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1 Jul 1978

Volume 33, Issue 1, pp. 1-112

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Intense laser emission from electron‐beam‐pumped ternary mixtures of Ar, N2, and POPOP vapor

G. Marowsky, R. Cordray, F. K Tittel, W. L. Wilson, and C. B. Collins

Appl. Phys. Lett. 33, 59 (1978); http://dx.doi.org/10.1063/1.90190 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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Powerful laser output was observed at 381 nm from electron‐beam‐pumped ternary mixtures of argon‐nitrogen and 2,2′‐p‐phenylinebis(5‐phenyloxazole) (POPOP) dye vapor. The injection of the subthreshold 380.5‐nm N2 line into the electrically excited gain profile of POPOP vapor has been identified as a pumping mechanism.
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42.55.Mv Dye lasers

Loss in cleaved Ti‐diffused LiNbO3 waveguides

I. P. Kaminow and L. W. Stulz

Appl. Phys. Lett. 33, 62 (1978); http://dx.doi.org/10.1063/1.90191 (3 pages) | Cited 31 times

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The attenuation coefficient and coupling loss were measured in single‐mode Ti‐diffused LiNbO3 waveguides with cleaved end faces. Coplanar electrodes increase the attenuation substantially but a dielectric buffer layer can eliminate most of the electrode absorption.
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42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Measurements of kinetic processes in a self‐sustained discharge XeF laser

M. C. Gower, R. Exberger, P. D. Rowley, and K. W. Billman

Appl. Phys. Lett. 33, 65 (1978); http://dx.doi.org/10.1063/1.90146 (3 pages) | Cited 9 times

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The XeF∗ and F∗ sidelight emissions, the small‐signal gain, and the transient plasma absorption near the laser wavelength have been measured from a XeF self‐sustained discharge laser. We conclude that the production of XeF∗ in its lower vibrational levels requires collisions with He atoms, and that XeF∗ decays predominantly by radiative processes and He quenching. The transient absorption at the laser wavelength, believed to be due to F−, F∗, F∗2, and Xe+2, can be as large as ∼1–2%/cm at small‐signal gains of ∼8%/cm.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition

R. D. Dupuis and P. D. Dapkus

Appl. Phys. Lett. 33, 68 (1978); http://dx.doi.org/10.1063/1.90147 (2 pages) | Cited 8 times

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Room‐temperature operation of new type of Ga1−xAlxAs‐GaAs laser employing distributed Bragg reflectors for optical and carrier confinement has been demonstrated. These distributed‐Bragg‐confinement lasers are grown by metalorganic chemical vapor deposition and exhibit low‐threshold current densities and small angular beam divergence.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.79.Mt Schlieren devices
78.45.+h Stimulated emission

Application of Li2O compensation techniques to Ti‐diffused LiNbO3 planar and channel waveguides

W. K. Burns, C. H. Bulmer, and E. J. West

Appl. Phys. Lett. 33, 70 (1978); http://dx.doi.org/10.1063/1.90149 (3 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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We report a novel technique to determine the index change in Li2O in‐diffused surface layer in LiNbO3 by observing the cutoff angle of the extraordinary substrated mode as it refracts through the surface‐layer–substrate interface. Surface‐layer index changes from 10−4 to 10−2 were measured in various samples which received compensation treatments for times of 10 min to 6 h, primarily in LiNbO3 powder. We also report the successful compensation of nearly single‐mode Ti : LiNbO3 channel waveguides.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
81.40.Tv Optical and dielectric properties related to treatment conditions
66.30.H- Self-diffusion and ionic conduction in nonmetals

Room‐temperature continuous operation of photopumped MO‐CVD AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well lasers

N. Holonyak, R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus

Appl. Phys. Lett. 33, 73 (1978); http://dx.doi.org/10.1063/1.90150 (3 pages) | Cited 30 times

