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1 Aug 1978

Volume 33, Issue 3, pp. 215-269


The kinetics of latent‐image formation in electrophotography with photoferroelectrics

W. F. Berg, V. M. Fridkin, P. Günter, and H. Stähli

Appl. Phys. Lett. 33, 215 (1978); http://dx.doi.org/10.1063/1.90319 (2 pages) | Cited 1 time

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The anomalous photovoltaic effect in ferroelectrics is capable of producing imagewise distributions of voltages sufficiently high to allow for conventional xerographic development. The electric latent image will persist for long periods of time. The kinetics of the buildup of photovoltage has been studied on undoped LiNbO3 and shown to conform to theoretical expectations: the saturation values of the field strongly depend on light intensity.
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72.40.+w Photoconduction and photovoltaic effects
77.80.-e Ferroelectricity and antiferroelectricity

SAW resonators using rf‐sputtered ZnO films on glass substrates

Shusuke Ono, Osamu Yamazaki, Kenzo Ohji, Kiyotaka Wasa, and Shigeru Hayakawa

Appl. Phys. Lett. 33, 217 (1978); http://dx.doi.org/10.1063/1.90320 (2 pages) | Cited 11 times

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SAW resonators have been fabricated from reflection strip arrays of ZnO films on borosilicate glass substrates by rf sputtering and standard photolithographic processing. Unloaded Q values were nearly 1000 and a linear temperature coefficient of about −10 ppm/°C was obtained when operated at a frequency of 100 MHz. Achievable Q values for ZnO/glass SAW resonators at this frequency are discussed.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Ns Acoustical properties of thin films
43.35.Pt Surface waves in solids and liquids
81.15.Cd Deposition by sputtering

Surface‐acoustic‐wave velocity in ion‐implanted quartz at very low temperatures

P. Hartemann, P. Doussineau, and A. Levelut

Appl. Phys. Lett. 33, 219 (1978); http://dx.doi.org/10.1063/1.90321 (3 pages) | Cited 3 times

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A behavior typical of amorphous solids has been observed at very low temperatures for a layer obtained by ion implanting a quartz substrate. A surface‐acoustic‐wave velocity variation has been measured between 0.9 and 6 K for crystalline and implanted quartz by building a 960‐MHz delay line oscillator. The quartz substrate was implanted with helium ions at 95 keV. Over a limited temperature range, the velocity on the implanted surface is proportional to the logarithm of the temperature according to the off‐diagonal interaction between the acoustic wave and a broad distribution of two level defects. An increase of the proportionality coefficient is produced by an annealing at 567 °C and it seems related to a decrease of the specific mass. Moreover, the defect density of states is smaller than that of vitreous silica.
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61.80.Jh Ion radiation effects
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Pt Surface waves in solids and liquids

Tamper temperature and compression from simultaneous proton and alpha‐particle measurements in laser fusion experiments

R. A. Cover, J. J. Kubis, F. J. Mayer, and D. C. Slater

Appl. Phys. Lett. 33, 222 (1978); http://dx.doi.org/10.1063/1.90322 (3 pages) | Cited 2 times

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The energy loss per unit path length for a charged particle incident on a spatially uniform isothermal Maxwellian plasma is a function of the temperature and density of the medium. Within this model the temperature and compression ρΔr of the tamper of a laser‐driven microshell target can be accurately determined, in the absence of electrostatic acceleration, by the simultaneous measurement of the energy loss from 3.52‐MeV α particles from D‐T reactions and 3.02‐MeV protons from D‐D reactions.
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52.70.Nc Particle measurements
52.25.Kn Thermodynamics of plasmas
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
28.52.-s Fusion reactors

Identification of oxide precipitates in annealed silicon crystals

K. H. Yang, R. Anderson, and H. F. Kappert

Appl. Phys. Lett. 33, 225 (1978); http://dx.doi.org/10.1063/1.90323 (3 pages) | Cited 16 times

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We have investigated the electron loss spectra of precipitates formed in annealed silicon crystals. The precipitates, as well as residue of the precipitates in precipitation sites, uniquely give rise to an energy loss at 532 eV. The energy loss is due to the excitation of oxygen 1s electrons. The precipitates are therefore identified as silicon oxide.
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64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation

Epitaxial laser crystallization of thin‐film amorphous silicon

J. C. Bean, H. J. Leamy, J. M. Poate, G. A. Rozgonyi, T. T. Sheng, J. S. Williams, and G. K. Celler

Appl. Phys. Lett. 33, 227 (1978); http://dx.doi.org/10.1063/1.90324 (4 pages) | Cited 36 times

