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15 Jul 1978

Volume 33, Issue 2, pp. 115-213

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Effects of pinholes, oxide traps, and surface states on MIS solar cells

Martin A. Green

Appl. Phys. Lett. 33, 178 (1978); http://dx.doi.org/10.1063/1.90299 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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It is shown that the insulating layer in metal‐insulator‐semiconductor (MIS) solar cells by no means has to be perfect to obtain optimum photovoltaic performance. Oxide pinhole densities as large as 1000 cm−2 can be tolerated without degrading the device properties. Large densities of oxide traps at energies close to the majority‐carrier band edge in the semiconductor can reduce the cell efficiency as can surface states in nonoptimal devices. Devices optimally designed with an inversion layer at the IS interface are virtually immune to these states, densities in excess of 1013 cm−2 causing no degradation in properties.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects

Low Si‐contamination GaP LPE layers grown at 650 °C from indium solvent

Toshifumi Sugiura, Akira Tanaka, and Tokuzo Sukegawa

Appl. Phys. Lett. 33, 180 (1978); http://dx.doi.org/10.1063/1.90300 (2 pages)

Online Publication Date: 8 August 2008

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High‐quality GaP layers were obtained by liquid phase epitaxy at a low temperature, 650 °C, from indium solvent. We attribute the high quality of the LPE layers to the reduction in the concentrations of vacancies and unintentional impurities such as Si which would come from the growth system.
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68.55.-a Thin film structure and morphology
78.40.Fy Semiconductors
81.10.Dn Growth from solutions

High‐intensity infrared transmission limit in Hg1−xCdxTe

S. A. Jamison and A. V. Nurmikko

Appl. Phys. Lett. 33, 182 (1978); http://dx.doi.org/10.1063/1.90301 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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Studies of intensity‐dependent transmission of pulsed radiation of nanosecond duration at 10.6 μm very near the band gap in n‐Hg0.77Cd0.23Te at low temperatures show evidence of abrupt limiting behavior which manifests itself in no additional transmission for incident intensities exceeding approximately 200 kW/cm2 at T⩽20 K. Measurement of the spectral broadening in the transmitted radiation for excitation of nanosecond duration suggest that such self‐enhanced ’’opacity’’ can be switched on in less than 500 psec. The surprisingly low observed threshold intensities are considered by examining the contribution from inelastic hot‐electron collisions to the generation of excess free carriers.
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78.30.Hv Other nonmetallic inorganics
42.62.-b Laser applications
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Properties of laser‐assisted doping in silicon

K. Affolter, W. Lüthy, and M. von Allmen

Appl. Phys. Lett. 33, 185 (1978); http://dx.doi.org/10.1063/1.90302 (3 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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Ohmic contacts and p‐n junctions in p‐ and n‐type silicon are generated with the aid of a laser. Doping was achieved by covering the surface of the silicon with a layer of dopant and melting locally with pulses from either a Nd : YAG or a CO2 laser. Typical residual resistances of the Ohmic contacts are of the order of 0.1–1 Ω cm2 and backward/forward resistance ratios of 104 were measured for the diodes. A model which takes account of segregation during the cooling process is discussed and shown to agree with the resulting distribution of dopant. Highly doped material was found in a surface layer of a thickness less than 0.5 μm. This thickness was independent of laser parameters.
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61.72.U- Doping and impurity implantation
42.60.-v Laser optical systems: design and operation
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.20.Ds Laser-beam impact phenomena

On the formation of Ni and Pt silicide first phase: The dominant role of reaction kinetics

C. Canali, F. Catellani, G. Ottaviani, and M. Prudenziati

Appl. Phys. Lett. 33, 187 (1978); http://dx.doi.org/10.1063/1.90269 (4 pages) | Cited 30 times

Online Publication Date: 8 August 2008

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4He+ backscattering spectrometry and x‐ray diffractometry have been used to study the formation of Ni and Pt silicides in Si(xtl)/M film structures with different metal film thicknesses ranging from 800 to 5000 Å. Results clearly show that first the phase richer in metal (Ni2Si, Pt2Si) grows and continues to grow until all available metal is reacted, then the phase richer in Si (PtSi, NiSi) starts to grow. Present results prove that in Si(xtl)/Pt or Ni interactions the growth phase is determined by the reaction kinetics and that diffusion of metal atoms through Pt2Si and Ni2Si is fundamental in keeping the reaction going.
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68.55.-a Thin film structure and morphology
82.20.Hf Product distribution

