have fabricated PbS1−xSex homojunction diode lasers which operate up to 90 K cw and 140 K pulsed. Photon confinement was achieved by a carrier‐concentration profile rather than the usual compositional heterojunction. This results in a tuning range of 350 cm−1 under cw operation.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
66.30.Lw Diffusion of other defects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Sagnac fiber‐ring interferometer gyro with electronic phase sensing using a (GaAl)As laser

D. E. Thompson, D. B. Anderson, S. K. Yao, and B. R. Youmans

Appl. Phys. Lett. 33, 940 (1978); http://dx.doi.org/10.1063/1.90226 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Rotation‐sensitive fiber‐ring interferometers have been demonstrated using balanced heterodyne phase‐detection techniques. Red He/Ne and infrared (GaAl)As lasers were employed with balanced elasto‐optic frequency shifters as sources. Rotation‐induced phase shift (Sagnac effect) was demonstrated using both single‐mode and multimode low‐loss fibers.
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06.30.-k Measurements common to several branches of physics and astronomy
07.60.Ly Interferometers
42.62.-b Laser applications

Electrochromism of anodic iridium oxide films on transparent substrates

J. L. Shay, G. Beni, and L. M. Schiavone

Appl. Phys. Lett. 33, 942 (1978); http://dx.doi.org/10.1063/1.90227 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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Anodic iridium oxide films (AIROF’s) can be grown and operated on transparent substrates. Using SnO2‐coated glass as the substrate we can monitor large, rapid, and persistent variations of the light intensity transmitted through the AIROF. The voltammogram of the AIROF on SnO2‐coated glass is essentially identical to that of an AIROF on iridium. This proves that the electrochemistry producing the coloration does not involve the substrate.
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68.55.-a Thin film structure and morphology
82.45.-h Electrochemistry and electrophoresis
85.60.Pg Display systems

Interferometric waveguide modulator with polarization‐independent operation

W. K. Burns, T. G. Giallorenzi, R. P. Moeller, and E. J. West

Appl. Phys. Lett. 33, 944 (1978); http://dx.doi.org/10.1063/1.90228 (4 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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A Mach‐Zehnder interferometric waveguide modulator is demonstrated which simultaneously modulates both TE and TM modes. Two sets of electrodes are utilized to provide approximate independent control of vertical and horizontal field components across the channel waveguides. In Z‐X–cut LiNbO3 this is shown to provide two polarization‐independent points of operation. With Ti‐diffused waveguides operated at 0.633 μm we obtained 90–95% modulation with applied voltages of 1.3 and 44 V and also with −8 and −36 V. Electrode design and alignment are shown to be important factors in device operation.
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42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Ionization coefficients of Ga0.72Al0.28Sb avalanche photodetectors

H. D. Law, K. Nakano, L. R. Tomasetta, and J. S. Harris

Appl. Phys. Lett. 33, 948 (1978); http://dx.doi.org/10.1063/1.90229 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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The performance of an optical receiver depends heavily on the excess multiplication noise characteristics of the avalanche photodetector. The excess multiplication noise factor of an avalanche photodiode depends on the ratio of the electron and hole ionization coefficients. The ionization coefficients of 1.06‐μm photodiodes fabricated from Ga0.72Al0.28Sb have been measured. The results show a hole‐to‐electron ionization‐coefficient ratio of 2, which implies an excess gain noise factor F of 5.9 when the diode is operated at a gain of 10.
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79.70.+q Field emission, ionization, evaporation, and desorption
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling

Mass and energy dependence of the equilibrium surface composition of sputtered tantalum oxide

E. Taglauer and W. Heiland

Appl. Phys. Lett. 33, 950 (1978); http://dx.doi.org/10.1063/1.90230 (3 pages) | Cited 27 times

Online Publication Date: 8 August 2008

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Anodically oxidized Ta2O5 surfaces were sputtered with 300–1800‐eV He+ and Ar+ ions. The surface composition was measured with AES and ISS. The results clearly show that the equilibrium surface composition depends on mass and energy of the primary ions. This composition is reversible for different masses or energies. A short discussion of these effects is given, including the characteristic fluence for obtaining equilibrium.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.80.Jh Ion radiation effects
68.60.-p Physical properties of thin films, nonelectronic
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