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Vapor‐deposited amorphous silicon films of 4000 Å thickness have been epitaxially crystallized on (100) silicon substrates by pulsed Nd : YAG laser radiation of 125‐nsec duration at power levels of 90–120 MW/cm2. The epitaxial layers were found to be defect free when examined by transmission electron microscopy and Rutherford backscattering. Patterned arrays of epitaxial crystal were produced by overlapping individual 39‐μm laser pulse spots.
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68.55.-a Thin film structure and morphology
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Numerical simulation of the nonlinear evolution of an exploded wire plasma

T. W. Hussey, N. F. Roderick, and R. J. Faehl

Appl. Phys. Lett. 33, 230 (1978); http://dx.doi.org/10.1063/1.90308 (3 pages) | Cited 2 times

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Numerical simulations of exploded wire plasmas have been conducted using a two‐dimensional (r‐z) magnetohydrodynamic computer code for several experimental configurations. Recent results with an aluminium wire showing the development of the nonlinear sausage instability are presented. Short‐wavelength modes are observed to grow and saturate initially, while longer wavelengths evolve later through nonlinear processes, particularly magnetic field diffusion. This behavior, as well as predicted energy output, appears to be consistent with experiment.
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52.50.Lp Plasma production and heating by shock waves and compression
52.65.-y Plasma simulation
52.35.Bj Magnetohydrodynamic waves (e.g., Alfven waves)

Crystallization kinetics of Fe‐B amorphous alloys

F. E. Luborsky and H. H. Liebermann

Appl. Phys. Lett. 33, 233 (1978); http://dx.doi.org/10.1063/1.90309 (2 pages) | Cited 40 times

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Amorphous Fe‐B ribbons with 72‐88 a/o Fe were prepared by melt‐spinning. The inception of crystallization and the growth of crystals was determined by differential scanning calorimetry. The activation energy, ΔE, and the pre‐exponential constant, A, for both the inception of crystallization and the peak in the crystallization exotherm are independent of composition from 72‐82 a/o Fe. ΔE and A steadily decline as the Fe content is increased from 82 to 88 a/o Fe. The concurrence of the ΔE and A values for the inception of crystallization and for the peak in the crystallization exotherm suggests that the same diffusion mechanism is controlling the kinetics in both periods. This compositional dependence of constants in the Arrhenius relation is attributed to decreased filling of holes by B in the Bernal‐like structure as the Fe content increases.
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81.05.Kf Glasses (including metallic glasses)
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
64.70.K- Solid-solid transitions
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Heteroepitaxy of deposited amorphous layer by pulsed electron‐beam irradiation

S. S. Lau, W. F. Tseng, M‐A. Nicolet, J. W. Mayer, J. A. Minnucci, and A. R. Kirkpatrick

Appl. Phys. Lett. 33, 235 (1978); http://dx.doi.org/10.1063/1.90310 (3 pages) | Cited 15 times

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We demonstrate that a single short pulse of electron irradiation of appropriate energy is capable of recrystallizing epitaxially an amorphous Ge layer deposited on either 〈100〉 or 〈111〉 Si single‐crystal substrate. The primary defects observed in the 〈100〉 case were dislocations, whereas stacking faults were observed in 〈111〉 samples.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
68.55.-a Thin film structure and morphology
61.72.-y Defects and impurities in crystals; microstructure

High‐efficiency p+‐n‐n+ back‐surface‐field silicon solar cells

J. G. Fossum and E. L. Burgess

Appl. Phys. Lett. 33, 238 (1978); http://dx.doi.org/10.1063/1.90311 (3 pages) | Cited 24 times

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The design and fabrication of high‐efficiency p+‐n‐n+ back‐surface‐field silicon solar cells are described. The fabrication process has been developed to yield maximum attainable carrier lifetimes (∼0.7 msec) in the base region of the cell, thereby allowing the back n‐n+ junction to effectively enhance the cell performance. A surprising conclusion drawn from a study of the device physics supporting the experimental development of the cell is that the front‐surface recombination velocity controls the recombination in the emitter. That is, the bulk p+ emitter is ’’transparent’’ to minority‐carrier (electron) flow. The recognition of the significance of the front silicon surface has led to process modifications that result in improvements in both the short‐circuit current density and the open‐circuit voltage of the cell. With these improvements, the cells exhibit AMl conversion efficiencies of nearly 17%. The fabrication process is reliable and reproducible with exceptionally high yield.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling

