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15 Jul 1978

Volume 33, Issue 2, pp. 115-213

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Observation of grain‐boundary migration using field ion microscopy

H. C. Eaton and R. J. Bayuzick

Appl. Phys. Lett. 33, 115 (1978); http://dx.doi.org/10.1063/1.90303 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The field ion microscope is demonstrated to be a useful tool for studying the motion of grain boundaries in metals. Heating is accomplished by passing a current through a high‐resistance specimen support loop. An example is shown of migration of a grain boundary in tungsten. The radius of curvature at the specimen apex was approximately 12 nm and displacements in the boundary as small as 1 nm are observed.
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61.72.Mm Grain and twin boundaries
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.37.Vj Field emission and field-ion microscopy
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Experimental measurement of the SAW properties of berlinite

D. G. Morency, W. Soluch, J. F. Vetelino, S. D. Mittleman, D. Harmon, S. Surek, J. C. Field, and G. Lehmann

Appl. Phys. Lett. 33, 117 (1978); http://dx.doi.org/10.1063/1.90279 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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The surface acoustic wave properties of berlinite have been measured for the x‐axis boule 92.75° cut. This cut was found to be temperature compensated at 32 °C. The velocity and coupling coefficient k2 were found to be 2747 m/sec and 0.003, respectively. The velocity and temperature coefficient of delay are in reasonable agreement with theory, while the value of k2 is lower than the theoretical value.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Pt Surface waves in solids and liquids

UHF single‐phase line acoustic wave transducers

Michael J. Hoskins, Supriyo Datta, and Bill J. Hunsinger

Appl. Phys. Lett. 33, 119 (1978); http://dx.doi.org/10.1063/1.90304 (3 pages)

Online Publication Date: 8 August 2008

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The feasibility of line acoustic wave delay lines at high frequencies using single‐phase transducers is demonstrated. Experimental results are presented for a 219.5‐MHz device and it is expected that much higher frequency devices are possible.
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43.20.-f General linear acoustics
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties

Fast neutralization of ion beams in the presence of transverse magnetic fields

J. W. Poukey and S. Humphries

Appl. Phys. Lett. 33, 122 (1978); http://dx.doi.org/10.1063/1.90305 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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A crucial problem in pulsed linear ion accelerators is the time‐dependent space‐charge neutralization of the ion beam by electrons from the walls. Analytic estimates and numerical simulation are used to discuss this problem, and it is found that in the presence of a magnetic field transverse (but not normal) to the ion flow, there is nearly complete neutralization on the scale of the ion beam rise time.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
29.20.Ej Linear accelerators
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

A new effect in multiphoton photoeffect of a gold surface induced by picosecond laser pulses

L. A. Lompre, G. Mainfray, C. Manus, J. Thebault, Gy. Farkas, and Z. Horvath

Appl. Phys. Lett. 33, 124 (1978); http://dx.doi.org/10.1063/1.90306 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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A bandwidth‐limited 15‐psec laser pulse is used to induce multiphoton photoelectric emission from a gold metal cathode. The wavelength is tuned between 10 580 and 10 620 Å to investigate the transition from a four‐photon to a five‐photon photocurrent j from a gold surface. This transition gives rise to a new effect marked by a dramatic change of the slope n=∂ logj/∂ logI, where I is the laser intensity.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.20.Ds Laser-beam impact phenomena

Annealing studies of Be‐doped GaAs grown by molecular beam epitaxy

W. V. McLevige, K. V. Vaidyanathan, B. G. Streetman, M. Ilegems, J. Comas, and L. Plew

Appl. Phys. Lett. 33, 127 (1978); http://dx.doi.org/10.1063/1.90307 (3 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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Differential resistivity and Hall effect measurements and secondary ion mass spectrometry (SIMS) are used to study the annealing behavior of GaAs doped with high Be concentrations during growth by molecular beam epitaxy (MBE). The diffusion coefficient of MBE‐grown Be in GaAs is determined to be (0.5–1) ×10−13 cm2/sec at 900 °C, a value which is two orders of magnitude lower than that for implanted Be of equal concentration [(2–3) ×1019 cm−3]. The concentration dependence of the diffusion of MBE‐grown Be in GaAs is also observed to be substantially less than that for implanted Be. The implantation of He in Be‐doped MBE layers to create lattice damage does not significantly affect the Be diffusion in a subsequent anneal.
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66.30.J- Diffusion of impurities
72.80.Ey III-V and II-VI semiconductors
72.20.-i Conductivity phenomena in semiconductors and insulators

Epitaxial growth of deposited amorphous layer by laser annealing

S. S. Lau, W. F. Tseng, M‐A. Nicolet, J. W. Mayer, R. C. Eckardt, and R. J. Wagner

Appl. Phys. Lett. 33, 130 (1978); http://dx.doi.org/10.1063/1.90280 (2 pages) | Cited 28 times

