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15 Aug 1978

Volume 33, Issue 4, pp. 273-367

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Additive coloration of sapphire

K. H. Lee and J. H. Crawford

Appl. Phys. Lett. 33, 273 (1978); http://dx.doi.org/10.1063/1.90362 (3 pages) | Cited 51 times

Online Publication Date: 8 August 2008

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F‐type centers have been introduced in to single crystals of α‐Al2O3 by heating them at 2000 °C in a graphite crucible under strongly reducing conditions. This treatment produces results similar to additive coloration in that anion vacancies charge compensated by electrons are introduced as demonstrated by the presence of a 6.1‐eV optical absorption band after heating. Although the same band can be created by high‐energy‐particle bombardment; by contrast those resulting from this additive coloration procedure are very stable against thermal annealing. Annealing above 1400 °C in air is necessary to produce a decrease in the 6.1‐eV‐band amplitude. The 6.1‐eV band has been related to the F center in our previous study. This study further substantiates this model.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
71.55.Ht Other nonmetals

New electrothermo‐optic effect in a certain smectic liquid crystal with a pleochroic dye added

C. Tani and T. Ueno

Appl. Phys. Lett. 33, 275 (1978); http://dx.doi.org/10.1063/1.90363 (3 pages) | Cited 2 times

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A new electrothermo‐optic effect is described in a certain smectic liquid crystal with a pleochroic dye added. The thermally induced optical storage state in this mode consists of a mosaic texture. It does not show light scattering but has excellent coloration. The erasure of this state is made by the use of a field‐assisted thermal process.
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61.30.-v Liquid crystals
42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks

Effect of preacceleration on intense ion‐beam transmission efficiency

J. H. Whealton, C. C. Tsai, W. K. Dagenhart, W. L. Gardner, H. H. Haselton, J. Kim, M. M. Menon, P. M. Ryan, D. E. Schechter, and W. L. Stirling

Appl. Phys. Lett. 33, 278 (1978); http://dx.doi.org/10.1063/1.90364 (2 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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Utilization of a preacceleration potential to accelerate ions before they reach the emission aperture results in a substantial increase in the transmission efficiency. For an intense modified duoPIGatron focused multibeamlet (1799 apertures) 22‐cm‐diam ion source, the total transmission efficiency for beam power through an aperture 20×25 cm located 4.10 m downstream increased 30%. This result is in agreement with a previous solution to the appropriate two‐dimensional Poisson‐Vlasov equation for ions extracted from a plasma.
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41.75.Ak Positive-ion beams
41.75.Cn Negative-ion beams
29.25.Lg Ion sources: polarized
29.25.Ni Ion sources: positive and negative
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Anomalous plasma resistivity in prepulsed flashlamp discharges

A. Marotta and R. M. O. Galvão

Appl. Phys. Lett. 33, 280 (1978); http://dx.doi.org/10.1063/1.90340 (2 pages) | Cited 4 times

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It is shown that the V‐i characteristic of discharges in flashlamps operating in the prepulsed mode at high current densities follows the relationship V=K0i0.85. This result is interpreted in terms of the Sagdeev‐Galeev anomalous resistivity due to current‐driven ion‐acoustic turbulence.
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52.25.Fi Transport properties
52.80.Dy Low-field and Townsend discharges
52.35.Dm Sound waves
52.80.-s Electric discharges

Axial laser heating of small‐diameter theta‐pinch plasmas

A. L. Hoffman, D. D. Lowenthal, and E. A. Crawford

Appl. Phys. Lett. 33, 282 (1978); http://dx.doi.org/10.1063/1.90365 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Small 5‐mm‐diam high‐density 3×1017 cm−3 ϑ‐pinch plasma columns 1‐m long have been heated by intense long‐wavelength laser radiation (10 μ) along their entire length. Refractive beam trapping has been achieved when laser heating begins during or before the ϑ‐pinch implosion. Plasma temperatures have been increased from under 2 eV to maximum values of between 30 and 90 eV, in agreement with a MHD laser heating code.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)

Generalized relativistic Brillouin theory

M. Y. Wang

Appl. Phys. Lett. 33, 284 (1978); http://dx.doi.org/10.1063/1.90366 (3 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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The Brillouin theory is generalized to an infinitely long vacuum transmission line of arbitrary cross section. It is shown that the equation describing the system can be reduced to a simple Laplace equation. A general expression for the total current is shown to be inversely proportional to the characteristic impedance. An analytical example is presented in the text.
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41.75.Fr Electron and positron beams
52.80.Vp Discharge in vacuum

