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1 Sep 1978

Volume 33, Issue 5, pp. 371-475

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Acoustic harmonic generation at unbonded interfaces and fatigue cracks

O. Buck, W. L. Morris, and J. M. Richardson

Appl. Phys. Lett. 33, 371 (1978); http://dx.doi.org/10.1063/1.90399 (3 pages) | Cited 65 times

Online Publication Date: 8 August 2008

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The generation of a second‐harmonic signal at a flat unbonded interface between two solids has been observed. This signal is caused by passage of a longitudinal acoustic wave across the interface. The harmonic amplitude depends upon the pressure applied normal to the interface and is largest close to zero pressure, as expected theoretically. The effect has also been used to detect the presence of microcracks on the surface of Al 2024, developed during fatigue.
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43.25.-x Nonlinear acoustics
62.20.M- Structural failure of materials
68.35.Gy Mechanical properties; surface strains
68.35.Iv Acoustical properties
46.50.+a Fracture mechanics, fatigue and cracks

Analog read‐only memory using gadolinium molybdate

R. A. Lemons, J. M. Geary, L. A. Coldren, and H. G. Mattes

Appl. Phys. Lett. 33, 373 (1978); http://dx.doi.org/10.1063/1.90400 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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In ferroelectric gadolinium molybdate a stable planar domain wall can be swept through the crystal by applying a voltage along the polar axis. The resulting polarization current can be used to read out analog information stored as a waveform pattern in the electrodes. Using a differential detection scheme, we have demonstrated the reproduction of 4 sec of typical speech stored with a density of 50 sec of speech per cm2.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Double‐focusing diode

Ken’ichi Takagi

Appl. Phys. Lett. 33, 376 (1978); http://dx.doi.org/10.1063/1.90401 (3 pages)

Online Publication Date: 8 August 2008

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Applying a coaxial Marx generator with the rectangular pulse across a constant load for a study of double‐focusing diodes, an important difference of the behavior between the single‐ and the double‐focusing diode is found. In order to understand its behavior more precisely, the necessity will be pointed out to take into account the anode plasma effects.
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52.80.Vp Discharge in vacuum
52.50.Dg Plasma sources
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Magnetoresistance in yttrium iron garnet

R. C. LeCraw, E. M. Gyorgy, R. Wolfe, W. A. Bonner, S. L. Blank, and W. H. Grodkiewicz

Appl. Phys. Lett. 33, 379 (1978); http://dx.doi.org/10.1063/1.90402 (2 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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The magnetoresistance of bulk and epitaxial films of doped n‐type yttrium iron garnet is reported for the first time. In (111) films a ΔR/R of −0.55% is observed as a saturating applied field H is rotated out of the (111) plane to the film normal. There is no observable change in ΔR/R as H is rotated in the (111) plane, with the current I in various directions in the (111) plane. This isotropy of ΔR/R in the (111) plane has not been observed in other ferromagnetic materials such as iron and nickel and is not understood as yet. The same isotropy in the (111) plane is also observed in bulk yttrium iron garnet. A possible use of this magnetoresistance for magnetoresistive detectors in magnetic bubble devices is discussed.
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72.20.My Galvanomagnetic and other magnetotransport effects
75.80.+q Magnetomechanical effects, magnetostriction
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Use of carbon dioxide in energy storage

Richard Williams, Richard S. Crandall, and Allen Bloom

Appl. Phys. Lett. 33, 381 (1978); http://dx.doi.org/10.1063/1.90403 (3 pages) | Cited 33 times

Online Publication Date: 8 August 2008

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We have investigated an energy‐storage cycle in which CO2 is electrochemically reduced to formic acid, HCOOH. The product can be used in several ways. By means of a catalyst, it can be converted to hydrgen for use as a fuel or raw material. We have obtained data on the efficiency of the process and analyzed the energetics.
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82.47.-a Applied electrochemistry
82.45.-h Electrochemistry and electrophoresis
89.30.-g Fossil fuels and nuclear power