Online Publication Date: 8 August 2008

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We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single‐crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.
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68.55.-a Thin film structure and morphology
42.60.-v Laser optical systems: design and operation
79.20.Ds Laser-beam impact phenomena
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Orientation of crystalline dipoles in poly(vinylidene fluoride) films under electric field

D. Naegele and D. Y. Yoon

Appl. Phys. Lett. 33, 132 (1978); http://dx.doi.org/10.1063/1.90281 (3 pages) | Cited 79 times

Online Publication Date: 8 August 2008

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Orientation of molecular dipoles in poly(vinylidene fluoride) (PVF2) films under electric field has been measured by ir spectroscopy using ir transparent indium‐tin‐oxide electrodes. Significant changes in ir transmission with electric field have been observed at 512 and 446 cm−1, which demonstrate that crystalline dipoles in β‐phase PVF2 orient along the electric field. As the field is cycled between positive and negative values, the dipole orientation exhibits a hysteresislike behavior, demonstrating that the polarization of β‐phase PVF2 and its switching result directly from the orientation of crystalline dipoles. Time response of dipole orientation shows that the total orientation consists of an instantaneous part and a slowly developing part. Only the latter seems to contribute to the remnant polarization and its switching.
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68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Thermal‐pulse technique for determining charge distributions: Effect of measurement accuracy

Heinz von Seggern

Appl. Phys. Lett. 33, 134 (1978); http://dx.doi.org/10.1063/1.90282 (4 pages) | Cited 22 times

Online Publication Date: 8 August 2008

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We examine how the thermal‐pulse technique for determining spatial charge distribution in charged polymer foils is affected by inaccuracies of the measuring process. A theoretical model is developed for thermal equalization processes which is in agreement with the measured temperature transients. Using this model, we show by computer simulation that even for a measurement inaccuracy of less than 1% the obtainable information consists of only the first moment of the charge distribution and the first few Fourier coefficients.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.61.Ng Insulators
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)

Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing

P. Baeri, S. U. Campisano, G. Foti, and E. Rimini

Appl. Phys. Lett. 33, 137 (1978); http://dx.doi.org/10.1063/1.90283 (4 pages) | Cited 85 times

Online Publication Date: 8 August 2008

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The time evolution of temperature and melting in amorphous silicon layers laser irradiated was calculated numerically. Experiments were performed in Si crystals implanted with 400‐keV As to a dose of 5×1015/cm2 and illuminated with 50‐ns‐duration Q‐switched ruby laser pulse in the energy range 1.0–3.0 J/cm2. Comparison between experimental and calculated results allows a quantitative understanding of the amorphous–to–single‐crystal transition. A good agreement was found between the experimental As profiles after laser irradiation and those calculated with a diffusion coefficient of 10−4 cm2/s for As in liquid silicon.
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64.70.K- Solid-solid transitions
79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Efficient amplification of a discharge‐pumped KrF laser

Shuntaro Watanabe, Susumu Shiratori, Takuzo Sato, and Hiroshi Kashiwagi

Appl. Phys. Lett. 33, 141 (1978); http://dx.doi.org/10.1063/1.90284 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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The output energy of 0.75 J has been obtained with a pulse width of 40 ns and an efficiency of 0.8% by using a uv‐preionized KrF amplification system. The stored energy in an amplifier has been improved by a factor of about 1.6 by control of self‐breakdown voltage with a change of electrode separation. The measured saturation energy for this device was 51 mJ/cm2 corresponding to a KrF saturation intensity of 1.2 MW/cm2. The small‐signal gain coefficient reached 4.3%/cm at a charging voltage of 35 kV.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Intense proton‐beam‐pumped Ar‐N2 laser

J. Golden, J. G. Eden, R. A. Mahaffey, J. A. Pasour, A. W. Ali, and C. A. Kapetanakos

Appl. Phys. Lett. 33, 143 (1978); http://dx.doi.org/10.1063/1.90285 (4 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Gas laser action using a current and space‐charge‐neutralized proton beam as a pump source has been demonstrated. Stimulated emission at 357.7 and 380.5 nm, corresponding to the v′=0→v″=1 and v′=0→v″=2 transitions of the N2 (C→B) band, has been observed in Ar/5%N2 gas mixtures. In comparison with electron beams, protons appear to be more efficient for excitation sources of high‐pressure uv and visible lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
42.60.By Design of specific laser systems

Long‐duration high‐efficiency operation of a continuously pulsed copper laser utilizing copper bromide as a lasant