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Room‐temperature continuous operation (cw, 300 °K) of photopumped AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers embedded in Cu under diamond windows is demonstrated. The quantum‐well heterostructures are grown by metalorganic chemical vapor deposition (MO‐CVD) and possess undoped (nd−na≲1015/cm3) or compensated (nZn∼1019/cm3, nSe∼8×1018/cm3) GaAs active layers of thickness Lz∼200 Å.
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42.55.Px Semiconductor lasers; laser diodes
78.55.-m Photoluminescence, properties and materials
71.23.An Theories and models; localized states
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Oxidation mechanisms in WSi2 thin films

S. Zirinsky, W. Hammer, F. d’Heurle, and J. Baglin

Appl. Phys. Lett. 33, 76 (1978); http://dx.doi.org/10.1063/1.90151 (3 pages) | Cited 67 times

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The utilization of WSi2 thin films as gate electrodes in field‐effect transistors depends on the ability of this material to form a continuous electrically insulating SiO2 overlayer. In the steam oxidation of WSi2 films deposited on polysilicon, SiO2 forms on the surface by means of the rapid diffusion of Si through the WSi2 which appears in this case to be quite inert. During the initial stages of the steam oxidation of WSi2 films deposited on SiO2, removal of Si from the silicide (to form SiO2) apparently leads to the formation of free W, rather than the anticipated tungsten‐rich W3Si3.
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66.30.-h Diffusion in solids
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
85.30.Tv Field effect devices

Dopant tracing of terrace growth in GaAs LPE layers

B. Fischer, E. Bauser, P. A. Sullivan, and D. L. Rode

Appl. Phys. Lett. 33, 78 (1978); http://dx.doi.org/10.1063/1.90152 (3 pages) | Cited 10 times

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Growth terraces on the surface of GaAs liquid phase epitaxial layers leave behind traces of increased doping concentration in the interior of the layer. These traces have been observed on (110) cleavage planes perpendicular to the (100) surface. Spatially resolved photoluminescence, cathodoluminescence, and photoetching have been applied to reveal the traces of the terraces. A fine structure on the photoetched cleavage plane indicates that the increase of thickness of the layer is caused in part by lateral growth of fine terraces traveling across the treads of the high terraces.
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68.55.-a Thin film structure and morphology
78.60.Hk Cathodoluminescence, ionoluminescence
78.40.Fy Semiconductors

A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon

D. E. Carlson and C. W. Magee

Appl. Phys. Lett. 33, 81 (1978); http://dx.doi.org/10.1063/1.90153 (3 pages) | Cited 158 times

Online Publication Date: 8 August 2008

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Secondary ion mass spectroscopy (SIMS) has been used to measure the diffusion of deuterium in hydrogenated amorphous silicon. For a film deposited in a dc glow discharge in SiH4 at a substrate temperature of 315 °C, the diffusion data fits D (T) =1.17×10−2 exp(−1.53 eV/kT) cm2/s. This result implies that degradation of these films due to hydrogen out‐diffusion at 100 °C will not be significant until after more than 104 years.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
61.43.Fs Glasses
61.43.-j Disordered solids

Identification of diffusion species in V‐SiO2 reactions

W.K. Chu and K. N. Tu

Appl. Phys. Lett. 33, 83 (1978); http://dx.doi.org/10.1063/1.90154 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Interfacial reactions between vanadium and thermally grown SiO2 films have been studied with Xe ions implanted in the SiO2 as diffusion markers. After the sample is heated at temperatures from 700 to 900 °C, the SiO2 decomposes and V3Si forms. A backscattering analysis of the marker displacement discloses that vanadium is the dominant moving species which diffuses through the V3Si to react with the SiO2, whereas the oxygen atoms generated as a result of the reaction outdiffuse and oxidize the outer vanadium layer. For a clear presentation of the reaction and marker motion, the usual energy spectra of backscattering have been converted to in‐depth compositional profiles.
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66.30.J- Diffusion of impurities
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Work function and Auger measurements of the initial oxidation of hydrogenated amorphous Si and of single‐crystal Si