A cesium plasma TELEC device for conversion of laser radiation to electric power

E. J. Britt, N. S. Rasor, G. Lee, and K. W. Billman

Appl. Phys. Lett. 33, 384 (1978); http://dx.doi.org/10.1063/1.90404 (3 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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The first tests of the thermoelectronic laser energy converter (TELEC) concept are reported. This device has been devised as a means to convert high‐average‐power laser radiation into electrical energy, a crucial element in any space laser power transmission scheme using the available high power/efficiency infrared lasers. Theoretical calculations, based upon inverse bremsstrahlung absorption in a cesium plasma, indicate internal conversion efficiency up to 50% with an overall system efficiency of 42%. Experiments reported here were made with a test cell designed to confirm the theoretical model rather than demonstrate efficiency; 10.6‐μm laser‐beam absorption was limited to ∼10−3 of the incident beam by the short absorption region. Nevertheless, confirmatory results were obtained and the conversion of absorbed radiation to electric power is estimated to be near 10%.
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52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes
42.60.-v Laser optical systems: design and operation
84.60.Ny Thermionic conversion

Formation of a copper‐oxygen‐polymer complex on polystyrene

James M. Burkstrand

Appl. Phys. Lett. 33, 387 (1978); http://dx.doi.org/10.1063/1.90405 (3 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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Previous studies have indicated an increase in the adhesion of deposited metal films to commercial polymers when additional carbon‐oxygen bonds were present on the polymer surface. In this work, we report the changes taking place on an oxygen‐treated polystyrene surface following vapor deposition of copper. We first found that atomic oxygen produces a carbon‐oxygen single bond on the polystyrene surface, with the oxygen displacing a hydrogen and either forming an OH group or cross linking two chains. In addition, this bond is strongly perturbed after vapor deposition of copper. The deposition of copper results in the formation of a copper‐oxygen‐polymer complex on the surface, the exact nature of which is still to be determined. The formation of such a complex is consistent with an increased adhesive strength of copper on oxygen‐treated polystyrene.
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73.61.At Metal and metallic alloys
73.40.Ns Metal-nonmetal contacts
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.80.Dx Analytical methods involving electronic spectroscopy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Use of a scanning cw Kr laser to obtain diffusion‐free annealing of B‐implanted silicon

A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, P. Williams, V. Deline, and C. A. Evans

Appl. Phys. Lett. 33, 389 (1978); http://dx.doi.org/10.1063/1.90386 (3 pages) | Cited 29 times

Online Publication Date: 8 August 2008

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The use of a continuous scanned Kr ion laser as a tool for annealing of boron‐implanted silicon is described. Conditions were found that produce high electrical activity and crystallinity of the implanted layer without redistribution of the boron from the as‐implanted profile.
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79.20.Ds Laser-beam impact phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
42.60.-v Laser optical systems: design and operation
61.72.-y Defects and impurities in crystals; microstructure

250‐Å linewidths with PMMA electron resist

A. N. Broers, J. M. E. Harper, and W. W. Molzen

Appl. Phys. Lett. 33, 392 (1978); http://dx.doi.org/10.1063/1.90387 (3 pages) | Cited 54 times

Online Publication Date: 8 August 2008

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25‐nm‐wide lines and spaces have been fabricated in 22.5‐nm‐thick films of PdAu (40 : 60) using electron‐beam exposure and polymethylmethacrylate (PMMA) resist. A high‐resolution scanning transmission electron microscopy (STEM) was used to expose the resist and the samples were mounted on 60‐nm‐thick Si3N4 membrane substrates. Previously, the smallest metal structures formed with a resist process were 60 nm wide with spaces between the lines several times larger than the lines. The results presented here show that 25‐nm lines can be fabricated with a center to center spacing of 50 nm.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
41.75.Fr Electron and positron beams