Che Jen Chen, Alaudin M. Bhanji, and Gary R. Russell

Appl. Phys. Lett. 33, 146 (1978); http://dx.doi.org/10.1063/1.90286 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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A copper laser utilizing copper bromide as a lasant and neon as the buffer gas has been operated at an average laser power of between 16 and 19.5 W for a period of 68 h. Lasing was attained at a pulsing rate of 16.7 kHz in a quartz discharge tube 2.5 cm in diameter with an electrode separation of 200 cm. The laser energy/pulse and peak power/pulse corresponding to an average power of 19.5 W are 1.2 mJ and 30 kW, respectively. The ratio of laser power at 510.6 and 578.2 nm varied from 3.9 to 1.1 corresponding to a total average laser power of 4 and 18 W, respectively. The highest wall plug and capacitor efficiency measured during 68 h of operation was 0.7 and 1.1%, respectively.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
52.80.-s Electric discharges

A kinetics scheme for the XeF laser

T. G. Finn, L. J. Palumbo, and L. F. Champagne

Appl. Phys. Lett. 33, 148 (1978); http://dx.doi.org/10.1063/1.90287 (4 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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A kinetics scheme is described for electron‐beam excitation of the XeF laser in a neon diluent. Both Ne+ and Ne∗ channels contribute significantly to the formation of the upper laser level. In each chain an important Penning ionization process leads to the formation of Xe+, which is the major intermediary in forming the upper laser level. Xe+2 is found to be the dominant absorber of laser radiation. The effect of the weakly bound XeF ground state is discussed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
82.20.Wt Computational modeling; simulation
42.60.By Design of specific laser systems

Far‐ir heterodyne radiometric measurements with quasioptical Schottky diode mixers

H. R. Fetterman, P. E. Tannenwald, B. J. Clifton, C. D. Parker, W. D. Fitzgerald, and N. R. Erickson

Appl. Phys. Lett. 33, 151 (1978); http://dx.doi.org/10.1063/1.90288 (4 pages) | Cited 61 times

Online Publication Date: 8 August 2008

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We have made heterodyne radiometric measurements with GaAs Schottky diode mixers, mounted in a corner‐reflector configuration, over the spectral range 170 μm to 1 mm. At 400 μm, system noise temperatures of 9700 K DSB (NEP=1.4×10−19 W/Hz) and mixer noise temperatures of 5900 K have been achieved. This same quasioptical mixer has also been used to generate 10−7 W of tunable radiation suitable for spectroscopic applications.
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73.30.+y Surface double layers, Schottky barriers, and work functions
42.72.-g Optical sources and standards
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
85.30.Hi Surface barrier, boundary, and point contact devices

Gain spectrum of a pulsed laser‐pumped submillimeter laser

Z. Drozdowicz, B. Lax, and R. J. Temkin

Appl. Phys. Lett. 33, 154 (1978); http://dx.doi.org/10.1063/1.90289 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The gain spectrum of a pulsed submillimeter (SMM) laser amplifier has been determined for the first time using single‐mode pump and submillimeter laser oscillators. The gain of a 385‐μm D2O laser amplifier was measured as a function of CO2 laser pump power, D2O laser oscillator power, polarization, and D2O gas pressure. The use of single‐mode lasers permits a direct comparison with theory. Comparison with a theory which takes into account two‐photon contributions to the gain yields good qualitative agreement, in that theory accurately predicts the shape of the gain spectrum, including ac Stark effects and the dependence of the gain on polarization, but not the absolute magnitude of the gain.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
33.80.Be Level crossing and optical pumping

Discharge pumped mercuric halide dissociation lasers

R. Burnham

Appl. Phys. Lett. 33, 156 (1978); http://dx.doi.org/10.1063/1.90290 (4 pages) | Cited 89 times

Online Publication Date: 8 August 2008

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Lasers on the (B‐X) transitions in HgCl, HgBr, and HgI at 558, 502, and 443 nm, respectively, have been excited in a uv‐preionized transverse electric discharge. Marked increases in laser efficiency and output power were obtained when nitrogen was added to the laser discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

Subpicosecond light pulses from a synchronously mode‐locked dye laser with composite gain and absorber medium

G. W. Fehrenbach, K. J. Gruntz, and R. G. Ulbrich

Appl. Phys. Lett. 33, 159 (1978); http://dx.doi.org/10.1063/1.90291 (2 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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We report the generation of subpicosecond light pulses in a cw mode‐locked Oxazine 750 dye laser, utilizing combined synchronous pumping and saturable dye absorption effects. The latter were realized by either fractional cavity length configurations or composite gain‐absorber media, which allowed stable operation in the tuning range 750–835 nm.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems

Tunable optical waveguide directional coupler filter

R. C. Alferness and R. V. Schmidt

Appl. Phys. Lett. 33, 161 (1978); http://dx.doi.org/10.1063/1.90292 (3 pages) | Cited 31 times

