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15 Sep 1978

Volume 33, Issue 6, pp. 479-551

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Electric polarization behavior of MgO : Li+ crystals upon quenching from above 1400 K

D. J. Eisenberg, L. S. Cain, K. H. Lee, and J. H. Crawford

Appl. Phys. Lett. 33, 479 (1978); http://dx.doi.org/10.1063/1.90431 (3 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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Crystals of Li+‐doped MgO which have been quenched from temperatures in excess of 1400 K exhibit an extraordinarily large polarization in an electric field, and the temperature dependence of the relaxation time of this polarization, as measured by both dc (thermal depolarization) and ac (loss tangent versus frequency) methods, indicates a relaxation activation energy of 0.6–0.73 eV, which is consistent with the ionization energy of [Li]° centers. This polarization behavior is to be expected for small semiconductor inclusions (regions of high [Li]° center density embedded in a dielectric) and supports the ’’microgalaxy’’ model of Chen et al. to account for stable [Li]° centers in annealed and quenched MgO : Li+ crystals.
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61.72.-y Defects and impurities in crystals; microstructure
77.22.Gm Dielectric loss and relaxation
78.40.Fy Semiconductors

Direct determination of symmetry of Cr ions in semi‐insulating GaAs substrates through anisotropic ballistic‐phonon propagation and attenuation

V. Narayanamurti, M. A. Chin, and R. A. Logan

Appl. Phys. Lett. 33, 481 (1978); http://dx.doi.org/10.1063/1.90432 (3 pages) | Cited 27 times

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We report ballistic phonon experiments in semi‐insulating GaAs as a function of polarization and propagation direction and of the concentration of chromium in the crystal. The data provide direct evidence for a tetragonally distorted site symmetry of the Cr ions and a ground‐state splitting at ∼14 K.
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78.40.Fy Semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.38.-k Polarons and electron-phonon interactions

Gap‐coupled InSb/LiNbO3 acoustoelectric convolver operating at 77 K

F. J. Leonberger, R. W. Ralston, and S. A. Reible

Appl. Phys. Lett. 33, 484 (1978); http://dx.doi.org/10.1063/1.90433 (3 pages) | Cited 1 time

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A gap‐coupled InSb/LiNbO3 acoustoelectric convolver has been fabricated and tested at 77 K. The results suggest the possibility of using a similar structure with a high‐density InSb diode array as an acoustically scanned infrared imaging device. Measurements indicate that near optimum bias, the convolution efficiency was −63 dBm, the convolution output was uniform along the device length to within 1.5 dB, the insertion loss was 26 dB, the 1‐dB compression point occurred at 18 dBm power input, and the efficiency was constant to ⩽ 3 dB over the range 66–70 MHz.
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72.50.+b Acoustoelectric effects
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
85.60.Gz Photodetectors (including infrared and CCD detectors)

Plasma return current discharge

J. A. Mangano, J. Hsia, J. H. Jacob, and B. N. Srivastava

Appl. Phys. Lett. 33, 487 (1978); http://dx.doi.org/10.1063/1.90434 (3 pages) | Cited 5 times

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A discharge technique based on the use of an electron‐beam‐induced plasma return current to produce and heat large‐volume plasmas is described. The results of discharge studies using this technique in attachment‐dominated mixtures are presented. The results are found to be adequately described by a simple theory. The electron attachment rate by F2 inferred from these measurements agrees well with those of other workers. KrF laser action at 248 nm is reported in return‐current discharge‐excited mixtures of F2/Kr/He.
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52.50.Gj Plasma heating by particle beams
42.60.By Design of specific laser systems

Fresnel lens in a thin‐film waveguide

Paul R. Ashley and William S. C. Chang

Appl. Phys. Lett. 33, 490 (1978); http://dx.doi.org/10.1063/1.90435 (3 pages) | Cited 11 times

Online Publication Date: 8 August 2008

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The theoretical intensity profile of a phase shift and absorption Fresnel lens in a thin‐film waveguide has been calculated. An experimental lens has been constructed with F=5 and a focal length=4 mm using CeO deposited on a BaO waveguide. A 3‐dB spot size (full width half‐maximum) of 3 μm was obtained compared to a diffraction‐limited spot size of 2 μm from theory. Efficiency is approximately 25% and a variation of less than 3 dB in peak intensity is observed over incident angles of up to ±15° from normal.
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42.79.-e Optical elements, devices, and systems
42.82.-m Integrated optics