Annealing behavior of nitrogen‐implanted proton‐irradiated molybdenum

A. Anttila and J. Hirvonen

Appl. Phys. Lett. 33, 394 (1978); http://dx.doi.org/10.1063/1.90388 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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The irradiation effect of 0.45‐MeV protons on the solubility and diffusivity of interstitial impurities has been studied by annealing nitrogen‐implanted molybdenum samples in the temperature region 600–800 °C. The nondestructive (p,γ) resonance‐broadening method was applied as a probe for the nitrogen. Even for the low proton irradiation doses, a remarkable increase in solubility and a decrease in diffusivity were observed.
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66.30.J- Diffusion of impurities
61.80.Jh Ion radiation effects

An ion‐beam study of Sb trapping in Fe‐Ti‐Sb‐C alloys

S. M. Myers, D. M. Follstaedt, and H. J. Rack

Appl. Phys. Lett. 33, 396 (1978); http://dx.doi.org/10.1063/1.90389 (3 pages) | Cited 5 times

Online Publication Date: 8 August 2008

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Using ion‐backscattering analysis and transmission electron microscopy of ion‐implanted alloys, it is shown that TiC precipitates in Fe are effective traps for Sb. This trapping is proposed as a contributing mechanism for the reduced temper embrittlement susceptibility observed in steels containing Ti.
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66.30.J- Diffusion of impurities
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.80.Jh Ion radiation effects
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Large‐signal gain and intensity enhancement in a backward Raman amplifier

J. R. Murray, J. Goldhar, D. Eimerl, and A. Szöke

Appl. Phys. Lett. 33, 399 (1978); http://dx.doi.org/10.1063/1.90390 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Saturation effects have been investigated in a KrF laser‐pumped backward Raman amplifier using methane gas. Pump depletion of 30% with an intensity gain of 2 has been demonstrated, and the results are shown to be consistent with a simple Frantz‐Nodvik saturation treatment.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Lt Gas lasers including excimer and metal-vapor lasers

A Schottky‐barrier solar cell on sliced polycrystalline GaAs

Y. C. M. Yeh and R. J. Stirn

Appl. Phys. Lett. 33, 401 (1978); http://dx.doi.org/10.1063/1.90391 (3 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Antireflecting‐metal‐oxide‐semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 μm. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have minimal effect on short‐circuit current density. However, current‐voltage characteristics show some influence on open‐circuit voltage.
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84.60.Jt Photoelectric conversion
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects

Generation of time‐reversed waves by nonlinear refraction in a waveguide

S. M. Jensen and R. W. Hellwarth

Appl. Phys. Lett. 33, 404 (1978); http://dx.doi.org/10.1063/1.90392 (2 pages) | Cited 14 times

Online Publication Date: 8 August 2008

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See Also: Erratum | Erratum

Show Abstract
We have generated, essentially instantaneously, a time‐reversed replica (phase‐conjugate) of a monochromatic optical wave (at 6943 Å) by directing the wave into a CS2‐filled waveguide where it interacts via the third‐order nonlinear susceptibility with counterpropagating pump waves of the same frequency. This method is shown to have advantages over a similar replication process which has been observed with unguided waves in an infinite homogeneous medium.
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42.30.Va Image forming and processing
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

As‐grown CVD ZnO optical waveguides on sapphire

T. Shiosaki, S. Ohnishi, Y. Hirokawa, and A. Kawabata

Appl. Phys. Lett. 33, 406 (1978); http://dx.doi.org/10.1063/1.90393 (2 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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Optical‐waveguide loss was measured in as‐grown single‐crystalline ZnO films which were chemical‐vapor‐deposited on intermediately sputter‐deposited very thin ZnO films on sapphire substrates. The obtained minimum attenuations at 6328 Å are 18.3, 14.2, 10.7, 8.7, 4.7, 2.4, 1.5, and 0.7 dB/cm for the seventh, sixth, fifth, fourth, third, second, first, and zeroth TE modes, respectively, in a 2.57‐μm‐thick ZnO film. A strip waveguide was made of the CVD ZnO film selectively grown on an intermediately sputter‐deposited ZnO pattern on sapphire.
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42.79.Gn Optical waveguides and couplers
42.70.-a Optical materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.82.-m Integrated optics