Bernard Goldstein and Daniel J. Szostak

Appl. Phys. Lett. 33, 85 (1978); http://dx.doi.org/10.1063/1.90155 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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We have monitored the change in work function during the initial oxidation of discharge‐produced amorphous Si(H) and correlated this change with the amount of adsorbed oxygen as measured by Auger spectroscopy. With exposure to oxygen, the work function first increases (explained in terms of a dipole layer on the surface) and then decreases (explained in terms of penetration of oxygen below the surface). The explanation appears to be confirmed by similar measurements on the three primary crystallographic faces of single‐crystal Si. Initial sticking coefficient and dipole strength of oxygen adsorbed on amorphous Si are given.
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73.30.+y Surface double layers, Schottky barriers, and work functions
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.43.Fs Glasses
61.43.-j Disordered solids

New method of GaAs passivation with thin polymer films

D. Brosset, Bui Ai, and Y. Segui

Appl. Phys. Lett. 33, 87 (1978); http://dx.doi.org/10.1063/1.90156 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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MIS capacitors have been developed on a GaAs (n) substrate, the insulation being a thin layer of polymethylsiloxane (a few thousand angstroms thick). The present aim is to find out whether this process can provide an answer for the passivation of compound‐semiconductor components. The thin layer is deposited on the gallium arsenide substrate. It is obtained by glow discharge in a hexamethyldisiloxane vapor at ambient temperature. The C‐V curves enable the polymer‐semiconductor interface properties to be determined, and in particular the calculation of fixed charges contained in the polymer (QT) and the surface‐state density (Nss).
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
77.55.-g Dielectric thin films
81.65.-b Surface treatments

Anisotropy of the differential conductivity and of the transverse diffusion coefficient in n‐type silicon

D. Gasquet and J. P. Nougier

Appl. Phys. Lett. 33, 89 (1978); http://dx.doi.org/10.1063/1.90157 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Measurements of the transverse differential conductivity of hot carriers in semiconductors are performed, for the first time, using an experimental setup described in the present paper. This allows the determination of the transverse diffusion coefficients.
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72.20.Ht High-field and nonlinear effects

Improved GaAs MESFET with a thin in situ buffer grown by liquid phase epitaxy

C. K. Kim, R. M. Malbon, and M. Omori

Appl. Phys. Lett. 33, 92 (1978); http://dx.doi.org/10.1063/1.90158 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Thin undoped layers of GaAs grown directly on GaAs semi‐insulating substrates via liquid phase epitaxy (LPE) are shown to exhibit excellent buffering characteristics. Interfacial drift mobilities are shown to be much higher for the multilayer structures employing the thin buffer layer as compared with single‐layer structures. GaAs metal semiconductor field‐effect transistors (MESFET) fabricated on these LPE multilayer structures are shown to exhibit excellent rf characteristics. Best results include a noise figure of 1.87 dB with an associated gain of 10.6 dB at 12 GHz and a noise figure of 2.4 dB with an associated gain of 6.3 dB at 18 GHz.
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68.55.-a Thin film structure and morphology
85.30.Tv Field effect devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Secondary dislocation climb during optical excitation of GaAs laser material

G. R. Woolhouse, B. Monemar, and C. M. Serrano

Appl. Phys. Lett. 33, 94 (1978); http://dx.doi.org/10.1063/1.90159 (4 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Dislocation glide and climb during optical excitation of GaAs laser material have been studied. A dislocation which has been induced to glide under high excitation can be induced to climb by reducing the incident excitation. The climb proceeds in a distinctly different crystallographic direction to, and at a rate which is five or six orders of magnitude slower than, the glide. Furthermore, only the threading portion of the dislocation experiences climb, a misfit dislocation excited at the same external intensity for the same time undergoes no discernible growth. Transmission electron microscopy examination of the climb region shows that it consists of a highly convoluted giant dislocation dipole. The nature of this giant dipole has been determined by a calibrated technique and it has been shown to grow by vacancy climb. Small coherent precipitate particles have been identified for the first time in the neighborhood of the giant dipole.
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42.55.Px Semiconductor lasers; laser diodes
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Thermal switching times of superconducting proximity effect weak links