Laser‐beam annealing of heavily damaged implanted layers on silicon

J. C. Muller, A. Grob, J. J. Grob, R. Stuck, and P. Siffert

Appl. Phys. Lett. 33, 287 (1978); http://dx.doi.org/10.1063/1.90367 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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The behavior during annealing of heavily doped silicon layers obtained by a high‐current‐density ion implantation, realized by discharge in BF3 atmosphere, is investigated. The annealing is performed by a laser pulse and the surface layers are studied by Rutherford backscattering, SIMS, and conductivity measurements. Comparisons with thermal annealing show the advantage of using laser pulses to restore the original crystallinity.
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61.80.Jh Ion radiation effects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
79.20.Ds Laser-beam impact phenomena

An alternative marker experiment in the formation of Mo and W silicides

J. Baglin, F. d’Heurle, and S. Petersson

Appl. Phys. Lett. 33, 289 (1978); http://dx.doi.org/10.1063/1.90341 (2 pages) | Cited 33 times

Online Publication Date: 8 August 2008

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A novel diffusion ’’marker’’ has been used in the backscattering study of the formation of Mo and W silicide films. Because of their closely similar crystallographic and chemical characteristics, Mo and W may be regarded as equivalent atoms in a diffusion process. Hence, in the formation of WSi2 and MoSi2 by interaction of a bilayer film of W+Mo with substrate Si, the interface between the W and Mo (observable by backscattering) becomes a ’’marker’’ to permit identification of the moving species (Si at T<1000 °C).
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Refractive‐index dispersion of garnet films derived from accurate measurement of film thickness

M. J. Sun

Appl. Phys. Lett. 33, 291 (1978); http://dx.doi.org/10.1063/1.90342 (3 pages) | Cited 11 times

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Refractive‐index dispersion of magnetic garnet films of composition (YSmLuCa)3(GeFe)5O12 is reported in a wavelength range of 0.55–1.5 μ. The dispersion was calculated from the film’s optical interference data and thickness value which was accurately determined by the technique of thin‐film optical waveguide measurement. The calculated index values at the interference fringe locations were fitted to a two‐term Sellmeier formulation. The accuracy was estimated to be better than 0.3%.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
75.20.Ck Nonmetals
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Infrared excitation spectrum of thallium‐doped silicon

Walter Scott and J. L. Schmit

Appl. Phys. Lett. 33, 294 (1978); http://dx.doi.org/10.1063/1.90343 (2 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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The excitation spectrum of thallium‐doped silicon has been measured in crystals doped to a level of 5×1016 Tl/cm3. The spectrum is characteristic of an effective‐mass‐like acceptor with an optical ionization energy of 0.246 meV. The peak optical cross section was estimated to be 2.6×10−17 cm2.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Combustor‐driven CO chemical laser

R. J. Richardson and C. E. Wiswall

Appl. Phys. Lett. 33, 296 (1978); http://dx.doi.org/10.1063/1.90344 (3 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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Operation of the first supersonic combustor‐driven purely chemical CO laser is reported. The combustor is fueled with NF3‐CH4‐H2‐CS2 and produces a mixture of HF, N2, CS, CS2, and S which is mixed with dry air and N2O during a supersonic expansion into the laser cavity. A chain reaction involving CS and O2 is initiated by the S atoms and produces CO with a non‐Boltzmann vibrational‐rotational energy‐level population distribution. The laser produces 450 W of closed‐cavity power as determined by mirror calorimetry.
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42.55.Ks Chemical lasers
82.33.Vx Reactions in flames, combustion, and explosions
78.60.Ps Chemiluminescence

Generation of time‐reversed optical wave fronts by backward‐wave photon echoes

N. S. Shiren

Appl. Phys. Lett. 33, 299 (1978); http://dx.doi.org/10.1063/1.90345 (2 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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It is shown that backward‐wave photon echoes may be generated and the echo wave fronts are time reversed with respect to the first pulse of either a two‐ or three‐pulse input sequence. Some comparisons are made with the four‐wave degenerate parametric technique for generating time‐reversed wave fronts.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.30.Va Image forming and processing
42.50.-p Quantum optics

A Be p‐silicon MIS solar cell

Yasuhiro Maeda

Appl. Phys. Lett. 33, 301 (1978); http://dx.doi.org/10.1063/1.90346 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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An MIS solar cell, consisting of beryllium on p‐type silicon with an interfacial oxide layer, has been found to have good conversion efficiency and good reproducibility. Sunlight conversion efficiency appeared to be more than 9% without the use of an antireflection coating.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.60.Jt Photoelectric conversion
73.30.+y Surface double layers, Schottky barriers, and work functions