The observation of melt carryover in the active layer of LPE GaAs/GaAlAs double‐heterostructure laser material

B. Wakefield

Appl. Phys. Lett. 33, 408 (1978); http://dx.doi.org/10.1063/1.90394 (2 pages) | Cited 6 times

Online Publication Date: 8 August 2008

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The use of a photoluminescence technique to reveal the presence of carryover in the active layer of LPE GaAs/GaAlAs double‐heterostructure laser material has enabled growth procedures to be optimized in order to produce uniform active layers.
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42.55.Px Semiconductor lasers; laser diodes
78.55.Hx Other solid inorganic materials
81.10.Fq Growth from melts; zone melting and refining
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Measurement of excited‐state‐absorption loss for Ce3+ in Y3Al5O12 and implications for tunable 5d→4f rare‐earth lasers

Ralph R. Jacobs, William F. Krupke, and Marvin J. Weber

Appl. Phys. Lett. 33, 410 (1978); http://dx.doi.org/10.1063/1.90395 (3 pages) | Cited 61 times

Online Publication Date: 8 August 2008

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Broad bandwidth 5d→4f transitions in Ce3+ have been considered for tunable laser action. In this letter, optical probe measurements of excited Ce3+ ions in Y3Al5O12 show that stimulated emission in the 550–610‐nm region is not possible at 295 K because of excited‐state absorption. Transient measurements demonstrate that part of this loss has ≈75‐ns lifetime and is associated with absorption from the lowest 5d level; a longer‐lifetime loss is also observed. The excited‐state‐absorption loss is reduced at lower temperatures.
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42.55.Rz Doped-insulator lasers and other solid state lasers
78.20.-e Optical properties of bulk materials and thin films
78.45.+h Stimulated emission
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Second‐harmonic generation at 2660 Å in BeSO4⋅4H2O

K. Kato

Appl. Phys. Lett. 33, 413 (1978); http://dx.doi.org/10.1063/1.90396 (2 pages) | Cited 1 time

Online Publication Date: 8 August 2008

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Beryllium sulfate tetrahydrate (BeSO4⋅4H2O) has been found to be phase matchable for frquency doubling of 5321‐Å radiation. The water white crystal is highly transparent from 1900 to 13 700 Å. The nonlinear optical constant was measured to be d36(BeSO4⋅4H2O) = (0.62±0.06) xd36(KD∗P).
Show PACS
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Acoustic‐emission study of defects in GaP light‐emitting diodes

T. Ikoma, M. Ogura, and Y. Adachi

Appl. Phys. Lett. 33, 414 (1978); http://dx.doi.org/10.1063/1.90397 (2 pages)

Online Publication Date: 8 August 2008

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Acoustic emission was detected during the degradation of GaP : N light‐emitting diodes and was shown to have a correlation with the generation of dislocations near the p‐n‐junction plane. This technique provides us with a powerful tool to investigate dislocation motion on real time and in a nondestructive way.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
85.60.-q Optoelectronic devices

1.0–1.4‐μm high‐speed avalanche photodiodes

H. D. Law, L. R. Tomasetta, K. Nakano, and J. S. Harris

Appl. Phys. Lett. 33, 416 (1978); http://dx.doi.org/10.1063/1.90398 (2 pages) | Cited 15 times

Online Publication Date: 8 August 2008

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High‐speed high‐quantum‐efficiency avalanche photodiodes (APD’s) are required in the 1.0–1.4‐μm wavelength range in order to exploit the superior optical fibers now available at these wavelengths. The GaAlSb heterojunction APD’s reported here have external quantum efficiencies of 60% (without antireflection coatings), risetimes of 60 ps, and pulse widths (FWHM) of 120 ps with no evidence of a ’’back porch’’. Uniform high‐speed avalanche gains of 20 have been achieved.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Determination of the recombination coefficient in CO2 laser discharges