Saturated absorption in NH3 demonstrated using a tuneable diode laser

D. E. Jennings

Appl. Phys. Lett. 33, 493 (1978); http://dx.doi.org/10.1063/1.90436 (2 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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Saturation of molecular transitions using a tuneable diode laser has been demonstrated for the first time using a standing‐wave‐cavity configuration with the laser beam focused at the sample. Observed saturation effects in NH3 transitions near 888 cm−1 include sub‐Doppler (Lamb‐dip) resonances at the line center.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
33.20.Ea Infrared spectra
42.62.-b Laser applications

vuv‐pumped HgCl laser

J. Gary Eden

Appl. Phys. Lett. 33, 495 (1978); http://dx.doi.org/10.1063/1.90437 (3 pages) | Cited 44 times

Online Publication Date: 8 August 2008

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Photolytic pumping of the HgCl35(B→X) laser has been demonstrated. Oscillation at 557.6 and 558.4 nm was obtained by irradiating HgCl2 vapor and helium with incoherent Xe∗2 emission at 172 nm from an e‐beam‐excited xenon plasma. Also, by photodissociating HgCl2 with ArCl∗ (175 nm) fluorescence, the HgCl(B) state radiative lifetime was determined to be 22.2±1.5 ns.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
31.50.Df Potential energy surfaces for excited electronic states

Collisional quenching kinetics for the HgCl∗ (B1/2) state

A. Mandl and J. H. Parks

Appl. Phys. Lett. 33, 498 (1978); http://dx.doi.org/10.1063/1.90438 (3 pages) | Cited 15 times

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Measurements of the rates of collisional quenching of HgCl∗ (B2 Σ+1/2) by He, Ar, Xe, N2, Cl2, HCl, and CCl4 are reported in this paper. Steady‐state measurements are made of HgCl∗ fluorescence produced by photolyzing HgCl2 using Xe2∗ radiation. A background pressure of [Xe]⩾100 Torr ensures that the HgCl∗ is vibrationally relaxed and all the quenching measurements are from v′=0. He, Ar, and N2 showed no quenching for pressures <1000 Torr. Xe, Cl2, HCl, and CCl4 resulted in two‐body quenching rates of 2.4×10−13, 1.3×10−10, 8.6×10−11, and 1.2×10−10 cm3/sec, respectively. These rates are derived by using an estimated HgCl∗ (B2 Σ+1/2) lifetime of 29 nsec.
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32.50.+d Fluorescence, phosphorescence (including quenching)
34.50.-s Scattering of atoms and molecules

XeF∗ and KrF∗ waveguide lasers excited by a capacitively coupled discharge

L. A. Newman

Appl. Phys. Lett. 33, 501 (1978); http://dx.doi.org/10.1063/1.90414 (3 pages) | Cited 10 times

Online Publication Date: 8 August 2008

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The operation of XeF∗ and KrF∗ waveguide lasers excited by a capacitively coupled self‐sustained discharge is described. Output energies of 35 and 50 μJ, peak powers of 3.5 and 15 kW, and FWHM pulse widths of 10 and 3 nsec have been obtained for XeF∗ and KrF∗, respectively, with an intrinsic efficiency of 1%. Double‐pulse experiments were conducted to evaluate the repetition rate potential of this device.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.79.Gn Optical waveguides and couplers
31.50.Df Potential energy surfaces for excited electronic states

Non‐Gaussian fundamental mode patterns in narrow‐stripe‐geometry lasers

P. M. Asbeck, D. A. Cammack, and J. J. Daniele

Appl. Phys. Lett. 33, 504 (1978); http://dx.doi.org/10.1063/1.90415 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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Near‐ and far‐field patterns of narrow (⩽10 μm) stripe‐geometry lasers are reported which differ significantly from the Gaussian patterns predicted and observed in wider‐stripe lasers. The field patterns are explained by using a waveguide model which takes into account the finite extent of the stripe. High‐output‐power operation in a single fundamental transverse and lateral mode (up to 1 W in 25‐ns pulses) has been observed in devices of this type.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers

Simple two‐step photoionization yields high densities of laser‐active F2+ centers

L. F. Mollenauer, D. M. Bloom, and H. Guggenheim

Appl. Phys. Lett. 33, 506 (1978); http://dx.doi.org/10.1063/1.90416 (4 pages) | Cited 17 times

Online Publication Date: 8 August 2008

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A selective two‐step process is described for the photoionization of F2 centers. An electron trap density no greater than that of the original F2 center population is required for ∼100% ionization, and only modest light intensities are required (I∼10 W/cm2 or less). Certain divalent transition‐metal ions have been found to make excellent traps. The two‐step process has allowed the production of F+2 center densities ∼1018/cm3, as needed for the construction of efficient lasers.
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61.72.jn Color centers
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.55.Rz Doped-insulator lasers and other solid state lasers

Broadly tunable dye‐laser emission to 12 850 Å

K. Kato

Appl. Phys. Lett. 33, 509 (1978); http://dx.doi.org/10.1063/1.90417 (2 pages) | Cited 3 times

Online Publication Date: 8 August 2008

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Tunable dye‐laser emission has been obtained up to 12 850 Å by pumping a dimethyl sulfoxide solution of a carbocyanine dye with an Nd : YAG laser. The solution lased in two distinct wavelength ranges of 11 070–11 870 and 11 920–12 850 Å depending on the dye concentration.
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42.55.Mv Dye lasers
42.60.By Design of specific laser systems

Diffraction‐limited geodesic lens for integrated optics circuits

B. Chen, E. Marom, and R. J. Morrison

Appl. Phys. Lett. 33, 511 (1978); http://dx.doi.org/10.1063/1.90418 (3 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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A diffraction‐limited geodesic lens was demonstrated in a polyurethane film‐glass substrate waveguide structure. The lens has an aspherical depression and a rounded edge. The measured focal length remained at 10 mm up to 92% of the aperture. Diffraction‐limited focal spot size was measured for an input beam width of 2 mm. For larger input beamwidth, the spot size measurement was limited by the optical resolution of the detection system.
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42.79.Gn Optical waveguides and couplers
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors

High‐efficiency prism coupler for optical waveguides

Dror Sarid, Paul J. Cressman, and Robert L. Holman

Appl. Phys. Lett. 33, 514 (1978); http://dx.doi.org/10.1063/1.90419 (2 pages) | Cited 8 times

Online Publication Date: 8 August 2008

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A single prism has been used to simultaneously couple light into and out of an optical waveguide, with a guiding length of 1 cm. The method, which is simple and reproducible, utilizes two optimized gaps for the coupling regions. Coupling efficiencies in excess of 90% have been achieved.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators

An optical waveguide polarizer using dichroic absorption of M centers

K. Sasaki and T. Sasada

Appl. Phys. Lett. 33, 516 (1978); http://dx.doi.org/10.1063/1.90420 (3 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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Dichroic absorption can be produced by orienting M centers in a NaF crystal. An optical waveguide adjustable polarizer is realized by using the NaF crystal as the top layer of a thin‐film glass waveguide. The measured polarization ratios as a function of the guide length are compared with the theoretical calculations.
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78.20.Fm Birefringence
81.05.Kf Glasses (including metallic glasses)
42.79.Gn Optical waveguides and couplers

Second‐harmonic generation in Ti‐diffused LiNbO3 optical waveguides with 25% conversion efficiency

W. Sohler and H. Suche

Appl. Phys. Lett. 33, 518 (1978); http://dx.doi.org/10.1063/1.90421 (3 pages) | Cited 21 times

Online Publication Date: 8 August 2008

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Using a tunable optical parametric oscillator, phase‐matched second‐harmonic generation was realized in high‐quality Ti‐diffused LiNbO3 optical waveguides near the 1.08‐μ fundamental wavelength. At 45 W peak power in 17‐mm‐long waveguides an efficiency for TM0→TE1 conversion up to 25% was achieved. This value is three orders of magnitude larger than previously published results.
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42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Enhanced photoelectrochemical solar‐energy conversion by gallium arsenide surface modification

B. A. Parkinson, A. Heller, and B. Miller

Appl. Phys. Lett. 33, 521 (1978); http://dx.doi.org/10.1063/1.90422 (3 pages) | Cited 62 times