Ambipolar diffusion measurements in semiconductors using nonlinear transient gratings

K. Jaraŝiūnas and H. J. Gerritsen

Appl. Phys. Lett. 33, 190 (1978); http://dx.doi.org/10.1063/1.90270 (4 pages) | Cited 36 times

Online Publication Date: 8 August 2008

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The theory of self‐diffraction of light by transient free‐carrier gratings in semiconductors has been expanded to the case in which nonlinear absorption of light creates the grating. Its application to the experiments performed allowed determination of the free‐carrier ambipolar diffusion coefficients in CdS, CdSe, and ZnSe crystals, and the mechanism of free‐carrier recombination and carrier lifetime in CdS at low temperatures.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
06.60.Jn High-speed techniques (microsecond to femtosecond)

Depth profiling of sodium in SiO2 films by secondary ion mass spectrometry

Charles W. Magee and William L. Harrington

Appl. Phys. Lett. 33, 193 (1978); http://dx.doi.org/10.1063/1.90271 (4 pages) | Cited 36 times

Online Publication Date: 8 August 2008

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A focused beam of electrons in coincidence with a high current density Ar+ sputtering beam and SIMS detection has been used to perform accurate depth profiling analyses of sodium in SiO2 films. Conditions for exact charge compensation are described, and analyses of a 150‐keV sodium implant in a 0.73‐μm film of SiO2 are presented. Without charge neutralization, 98% of the implanted sodium moved to the SiO2/Si interface during SIMS analysis, whereas optimum charge compensation resulted in a basically unaltered implant profile with only 0.06% sodium at the interface.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
07.75.+h Mass spectrometers

Performance of an Al0.92Ga0.08As/Al0.14Ga0.86As solar cell in concentrated sunlight

R. L. Moon, L. W. James, H. A. VanderPlas, and N. J. Nelson

Appl. Phys. Lett. 33, 196 (1978); http://dx.doi.org/10.1063/1.90272 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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An Al0.14Ga0.86As solar cell with an Al0.92Ga0.08As window has been operated in AM2 sunlight at flux concentrations up to 899 suns with a conversion efficiency at this maximum concentration of 15.5%. Evaluation of the cells shows minority‐carrier diffusion lengths ≳2 μm and quantum efficiencies ≈0.85. The use of such a cell for spectral‐splitting high‐efficiency solar cell applications is discussed.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion

Deep center luminescence (1.02 eV) in GaAs/(GaAl)As epitaxial layers and double-heterostructure lasers

S. Metz

Appl. Phys. Lett. 33, 198 (1978); http://dx.doi.org/10.1063/1.90273 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Various LPE GaAs/Ga1−XAlXAs layers and DH lasers of direct alloy composition (0⩽X≲0.35) have been excited by photoluminescence and current injection at 300 K, respectively. All samples emit a weak low-energy band (BIII), peaking at about 1.02 eV independent of material composition X and doping. The responsible deep-level centers therefore remain fixed energetically at 1.02 eV, relative to the (more distant) band edge, as the gap is varied. This striking feature and other characteristics support the hypothesis that BIII results from radiative recombination at defects which are very similar, if not identical, to those labeled E3 in literature on this
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78.40.Fy Semiconductors
42.55.Px Semiconductor lasers; laser diodes
78.60.Fi Electroluminescence

Trap depth and electron capture cross section determination by trap refilling experiments in Schottky diodes

A. Zylbersztejn

Appl. Phys. Lett. 33, 200 (1978); http://dx.doi.org/10.1063/1.90274 (3 pages) | Cited 71 times

Online Publication Date: 8 August 2008

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It is shown that the time‐dependent capacitance change associated trap refilling in a Schottky diode is nonexponential, consisting in the sum of two contributions which reduce to a single one for reverse biases smaller than VSCO, the space‐charge crossover voltage. Determination of VSCO yields both the trap depth ΔE and its capture cross section. This is experimentally demonstrated for the oxygen‐related trap in n‐GaAs. We find ΔE=0.67 eV in good agreement with other determinations.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.40.Fy Semiconductors