Ch. Homann, H. Hübner, and W. Bötticher

Appl. Phys. Lett. 33, 417 (1978); http://dx.doi.org/10.1063/1.90406 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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The effective recombination coefficient γ∗ in a self‐sustained CO2 laser discharge at a pressure of 1.3 bar is determined from a rate equation for the electron density using experimental values of the discharge current and voltage. It is found that γ∗ depends strongly on the electric field strength as well as on the electron density.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
52.80.Dy Low-field and Townsend discharges
34.80.Gs Molecular excitation and ionization
52.20.Fs Electron collisions

Intense lasing in discharge excited noble‐gas monochlorides

Robert C. Sze and Peter B. Scott

Appl. Phys. Lett. 33, 419 (1978); http://dx.doi.org/10.1063/1.90407 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Intense lasing of XeCl (180 mJ) and KrCl (100 mJ) occurs using HCl as the halogen doner. The low energies obtained from e‐beam devices are believed to result from Ar+2 molecular‐ion absorption. Very long XeCl lasing lifetime with respect to gas fill is observed; this is postulated to be the result of photodissociation of Cl2 due to the laser wavelength which, in turn, results in enhanced rates for the formation of HCl.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.-t Molecular spectra
52.80.-s Electric discharges

Open‐circuit voltage of vertical‐junction photovoltaic devices at high intensity

Thomas W. Ekstedt, John E. Mahan, Robert I. Frank, and Roy Kaplow

Appl. Phys. Lett. 33, 422 (1978); http://dx.doi.org/10.1063/1.90408 (2 pages) | Cited 2 times

Online Publication Date: 8 August 2008

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Vertical single‐junction silicon photovoltaic cells show a steady increase in open‐circuit voltage with increasing incident light intensity of approximately 0.1 V per decade of intensity, up to approximately 100 W/cm2 (∼1000 suns). Voltages as high as 0.76 V have been observed at 25 °C with no apparent saturation of voltage at high intensity. Measurements are presented for cells of various base doping levels. An efficiency of 19.1% has been observed at 76 W/cm2 and 25 °C using an unfiltered xenon short‐arc lamp for a nonoptimized cell.
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72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

A revised model for the oxidation of Si by oxygen

Joseph Blanc

Appl. Phys. Lett. 33, 424 (1978); http://dx.doi.org/10.1063/1.90409 (3 pages) | Cited 52 times

Online Publication Date: 8 August 2008

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A conceptually simple modification of the Deal‐Grove model for oxidation of Si by dry oxygen provides an excellent fit to experimental data while removing the regime of ’’anomalously high’’ initial oxidation rates inferred by previous workers. The essential physical proposal is that while diffusion through the amorphous oxide is via molecular oxygen, Si oxidation occurs through the reaction of a small concentration of atomic oxygen.
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81.65.-b Surface treatments

Self‐terminating thermal oxidation of AlAs epilayers grown on GaAs by molecular beam epitaxy

W. T. Tsang

Appl. Phys. Lett. 33, 426 (1978); http://dx.doi.org/10.1063/1.90410 (4 pages) | Cited 30 times

Online Publication Date: 8 August 2008

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Metal‐oxide‐semiconductor (MOS) capacitors were prepared by thermal oxidation (wet and dry) of AlAs epilayers grown on GaAs using molecular beam epitaxy (MBE). This oxidation process was found to be self‐terminated at the AlAs‐GaAs interface. Together with the use of MBE for growing the AlAs‐GaAs multilayer structures, the oxide films obtained were extremely uniform over areas ≳6 cm2, possessed sharp oxide‐semiconductor interfaces, and precise film thicknesses. Capacitance‐voltage measurements on these MOS capacitors displayed inversion behavior and showed little or no hysteresis for oxides prepared by dry oxidation. Measured fixed interface charge density was ∼ (4–6) ×1011 cm−2, while breakdown fields were ∼ (2–4) ×106 V/cm.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.61.Ng Insulators
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