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15 Aug 1978

Volume 33, Issue 4, pp. 273-367

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Deep level associated with the slow degradation of GaAlAs DH laser diodes

H. Imai, K. Isozumi, and M. Takusagawa

Appl. Phys. Lett. 33, 330 (1978); http://dx.doi.org/10.1063/1.90359 (3 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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The deep‐level emission at 1.0 eV is analyzed to be associated with the slow degradation of GaAlAs DH laser diodes. The intensity of this deep‐level emission increases at the same rate as the increase in the threshold current during the slow degradation. The carrier lifetime does not change correspondingly to the increase in the threshold current. This deep level is considered to act as the photon‐absorption center to cause the increase in the threshold current.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.60.Fi Electroluminescence
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Humidity‐sensitive threshold switching in silver–boron nitride–silicon–aluminum sandwiches

Tadamasa Kimura, Katsumi Yamamoto, and Shigemi Yugo

Appl. Phys. Lett. 33, 333 (1978); http://dx.doi.org/10.1063/1.90360 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Conduction of polycrystalline boron nitride films in a form of a Ag‐BN‐Si‐Al sandwich has been investigated. After electroforming, the samples exhibit threshold switching in atmospheres which contain moisture. The switching is well explained by Dearnaley’s filamentary model.
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72.20.Ht High-field and nonlinear effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
72.60.+g Mixed conductivity and conductivity transitions

Evidence for impact‐ionized electron injection in substrate of n‐channel MOS structures

Junichi Matsunaga and Susumu Kohyama

Appl. Phys. Lett. 33, 335 (1978); http://dx.doi.org/10.1063/1.90361 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Impact‐ionization current during saturation mode operation is widely known in MOS devices. Although not noted in previous work, minority carriers also may be observed in the substrate, together with hole current. These minority carriers can degrade the MOS depletion layer lifetime, thus limiting the performance of MOS dynamic devices. A series of experiments utilizing the C‐t method, the MOS capacitor surface potential measurement, and the charge‐coupled device (CCD) is described, which provides evidence for electrically generated electrons in the substrate of n‐channel MOS structures.
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79.20.Kz Other electron-impact emission phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

p‐n junction formation in boron‐deposited silicon by laser‐induced diffusion

J. Narayan, R. T. Young, R. F. Wood, and W. H. Christie

Appl. Phys. Lett. 33, 338 (1978); http://dx.doi.org/10.1063/1.90368 (3 pages) | Cited 62 times

Online Publication Date: 8 August 2008

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A technique for p‐n junction formation in silicon, based on deposition of boron on silicon at room temperature followed by laser irradiation is described. Transmission electron microscopy and electrical measurements indicate that as a result of the laser irradiation the boron is dissolved in the silicon and becomes electrically active. Diode characteristics of p‐n junctions produced by this technique are quite good. The dopant profile distribution has been obtained using secondary ion mass spectrometry and is in qualitative agreement with simplified theoretical calculations.
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61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
84.60.Jt Photoelectric conversion
79.20.Ds Laser-beam impact phenomena

The effect of interface arsenic domains on the electrical properties of GaAs MOS structures

R. P. H. Chang, T. T. Sheng, C. C. Chang, and J. J. Coleman

Appl. Phys. Lett. 33, 341 (1978); http://dx.doi.org/10.1063/1.90329 (2 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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Postgrowth annealing of plasma grown GaAs oxides in N2 and H2 result in very different electrical behaviors. By examining cross‐sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide‐semiconductor interface plays a significant role in determining the MOS characteristics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Ng Insulators

Ion‐bombardment‐enhanced diffusion during the growth of sputtered superlattice thin films

