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1 Dec 1978

Volume 33, Issue 11, pp. 903-974

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Ohmic contacts produced by laser‐annealing Te‐implanted GaAs

P. A. Barnes, H. J. Leamy, J. M. Poate, S. D. Ferris, J. S. Williams, and G. K. Celler

Appl. Phys. Lett. 33, 965 (1978); http://dx.doi.org/10.1063/1.90237 (3 pages) | Cited 26 times

Online Publication Date: 8 August 2008

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We report the formation of Ohmic contacts to high‐dose (∼1016 cm−2) Te‐implanted n‐type GaAs annealed with a Q‐switched Nd : YAG laser. The annealing results in a Te concentration greater than 10 times the equilibrium solubility and the formation of free Ga at the surface. Ohmic contacts of specific contact resistance rc≃2×10−5 Ω cm2 were obtained by first removing the surface Ga by an HCl etch and then backsputtering to remove 50 Å of GaAs, thereby exposing a surface of high Te concentration.
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79.20.Ds Laser-beam impact phenomena
61.72.U- Doping and impurity implantation
81.40.Rs Electrical and magnetic properties related to treatment conditions

Compensation of mobile‐ion movement in SiO2 by ion implantation

James A. Topich

Appl. Phys. Lett. 33, 967 (1978); http://dx.doi.org/10.1063/1.90238 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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A study has been undertaken to determine the effect of ion‐implanted fluorine on the properties of SiO2 for use as a gate dielectric in MOS devices. C‐V measurements and bias‐temperature stressing showed that mobile‐ion drift can be compensated for by the implanted ions. Further tests showed that it is the implant damage and not the ion itself which was responsible for the compensation. uv excitation of the samples was used in an attempt to identify the nature of the compensation effect, but the results are not definitive.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.80.Jh Ion radiation effects

A model for the large‐amplitude hysteresis in MIS structures on InSb

J. Buxo, D. Esteve, J. Farre, G. Sarrabayrouse, and J. Simonne

Appl. Phys. Lett. 33, 969 (1978); http://dx.doi.org/10.1063/1.90239 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Time‐instability measurements of the capacitance‐voltage (C‐V) characteristics of InSb MIS devices show that the flatband voltage shift follows VG=K (V)  log(1+t/τ) and appears to be caused by tunneling of free carriers from the semiconductor surface into insulator traps. The analysis of such a mechanism emphasizes the influence of the semiconductor band‐gap width on the values of K for InSb substrates at 77 °K leading to about a 100 times larger instability than silicon sustrates at 300 °K for an equal value of the insulator trap density.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling

Plastic deformation of V3Si single crystals at elevated temperatures

S. Mahajan, J. H. Wernick, G. Y. Chin, S. Nakahara, and T. H. Geballe

Appl. Phys. Lett. 33, 972 (1978); http://dx.doi.org/10.1063/1.90216 (3 pages) | Cited 24 times

Online Publication Date: 8 August 2008

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Plastic stress‐strain characteristics of V3Si single crystals, oriented for [110] compression, have been ascertained under dynamic conditions between 1200 and 1800 °C. This is believed to be the first such report on the A‐15 compound superconductors. In the range 1200–1500 °C, yield strength is very temperature sensitive, whereas the sensitivty is not very pronounced between 1600 and 1800 °C. In addition, substructures introduced by a ∼7% compressive strain at different temperatures appear to have no deleterious effects on transition temperatures and transition widths.
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74.25.-q Properties of superconductors
81.40.Lm Deformation, plasticity, and creep
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
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