Picosecond pulse generation with a cw GaAlAs laser diode

P.‐T. Ho, L. A. Glasser, E. P. Ippen, and H. A. Haus

Appl. Phys. Lett. 33, 241 (1978); http://dx.doi.org/10.1063/1.90312 (2 pages) | Cited 71 times

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We report the generation of 20‐ps optical pulses at microwave repetition rate from a GaAlAs double‐heterostructure diode operating cw at room temperature. The diode is operated in an external optical resonator and is actively modulated at 3 GHz. The pulses are measured by autocorrelation using SHG in LiIO3. They are the shortest pulses ever reported for a cw laser diode.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Ultralinear bistable electro‐optic polarization modulator

Albert Feldman

Appl. Phys. Lett. 33, 243 (1978); http://dx.doi.org/10.1063/1.90313 (3 pages) | Cited 7 times

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An optical device utilizing optical feedback has been constructed with a Pockels cell and polarizing components. Two modes of operation of the device are demonstrated. Both modes exhibit optical bistability. It is demonstrated that in one mode of operation the nonlinear dependence of the output intensity as a function of an input optical or electrical signal can be made arbitrarily small compared to the linear dependence.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Hp Optical processors, correlators, and modulators
07.60.Fs Polarimeters and ellipsometers
78.20.Jq Electro-optical effects

The influence of bulk nonradiative recombination in the wide band‐gap regions of molecular beam epitaxially grown GaAs‐AlxGa1−xAs DH lasers

W. T. Tsang

Appl. Phys. Lett. 33, 245 (1978); http://dx.doi.org/10.1063/1.90314 (4 pages) | Cited 31 times

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It is shown that bulk nonradiative recombination near the heterojunctions in the wide‐band‐gap regions is probably an important contributor to the higher threshold current densities of the best state‐of‐the‐art molecular beam epitaxial GaAs‐AlxGa1−xAs DH lasers over similar geometry liquid‐phase epitaxial lasers. This recombination probably is at least part of the cause of the large recombination velocity (measured as interfacial recombination velocity) in molecular beam epitaxial heterostructures.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.20.-r Electron states at surfaces and interfaces
68.55.-a Thin film structure and morphology

Characteristics of the electron‐beam‐controlled XeF laser

L. F. Champagne and N. W. Harris

Appl. Phys. Lett. 33, 248 (1978); http://dx.doi.org/10.1063/1.90315 (3 pages) | Cited 2 times

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Output power and efficiency for e‐beam‐controlled operation which is comparable to e‐beam‐pumped operation is reported. Under optimum conditions laser enchancements of 3.2 : 1 can be achieved in the presence of an applied electric field at an overall efficiency of ∼1.8%. In this mode of operation greater than 75% of the input energy to the gas is supplied by the sustainer. The concentration of NF3 is the most sensitive parameter for maintaining maximum output power, efficiency, and stable operation.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optically pumped GaAs lasers with acoustic distributed feedback

M. Yamanishi, M. Ameda, K. Ishii, T. Kawamura, K. Tsubouchi, and N. Mikoshiba

Appl. Phys. Lett. 33, 251 (1978); http://dx.doi.org/10.1063/1.90316 (3 pages) | Cited 2 times

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Experiments on a two‐dimensional acoustic distributed feedback (ADFB) laser are described. A set of distributed Bragg reflectors (DBR’s) were formed on a GaAs crystal which was optically pumped at liquid‐nitrogen temperature and an surface acoustic wave (SAW) at a frequency around 1.2 GHz was injected into the planar region between the DBR’s. We observed the oscillation of the two‐dimensional ADFB modes. The SAW power, needed for the onset of the oscillation of the modes, was about 5 mW under the present experimental condition. Some discussions on its applications are briefly described.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
42.79.Dj Gratings

Growth of metastable InSb1−xBix thin films by multitarget sputtering

J. L. Zilko and J. E. Greene

Appl. Phys. Lett. 33, 254 (1978); http://dx.doi.org/10.1063/1.90317 (3 pages) | Cited 18 times