Two‐photon resonance‐enhanced third harmonic generation in deuterium chloride

M. H. Kang, V. T. Nguyen, T. Y. Chang, T. C. Damen, and E. G. Burkhardt

Appl. Phys. Lett. 33, 303 (1978); http://dx.doi.org/10.1063/1.90347 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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Two‐photon resonance‐enhanced third harmonic generation of CO2 laser radiation has been studied in DCl. The measurements of the phase‐matched third harmonic signal in a DCl‐CF4 mixture of 1 : 0.010 up to 5 atm show that the third‐order susceptibility for DCl gas is substantially larger than that for the CO gas.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
33.80.Rv Multiphoton ionization and excitation to highly excited states (e.g., Rydberg states)
33.80.Wz Other multiphoton processes

Nonlinear generation of Lyman‐alpha radiation

Rita Mahon, T. J. McIlrath, and David W. Koopman

Appl. Phys. Lett. 33, 305 (1978); http://dx.doi.org/10.1063/1.90348 (3 pages) | Cited 35 times

Online Publication Date: 8 August 2008

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Tunable narrow‐band Lyman‐alpha radiation (∼1216 Å) has been generated by frequency tripling in krypton. A near‐diffraction‐limited tunable 15‐nsec 10‐MW input at 3648 Å was used to generate ∼3.6×1011 photons (60 W) per pulse at 1216 Å. Measurements of the output as a function of gas pressure give the refractive index for krypton at 1216 Å, demonstrating its negatively dispersive character.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Fc Modulation, tuning, and mode locking

Shadow sputtered diffraction‐limited waveguide Luneburg lenses

S. K. Yao and D. B. Anderson

Appl. Phys. Lett. 33, 307 (1978); http://dx.doi.org/10.1063/1.90349 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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Thin‐film Luneburg lenses are formed by sputtering through a circular shaped mask. A series of computer simulation programs have been developed for the synthesis of the shadow mask contour to produce the necessary thin‐film lens thickness profile. Diffraction‐limited results have been obtained for guided wave optical lenses.
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42.79.Gn Optical waveguides and couplers
42.30.Kq Fourier optics
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
81.15.Cd Deposition by sputtering

Miniature Nd‐pentaphosphate laser with bonded mirrors side pumped with low‐current‐density LED’s

J.‐P. Budin, M. Neubauer, and M. Rondot

Appl. Phys. Lett. 33, 309 (1978); http://dx.doi.org/10.1063/1.90350 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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A laser made of a 1‐cm‐long Nd0.75La0.25P5O14 crystal with bonded mirrors has been side pumped with two arrays of light‐emitting Al0.1Ga0.9As planar diodes in a double cylindrical‐elliptical cavity. Pulsed operation (0.6 ms) is obtained at −13.5 °C, and cw lasing at −49 °C, with LED current densities of 700 and 270 A cm−2, respectively.
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42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers

Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfaces

Haruo Nagai and Yoshio Noguchi

Appl. Phys. Lett. 33, 312 (1978); http://dx.doi.org/10.1063/1.90351 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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The reversible change in photoluminescence intensity with change in gaseous ambients (N2, Ar, H2, O2, H2O, and vacuum) from a InP cleaved (110) surface and the irreversible change in photoluminescence from a GaAs cleaved (110) surface when exposed to oxygen were observed at room temperature. These phenomena imply that adsorbed N2, H2, Ar, H2O, and O2 gases can be exchanged reversibly on the InP surface, and the surface recombination velocity changes reversibly with the adsorbed gas species. On the other hand, oxidation proceeds rapidly and irreversibly on GaAs cleaved surfaces.
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78.40.Fy Semiconductors
81.65.-b Surface treatments
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

M. A. Pollack, R. E. Nahory, J. C. DeWinter, and A. A. Ballman

Appl. Phys. Lett. 33, 314 (1978); http://dx.doi.org/10.1063/1.90352 (3 pages) | Cited 44 times

Online Publication Date: 8 August 2008

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A two‐phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice‐matched compositions, 0⩾y<1, 0?x<0.47. Liquid and solid compositions, distribution coefficients, and band‐gap data which may be used to design specific devices are presented.
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68.55.-a Thin film structure and morphology
81.10.Dn Growth from solutions
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
64.70.D- Solid-liquid transitions