J. D. Franson, G. S. Mitchard, and J. E. Mercereau

Appl. Phys. Lett. 33, 98 (1978); http://dx.doi.org/10.1063/1.90160 (3 pages)

Online Publication Date: 8 August 2008

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At sufficiently low temperatures the onset of thermal hysteresis allows proximity effect weak links to be switched between two stable states. The time required for the voltage to switch between these two states was experimentally measured and found to lie in the range 200–500 psec. The measurements showed detailed agreement with calculations based on a simple heating model.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

Superconducting properties of in situ prepared Nb‐Cu‐Sn alloys

J. D. Verhoeven, D. K. Finnemore, E. D. Gibson, J. E. Ostenson, and L. F. Goodrich

Appl. Phys. Lett. 33, 101 (1978); http://dx.doi.org/10.1063/1.90169 (2 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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Alloys of Cu–20 wt% Nb have been prepared by a chill casting technique. After drawing to fine wire, Nb3Sn was formed by plating and diffusion of Sn. The critical‐current properties and the resistance to degradation of Jc upon mechanical deformation both compare favorably to commercial Nb3Sn tape.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors
74.70.-b Superconducting materials other than cuprates

Hardness and bounding in A15 superconducting compounds

G. Y. Chin, J. H. Wernick, T. H. Geballe, S. Mahajan, and S. Nakahara

Appl. Phys. Lett. 33, 103 (1978); http://dx.doi.org/10.1063/1.90170 (3 pages) | Cited 11 times

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Microhardness of single crystals of V3Si and V3Ge as well as polycrystalline Nb3Ir, Nb3Au, and Nb3Sn have been measured. The relatively high ratio of hardness to elastic constant C44 supports the existence of strong covalency in A3B compounds of the A15 structure. Correlation with interatomic distance suggests covalent bonding (tight binding) in the A‐A chains.
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74.25.-q Properties of superconductors
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
62.20.-x Mechanical properties of solids

Chemical vapor deposition of Nb3Ge on continuous stainless‐steel tapes

S. Païdassi, J. Spitz, and J. Besson

Appl. Phys. Lett. 33, 105 (1978); http://dx.doi.org/10.1063/1.90171 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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Superconducting films of Nb3Ge have been deposited by chemical vapor deposition on continuous stainless‐steel tapes. Critical temperatures as high as 23.6 K (±0.2 K) have been obtained with relatively broad transitions (4–5 K). Critical current densities in magnetic fields of 180 kG are of the order of 105 A cm−2.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

The effect of magnetically aligned powder on the magnetostriction of sintered rare earth–iron Laves phase compounds

M. Malekzadeh and M. R. Pickus

Appl. Phys. Lett. 33, 108 (1978); http://dx.doi.org/10.1063/1.90172 (3 pages)

Online Publication Date: 8 August 2008

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A powder metallurgical approach is utilized to prepare grain‐oriented Laves phase compounds of TbxDy1−xFe2. The magnetostrains observed in the oriented compounds, though containing ∼20% porosity as presently prepared, are far superior to those of arc cast and highly dense liquid‐phase sintered materials. Also, it is shown that the alignment achieved is strongly dependent on the Tb/Dy ratio.
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75.80.+q Magnetomechanical effects, magnetostriction
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
43.35.Rw Magnetoacoustic effect; oscillations and resonance

Elimination of aberrations due to a wavelength shift in holographic microscopy

Y. Shono and T. Inuzuka

Appl. Phys. Lett. 33, 111 (1978); http://dx.doi.org/10.1063/1.90173 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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The principle of aberrationless reconstruction in holographic microscopy is stated. The aberrations due to the wavelength difference between the recording and reconstruction processes can be eliminated by using a volume hologram. The volume hologram reconstructs the negligibly aberrated image of a very narrow region of the object. By using this effect the whole aberrationless image, which is magnified corresponding to the wavelength shift, can be obtained by rotating the volume hologram during the exposure period in which a photograph of the virtual image is taken.
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42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
42.30.Va Image forming and processing
42.40.Ht Hologram recording and readout methods
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