Online Publication Date: 8 August 2008

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In the n‐GaAs/Se=–Se=x–OH−/C liquid junction solar cell, modification of the semiconductor surface by incorporation of ruthenium increases both the fill factor and the open‐circuit voltage and improves the reproducibility of performance. The power conversion efficiency of the modified cell is 12% under ∼100 mW/cm2 sunlight. Surface metal atoms or ions are shown to alter GaAs cell behavior widely; Ru represents a case for which the effect on cell performance is both positive and persisting.
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73.40.Mr Semiconductor-electrolyte contacts
82.47.-a Applied electrochemistry
84.60.Jt Photoelectric conversion

Efficient operation of the electron‐beam‐pumped XeCl laser

L. F. Champagne

Appl. Phys. Lett. 33, 523 (1978); http://dx.doi.org/10.1063/1.90423 (3 pages) | Cited 25 times

Online Publication Date: 8 August 2008

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Efficient operation (5.0%) of the long‐pulse (0.5 μsec) XeCl laser is obtained by electron‐beam pumping of mixtures of neon, xenon, and HCl. Laser emission is observed at 308.0 and 308.2 nm. A small‐signal gain of 2.6% cm−1 is measured from which the saturation intensity is calculated to be ∼0.35 MW cm−2 and the optical absorption at the laser wavelength is calculated to be ∼0.26% cm−1. The electron‐beam‐pumped XeCl laser can be operated under static fill conditions with no measurable degradation in output power.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Time‐resolved spectroscopy of the Ar∗ 2‐excimer emission

M. Diegelmann, W. G. Wrobel, and K. Hohla

Appl. Phys. Lett. 33, 525 (1978); http://dx.doi.org/10.1063/1.90424 (3 pages) | Cited 18 times

Online Publication Date: 8 August 2008

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High‐pressure argon was excited by a 2‐ns 600‐keV e‐beam pulse, and time integrated as well as time resolved fluorescence spectra were measured. No significant dependence of line center (126.2±0.1 nm) or spectral width (80±10 nm) of the Ar2 continuum on gas pressure was found in the range 0.5–20 bar. From the buildup time constant of fluorescence we calculated the three‐body rate constant for Ar2 formation to be 5×10−33 cm6/sec. The fluorescence decay was found to consist of two exponentials with time constants 8.6 and 39.2 ns at 20 bar and 12.6 and 73.9 ns at 10 bar, respectively. We attribute this behavior to the fluorescence originating from the singlet and triplet upper state. From the spectral shift between the two components we determined the singlet‐triplet splitting in the excited Ar2 molecule to be 12 Å corresponding to 760 cm−1.
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78.60.Fi Electroluminescence
79.20.Kz Other electron-impact emission phenomena

Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam deposition

B. T. Meggitt, E. H. C. Parker, and R. M. King

Appl. Phys. Lett. 33, 528 (1978); http://dx.doi.org/10.1063/1.90425 (3 pages) | Cited 19 times

Online Publication Date: 8 August 2008

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Thin heteroepitaxial layers of InAs have been grown on (100) GaAs substrates and buffer layers by molecular beam deposition in a UHV chamber. Smooth epitaxial layers as indicated by in situ MEED patterns have been obtained at substrate temperatures in the range 330–530 °C and SEM micrographs and electron channeling patterns taken ex situ have confirmed these properties. MEED observations also indicated that epitaxial growth can be obtained at considerably lower deposition temperatures. InAs films, 0.5–2.0 μm thick, grown between 330 and 530 °C had bulklike electrical properties with residual n‐type carrier concentrations in the range 5×1016 to 1×1018 cm−3, the lowest values occurring for depositions at 530 °C.
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68.55.-a Thin film structure and morphology
72.80.Ey III-V and II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Ey III-V semiconductors
73.61.Ga II-VI semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Mechanism of performance limitations in heavily doped silicon devices

David Redfield

Appl. Phys. Lett. 33, 531 (1978); http://dx.doi.org/10.1063/1.90426 (3 pages) | Cited 9 times