Theory of light emission from small particle tunnel junctions

Daniel Hone, B. Mühlschlegel, and D. J. Scalapino

Appl. Phys. Lett. 33, 203 (1978); http://dx.doi.org/10.1063/1.90275 (2 pages) | Cited 34 times

Online Publication Date: 8 August 2008

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We study a simple model of light emission from inelastic electron tunneling into small metallic particles, here represented as spheres. Within a quasistatic approximation for the induced polarization in the electrodes, we calculate the radiated intensity as a function of frequency and direction.
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73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
84.40.Ba Antennas: theory, components and accessories

On the synthesis of A‐15 ’’Nb3Si’’ by ion implantation

Mireille Trevil Clapp and R. M. Rose

Appl. Phys. Lett. 33, 205 (1978); http://dx.doi.org/10.1063/1.90276 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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Ion implantation was used to introduce 20 at.% Si into an A‐15 Nb3Al0.9Si0.1 substrate. The surface was depleted of Al by a diffusion anneal. The Al deficiency was replaced with Si by successive implantations. The surface structures were determined from reflection electron diffraction photographs. After depletion and implantation, the sample surfaces had a disordered bcc structure. A subsequent 800 °C anneal transformed these surfaces into A‐15 Nb3Al0.2Si0.8 by epitaxial recrystallization.
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61.80.Jh Ion radiation effects
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Electrochromism in anodic iridium oxide films

S. Gottesfeld, J. D. E. McIntyre, G. Beni, and J. L. Shay

Appl. Phys. Lett. 33, 208 (1978); http://dx.doi.org/10.1063/1.90277 (3 pages) | Cited 62 times

Online Publication Date: 8 August 2008

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The oxidation state of iridium ions in an oxide film grown electrochemically on an Ir metal reflector electrode in aqueous 0.5M H2SO4 electrolyte can be rapidly and reversibly modulated by voltage pulses of 1 V amplitude according to the reaction: Ir(OH)n(transparent) ⇄IrOx(OH)n−x(colored)+xH++xe. This valency interconversion produces a marked change in light absorption throughout the visible wavelength region and occurs without change in film thickness. Color‐bleach cycles exhibit reflectance contrast changes, ΔR/R, and charging times, τ, suitable for electrochromic display devices, e.g., for a film 700 Å thick: ΔR/R=60% at λ=546 nm and τ≈40 msec. The fast write‐erase times are made possible by the highly porous and hydrated nature of the oxide film. The charge (∼20 mC cm−2) and energy (∼20 mJ cm−2) are comparable with those for other electrochromic oxide systems, e.g., the tungsten bronzes. Advantages of the iridium oxide system include: (i) fast response; (ii) stability of the colored written state in the presence of water and dissolved O2; (iii) broad spectral absorption; and (iv) the ability to grow and reform the oxide layer insitu in the electro‐optic display cell. Electrochromic spectra of anodic iridium oxide films are illustrated and related to charge‐transfer and intervalency transitions.
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78.20.-e Optical properties of bulk materials and thin films
82.45.-h Electrochemistry and electrophoresis
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.60.-q Optoelectronic devices

Characteristic x‐ray spectra of sodium and magnesium measured at room temperature using mercuric iodide detectors

Andrzej J. Dabrowski, Gerald C. Huth, Manbir Singh, Thanasis E. Economou, and Anthony L. Turkevich

Appl. Phys. Lett. 33, 211 (1978); http://dx.doi.org/10.1063/1.90278 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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Mercuric iodide detectors, operating at room temperature with the FET of the first stage of amplification cooled with a two‐stage Peltier element, have been used to detect low‐energy x rays from light elements excited by 2.0‐ and 6.1‐MeV α particles. X‐ray lines from Na (1.04 keV) and Mg (1.25 keV) have been seen for the first time with room‐temperature energy‐dispersive detectors. A resolution of 390 eV at 1.25 keV was obtained. Further improvement of the resolution is believed to be achievable. However, even the present characteristics are adequate for many applications in x‐ray fluorescence and elemental analysis. Several such possible applications are suggested.
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29.30.Kv X- and γ-ray spectroscopy
29.40.Wk Solid-state detectors
07.85.-m X- and γ-ray instruments
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