The energy level of thallium in silicon

S. D. Brotherton and A. Gill

Appl. Phys. Lett. 33, 953 (1978); http://dx.doi.org/10.1063/1.90231 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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Thermal‐emission‐rate measurements, including DLTS, have been made on thallium‐doped gated diode structures fabricated using an implanted thallium source. The rate of thermal emission was found to be strongly field dependent, giving results comparable to the prediction of the simple Poole‐Frenkel model. The field‐free trap separation from the valence‐band edge was determined to be 0.24 eV, with a hole‐capture cross section of 2.4×10−14 cm2.
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78.40.Fy Semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Annealing of ion‐implanted silicon by an incoherent light pulse

H. A. Bomke, H. L. Berkowitz, M. Harmatz, S. Kronenberg, and R. Lux

Appl. Phys. Lett. 33, 955 (1978); http://dx.doi.org/10.1063/1.90232 (3 pages) | Cited 20 times

Online Publication Date: 8 August 2008

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Annealing of boron‐implanted silicon by a single 15‐μsec pulse from a flash lamp has been observed. The required energy density was 27 J/cm2 incident on the silicon. Electrical activity of boron was comparable to that in thermally annealed samples.
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61.72.U- Doping and impurity implantation
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Rs Electrical and magnetic properties related to treatment conditions

Deep‐level traps and the conduction‐band structure of InP

A. Majerfeld, O. Wada, and A. N. M. M. Choudhury

Appl. Phys. Lett. 33, 957 (1978); http://dx.doi.org/10.1063/1.90233 (3 pages) | Cited 12 times

Online Publication Date: 8 August 2008

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Three traps found in n‐type InP with emission activation energies ΔEe=0.43, 0.59, and 0.63 eV are analyzed. The position of the energy levels for these traps, relative to the lowest conduction‐band minimum Γ, are ET=0.34, 0.20, and 0.24 eV, respectively. It is shown that the 0.43‐eV trap emits to and captures electrons from the Γ minimum and exhibits a thermally activated capture cross section with a barrier energy of 0.09 eV. Very good agreement is found between the capture cross sections derived from capture and from emission experiments: σ∞=3.4×10−15 and 5.8×10−15 cm2, respectively. It is concluded from detailed emission and capture studies that the 0.59‐ and 0.63‐eV traps emit and capture carriers via the higher‐lying L minima. A value of 0.39 eV for the intervalley L‐Γ energy separation is consistent with the observed emission and capture properties of both centers.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

The effect of minor constituents on the electrotransport‐induced failure site in thin gold films

R. E. Hummel, B. K. Krumeich, and R. T. DeHoff

Appl. Phys. Lett. 33, 960 (1978); http://dx.doi.org/10.1063/1.90217 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The presence of small amounts of some solute elements in gold thin films causes a reversal of the failure site during an electrotransport experiment. The effectiveness of a solute element in accomplishing this reversal is not correlated with melting point, solubility, or atomic radius. However, solute elements that produced a reversal in gold films (sodium, indium, barium) all have low ionization energies. Auger electron spectroscopy revealed that sodium from a microscope glass substrate penetrates through a gold film to its free surface during current stressing or during furnace annealing.
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73.61.At Metal and metallic alloys
81.40.Rs Electrical and magnetic properties related to treatment conditions
85.40.Bh Computer-aided design of microcircuits; layout and modeling

Lattice deformations and misfit dislocations in GaInAsP/InP double‐heterostructure layers

Kunishige Oe, Yukinobu Shinoda, and Koichi Sugiyama

Appl. Phys. Lett. 33, 962 (1978); http://dx.doi.org/10.1063/1.90236 (3 pages) | Cited 28 times

Online Publication Date: 8 August 2008

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Lattice deformations and misfit dislocations are studied by x‐ray double‐crystal diffraction and topography for GaInAsP/InP double‐heterostructure layers epitaxially grown on (001) InP substrates. No misfit dislocation was observed at the interfaces when the misfits Δa⊥/a between the lattice constants normal to the wafer surface of GaInAsP (0.4 μm thick) and InP layers are within about 5×10−3. The unit cell of the GaInAsP epitaxial layer is tetragonally deformed due to the interface lattice misfit such that the lattice constant parallel to the wafer surface is nearly invariant across the GaInAsP/InP interfaces in the DH wafers both with and without misfit dislocations for ‖Δa⊥/a‖<6.4×10−3.
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62.20.F- Deformation and plasticity
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology
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