A. H. Eltoukhy and J. E. Greene

Appl. Phys. Lett. 33, 343 (1978); http://dx.doi.org/10.1063/1.90330 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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A technique is presented for determining the enhancement in solid‐state diffusion caused by low‐energy ion bombardment. In this technique, superlattice films are grown under varying conditions of ion bombardment and the amplitude of the resulting composition modulation wave is determined by analyzing x‐ray diffraction satellite peaks surrounding the central Bragg peaks. The amplitude is in turn related to the enhanced diffusion coefficient D∗ (x) which may be expressed as D∗0 exp(−x/δ) where δ is a characteristic diffusion length of the ion‐bombardment‐produced defects. This approach was confirmed experimentally using InSb/GaSb superlattice structures grown by multitarget sputtering, each sample having equilayer thicknesses between 12 and 30 Å. D∗ was found to increase as the sputtering pressure was decreased. Measured values of D∗ averaged over the enhanced diffusion region were on the order of 10−17 cm2/sec compared to a thermal interdiffusion coefficient of approximately 10−22 cm2/sec at the film growth temperature of 250 °C.
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61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
66.30.-h Diffusion in solids
81.15.Cd Deposition by sputtering

Q‐switched ruby laser alloying of Ohmic contacts on gallium arsenide epilayers

Shlomo Margalit, Dan Fekete, David M. Pepper, Chien‐Ping Lee, and Amnon Yariv

Appl. Phys. Lett. 33, 346 (1978); http://dx.doi.org/10.1063/1.90331 (2 pages) | Cited 16 times

Online Publication Date: 8 August 2008

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Ohmic contacts of AuGe have been produced on GaAs epilayers by laser alloying. The contacts possess morphological and electrical properties which are superior to those formed by conventional alloying.
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73.40.Cg Contact resistance, contact potential
81.40.Rs Electrical and magnetic properties related to treatment conditions
79.20.Ds Laser-beam impact phenomena
42.60.-v Laser optical systems: design and operation

Elimination of stacking‐fault formation in silicon by preoxidation annealing in N2/HCl/O2 mixtures

Takeshi Hattori and Toshiharu Suzuki

Appl. Phys. Lett. 33, 347 (1978); http://dx.doi.org/10.1063/1.90332 (3 pages) | Cited 4 times

Online Publication Date: 8 August 2008

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The formation of oxidation‐induced stacking faults in the surface regions of silicon wafers can be eliminated by a short‐period anneal in a dry nitrogen atmosphere containing small concentrations of HCl and oxygen in the same furnace where subsequent oxidation will be carried out. This preoxidation anneal results in the prevention of fault nucleation without causing any problem like a nitridation reaction, an etch‐pit formation, and a blotchy appearance on the silicon surface.
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61.72.Nn Stacking faults and other planar or extended defects
81.65.-b Surface treatments

Oxide thickness effects on electron scatterings at a thermally grown Si‐SiO2 interface

A. Yagi and S. Kawaji

Appl. Phys. Lett. 33, 349 (1978); http://dx.doi.org/10.1063/1.90333 (2 pages) | Cited 13 times

Online Publication Date: 8 August 2008

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The effective electron mobility of N‐channel MOSFET’s with different gate oxide thickness has been measured at 4.2 K as a function of electron density. An increase in the peak effective mobility is observed as the oxide thickness is increased. It is found that the peak mobility is determined by the scattering mechanism whose scattering probability is independent of electron density. To describe these experimental results, the scattering by a short‐ranged potential has been assumed and discussed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.25.+i Surface conductivity and carrier phenomena

Avalanche breakdown voltages for III‐V semiconductors

J. R. Hauser

Appl. Phys. Lett. 33, 351 (1978); http://dx.doi.org/10.1063/1.90334 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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Breakdown voltages have been calculated for abrupt p‐n junctions in the nine III‐V semiconductors of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. Parameters needed in the breakdown voltage calculations such as the mean free path for scattering and the average phonon loss have been evaluated using a Monte Carlo transport calculation at electric field values characteristic of breakdown.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects

Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon‐hydrogen alloys

M. Tanielian, H. Fritzsche, C. C. Tsai, and E. Symbalisty

Appl. Phys. Lett. 33, 353 (1978); http://dx.doi.org/10.1063/1.90335 (4 pages) | Cited 62 times