Insulating carbon coating on (AlGa)As DH laser facets

Takao Furuse, Tohru Suzuki, Shohei Matsumoto, Katsuhiko Nishida, and Yasuo Nannichi

Appl. Phys. Lett. 33, 317 (1978); http://dx.doi.org/10.1063/1.90353 (2 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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Insulating carbon films were developed to prevent facet deterioration of (AlGa)As DH lasers. Chemically durable optically transparent carbon film was obtained by a carbon ion‐beam deposition technique. Stable lasing operations have been obtained with carbon coated lasers for over 6000 h.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.-a Thin film structure and morphology
73.61.Ng Insulators

The optical absorption edge of single‐crystal AlN prepared by a close‐spaced vapor process

P. B. Perry and R. F. Rutz

Appl. Phys. Lett. 33, 319 (1978); http://dx.doi.org/10.1063/1.90354 (3 pages) | Cited 100 times

Online Publication Date: 8 August 2008

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We have prepared several thicknesses of ∼1 cm by ∼1 cm epitaxial single crystals of AlN with a ’’high temperature (∼1800 °C) close‐spaced vapor transport’’ technique. These crystals have been grown both on (0112) and (0001) sapphire wafers. The optical absorption edge is measured at 300 K and for the first time at low temperature (5 K). This data is parametrized to include both reflection losses due to scattering off surface imperfections and contributions from impurity absorption bands. This parametrization technique is used to determine the band gap and the nature, direct or indirect, of the absorption edge. A value of 6.28 eV was found to be the best value of Eg(5 K) and the gap was found to be direct.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.10.Bk Growth from vapor

Elongation of pulsed oscillation of an H2O laser

G. Kido and N. Miura

Appl. Phys. Lett. 33, 321 (1978); http://dx.doi.org/10.1063/1.90355 (3 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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The duration time of pulsed oscillation of an H2O laser was considerably elongated at 16.93, 27.97, and 36.60 μm, by adding large amount of helium gas to the discharge. The admixture of He was also effective in enhancing the output power.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers

High‐efficiency stimulated Raman scattering/dye radiation source

C. David Decker

Appl. Phys. Lett. 33, 323 (1978); http://dx.doi.org/10.1063/1.90356 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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The development of a high peak and average power stimulated Raman scattering (SRS) source with a dye amplifier is described. Emission from 505 to 771 nm is obtained using 532‐nm radiation from a frequency‐doubled Nd : YAG laser as the optical pump. Dimethyl sulfoxide (DMSO) is found to be a very efficient SRS medium, and produces 40% energy conversion from 532 to 630 nm at 10 pulses/sec. Use of a dye amplifier increases energy conversion efficiency to 60%. Mixtures of DMSO and d‐DMSO are found to emit the I and II Stokes lines of each material, plus a ’’mixed’’ mode line at 727 nm. SRS is also shown to be a limiting phenomenon in the power scaling of laser‐pumped dye lasers.
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78.30.C- Liquids
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Mv Dye lasers
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Inversion of the Na resonance line by selective photodissociation of NaI

J. C. White

Appl. Phys. Lett. 33, 325 (1978); http://dx.doi.org/10.1063/1.90357 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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This letter reports the inversion and intense superfluorescent emission of the Na resonance line by selective photodissociation of NaI. The fifth harmonic of a Q‐switched Nd : YAG laser at 2128 Å was used to photodissociate NaI to the unbound state Na(3p 2P)+I(5p5 2P3/2). Superfluorescence at the 5896‐Å resonance line was observed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.80.Gj Diffuse spectra; predissociation, photodissociation

Low‐current proton‐bombarded (GaAl)As double‐heterostructure lasers

J. C. Bouley, Ph. Delpech, J. Charil, G. Chaminant, J. Landreau, and J. P. Noblanc

Appl. Phys. Lett. 33, 327 (1978); http://dx.doi.org/10.1063/1.90358 (4 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Low‐current cw stripe double‐heterostructure (DH) lasers have been realized using a shallow proton‐bombardment technique; unlike usual proton DH lasers they involve a resistive p (GaAl)As confinement layer and a rather highly doped GaAs active region both to reduce spreading current and stripe injected carrier outdiffusion. Threshold currents are on the order of 50 mA for a 12‐μm‐wide by 200‐μm‐long cavity.
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42.55.Px Semiconductor lasers; laser diodes
61.80.Jh Ion radiation effects
42.60.Fc Modulation, tuning, and mode locking
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