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Metastable solid‐solution polycrystalline InSb1−xBix films with InBi concentrations up to ∼12 mole% have been grown by multitarget sputtering. This exceeds the solid‐solubility limit of 2.6 mole% InBi reported for melt‐grown bulk InSb1−xBix. The films were deposited on substrates which rotated through separate InSb and Bi discharges maintained at an Ar pressure of 15 mTorr. The relative target voltages were used to control the composition of the deposited films and were chosen such that the deposition rate was always less than a monolayer per target pass. The film growth temperatures investigated were 135 and 165 °C and a (110) preferred orientation was obtained in films grown on Corning 7059 glass substrates. All solid‐solution films were stoichiometric within the accuracy of our electron microprobe, ∼0.5 at.%. The incorporation probability of Bi was found to decrease with increasing Bi impingement flux and with increasing growth temperature. The films were n type with a net room‐temperature carrier concentration increasing monotonically from 1017 to 1018 cm−3 with increasing InBi concentration. Precipitation of metallic Bi was observed in films containing greater than 12 mole% InBi.
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68.55.-a Thin film structure and morphology
64.75.-g Phase equilibria
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Photoluminescence observation of swirl defects and gettering effects in silicon at room temperature

Hisao Nakashima and Yasuhiro Shiraki

Appl. Phys. Lett. 33, 257 (1978); http://dx.doi.org/10.1063/1.90318 (2 pages) | Cited 6 times

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Swirl defects are nondestructively observed in silicon using a photoluminescence profile taken at room temperature. A precise geometrical correspondence between the photoluminescence profile and swirl pattern is obtained. High photoluminescence intensity spots correspond to low defect density regions and vice versa. The usefulness of this method for evaluating silicon crystals is also confirmed by observing the gettering effects in oxidized epitaxial wafers where the back surface is ground.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.40.Fy Semiconductors

New technique for identification of deep‐level trap emission to indirect conduction minima in GaAs

A. Majerfeld and P. K. Bhattacharya

Appl. Phys. Lett. 33, 259 (1978); http://dx.doi.org/10.1063/1.90325 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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A new analysis of the C‐V characteristics of the depletion region of a Schottky barrier in the presence of deep‐level traps is presented which yields the absolute position of the energy level in the energy band diagram. It is found that for the commonly observed 0.830±0.005 eV electron trap in VPE GaAs, the level is located at 0.543 eV (240 K) and 0.537 eV (120 K) below the Γ conduction minimum. It is shown that this level emits electrons to the L minima and, that relative to these minima, exhibits a zero temperature coefficient. The capture cross section for this center is σ∞= (1.8±0.4) ×10−14 cm2 and has a zero activation energy over the temperature interval 120–240 K.
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78.40.Fy Semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
73.30.+y Surface double layers, Schottky barriers, and work functions

High‐temperature superconducting tape via the amorphous state

C. C. Tsuei

Appl. Phys. Lett. 33, 262 (1978); http://dx.doi.org/10.1063/1.90326 (2 pages) | Cited 2 times

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A novel approach to preparing ductile high‐Tc and high‐Hc2 superconducting composite tape via the amorphous state is described. This new process, successfully applied to ’’β‐W’’ Nb3Ge and V3Si, makes full use of the superior mechanical properties characteristic of the amorphous metallic state. Both of these high‐Tc materials are difficult to fabricate into tape or wire by conventional techniques.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
85.25.-j Superconducting devices
74.25.-q Properties of superconductors
62.20.F- Deformation and plasticity

Critical currents in sputtered PbMo6S8

Samuel A. Alterovitz, John A. Woollam, Lee Kammerdiner, and Huey‐Lin Luo

Appl. Phys. Lett. 33, 264 (1978); http://dx.doi.org/10.1063/1.90327 (3 pages) | Cited 9 times

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Critical currents in sputtered Chevrel‐phase lead molybdenum sulphide have been measured at several temperatures as a function of applied magnetic field up to 19 T. We find a critical current density of ∼5×107 A/m2 at 15 T and 1.8 K, and the effective upper critical field was estimated to be 30 T. The pinning force at low fields was found to be dependent on the amount of free lead.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors

Magnetostatic forward volume wave reflection by a shallow groove on a YIG film

J. P. Parekh and H. S. Tuan

Appl. Phys. Lett. 33, 267 (1978); http://dx.doi.org/10.1063/1.90328 (3 pages) | Cited 2 times

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A field theory for the magnetostatic forward volume wave (MSFVW) reflectivity of a single shallow groove etched on top of an epitaxial YIG film is presented. The groove reflectivity is found to be significantly large considering that the groove is surface localized and shallow.
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68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
43.35.Ns Acoustical properties of thin films
43.35.Pt Surface waves in solids and liquids
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