Online Publication Date: 8 August 2008

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The conductance of amorphous Si films produced by glow discharge of SiH4 is found to be very sensitive to various adsorbates such as water, ammonia, and dimethyl ether. Films exposed to air and light must first be heated to 150 °C in vacuum to remove adsorbed moisture and the reversible photoelectronic effect discovered by Staebler and Wronski. When exposed to adsorbates, the conductance of undoped films (about 0.36 μm thick) decreases by several orders of magnitude; the conductance of lightly phosphorus‐doped films first increases rapidly and then slowly decreases to a saturation value which lies above the conductance of the annealed films. Heating in vacuum at 150 °C restores the original values. The results indicate that the conductance changes produced by light and by adsorbates are two separate processes, the latter being a surface effect.
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73.30.+y Surface double layers, Schottky barriers, and work functions
72.80.Ng Disordered solids
71.23.-k Electronic structure of disordered solids

Generation of coherent tunable Josephson radiation at microwave frequencies with narrowed linewidth

C. Varmazis, R. D. Sandell, A. K. Jain, and J. E. Lukens

Appl. Phys. Lett. 33, 357 (1978); http://dx.doi.org/10.1063/1.90336 (3 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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Coherent tunable microwave radiation (2–18 GHz) has been observed from two microbridge Josephson junctions coupled by a shunt resistor. The coherent power (∼4×10−12 W) is nearly four times the power emitted by a single junction. The linewidth of the radiation in the coherent state is one‐half that from the individual microbridges.
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74.50.+r Tunneling phenomena; Josephson effects
85.25.-j Superconducting devices

The nucleation of high‐Tc Nb3Ge in the presence of impurities

J. R. Gavaler, M. Ashkin, A. I. Braginski, and A. T. Santhanam

Appl. Phys. Lett. 33, 359 (1978); http://dx.doi.org/10.1063/1.90337 (3 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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Analyses of high‐Tc Nb3Ge films show that they all have a peak in oxygen concentration near the substrate‐film interface and that their lattice parameters in that region are abnormally large. It is proposed that high‐Tc Nb3Ge is a metastable phase which is formed via a homoepitaxial process from a large lattice parameter A15 Nb‐Ge phase. This phase near the interface is believed stable due to an expanded lattice resulting from the presence of impurities.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.25.-q Properties of superconductors
74.10.+v Occurrence, potential candidates
74.70.-b Superconducting materials other than cuprates

Observation of phase separation in a Cr‐Co‐Fe alloy (chromindur) by Mössbauer effect

M. Eibschütz, G. Y. Chin, S. Jin, and D. Brasen

Appl. Phys. Lett. 33, 362 (1978); http://dx.doi.org/10.1063/1.90338 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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Mössbauer effect measurements of 57Fe in a Cr‐Co‐Fe alloy indicate the existence of two ferromagnetic phases at room temperature. The hyperfine field of the two phases differ by ∼11%. This result implies that domain‐wall–particle interaction is responsible for the coercive force, which is a different mechanism than in some Alnico alloys.
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75.50.Bb Fe and its alloys
76.80.+y Mössbauer effect; other γ-ray spectroscopy
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Vv High coercivity materials

The nonlinear mechanism leading to polarization echoes in some powdered materials

H. P. Kunkel, S. Kupca, and C. W. Searle

Appl. Phys. Lett. 33, 364 (1978); http://dx.doi.org/10.1063/1.90339 (3 pages)

Online Publication Date: 8 August 2008

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The phase of the dynamic polarization echo with respect to the second driving pulse has been measured for several powdered materials. The mechanism for echo formation, in all the materials that were examined, was found to be an anharmonic oscillator interaction with a nonlinear amplitude‐dependent frequency.
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62.90.+k Other topics in mechanical and acoustical properties of condensed matter (restricted to new topics in section 62)
77.22.Ej Polarization and depolarization
FREE

Erratum: Fabrication of deep square wave structures with micron dimensions by reactive sputter etching

H. W. Lehmann and R. Widmer

Appl. Phys. Lett. 33, 367 (1978); http://dx.doi.org/10.1063/1.90555 (1 page) | Cited 1 time

Online Publication Date: 8 August 2008

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Abstract Unavailable
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99.10.Cd Errata
42.79.Dj Gratings
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
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