Online Publication Date: 8 August 2008

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Proposed mechanisms for the observed performance limitations in heavily doped silicon transistors and solar cells are reexamined in detail. The physical‐defect mechanism is ruled out by the uniformly negative results of new measurements of defects by x‐ray topography and deep‐level spectroscopy. Extensive analysis of the band‐gap‐narrowing mechanism discloses a number of flaws that rule it out also. As an alternative to these models, it is proposed that Auger processes in heavily doped regions of the devices are the dominant source of the observed limitations. An order‐of‐magnitude calculation for the solar‐cell case leads to good agreement with the observed maximum open‐circuit voltage.
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71.20.-b Electron density of states and band structure of crystalline solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects

Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) ‐InP

M. Feng, M. M. Tashima, T. H. Windhorn, and G. E. Stillman

Appl. Phys. Lett. 33, 533 (1978); http://dx.doi.org/10.1063/1.90427 (4 pages) | Cited 7 times

Online Publication Date: 8 August 2008

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The dependence of the surface morphology and the interface misfit dislocation density on the amount of lattice mismatch varies considerably with the composition of the quaternary material in the 1.15–1.31‐μm band‐gap range. For the same amount of lattice mismatch the surface morphology becomes poorer for the longer‐wavelength material, and this causes melt removal problems in the LPE growth unless the lattice mismatch is less than 0.09%. For the growth of 1.31‐μm band‐gap material of good crystallographic quality, it is essential that the lattice mismatch be less than 0.03%.
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81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
68.55.-a Thin film structure and morphology
81.10.Fq Growth from melts; zone melting and refining

Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free‐carrier gratings

C. A. Hoffman, K. Jarašiūnas, H. J. Gerritsen, and A. V. Nurmikko

Appl. Phys. Lett. 33, 536 (1978); http://dx.doi.org/10.1063/1.90428 (4 pages) | Cited 78 times

Online Publication Date: 8 August 2008

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Direct measurement of surface recombination velocity has been achieved for n‐InP, p‐InP, and n‐GaAs by a novel technique which is based on picosecond optical resolution of a transient diffraction grating, formed by an excess electron‐hole plasma near the surface of the semiconductor. The influence of diffusion, bulk recombination, and surface recombination on the carrier density are included in the analysis of the experiment, which shows that the method is specifically sensitive to surface recombination velocity. Effects of the plasma density on the diffusion coefficient and the carrier lifetime are discussed.
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73.90.+f Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

cw argon laser annealing of ion‐implanted silicon

D. H. Auston, J. A. Golovchenko, P. R. Smith, C. M. Surko, and T. N. C. Venkatesan

Appl. Phys. Lett. 33, 539 (1978); http://dx.doi.org/10.1063/1.90429 (3 pages) | Cited 56 times

Online Publication Date: 8 August 2008

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We report on the annealing behavior of ion‐implanted silicon exposed to cw argon laser radiation. The quality of the annealing was studied using channeling, in situ reflectivity, phase‐contrast microscopy, and electrical resistivity. Strong dependence of anneal quality on laser power, crystal orientation, and implant dose is reported. Reflectivity measurements with a focused probing laser show that the onset of annealing occurs just below the melting point, and the annealing extends into the region where a thin layer of liquid silicon is formed at the crystal surface. We conclude that the physical mechanism responsible for crystal recovery is similar to the solid‐state epitaxial regrowth observed for over‐annealed samples.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Jh Ion radiation effects
79.20.Ds Laser-beam impact phenomena

Solid‐phase epitaxy of implanted silicon by cw Ar ion laser irradiation

J. S. Williams, W. L. Brown, H. J. Leamy, J. M. Poate, J. W. Rodgers, D. Rousseau, G. A. Rozgonyi, J. A. Shelnutt, and T. T. Sheng

Appl. Phys. Lett. 33, 542 (1978); http://dx.doi.org/10.1063/1.90430 (3 pages) | Cited 57 times

Online Publication Date: 8 August 2008

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Arsenic‐ and antimony‐implanted silicon wafers have been annealed by a cw Ar ion laser. Glancing‐angle Rutherford backscattering and transmission electron and optical microscopy measurements indicate that the mechanism for recrystallization is one of thermal solid‐phase regrowth from the underlying crystalline‐amorphous interface. No implant redistribution is observed.
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81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.80.Jh Ion radiation effects
79.20.Ds Laser-beam impact phenomena
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