Online Publication Date: 8 August 2008

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An integrated optical filter composed of coupled nonidentical strip waveguides in LiNbO3 is demonstrated. The device has a 200‐Å bandwidth, is tunable over several hundred angstroms, and offers electrical control of the crossover efficiency.
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42.79.Ci Filters, zone plates, and polarizers
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

A mode‐locked krypton ion laser with a 50‐psec pulse width in the near uv

L. L. Steinmetz, J. H. Richardson, and B. W. Wallin

Appl. Phys. Lett. 33, 163 (1978); http://dx.doi.org/10.1063/1.90293 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The mode‐locked near‐uv output from a krypton ion laser is characterized and shown to produce near‐transform‐limited picosecond pulses. Applications to time‐resolved fluoresence studies for chemical analysis are included.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.72.-g Optical sources and standards
33.50.Dq Fluorescence and phosphorescence spectra

Photodissociation lasers using forbidden transitions of selenium atoms

H. T. Powell and J. J. Ewing

Appl. Phys. Lett. 33, 165 (1978); http://dx.doi.org/10.1063/1.90294 (3 pages) | Cited 26 times

Online Publication Date: 8 August 2008

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Weak laser oscillation has been demonstrated on the 489‐ and 777‐nm electric‐dipole‐forbidden 1S0–3P1 and 1S0–1D2 transitions of the selenium atom. Carbonyl selenide has been photolyzed at 172 nm by Xe∗2 radiation to produce the Se(1S0) excited state.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Gj Diffuse spectra; predissociation, photodissociation
31.50.Df Potential energy surfaces for excited electronic states

Emitter current suppression in a high‐low‐junction emitter solar cell using an oxide‐charge‐induced electron accumulation layer

A. Neugroschel, F. A. Lindholm, S. C. Pao, and J. G. Fossum

Appl. Phys. Lett. 33, 168 (1978); http://dx.doi.org/10.1063/1.90295 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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A new type of high‐low‐junction emitter silicon solar cell employing an oxide‐charge‐induced electron accumulation layer demonstrates complete suppression of the dark emitter recombination current JE to values so low that the base recombination current dominates in determining the open‐circuit voltage VOC. This suppression of JE results in measured values of VOC considerably larger than those previously reported for n‐on‐p silicon solar cells. This ability to suppress JE leads to projections of efficiency of about 18% AM0 and about 20% AM1 for this oxide‐charge‐induced high‐low‐junction emitter (OCI‐HLE) solar cell.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)

GaAs‐ (GaAl)As LOC‐DBR laser with high differential quantum efficiency

Mohammad Kazem Shams and Shyh Wang

Appl. Phys. Lett. 33, 170 (1978); http://dx.doi.org/10.1063/1.90296 (4 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Operation of a LOC‐DBR laser which exhibits high differential quantum efficiency is reported. It is shown that this result is obtained by further reduction of losses in the unpumped regions of the laser, especially, excessive absorption losses due to nonuniform Al carryover in the thin ’’GaAs’’ layer.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Channeled‐substrate‐planar structure distributed‐feedback semiconductor lasers

T. Kuroda, S. Yamashita, M. Nakamura, and J. Umeda

Appl. Phys. Lett. 33, 173 (1978); http://dx.doi.org/10.1063/1.90297 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Distributed‐feedback Ga1−xAlxAs lasers with a channeled‐substrate‐planar structure are fabricated. They operate in single transverse and longitudinal modes. No spectral broadening or excess noise is observed under high‐frequency modulation as a result of mode stabilization.
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42.55.Px Semiconductor lasers; laser diodes

Gain and saturation of the nitrogen ion laser

C. B. Collins, J. M. Carroll, and K. N. Taylor

Appl. Phys. Lett. 33, 175 (1978); http://dx.doi.org/10.1063/1.90298 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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In this work a dilute nitrogen plasma pumped by charge transfer from He+2 has been operated as a pulsed optical amplifier. In the experimental system used two synchronously excited plasmas were produced by preionized discharges in an atmospheric electrical avalanche device switched by hydrogen thyratrons so that repetitive operation to 30 Hz would be possible. The plasmas were electrically connected in a transverse series circuit to provide a phase delay in their excitation comparable to the optical transit time between them. Laser output at 427.8 nm from the first discharge coupled to the fields in a self‐excited oscillator geometry was threaded through the second along its 85‐cm longer dimension. Calibrated attenuation of the beam from the oscillator subsequently input to the amplifier provided data on the overall amplification ratio to which the two adjustable parameters of a simple model were fit. From these parameters overall small‐signal gains as large as 2×106 were found together with saturation intensities of the order of 50 kW/cm2. Under the same conditions a gain of about 18 was found at an output intensity of 1 MW/cm2, conditions relatively near the ideal extraction of power at zero gain.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
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